JP2019085519A - 半導体型蛍光体 - Google Patents
半導体型蛍光体 Download PDFInfo
- Publication number
- JP2019085519A JP2019085519A JP2017216085A JP2017216085A JP2019085519A JP 2019085519 A JP2019085519 A JP 2019085519A JP 2017216085 A JP2017216085 A JP 2017216085A JP 2017216085 A JP2017216085 A JP 2017216085A JP 2019085519 A JP2019085519 A JP 2019085519A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- type
- active layer
- layer
- type phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 230000004888 barrier function Effects 0.000 claims abstract description 37
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 239000002019 doping agent Substances 0.000 claims abstract description 18
- 238000005424 photoluminescence Methods 0.000 claims abstract description 12
- 230000005284 excitation Effects 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 239000000243 solution Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 96
- 238000000295 emission spectrum Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 15
- 239000000126 substance Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005253 cladding Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000001443 photoexcitation Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
- C09K11/706—Aluminates; Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Abstract
Description
η(外部量子効率)=ηinj(注入効率)×ηint(内部量子効率)×ηext(光取り出し効率)
通常、LEDはInputのエネルギー源が電流であり、p−nジャンクションを形成し注入効率(ηinj)を増大させ、エレクトロルミネッセンス発光させている(図4)。これに対し、本発明では、半導体の多層構造を製作し、ηinjの増大を電流の代わりに光によって行い、フォトルミネッセンス発光させることで(図5)、従来の蛍光体より効率の高い光波長の変換が可能となる。
・Al源ガス:トリメチルアルミニウム(TMAl)、トリエチルアルミニウム(TEAl)等。
・Ga源ガス:トリメチルガリウム(TMGa)、トリエチルガリウム(TEGa)等。
・In源ガス:トリメチルインジウム(TMIn)、トリエチルインジウム(TEIn)等。
・P源ガス:トリメチルリン(TMP)、トリエチルリン(TEP)、ホスフィン(PH3)等。
(p型ドーパント)
・Mg源:ビスシクロペンタジエニルマグネシウム(Cp2Mg)等。
・Zn源:ジメチル亜鉛(DMZn)、ジエチル亜鉛(DEZn)等。
(n型ドーパント)
・Si源:モノシランなどのシリコン水素化物等。
赤色域を狙い、MOVPE装置を用い、図14に示すAlGaInPの多層薄膜を、GaAs基板上に、通常のLED用結晶と同様の手順で成長した。PL発光を担う層をGaInP(井戸層)/AlInP(障壁層)のMQWとし、狙い波長はピーク波長で635[nm]とした。ドーパントはSiとし、キャリア濃度は3.5E17[/cm2]とした。その後、GaAs基板は狙い波長付近を吸収する為、ケミカルエッチングで除去してから、成長した多層薄膜をサファイア基板に接着剤で接着し、半導体型蛍光体とした。得られた半導体型蛍光体は、厚さ50nmの、AlInPからなるノンドープのクラッド層に挟まれた、GaInPからなる厚さ5nmの活性層と、AlInPからなる厚さ5nmの障壁層を40ペア有する多重量子井戸構造を持ち、活性層及び障壁層には3.5×1017atms/cm3のn型のドーパント(Si)を含んでいるものである。
実施例1の半導体型蛍光体とほぼ同じピーク波長を持つ赤色発光体についても、青色LED(λp=450[nm])を照射し、その照射方向で裏面より発光スペクトルの測定を行った。
さらに、活性層の組成を発光が長波長側となるように変えたこと以外は、実施例1と同様の方法で半導体型蛍光体を作製し、発光スペクトルの測定を行った。その結果、図19のように、半値幅は約30[nm]と、実施例1の半導体型蛍光体の場合に比べ、若干大きくはなったがλp=660[nm]にシャープな発光スペクトルが得られた。このように、本発明の特長として、通常のLEDの波長変化と全く同様に変化させることが可能である。
Claims (4)
- 励起光を注入することでフォトルミネッセンス発光する半導体型蛍光体であって、化合物半導体からなり、かつ、n型又はp型ドーパントを含有する活性層を少なくとも1層、化合物半導体からなり、かつ、前記活性層よりバンドギャップが大きい障壁層を少なくとも2層含むものであって、前記活性層と前記障壁層が交互に積層されているものであることを特徴とする半導体型蛍光体。
- 前記化合物半導体が、III−V族化合物半導体であることを特徴とする請求項1に記載の半導体型蛍光体。
- 前記III−V族化合物半導体が、組成式(AlxGa1−x)yIn1−yP(0≦x≦1,0≦y≦1)の化合物半導体であることを特徴とする請求項2に記載の半導体型蛍光体。
- 前記活性層と前記障壁層が交互に積層された多重量子井戸構造を有するものであることを特徴とする請求項1から請求項3のいずれか一項に記載の半導体型蛍光体。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017216085A JP6645488B2 (ja) | 2017-11-09 | 2017-11-09 | 半導体型蛍光体 |
US16/762,963 US11898078B2 (en) | 2017-11-09 | 2018-10-11 | Semiconductor phosphor |
PCT/JP2018/037844 WO2019093056A1 (ja) | 2017-11-09 | 2018-10-11 | 半導体型蛍光体 |
CN201880072592.4A CN111315845A (zh) | 2017-11-09 | 2018-10-11 | 半导体型荧光体 |
TW107137165A TWI816705B (zh) | 2017-11-09 | 2018-10-22 | 半導體型螢光體 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017216085A JP6645488B2 (ja) | 2017-11-09 | 2017-11-09 | 半導体型蛍光体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019085519A true JP2019085519A (ja) | 2019-06-06 |
JP6645488B2 JP6645488B2 (ja) | 2020-02-14 |
Family
ID=66438323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017216085A Active JP6645488B2 (ja) | 2017-11-09 | 2017-11-09 | 半導体型蛍光体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11898078B2 (ja) |
JP (1) | JP6645488B2 (ja) |
CN (1) | CN111315845A (ja) |
TW (1) | TWI816705B (ja) |
WO (1) | WO2019093056A1 (ja) |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05343734A (ja) * | 1992-06-10 | 1993-12-24 | Japan Energy Corp | 半導体装置 |
JPH08250815A (ja) * | 1995-03-14 | 1996-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 窒素不純物をドーピングしたiii−v族化合物半導体およびその作製方法 |
JP2001119068A (ja) * | 1999-10-21 | 2001-04-27 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
JP2001203426A (ja) * | 2000-01-19 | 2001-07-27 | Atr Adaptive Communications Res Lab | 長波長半導体発光素子 |
JP2003249720A (ja) * | 2001-04-18 | 2003-09-05 | Furukawa Electric Co Ltd:The | 面発光型半導体レーザ素子 |
JP2004131567A (ja) * | 2002-10-09 | 2004-04-30 | Hamamatsu Photonics Kk | 発光体と、これを用いた電子線検出器、走査型電子顕微鏡及び質量分析装置 |
JP2004200671A (ja) * | 2002-12-03 | 2004-07-15 | Nec Corp | 量子井戸構造を有する半導体光素子およびその製造方法 |
JP2005150627A (ja) * | 2003-11-19 | 2005-06-09 | Sumitomo Electric Ind Ltd | 発光ダイオード及びその製造方法 |
JP2008216146A (ja) * | 2007-03-06 | 2008-09-18 | Yamaguchi Univ | 蛍光テストチャート |
JP2009081379A (ja) * | 2007-09-27 | 2009-04-16 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
JP2009188372A (ja) * | 2008-01-11 | 2009-08-20 | Panasonic Corp | 二波長半導体レーザ装置及びその製造方法 |
JP2010504627A (ja) * | 2006-09-22 | 2010-02-12 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | Iii族窒化物白色発光ダイオード |
WO2013132812A1 (ja) * | 2012-03-05 | 2013-09-12 | パナソニック株式会社 | 窒化物半導体発光素子、光源及びその製造方法 |
WO2016143579A1 (ja) * | 2015-03-06 | 2016-09-15 | 古河電気工業株式会社 | 半導体光素子 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT410266B (de) * | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
EP1257025A3 (en) | 2001-04-18 | 2005-04-06 | The Furukawa Electric Co., Ltd. | Surface emitting semiconductor laser device |
US7479448B2 (en) | 2002-12-03 | 2009-01-20 | Nec Corporation | Method of manufacturing a light emitting device with a doped active layer |
US7268370B2 (en) * | 2003-06-05 | 2007-09-11 | Matsushita Electric Industrial Co., Ltd. | Phosphor, semiconductor light emitting device, and fabrication method thereof |
TWI274072B (en) * | 2003-08-12 | 2007-02-21 | Lite On Technology Corp | Phosphor material and white light-emitting device using the same |
CN1934717B (zh) | 2004-03-15 | 2011-08-03 | 昭和电工株式会社 | 化合物半导体发光二极管 |
JP2006041077A (ja) | 2004-07-26 | 2006-02-09 | Sumitomo Chemical Co Ltd | 蛍光体 |
KR20070043028A (ko) | 2004-08-06 | 2007-04-24 | 스미토모덴키고교가부시키가이샤 | p형 반도체 영역을 형성하는 방법 및 반도체 소자 |
-
2017
- 2017-11-09 JP JP2017216085A patent/JP6645488B2/ja active Active
-
2018
- 2018-10-11 WO PCT/JP2018/037844 patent/WO2019093056A1/ja active Application Filing
- 2018-10-11 CN CN201880072592.4A patent/CN111315845A/zh active Pending
- 2018-10-11 US US16/762,963 patent/US11898078B2/en active Active
- 2018-10-22 TW TW107137165A patent/TWI816705B/zh active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05343734A (ja) * | 1992-06-10 | 1993-12-24 | Japan Energy Corp | 半導体装置 |
JPH08250815A (ja) * | 1995-03-14 | 1996-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 窒素不純物をドーピングしたiii−v族化合物半導体およびその作製方法 |
JP2001119068A (ja) * | 1999-10-21 | 2001-04-27 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
JP2001203426A (ja) * | 2000-01-19 | 2001-07-27 | Atr Adaptive Communications Res Lab | 長波長半導体発光素子 |
JP2003249720A (ja) * | 2001-04-18 | 2003-09-05 | Furukawa Electric Co Ltd:The | 面発光型半導体レーザ素子 |
JP2004131567A (ja) * | 2002-10-09 | 2004-04-30 | Hamamatsu Photonics Kk | 発光体と、これを用いた電子線検出器、走査型電子顕微鏡及び質量分析装置 |
JP2004200671A (ja) * | 2002-12-03 | 2004-07-15 | Nec Corp | 量子井戸構造を有する半導体光素子およびその製造方法 |
JP2005150627A (ja) * | 2003-11-19 | 2005-06-09 | Sumitomo Electric Ind Ltd | 発光ダイオード及びその製造方法 |
JP2010504627A (ja) * | 2006-09-22 | 2010-02-12 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | Iii族窒化物白色発光ダイオード |
JP2008216146A (ja) * | 2007-03-06 | 2008-09-18 | Yamaguchi Univ | 蛍光テストチャート |
JP2009081379A (ja) * | 2007-09-27 | 2009-04-16 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
JP2009188372A (ja) * | 2008-01-11 | 2009-08-20 | Panasonic Corp | 二波長半導体レーザ装置及びその製造方法 |
WO2013132812A1 (ja) * | 2012-03-05 | 2013-09-12 | パナソニック株式会社 | 窒化物半導体発光素子、光源及びその製造方法 |
WO2016143579A1 (ja) * | 2015-03-06 | 2016-09-15 | 古河電気工業株式会社 | 半導体光素子 |
Non-Patent Citations (4)
Title |
---|
JANG DONG-HOON ET AL.: "Zn Induced Layer Disordering in GaInP/AlInP Visible Multi-Quantum Well Distributed Bragg Reflector L", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 32(Part 2, No.5B), JPN6018051254, 1993, pages 710 - 712, ISSN: 0004120232 * |
JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, JPN7019003045, 2016, pages 04 - 13, ISSN: 0004120233 * |
LI SHUTI ET AL.: "Effect of Si doping on the photoluminescence properties of AlGaInP/GaInP multiple quantum wells", MICROELECTRONICS JOURNAL, vol. 38, JPN6018051251, 2007, pages 767 - 770, XP022183564, ISSN: 0004120230, DOI: 10.1016/j.mejo.2007.04.009 * |
TANAKA TOSHIAKI ET AL.: "Ordered structure in GaInP/AlGaInP quantum wells and p-doped multiquantum well AlGaInP laser diodes", MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, vol. 240, JPN6018051253, 1992, pages 253 - 258, ISSN: 0004120231 * |
Also Published As
Publication number | Publication date |
---|---|
CN111315845A (zh) | 2020-06-19 |
TW201924087A (zh) | 2019-06-16 |
WO2019093056A1 (ja) | 2019-05-16 |
US20200270518A1 (en) | 2020-08-27 |
US11898078B2 (en) | 2024-02-13 |
TWI816705B (zh) | 2023-10-01 |
JP6645488B2 (ja) | 2020-02-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8399876B2 (en) | Semiconductor dies, light-emitting devices, methods of manufacturing and methods of generating multi-wavelength light | |
JP5260502B2 (ja) | Iii族窒化物白色発光ダイオード | |
US8421058B2 (en) | Light emitting diode structure having superlattice with reduced electron kinetic energy therein | |
US20090206320A1 (en) | Group iii nitride white light emitting diode | |
TW201724560A (zh) | 氮化物半導體發光元件 | |
Monemar et al. | Nanowire-based visible light emitters, present status and outlook | |
JP2005268770A (ja) | 白色発光素子及び白色光源 | |
JP2007281257A (ja) | Iii族窒化物半導体発光素子 | |
TW201717429A (zh) | 半導體發光元件 | |
JP2009260203A (ja) | 窒化物半導体発光素子 | |
JP6222684B2 (ja) | 赤色発光半導体素子とその製造方法 | |
KR20070115969A (ko) | 산화 아연계 화합물 반도체 발광 소자 | |
JP2007088269A (ja) | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 | |
US20100270583A1 (en) | Manufacturing method of nitride semi-conductor layer, and a nitride semi-conductor light emitting device with its manufacturing method | |
WO2011101929A1 (ja) | 半導体発光装置及びその製造方法 | |
JP2016143771A (ja) | エピタキシャルウエハ、半導体発光素子、発光装置及びエピタキシャルウエハの製造方法 | |
WO2019093056A1 (ja) | 半導体型蛍光体 | |
US8952399B2 (en) | Light emitting device comprising a wavelength conversion layer having indirect bandgap energy and made of an N-type doped AlInGaP material | |
JP4458870B2 (ja) | 蛍光発光装置、蛍光発光素子、および蛍光体 | |
JP4503316B2 (ja) | 多色光の発光方法 | |
CN211719609U (zh) | 一种光电器件结构 | |
US20230282768A1 (en) | LED Structure and Manufacturing Method thereof, and LED Device | |
RU2392695C1 (ru) | Светодиод белого свечения на основе нитрида элементов iii группы | |
JP2009088562A (ja) | Iii族窒化物半導体発光素子 | |
JP4864940B2 (ja) | 白色光源 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190426 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20190426 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20190531 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190604 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190726 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190924 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191122 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191210 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191223 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6645488 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |