JP2019096869A - プラズマフィルタリングのためのシステム及び処理 - Google Patents
プラズマフィルタリングのためのシステム及び処理 Download PDFInfo
- Publication number
- JP2019096869A JP2019096869A JP2018199469A JP2018199469A JP2019096869A JP 2019096869 A JP2019096869 A JP 2019096869A JP 2018199469 A JP2018199469 A JP 2018199469A JP 2018199469 A JP2018199469 A JP 2018199469A JP 2019096869 A JP2019096869 A JP 2019096869A
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- Prior art keywords
- plasma screen
- plasma
- substrate support
- processing chamber
- chamber
- Prior art date
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Images
Classifications
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Abstract
Description
シャワーヘッドと基板支持体との間に規定された処理領域内にバイアスプラズマを生成するように構成された、電源を含んでいてよい。処理システムは、基板支持体に連結されたプラズマスクリーンであって、プラズマスクリーンを通るプラズマ漏出をほぼなくすように構成された、プラズマスクリーンを含んでいてよい。このプラズマスクリーンは、電気接地に連結されていてよい。
が形成され得る。例えば、基板支持体からのバイアスプラズマが形成されてよい。基板支持体は、処理領域内で前駆体のプラズマを形成し得る。プラズマは、イオンを基板表面に向かわせ得る。バイアスプラズマは、容量結合プラズマであってよく、処理領域の至るところで、高いプラズマ電位でプラズマ放出物を生成してよい。基板の上方に形成された誘導結合プラズマは、プラズマ放出物をより制御された形で送達することができるが、一方で、容量結合プラズマは、チャンバ構成要素のボンバードメントを生じ得るプラズマ種を生成する可能性があり、スパッタリングにつながる可能性がある。これらのイオン及び他の粒子は基板表面を超えて広がってよく、基板支持体の表面もまた超えて広がってよい。
Claims (15)
- 半導体処理チャンバであって、
シャワーヘッドと、
基板支持体と、
前記基板支持体と電気的に連結された電源であって、前記シャワーヘッドと前記基板支持体との間に規定される処理領域内にバイアスプラズマを生成するため、前記基板支持体に電力を供給するように構成された電源と、
前記基板支持体に連結されたプラズマスクリーンであって、前記プラズマスクリーンを通るプラズマ漏出をほぼなくすように構成され、電気接地に連結されている、プラズマスクリーンと、
を備える半導体処理チャンバ。 - 前記プラズマスクリーンが、前記基板支持体から径方向外向きに延びる環状の構成要素を備える、請求項1に記載の半導体処理チャンバ。
- 前記プラズマスクリーンが、前記プラズマスクリーンの内側円の周囲にある第1の厚さによって特徴づけられており、前記プラズマスクリーンの外側円の周囲にある、前記第1の厚さよりも小さい第2の厚さによって特徴づけられている、請求項2に記載の半導体処理チャンバ。
- 前記プラズマスクリーンが、前記プラズマスクリーンを貫通する複数の開孔を規定する、請求項3に記載の半導体処理チャンバ。
- 前記複数の開孔が、前記第2の厚さによって特徴づけられている前記プラズマスクリーンの領域内に規定される、請求項4に記載の半導体処理チャンバ。
- 前記複数の開孔のうちの各開孔が、少なくとも部分的に前記プラズマスクリーンを貫通して延びているテーパを含む形状によって特徴づけられている、請求項4に記載の半導体処理チャンバ。
- 前記プラズマスクリーンが、前記プラズマスクリーンを貫通する少なくとも約500の開孔を規定しており、前記複数の開孔の各開孔が、約0.25インチ以下の直径によって特徴づけられている、請求項4に記載の半導体処理チャンバ。
- 前記プラズマスクリーンの円の端部と前記半導体処理チャンバの側壁との間に間隙が維持されている、請求項1に記載の半導体処理チャンバ。
- 前記プラズマスクリーンが、前記電源と電気的に連結された前記基板支持体の静電チャック部から、電気的に絶縁された状態に維持されている、請求項1に記載の半導体処理チャンバ。
- 半導体処理チャンバであって、
チャンバ側壁と、
シャワーヘッドと、
基板支持体であって、前記基板支持体は、前記シャワーヘッドと前記チャンバ側壁と共に前記半導体処理チャンバの処理領域を規定しており、前記基板支持体は導電性のパックを備え、前記基板支持体は、前記処理領域内の第1の垂直位置から、前記処理領域内の前記シャワーヘッドに近接した第2の垂直位置まで、移動可能である基板支持体と、
前記導電性のパックに電気的に連結された電源であって、前記処理領域内にバイアスプラズマを形成するため、前記導電性のパックに対してエネルギーを供給するのに適合している、電源と、
プラズマスクリーンであって、前記基板支持体の周囲に沿って前記基板支持体に連結されており、前記チャンバ側壁に向かって径方向外向きに延びており、電気接地された状態に維持されている、プラズマスクリーンと、
を備える、半導体処理チャンバ。 - 前記プラズマスクリーンが、内側円及び外側円によって特徴づけられており、前記プラズマスクリーンの内側領域と外側領域の間の境界のところに規定されている内部円によって特徴づけられている、請求項10に記載の半導体処理チャンバ。
- 前記プラズマスクリーンが、前記プラズマスクリーンの前記外側領域内にあって前記プラズマスクリーンの周囲に広がっている、複数の開孔を規定している、請求項11に記載の半導体処理チャンバ。
- 前記プラズマスクリーンは、前記プラズマスクリーンの前記内側領域に沿って、前記基板支持体の前記外側端と連結されており、前記基板支持体は、前記基板支持体を取り囲むエッジリングを備えており、前記エッジリングは前記プラズマスクリーンの前記内側領域上に固定されており、前記エッジリングは石英である、請求項11に記載の半導体処理チャンバ。
- 前記プラズマスクリーンは前記内側領域内の第1の厚さによって特徴づけられており、
前記プラズマスクリーンは前記外側領域内の第2の厚さによって特徴づけられており、前記プラズマスクリーンは前記内部円のところにレッジを規定している、請求項11に記載の半導体処理チャンバ。 - 半導体処理チャンバであって、前記シャワーヘッドに近接する位置から、前記基板支持体が前記第2の垂直位置にあるときに前記プラズマスクリーンとほぼ同一平面上にある位置まで、前記チャンバ側壁に沿って延びるライナーをさらに備え、前記プラズマスクリーンの前記シャワーヘッドに面する第1の表面が被覆されている、請求項10に記載の半導体処理チャンバ。
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