JP2019062175A - Holding device - Google Patents

Holding device Download PDF

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JP2019062175A
JP2019062175A JP2018067870A JP2018067870A JP2019062175A JP 2019062175 A JP2019062175 A JP 2019062175A JP 2018067870 A JP2018067870 A JP 2018067870A JP 2018067870 A JP2018067870 A JP 2018067870A JP 2019062175 A JP2019062175 A JP 2019062175A
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ceramic member
ceramic
opening
base member
flow passage
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JP7023157B2 (en
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考史 山本
Takashi Yamamoto
考史 山本
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Niterra Co Ltd
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NGK Spark Plug Co Ltd
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Abstract

To improve temperature distribution uniformity by suppressing temperature singularity on a first surface of a ceramic member.SOLUTION: A holding device comprises: a ceramic member including a first surface substantially orthogonal to a first direction and a second surface and formed with a first flow channel opened to the first surface therein; a base member including a third surface and formed with a second flow channel opened to the third surface therein; and a junction part for joining the ceramic member and the base member. The junction part is formed with a through hole communicating with the second flow channel of the base member. The ceramic member is formed with a third flow channel opened to the second surface and communicating with the through hole therein. The holding device further includes a porous part arranged inside the ceramic member, communicating with the first and third flow channels, and having a higher porosity than the ceramic member. An opening area of an opening part of the first flow channel in the second surface is smaller than an area of a cross section orthogonal to the first direction in the porus part.SELECTED DRAWING: Figure 4

Description

本明細書に開示される技術は、対象物を保持する保持装置に関する。   The technology disclosed herein relates to a holding device that holds an object.

例えば半導体を製造する際に半導体ウェハを保持する保持装置として、静電チャックが用いられる。静電チャックは、接合部を介して互いに接合されたセラミックス部材とベース部材とを備えており、セラミックス部材の内部に配置されたチャック電極に電圧が印加されることにより発生する静電引力を利用して、セラミックス部材の表面（以下、「吸着面」という）に半導体ウェハを吸着して保持する。   For example, an electrostatic chuck is used as a holding device for holding a semiconductor wafer when manufacturing a semiconductor. The electrostatic chuck includes a ceramic member and a base member bonded to each other through a bonding portion, and utilizes electrostatic attraction generated by applying a voltage to a chuck electrode disposed inside the ceramic member. Then, the semiconductor wafer is adsorbed and held on the surface of the ceramic member (hereinafter, referred to as "suction surface").

静電チャックに保持された半導体ウェハの温度分布が不均一になると、半導体ウェハに対する各処理（成膜、エッチング等）の精度が低下するおそれがあるため、静電チャックには半導体ウェハの温度分布をできるだけ均一にする性能が求められる。そのため、静電チャックの使用時には、例えば、ヒータ電極による加熱や冷媒流路に冷媒を供給することによる冷却等によって、セラミックス部材の吸着面の温度制御が行われる。   If the temperature distribution of the semiconductor wafer held by the electrostatic chuck becomes uneven, the accuracy of each process (film formation, etching, etc.) on the semiconductor wafer may be reduced. Performance is required to make as uniform as possible. Therefore, when using the electrostatic chuck, temperature control of the adsorption surface of the ceramic member is performed by, for example, heating by the heater electrode, cooling by supplying the refrigerant to the refrigerant flow path, or the like.

また、セラミックス部材と半導体ウェハとの間の伝熱性を高めて半導体ウェハの温度分布の均一性をさらに高めるため、セラミックス部材の吸着面と半導体ウェハの表面との間の空間にヘリウム等のガスを供給するための構成を備える保持装置が知られている（例えば、特許文献１参照）。この保持装置では、ベース部材の内部に、ガス源に接続されるガス供給流路が形成され、セラミックス部材の内部に、上記ガス供給流路に連通すると共に吸着面に開口するガス噴出流路が形成されている。ガス源からベース部材のガス供給流路に供給されたガスは、ガス供給流路からセラミックス部材のガス噴出流路に流入し、セラミックス部材の吸着面に開かれた開口（噴出口）から吸着面と半導体ウェハの表面との間の空間に供給される。   Further, in order to enhance the heat conductivity between the ceramic member and the semiconductor wafer to further enhance the uniformity of the temperature distribution of the semiconductor wafer, a gas such as helium is contained in the space between the adsorption surface of the ceramic member and the surface of the semiconductor wafer. There is known a holding device having a configuration for supplying (see, for example, Patent Document 1). In this holding device, a gas supply flow path connected to a gas source is formed in the base member, and a gas injection flow path communicating with the gas supply flow path and opening in the adsorption surface is formed in the ceramic member. It is formed. The gas supplied from the gas source to the gas supply flow passage of the base member flows from the gas supply flow passage into the gas ejection flow passage of the ceramic member, and the adsorption surface from the opening (jet port) opened to the adsorption surface of the ceramic member And the space between and the surface of the semiconductor wafer.

上述したガスを供給するための構成を備える保持装置では、セラミックス部材におけるベース部材に対向する表面に、ガス噴出流路が開口する底面を有する凹部が設けられる。凹部内を経由したセラミックス部材とベース部材との間の放電やガスの放電の発生を抑制するため、凹部内に、セラミックス部材より気孔率が高い多孔質部（「通気性プラグ」とも呼ばれる）が充填される。ベース部材のガス供給流路に供給されたガスは、凹部内に充填された多孔質部の内部を通過して、セラミックス部材のガス噴出流路内に流入することとなる。   In the holding device provided with the configuration for supplying the gas described above, the concave portion having the bottom surface where the gas jet flow channel is opened is provided on the surface of the ceramic member facing the base member. In order to suppress the occurrence of discharge or gas discharge between the ceramic member and the base member via the inside of the recess, a porous portion (also referred to as “air-permeable plug”) having a higher porosity than the ceramic member is provided in the recess. Be filled. The gas supplied to the gas supply flow passage of the base member passes through the inside of the porous portion filled in the recess and flows into the gas ejection flow passage of the ceramic member.

特開２０１５−１９５３４６号公報JP, 2015-195346, A

上述した凹部に充填される多孔質部は比較的気孔率が高いため、充填部材の熱伝導率は、比較的緻密なセラミックス部材、ベース部材や接合部の熱伝導率より低い。また、多孔質部が接合部に接触している構成とすると、例えばセラミックス部材とベース部材との接合段階において硬化する前の接合剤が多孔質部の目詰まりの原因になるおそれがある。そこで、従来の保持装置では、接合部による多孔質部の目詰まりを抑制するため、接合部には、多孔質部の下面に対応したサイズの貫通孔が形成されている。すなわち、多孔質部とベース部材との間には接合部やセラミックス部分が介在しておらず、熱伝導率が比較的に低い空洞であって、かつ、比較的大きなサイズの空洞が形成されている。そのため、多孔質部が設けられた箇所では、セラミックス部材からベース部材への伝熱性（熱引き特性）が局所的に低下し、セラミックス部材の吸着面における温度特異点となり、温度分布の均一性が低下するおそれがある。   Since the porous portion filled in the above-described concave portion has a relatively high porosity, the thermal conductivity of the filling member is lower than the thermal conductivity of the relatively dense ceramic member, the base member, and the bonding portion. Further, when the porous portion is in contact with the bonding portion, for example, the bonding agent before curing in the bonding step between the ceramic member and the base member may cause clogging of the porous portion. So, in the conventional holding | maintenance apparatus, in order to suppress clogging of the porous part by a junction part, the through-hole of the size corresponding to the lower surface of the porous part is formed in the junction part. That is, there is no joint or ceramic portion between the porous portion and the base member, and a cavity having a relatively low thermal conductivity and a relatively large cavity is formed. There is. Therefore, at the portion where the porous portion is provided, the heat conductivity (heat transfer characteristic) from the ceramic member to the base member is locally reduced to become a temperature singular point on the adsorption surface of the ceramic member, and the uniformity of the temperature distribution is It may decrease.

なお、このような課題は、静電引力を利用して半導体ウェハを保持する静電チャックに限らず、また、ヒータ電極や冷媒流路を備える構成に限らず、セラミックス部材とベース部材とを備え、セラミックス部材の表面上に対象物を保持する保持装置一般に共通の課題である。   Such a subject is not limited to an electrostatic chuck that holds a semiconductor wafer using electrostatic attraction, and is not limited to a configuration including a heater electrode and a coolant channel, and includes a ceramic member and a base member. This is a common problem in general holding devices for holding an object on the surface of a ceramic member.

本明細書では、上述した課題を解決することが可能な技術を開示する。   The present specification discloses a technology that can solve the above-described problems.

本明細書に開示される技術は、例えば、以下の形態として実現することが可能である。   The technology disclosed in the present specification can be realized, for example, as the following form.

（１）本明細書に開示される保持装置は、第１の方向に略直交する第１の表面と、前記第１の表面とは反対側の第２の表面と、を有し、前記第１の表面に開口する第１の流路が内部に形成されたセラミックス部材と、第３の表面を有し、前記第３の表面が前記セラミックス部材の前記第２の表面に対向するように配置されたベース部材であって、前記第３の表面に開口する第２の流路が内部に形成された前記ベース部材と、前記セラミックス部材の前記第２の表面と前記ベース部材の前記第３の表面との間に配置され、前記セラミックス部材と前記ベース部材とを接合する接合部と、を備え、前記セラミックス部材の前記第１の表面上に対象物を保持する保持装置において、前記接合部には、前記ベース部材の前記第２の流路に連通する貫通孔が形成されており、前記セラミックス部材の内部には、前記第２の表面に開口するとともに前記貫通孔に連通する第３の流路が形成されており、さらに、前記セラミックス部材の内部に配置され、前記第１の流路と前記第３の流路とに連通し、前記セラミックス部材より気孔率が高い多孔質部を備え、前記第２の表面における前記第３の流路の開口部の開口面積は、前記多孔質部における前記第１の方向に直交する断面の面積より小さい。本保持装置では、セラミックス部材より気孔率が高い多孔質部がセラミックス部材の内部に配置されている。この多孔質部は、セラミックス部材の第１の表面に開口する第１の流路と、第２の表面に開口する第３の流路とに連通している。これにより、第１の表面から第１の流路、多孔質部、および第３の流路を経由してベース部材に至るまでの沿面距離が長くなるため、第１の表面に保持された半導体ウェハとベース部材とが短絡することを抑制することができる。また、第２の表面に開口する第３の流路の開口部の開口面積は、該多孔質部の第１の表面に平行な断面の面積より小さい。これにより、多孔質部とベース部材との間に接合部が介在していない従来の構成に比べて、接合部に対するセラミック部材の接合面積が増えるので、多孔質部の存在に起因してセラミックス部材からベース部材への伝熱性（熱引き特性）が局所的に低下することが抑制され、セラミックス部材の第１の表面における温度特異点となることが抑制され、温度分布の均一性の向上を図ることができる。 (1) A holding device disclosed in the present specification has a first surface substantially orthogonal to a first direction, and a second surface opposite to the first surface, The first flow path opened to the surface of 1 has a third surface and a ceramic member formed therein, and the third surface is disposed so as to face the second surface of the ceramic member A base member having a second flow path opened in the third surface, the second surface of the ceramic member, and the third of the base member. A holding device disposed between the surface and a bonding portion for bonding the ceramic member and the base member, the holding device for holding an object on the first surface of the ceramic member; A through hole communicating with the second flow passage of the base member Is formed, and a third flow passage is formed in the interior of the ceramic member and in communication with the through hole while being open to the second surface, and is further disposed in the interior of the ceramic member. A porous portion communicating with the first flow path and the third flow path and having a porosity higher than that of the ceramic member; and an opening of the opening of the third flow path on the second surface The area is smaller than the area of the cross section orthogonal to the first direction in the porous portion. In the holding device, a porous portion having a porosity higher than that of the ceramic member is disposed inside the ceramic member. The porous portion is in communication with the first flow passage opened in the first surface of the ceramic member and the third flow passage opened in the second surface. As a result, the creeping distance from the first surface to the base member via the first flow path, the porous portion, and the third flow path is increased, so the semiconductor held on the first surface is increased. A short circuit between the wafer and the base member can be suppressed. In addition, the opening area of the opening of the third flow channel opening on the second surface is smaller than the area of the cross section parallel to the first surface of the porous portion. As a result, the bonding area of the ceramic member to the bonding portion is increased as compared to the conventional configuration in which the bonding portion is not interposed between the porous portion and the base member, the ceramic member resulting from the presence of the porous portion It is suppressed that the heat conductivity (heat-induced heat property) from the base member to the base member is locally reduced, the temperature singularity at the first surface of the ceramic member is suppressed, and the uniformity of the temperature distribution is improved. be able to.

（２）上記保持装置において、前記第１の方向視で、前記第１の流路における前記多孔質部側の開口部と前記第３の流路における前記多孔質部側の開口部との少なくとも一方は、前記第１の方向に直交する方向における前記多孔質部の中央寄りに位置している構成としてもよい。本保持装置では、第１の流路における多孔質部側の開口部と第３の流路における多孔質部側の開口部との少なくとも一方は、第１の方向視に直交する方向における多孔質部の中央寄りに位置している。これにより、第１の流路における多孔質部側の開口部等が、多孔質部の周縁寄りに位置している構成に比べて、第１の表面からベース部材までの沿面距離が長くなるため、第１の表面に保持された半導体ウェハとベース部材との短絡を、より効果的に抑制することができる。 (2) In the holding device, at least the opening on the porous portion side in the first flow passage and the opening on the porous portion side in the third flow passage in the first direction view One of them may be located closer to the center of the porous portion in the direction orthogonal to the first direction. In the holding device, at least one of the opening on the porous portion side in the first flow passage and the opening on the porous portion side in the third flow passage is porous in the direction orthogonal to the first direction view. Located near the center of the department. As a result, the creeping distance from the first surface to the base member is longer than in the configuration in which the openings and the like on the porous portion side in the first flow path are positioned closer to the periphery of the porous portion. The short circuit between the semiconductor wafer held on the first surface and the base member can be suppressed more effectively.

（３）上記保持装置において、前記多孔質部における前記第１の表面側の端部は、前記セラミックス部材を前記第１の方向に等分する中心線より前記第１の表面側に位置している構成としてもよい。本保持装置では、多孔質部における第１の表面側の端部は、セラミックス部材を第１の方向に等分する中心線より第１の表面側に位置している。これにより、多孔質部における第１の表面側端部が、セラミックス部材における第１の方向の中心より第２の表面側に位置している構成に比べて、多孔質部による絶縁効果を向上させることができる。 (3) In the holding device, an end on the first surface side in the porous portion is positioned on the first surface side from a center line equally dividing the ceramic member in the first direction. The configuration may be In the holding device, the end on the first surface side in the porous portion is located on the first surface side of the center line that equally divides the ceramic member in the first direction. Thereby, the insulating effect by the porous portion is improved as compared with the configuration in which the first surface side end portion in the porous portion is positioned on the second surface side from the center in the first direction in the ceramic member be able to.

（４）上記保持装置において、前記セラミックス部材の前記第２の表面から前記多孔質部までの第２の最短距離は、前記第１の表面から前記多孔質部までの第１の最短距離より長い構成としてもよい。本保持装置では、第２の表面から多孔質部までの第２の最短距離は、第１の表面から多孔質部までの第１の最短距離より長い。これにより、絶縁効果を向上させるために多孔質部を第１の表面に近づけつつ、多孔質部が大型になることを抑制できる。 (4) In the holding device, a second shortest distance from the second surface of the ceramic member to the porous portion is longer than a first shortest distance from the first surface to the porous portion It is good also as composition. In the holding device, the second shortest distance from the second surface to the porous portion is longer than the first shortest distance from the first surface to the porous portion. Thereby, in order to improve the insulation effect, it is possible to prevent the porous portion from becoming large while bringing the porous portion close to the first surface.

（５）上記保持装置において、前記セラミックス部材は、前記第１の表面を有し、前記第１の流路が内部に形成された第１のセラミックス部材と、前記第２の表面の少なくとも一部を有し、前記第３の流路が形成された第２のセラミックス部材と、を含み、前記多孔質部は、前記第１のセラミックス部材と前記第２のセラミックス部材との間に形成されるとともに前記第１の流路と前記第３の流路とに連通する空間内に配置されている構成としてもよい。このような構成においても、セラミックス部材の第１の表面における温度特異点となることが抑制され、温度分布の均一性の向上を図ることができる。 (5) In the holding device, the ceramic member has the first surface, and a first ceramic member in which the first flow passage is formed, and at least a part of the second surface. And the second ceramic member in which the third flow path is formed, and the porous portion is formed between the first ceramic member and the second ceramic member. In addition, it may be arranged in a space communicating with the first flow path and the third flow path. Even in such a configuration, temperature singularities on the first surface of the ceramic member are suppressed, and the uniformity of the temperature distribution can be improved.

なお、本明細書に開示される技術は、種々の形態で実現することが可能であり、例えば、保持装置、静電チャック、真空チャック、ヒータ装置、それらの製造方法等の形態で実現することが可能である。   Note that the technology disclosed in the present specification can be realized in various forms, for example, in the form of a holding device, an electrostatic chuck, a vacuum chuck, a heater device, a method of manufacturing them, and the like. Is possible.

実施形態における静電チャック１０の外観構成を概略的に示す斜視図である。It is a perspective view which shows roughly the appearance composition of electrostatic zipper 10 in an embodiment. 実施形態における静電チャック１０のＸＺ断面構成を概略的に示す説明図である。It is an explanatory view showing roughly the XZ section composition of electrostatic zipper 10 in an embodiment. 実施形態における静電チャック１０のＸＹ断面構成を概略的に示す説明図である。It is an explanatory view showing roughly the XY section composition of electrostatic zipper 10 in an embodiment. 実施形態における静電チャック１０のＸ１部を拡大して示す説明図である。It is explanatory drawing which expands and shows X1 part of the electrostatic chuck 10 in embodiment. 比較例の静電チャック１０Ｘの構成を概略的に示す説明図である。It is explanatory drawing which shows roughly the structure of electrostatic chuck 10X of a comparative example. 実施形態の変形例における静電チャック１０Ｂの充填部材１６０周辺部（Ｘ１Ｂ部）を拡大して示す説明図である。It is an explanatory view expanding and showing a filling member 160 peripheral part (X1 B section) in electrostatic chuck 10B in a modification of an embodiment.

Ａ．実施形態：
Ａ−１．静電チャック１０の構成：
図１は、本実施形態における静電チャック１０の外観構成を概略的に示す斜視図であり、図２は、本実施形態における静電チャック１０のＸＺ断面構成を概略的に示す説明図であり、図３は、本実施形態における静電チャック１０のＸＹ断面構成を概略的に示す説明図である。図２には、図３のＩＩ−ＩＩの位置における静電チャック１０のＸＺ断面構成が示されており、図３には、図２のＩＩＩ−ＩＩＩの位置における静電チャック１０のＸＹ断面構成が示されている。各図には、方向を特定するための互いに直交するＸＹＺ軸が示されている。本明細書では、便宜的に、Ｚ軸正方向を上方向といい、Ｚ軸負方向を下方向というものとするが、静電チャック１０は実際にはそのような向きとは異なる向きで設置されてもよい。 A. Embodiment:
A-1. Configuration of electrostatic chuck 10:
FIG. 1 is a perspective view schematically showing an appearance configuration of the electrostatic chuck 10 in the present embodiment, and FIG. 2 is an explanatory view schematically showing an XZ cross-sectional configuration of the electrostatic chuck 10 in the present embodiment. FIG. 3 is an explanatory view schematically showing an XY cross-sectional configuration of the electrostatic chuck 10 in the present embodiment. 2 shows the XZ cross-sectional configuration of the electrostatic chuck 10 at the position II-II in FIG. 3, and FIG. 3 shows the XY cross-sectional configuration of the electrostatic chuck 10 at the position III-III in FIG. It is shown. In each figure, mutually orthogonal XYZ axes for specifying the direction are shown. In this specification, for convenience, the Z-axis positive direction is referred to as the upper direction, and the Z-axis negative direction is referred to as the downward direction. However, the electrostatic chuck 10 is actually installed in an orientation different from such an orientation. It may be done.

静電チャック１０は、対象物（例えば半導体ウェハＷ）を静電引力により吸着して保持する装置であり、例えば半導体製造装置の真空チャンバー内で半導体ウェハＷを固定するために使用される。静電チャック１０は、所定の配列方向（本実施形態では上下方向（Ｚ軸方向））に並べて配置されたセラミックス部材１００およびベース部材２００を備える。セラミックス部材１００とベース部材２００とは、セラミックス部材１００の下面Ｓ２とベース部材２００の上面Ｓ３とが上記配列方向に対向するように配置される。セラミックス部材１００の下面Ｓ２は、特許請求の範囲における第２の表面に相当し、ベース部材２００の上面Ｓ３は、特許請求の範囲における第３の表面に相当する。   The electrostatic chuck 10 is a device for attracting and holding an object (for example, a semiconductor wafer W) by electrostatic attraction, and is used, for example, to fix the semiconductor wafer W in a vacuum chamber of a semiconductor manufacturing apparatus. The electrostatic chuck 10 includes a ceramic member 100 and a base member 200 arranged in a predetermined arrangement direction (in the present embodiment, in the vertical direction (Z-axis direction)). The ceramic member 100 and the base member 200 are arranged such that the lower surface S2 of the ceramic member 100 and the upper surface S3 of the base member 200 face each other in the arrangement direction. The lower surface S2 of the ceramic member 100 corresponds to the second surface in the claims, and the upper surface S3 of the base member 200 corresponds to the third surface in the claims.

セラミックス部材１００は、例えば円形平面の板状部材であり、セラミックス（例えば、アルミナや窒化アルミニウム等）により形成されている。セラミックス部材１００の直径は例えば５０ｍｍ〜５００ｍｍ程度（通常は２００ｍｍ〜４５０ｍｍ程度）であり、セラミックス部材１００の厚さは例えば１ｍｍ〜１０ｍｍ程度である。   The ceramic member 100 is, for example, a plate member having a circular flat surface, and is formed of ceramic (for example, alumina, aluminum nitride, or the like). The diameter of the ceramic member 100 is, for example, about 50 mm to 500 mm (usually, about 200 mm to 450 mm), and the thickness of the ceramic member 100 is, for example, about 1 mm to 10 mm.

セラミックス部材１００の内部には、導電性材料（例えば、タングステンやモリブデン等）により形成された一対のチャック電極４００が設けられている（図２参照）。一対のチャック電極４００に電源（図示せず）から電圧が印加されると、静電引力が発生し、この静電引力によって半導体ウェハＷがセラミックス部材１００における下面Ｓ２とは反対側の表面（以下、「吸着面Ｓ１」という）に吸着固定される。セラミックス部材１００の吸着面Ｓ１は、上述した配列方向（Ｚ軸方向）に略直交する略平面状の表面である。ただし、本実施形態では、セラミックス部材１００の吸着面Ｓ１に複数の微小な突起が形成されており、半導体ウェハＷが吸着面Ｓ１に吸着固定された状態では、吸着面Ｓ１と半導体ウェハＷの表面との間にわずかな空間が存在する。セラミックス部材１００の吸着面Ｓ１は、特許請求の範囲における第１の表面に相当し、Ｚ軸方向は、特許請求の範囲における第１の方向に相当する。また、本明細書では、Ｚ軸に直交する方向（すなわち、吸着面Ｓ１に平行な方向）を「面方向」という。   Inside the ceramic member 100, a pair of chuck electrodes 400 formed of a conductive material (for example, tungsten, molybdenum or the like) is provided (see FIG. 2). When a voltage is applied from a power source (not shown) to the pair of chuck electrodes 400, an electrostatic attractive force is generated, and this electrostatic attractive force causes the surface of the semiconductor wafer W opposite to the lower surface S2 of the ceramic member 100 (hereinafter , And fixed by suction to the suction surface S1). The suction surface S1 of the ceramic member 100 is a substantially planar surface substantially orthogonal to the above-described arrangement direction (Z-axis direction). However, in the present embodiment, a plurality of minute projections are formed on the adsorption surface S1 of the ceramic member 100, and the adsorption surface S1 and the surface of the semiconductor wafer W are in a state where the semiconductor wafer W is adsorbed and fixed to the adsorption surface S1. There is a slight space between them. The suction surface S1 of the ceramic member 100 corresponds to the first surface in the claims, and the Z-axis direction corresponds to the first direction in the claims. Further, in the present specification, a direction orthogonal to the Z axis (that is, a direction parallel to the suction surface S1) is referred to as a “plane direction”.

ベース部材２００は、例えばセラミックス部材１００と同径の、または、セラミックス部材１００より径が大きい円形平面の板状部材であり、例えば金属（アルミニウムやアルミニウム合金等）により形成されている。ベース部材２００の直径は例えば２２０ｍｍ〜５５０ｍｍ程度（通常は２２０ｍｍ〜４７０ｍｍ）であり、ベース部材２００の厚さは例えば２０ｍｍ〜４０ｍｍ程度である。   The base member 200 is, for example, a circular flat plate member having the same diameter as the ceramic member 100 or a diameter larger than that of the ceramic member 100, and is made of, for example, a metal (aluminum, aluminum alloy or the like). The diameter of the base member 200 is, for example, about 220 mm to 550 mm (usually, 220 mm to 470 mm), and the thickness of the base member 200 is, for example, about 20 mm to 40 mm.

ベース部材２００の内部には冷媒流路２１０が形成されている（図２参照）。冷媒流路２１０に冷媒（例えば、フッ素系不活性液体や水等）が流されると、ベース部材２００が冷却され、接着層３００を介したベース部材２００とセラミックス部材１００との間の伝熱によりセラミックス部材１００が冷却され、セラミックス部材１００の吸着面Ｓ１に保持された半導体ウェハＷが冷却される。これにより、半導体ウェハＷの温度制御が実現される。   A refrigerant channel 210 is formed inside the base member 200 (see FIG. 2). When a refrigerant (for example, a fluorine-based inert liquid, water or the like) is allowed to flow through the refrigerant channel 210, the base member 200 is cooled, and the heat transfer between the base member 200 and the ceramic member 100 via the adhesive layer 300. The ceramic member 100 is cooled, and the semiconductor wafer W held on the suction surface S1 of the ceramic member 100 is cooled. Thereby, temperature control of the semiconductor wafer W is realized.

セラミックス部材１００とベース部材２００とは、セラミックス部材１００の下面Ｓ２とベース部材２００の上面Ｓ３との間に配置された接着層３００によって互いに接合されている。接着層３００は、例えばシリコーン系樹脂やアクリル系樹脂、エポキシ系樹脂等の接着剤により構成されている。接着層３００の厚さは、例えば０．１ｍｍ〜１ｍｍ程度である。接着層３００は、特許請求の範囲における接合部に相当する。   The ceramic member 100 and the base member 200 are bonded to each other by an adhesive layer 300 disposed between the lower surface S2 of the ceramic member 100 and the upper surface S3 of the base member 200. The adhesive layer 300 is made of, for example, an adhesive such as silicone resin, acrylic resin, or epoxy resin. The thickness of the adhesive layer 300 is, for example, about 0.1 mm to 1 mm. The adhesive layer 300 corresponds to a joint in the claims.

Ａ−２．ガスを供給するための構成：
また、静電チャック１０は、セラミックス部材１００と半導体ウェハＷとの間の伝熱性を高めて半導体ウェハＷの温度分布の均一性をさらに高めるため、セラミックス部材１００の吸着面Ｓ１と半導体ウェハＷの表面との間に存在する空間にガスを供給するための構成を備えている。なお、本実施形態では、このようなガスとして、ヘリウムガス（Ｈｅガス）が用いられる。以下、ヘリウムガスを供給するための構成について、図１〜図３、および、図２のＸ１部を拡大して示す図４を参照して説明する。 A-2. Configuration for supplying gas:
Further, the electrostatic chuck 10 enhances the heat transfer between the ceramic member 100 and the semiconductor wafer W to further improve the uniformity of the temperature distribution of the semiconductor wafer W. It comprises an arrangement for supplying gas to the space existing between it and the surface. In the present embodiment, helium gas (He gas) is used as such a gas. Hereinafter, the configuration for supplying helium gas will be described with reference to FIGS. 1 to 3 and FIG. 4 which is an enlarged view of a portion X1 of FIG.

Ａ−２−１．ベース部材２００におけるガスを供給するための構成：
図２および図４に示すように、ベース部材２００の下面Ｓ４には、図示しないヘリウムガス源と接続されるガス源接続孔２２１が形成されており、ベース部材２００の上面Ｓ３には、ガス供給孔２２２が開口している。ベース部材２００の内部には、ガス源接続孔２２１とガス供給孔２２２とを連通するガス供給流路２２０が形成されている。ガス源接続孔２２１とガス供給孔２２２とガス供給流路２２０とは、特許請求の範囲における第２の流路に相当する。 A-2-1. Configuration for supplying gas in the base member 200:
As shown in FIGS. 2 and 4, a gas source connection hole 221 connected to a helium gas source (not shown) is formed on the lower surface S4 of the base member 200, and a gas supply is performed on the upper surface S3 of the base member 200. The holes 222 are open. A gas supply flow passage 220 communicating the gas source connection hole 221 with the gas supply hole 222 is formed inside the base member 200. The gas source connection hole 221, the gas supply hole 222, and the gas supply flow passage 220 correspond to a second flow passage in the claims.

Ａ−２−２．接着層３００におけるガスを供給するための構成：
また、図２および図４に示すように、接着層３００には、ベース部材２００に形成されたガス供給孔２２２に連通すると共に、接着層３００を厚さ方向（上下方向）に貫通する貫通孔３１０が形成されている。 A-2-2. Configuration for Supplying Gas in Adhesive Layer 300:
Further, as shown in FIGS. 2 and 4, the adhesive layer 300 communicates with the gas supply holes 222 formed in the base member 200 and is a through hole penetrating the adhesive layer 300 in the thickness direction (vertical direction). 310 are formed.

Ａ−２−３．セラミックス部材１００におけるガスを供給するための構成：
また、図１および図２に示すように、セラミックス部材１００の吸着面Ｓ１には、８つのガス噴出孔１０２が開口している。また、セラミックス部材１００の内部には、セラミックス部材１００に形成された後述する収容室１４０の上面１４４（図４)と、セラミックス部材１００の吸着面Ｓ１に開口するガス噴出孔１０２とを接続するガス噴出流路１１０が形成されている。ガス噴出流路１１０は、収容室１４０の上面１４４から上方に延びる第１の縦流路１１１（図２〜図４）と、第１の縦流路１１１と連通すると共に面方向に環状に延びる横流路１１４（図２および図３）と、横流路１１４から上方に延びてガス噴出孔１０２に連通する第２の縦流路１１２（図２）とから構成されている。ガス噴出流路１１０は、特許請求の範囲における第１の流路に相当する。 A-2-3. Configuration for supplying gas in the ceramic member 100:
Further, as shown in FIG. 1 and FIG. 2, eight gas injection holes 102 are opened in the suction surface S1 of the ceramic member 100. Further, inside the ceramic member 100, a gas connecting an upper surface 144 (FIG. 4) of the storage chamber 140 described later formed in the ceramic member 100 and the gas injection hole 102 opened to the suction surface S1 of the ceramic member 100. The jet flow channel 110 is formed. The gas ejection flow passage 110 communicates with the first vertical flow passage 111 (FIGS. 2 to 4) extending upward from the upper surface 144 of the storage chamber 140 and the first vertical flow passage 111 and extends annularly in the surface direction. A horizontal flow passage 114 (FIGS. 2 and 3) and a second vertical flow passage 112 (FIG. 2) extending upward from the horizontal flow passage 114 and communicating with the gas injection holes 102 are formed. The gas ejection flow channel 110 corresponds to the first flow channel in the claims.

なお、本実施形態の静電チャック１０では、ヘリウムガスの供給経路が２系統存在する。すなわち、図３に示すように、セラミックス部材１００の内部には２つの横流路１１４が形成されている。図２および図３に示すように、２つの横流路１１４の内のセラミックス部材１００の中心に近い方の横流路１１４は、第１の縦流路１１１を介して、図２および図４に示す収容室１４０と連通しており、かつ、第２の縦流路１１２を介して、吸着面Ｓ１に開口する８つのガス噴出孔１０２の内のセラミックス部材１００の中心に近い４つのガス噴出孔１０２と連通している。また、２つの横流路１１４の内のセラミックス部材１００の中心から遠い方の横流路１１４は、第１の縦流路１１１を介して、図示しない収容室１４０と連通しており、かつ、第２の縦流路１１２を介して、吸着面Ｓ１に開口する８つのガス噴出孔１０２の内のセラミックス部材１００の中心から遠い４つのガス噴出孔１０２と連通している。なお、後述の充填部材１６０は、ヘリウムガスの供給経路の２系統のそれぞれに配置されるとしてもよいし、２系統のうちの一方だけに配置されるとしてもよい。   In the electrostatic chuck 10 of the present embodiment, there are two helium gas supply paths. That is, as shown in FIG. 3, two lateral flow channels 114 are formed inside the ceramic member 100. As shown in FIGS. 2 and 3, the horizontal flow passage 114 closer to the center of the ceramic member 100 in the two horizontal flow passages 114 is shown in FIGS. 2 and 4 via the first vertical flow passage 111. Four gas injection holes 102 close to the center of the ceramic member 100 among the eight gas injection holes 102 opened in the adsorption surface S1 through the second vertical flow passage 112 and in communication with the storage chamber 140. It is in communication with Further, the horizontal flow passage 114 which is farther from the center of the ceramic member 100 in the two horizontal flow passages 114 is in communication with the storage chamber 140 (not shown) via the first vertical flow passage 111, and The four gas ejection holes 102 which are far from the center of the ceramic member 100 among the eight gas ejection holes 102 opened in the adsorption surface S1 communicate with the four gas ejection holes 102 through the vertical flow path 112 of FIG. The filling member 160 described later may be disposed in each of the two systems of the supply path of the helium gas, or may be disposed in only one of the two systems.

また、図２および図４に示すように、セラミックス部材１００の内部には、収容室１４０が形成されている。収容室１４０は、吸着面Ｓ１に近い側の内表面である上面１４４と、セラミックス部材１００の下面Ｓ２に近い側の内表面である下面１４５と、上面１４４の周縁と下面１４５の周縁とをつなぐ内表面である側面１４２と、を有する。収容室１４０の上面１４４には、ガス噴出流路１１０（ガス噴出流路１１０を構成する第１の縦流路１１１）が開口している。本実施形態では、収容室１４０（収容室１４０の内部空間）の形状は、略円柱状である。このため、収容室１４０における上面１４４の面積と、収容室１４０における下面１４５の面積と、収容室１４０における上下方向（Ｚ軸方向）に直交する任意の断面の面積とは略同一である。また、図２に示すように、収容室１４０の上面１４４は、セラミックス部材１００を上下方向（Ｚ軸方向）に二等分する中心線Ｌより吸着面Ｓ１側に位置している。また、セラミックス部材１００の下面Ｓ２から収容室１４０までの第１の最短距離Ｄ１は、セラミックス部材１００の吸着面Ｓ１から収容室１４０までの第２の最短距離Ｄ２より長い。本実施形態では、収容室１４０の下面１４５も、中心線Ｌより吸着面Ｓ１側に位置している。   Further, as shown in FIGS. 2 and 4, a storage chamber 140 is formed inside the ceramic member 100. The storage chamber 140 connects the upper surface 144 which is the inner surface closer to the suction surface S1, the lower surface 145 which is the inner surface closer to the lower surface S2 of the ceramic member 100, and the periphery of the upper surface 144 and the periphery of the lower surface 145. And a side surface 142 which is an inner surface. On the upper surface 144 of the storage chamber 140, a gas jet flow channel 110 (a first vertical flow channel 111 constituting the gas jet flow channel 110) is opened. In the present embodiment, the shape of the storage chamber 140 (the internal space of the storage chamber 140) is substantially cylindrical. For this reason, the area of the upper surface 144 in the storage chamber 140, the area of the lower surface 145 in the storage chamber 140, and the area of any cross section orthogonal to the vertical direction (Z-axis direction) in the storage chamber 140 are substantially the same. Further, as shown in FIG. 2, the upper surface 144 of the storage chamber 140 is located closer to the suction surface S1 than the center line L that bisects the ceramic member 100 in the vertical direction (Z-axis direction). Further, the first shortest distance D1 from the lower surface S2 of the ceramic member 100 to the accommodation chamber 140 is longer than the second shortest distance D2 from the suction surface S1 of the ceramic member 100 to the accommodation chamber 140. In the present embodiment, the lower surface 145 of the storage chamber 140 is also located closer to the suction surface S1 than the center line L.

図２および図４に示すように、セラミックス部材１００に形成された収容室１４０には、絶縁材料により形成され、かつ、通気性を有する充填部材（「通気性プラグ」とも呼ばれる）１６０が充填されている。充填部材１６０は、セラミックス部材１００よりも気孔率が高いため、充填部材１６０の熱伝導率は、比較的緻密なセラミックス部材１００の熱伝導率より低い。充填部材１６０の形成材料としては、例えば、セラミックス多孔質体やグラスファイバー、耐熱性ポリテトラフルオロエチレン樹脂スポンジ等を用いることができる。充填部材１６０は、特許請求の範囲における多孔質部に相当する。   As shown in FIGS. 2 and 4, the containing chamber 140 formed in the ceramic member 100 is filled with a filling member (also referred to as “breathable plug”) 160 which is made of an insulating material and has air permeability. ing. Since the filling member 160 has a higher porosity than the ceramic member 100, the thermal conductivity of the filling member 160 is lower than the thermal conductivity of the relatively dense ceramic member 100. As a forming material of the filling member 160, for example, a ceramic porous body, a glass fiber, a heat resistant polytetrafluoroethylene resin sponge or the like can be used. The filling member 160 corresponds to the porous portion in the claims.

充填部材１６０は、収容室１４０の上面１４４に対向する上面対向面１６４と、収容室１４０の下面１４５に対向する下面対向面１６５と、上面対向面１６４の周縁と下面対向面１６５の周縁とをつなぐ側面１６２とを有する。本実施形態では、充填部材１６０の形状は、収容室１４０の形状と同様、略円柱状である。このため、充填部材１６０の上面対向面１６４の面積と、充填部材１６０の下面対向面１６５の面積と、充填部材１６０の上下方向（Ｚ軸方向）に直交する任意の断面の面積（以下、単に「充填部材１６０の断面積」という）とは略同一である。また、充填部材１６０は、収容室１４０内にほぼ隙間無く埋設されている。すなわち、充填部材１６０の外周面（上面対向面１６４、下面対向面１６５、側面１６２）は、収容室１４０の内表面（上面１４４、下面１４５、側面１４２）のそれぞれに接している。   The filling member 160 includes an upper surface facing surface 164 facing the upper surface 144 of the housing chamber 140, a lower surface facing surface 165 facing the lower surface 145 of the housing chamber 140, and a periphery of the upper surface facing surface 164 and a periphery of the lower surface facing surface 165. And a connecting side 162. In the present embodiment, the shape of the filling member 160 is substantially cylindrical like the shape of the storage chamber 140. Therefore, the area of an arbitrary cross section orthogonal to the area of the upper surface facing surface 164 of the filling member 160, the area of the lower surface facing surface 165 of the filling member 160, and the vertical direction (Z axis direction) of the filling member 160 (hereinafter simply referred to as simply "The cross-sectional area of the filling member 160" is substantially the same. In addition, the filling member 160 is embedded in the storage chamber 140 substantially without a gap. That is, the outer peripheral surface (upper surface opposing surface 164, lower surface opposing surface 165, side surface 162) of the filling member 160 is in contact with the inner surface (upper surface 144, lower surface 145, side surface 142) of the storage chamber 140.

また、ガス噴出流路１１０の第１の開口部１１３の収容室１４０の上面１４４における開口面積は、充填部材１６０の断面積より小さく、かつ、上下方向（Ｚ軸方向）視で第１の開口部１１３の全体は充填部材１６０（上面対向面１６４）に重なる。また、上下方向視で、第１の開口部１１３は、充填部材１６０（上面対向面１６４）の面方向における中央寄りに位置している。第１の開口部１１３は、特許請求の範囲における第１の流路における多孔質部側の開口部に相当する。   Further, the opening area of the top surface 144 of the storage chamber 140 of the first opening 113 of the gas ejection flow channel 110 is smaller than the cross-sectional area of the filling member 160, and the first opening in the vertical direction (Z-axis direction) The entire portion 113 overlaps the filling member 160 (upper surface opposing surface 164). Further, as viewed in the vertical direction, the first opening 113 is positioned closer to the center in the surface direction of the filling member 160 (upper surface opposing surface 164). The first opening 113 corresponds to the opening on the porous portion side in the first flow path in the claims.

また、図２に示すように、充填部材１６０の上面対向面１６４は、上記中心線Ｌより吸着面Ｓ１側に位置している。また、セラミックス部材１００の下面Ｓ２から充填部材１６０までの第１の最短距離Ｄ１は、セラミックス部材１００の吸着面Ｓ１から充填部材１６０までの第２の最短距離Ｄ２より長い。本実施形態では、充填部材１６０の下面対向面１６５も、中心線Ｌより吸着面Ｓ１側に位置している。   Further, as shown in FIG. 2, the upper surface facing surface 164 of the filling member 160 is located closer to the suction surface S1 than the center line L. Further, the first shortest distance D1 from the lower surface S2 of the ceramic member 100 to the filling member 160 is longer than the second shortest distance D2 from the suction surface S1 of the ceramic member 100 to the filling member 160. In the present embodiment, the lower opposing surface 165 of the filling member 160 is also located closer to the suction surface S1 than the center line L.

さらに、セラミックス部材１００の内部には、ガス中継流路１１６が形成されている。ガス中継流路１１６は、上下方向に沿って直線状に延びており、収容室１４０の下面１４５に開口するとともに、セラミックス部材１００の下面Ｓ２に開口している。ガス中継流路１１６は収容室１４０の下面１４５に開口している第２の開口部１１７を有する。第２の開口部１１７の収容室１４０の下面１４５における開口面積は、充填部材１６０の下面対向面１６５の面積より小さく、かつ、上下方向（Ｚ軸方向）視で第２の開口部１１７の全体は下面対向面１６５に重なっている。また、上下方向視で、第２の開口部１１７は、充填部材１６０（下面対向面１６５）の面方向における中央寄りに位置している。   Furthermore, inside the ceramic member 100, a gas relay flow passage 116 is formed. The gas relay flow passage 116 linearly extends in the vertical direction, and is open at the lower surface 145 of the storage chamber 140 and at the lower surface S 2 of the ceramic member 100. The gas relay channel 116 has a second opening 117 opened to the lower surface 145 of the storage chamber 140. The opening area of the lower surface 145 of the storage chamber 140 of the second opening 117 is smaller than the area of the lower opposing surface 165 of the filling member 160, and the entire second opening 117 in the vertical direction (Z-axis direction) Is overlapped with the lower facing surface 165. Further, in the vertical direction, the second opening 117 is positioned closer to the center in the surface direction of the filling member 160 (lower surface opposing surface 165).

また、ガス中継流路１１６は、セラミックス部材１００の下面Ｓ２に開口している第３の開口部１１８を有する。第３の開口部１１８のセラミックス部材１００の下面Ｓ２における開口面積は、充填部材１６０の断面積より小さい。換言すれば、セラミックス部材１００の上下方向（Ｚ軸方向）に平行な断面（図４のＸＺ断面）において、第３の開口部１１８の上下方向に直交する方向（Ｘ軸方向）の幅（以下、単に「幅」という）は、充填部材１６０の幅より狭い。また、上下方向（Ｚ軸方向）視で、第３の開口部１１８の全体は、充填部材１６０（充填部材１６０の下面対向面１６５）に重なっている。   In addition, the gas relay flow passage 116 has a third opening 118 opened in the lower surface S2 of the ceramic member 100. The opening area of the third opening 118 at the lower surface S2 of the ceramic member 100 is smaller than the cross-sectional area of the filling member 160. In other words, in the cross section (XZ cross section in FIG. 4) parallel to the vertical direction (Z axis direction) of the ceramic member 100, the width (X axis direction) of the third opening 118 in the direction perpendicular to the vertical direction , Simply “width” is narrower than the width of the filling member 160. In addition, in the vertical direction (Z-axis direction), the entire third opening 118 overlaps the filling member 160 (the lower surface opposing surface 165 of the filling member 160).

また、第３の開口部１１８は、接着層３００に形成された貫通孔３１０に連通している。本実施形態では、第３の開口部１１８の開口面積と、接着層３００に形成された貫通孔３１０の上下方向に直交する断面における開口面積とは略同一である。ガス中継流路１１６は、特許請求の範囲における第３の流路に相当し、第２の開口部１１７は、特許請求の範囲における、第３の流路における多孔質部側の開口部に相当する。   The third opening 118 communicates with the through hole 310 formed in the adhesive layer 300. In the present embodiment, the opening area of the third opening 118 and the opening area in the cross section orthogonal to the vertical direction of the through hole 310 formed in the adhesive layer 300 are substantially the same. The gas relay flow passage 116 corresponds to the third flow passage in the claims, and the second opening 117 corresponds to the opening on the porous portion side in the third flow passage in the claims. Do.

このように、収容室１４０内に絶縁材料により形成された充填部材１６０が充填されていることにより、収容室１４０内を経由したセラミックス部材１００とベース部材２００との間の放電や収容室１４０内でのヘリウムガスの放電の発生が抑制される。   As described above, by filling the filling member 160 formed of the insulating material in the storage chamber 140, the discharge between the ceramic member 100 and the base member 200 passing through the inside of the storage chamber 140 and the inside of the storage chamber 140. Generation of the discharge of helium gas at

図２および図４に示すように、図示しないヘリウムガス源から供給されたヘリウムガスが、ガス源接続孔２２１からベース部材２００内部のガス供給流路２２０内に流入する。ガス供給流路２２０内に流入したヘリウムガスは、ガス供給流路２２０からガス供給孔２２２を経て接着層３００の貫通孔３１０内に流入する。貫通孔３１０内に流入したヘリウムガスは、セラミックス部材１００の内部のガス中継流路１１６と、収容室１４０内に充填された充填部材１６０の内部とを通過して、セラミックス部材１００の内部のガス噴出流路１１０を構成する第１の縦流路１１１内に流入し、横流路１１４および第２の縦流路１１２を経て吸着面Ｓ１に形成された各ガス噴出孔１０２から噴出する。このようにして、吸着面Ｓ１と半導体ウェハＷの表面との間に存在する空間に、ヘリウムガスが供給される。   As shown in FIGS. 2 and 4, helium gas supplied from a helium gas source (not shown) flows from the gas source connection hole 221 into the gas supply flow passage 220 inside the base member 200. The helium gas that has flowed into the gas supply flow passage 220 flows from the gas supply flow passage 220 into the through hole 310 of the adhesive layer 300 through the gas supply hole 222. The helium gas having flowed into the through hole 310 passes through the gas relay flow path 116 inside the ceramic member 100 and the inside of the filling member 160 filled in the storage chamber 140, and the gas inside the ceramic member 100 The gas flows into the first vertical flow passage 111 constituting the jet flow passage 110, and is jetted from the gas jet holes 102 formed in the adsorption surface S1 through the horizontal flow passage 114 and the second vertical flow passage 112. Thus, helium gas is supplied to the space existing between the adsorption surface S1 and the surface of the semiconductor wafer W.

Ａ−３．静電チャック１０の製造方法：
本実施形態における静電チャック１０の製造方法を説明する。はじめに、セラミックス部材１００を作製する。例えば、複数のセラミックスグリーンシート（例えばアルミナグリーンシート）を準備し、各セラミックスグリーンシートに、チャック電極４００や各ガス流路（ガス噴出流路１１０やガス中継流路１１６）等を構成するための孔開け加工やメタライズインクの印刷等を行う。この際に、上述の収容室１４０を構成するための孔開け加工も行う。その後、複数のセラミックスグリーンシートを積層する。その際、積層されたセラミックスグリーンシートに形成された収容室１４０内に、充填部材１６０の焼成前の前駆体（図示せず）を配置する。これにより、充填部材１６０の前駆体が内部に配置されたセラミックスグリーンシートの積層体が形成される。その積層体を熱圧着し、所定の円板形状にカットすることにより、充填部材１６０の前駆体が内部に配置されたセラミックス部材１００の焼成前の前駆体が形成される。そして、セラミックス部材１００の前駆体を焼成し、最後に研磨加工等を行うことにより、セラミックス部材１００が製造される。 A-3. Method of manufacturing electrostatic chuck 10:
A method of manufacturing the electrostatic chuck 10 in the present embodiment will be described. First, the ceramic member 100 is manufactured. For example, a plurality of ceramic green sheets (for example, alumina green sheets) are prepared, and chuck electrodes 400 and gas flow paths (gas ejection flow paths 110 and gas relay flow paths 116) and the like are formed in each ceramic green sheet. Performs drilling and printing of metalized ink. At this time, drilling is also performed to form the above-described storage chamber 140. Thereafter, a plurality of ceramic green sheets are laminated. At that time, a precursor (not shown) before firing of the filling member 160 is disposed in the storage chamber 140 formed in the laminated ceramic green sheet. Thereby, a laminate of ceramic green sheets in which the precursor of the filling member 160 is disposed is formed. The laminated body is thermocompression-bonded and cut into a predetermined disk shape, whereby a precursor before firing of the ceramic member 100 in which the precursor of the filling member 160 is disposed is formed. And the ceramic member 100 is manufactured by baking the precursor of the ceramic member 100 and finally performing a grinding process etc.

また、ベース部材２００を準備する。ベース部材２００は、公知の製造方法によって製造可能である。次に、セラミックス部材１００とベース部材２００とを接合する。具体的には、セラミックス部材１００の下面Ｓ２とベース部材２００の上面Ｓ３とを、接着剤を介して貼り合わせた状態で、接着剤を硬化させる硬化処理を行うことにより、接着層３００を形成する。なお、セラミックス部材１００とベース部材２００との間に接着剤を配置する際には、上述した貫通孔３１０に対応する孔を設け、接着剤の硬化処理によってできる接着層３００に貫通孔３１０が形成されるようにする。以上の工程により、上述した構成の静電チャック１０の製造が完了する。   Also, the base member 200 is prepared. The base member 200 can be manufactured by a known manufacturing method. Next, the ceramic member 100 and the base member 200 are joined. Specifically, in a state where lower surface S2 of ceramic member 100 and upper surface S3 of base member 200 are bonded via an adhesive, the adhesive layer 300 is formed by performing a curing process for curing the adhesive. . When the adhesive is disposed between the ceramic member 100 and the base member 200, a hole corresponding to the through hole 310 described above is provided, and the through hole 310 is formed in the adhesive layer 300 formed by the curing treatment of the adhesive. To be done. The above steps complete the manufacture of the electrostatic chuck 10 having the above-described configuration.

Ａ−４．本実施形態の効果：
以上説明したように、本実施形態における静電チャック１０では、セラミックス部材１００より気孔率が高い充填部材１６０がセラミックス部材１００の内部に配置されている（図２および図４参照）。この充填部材１６０は、セラミックス部材１００の吸着面Ｓ１に開口するガス噴出流路１１０と、下面Ｓ２に開口するガス中継流路１１６とに連通している。これにより、例えば充填部材１６０を備えずにガス噴出流路１１０とガス中継流路１１６とが直接つながった構成に比べて、セラミックス部材１００の吸着面Ｓ１からベース部材２００までの沿面距離が長くなるため、吸着面Ｓ１に保持された半導体ウェハＷとベース部材２００とが短絡することを抑制することができる。 A-4. Effects of the present embodiment:
As described above, in the electrostatic chuck 10 according to this embodiment, the filling member 160 having a higher porosity than the ceramic member 100 is disposed inside the ceramic member 100 (see FIGS. 2 and 4). The filling member 160 is in communication with the gas injection flow passage 110 opened to the adsorption surface S1 of the ceramic member 100 and the gas relay flow passage 116 opened to the lower surface S2. Thus, for example, the creeping distance from the adsorption surface S1 of the ceramic member 100 to the base member 200 is longer than in a configuration in which the gas injection flow path 110 and the gas relay flow path 116 are directly connected without including the filling member 160 Therefore, a short circuit between the semiconductor wafer W held on the suction surface S1 and the base member 200 can be suppressed.

また、セラミックス部材１００の下面Ｓ２に開口するガス中継流路１１６の第３の開口部１１８の開口面積は、充填部材１６０の断面積より小さい（図４参照）。これにより、例えば、充填部材１６０とベース部材２００との間に接合部が介在せずに比較的に大きい空洞が介在している従来の構成に比べて、接着層３００に対するセラミックス部材１００の接合面積が増えるので、充填部材１６０の存在に起因してセラミックス部材１００からベース部材２００への伝熱性（熱引き特性）が局所的に低下することが抑制され、セラミックス部材１００の吸着面Ｓ１における温度特異点となることが抑制され、温度分布の均一性の向上を図ることができる。以下、この点について具体的に説明する。   In addition, the opening area of the third opening 118 of the gas relay flow passage 116 opened in the lower surface S2 of the ceramic member 100 is smaller than the cross-sectional area of the filling member 160 (see FIG. 4). Thus, for example, the bonding area of the ceramic member 100 to the adhesive layer 300 compared to the conventional configuration in which a relatively large cavity is interposed between the filling member 160 and the base member 200 without the joining portion being interposed. As a result, the heat conductivity (heat transfer characteristic) from the ceramic member 100 to the base member 200 is suppressed from being locally reduced due to the presence of the filling member 160, and the temperature singularity at the adsorption surface S1 of the ceramic member 100 is suppressed. It is suppressed that it becomes a point and the improvement of the uniformity of temperature distribution can be aimed at. Hereinafter, this point will be specifically described.

図５は、比較例の静電チャック１０Ｘの構成を概略的に示す説明図である。図５には、比較例の静電チャック１０Ｘの構成の内、図４に示す部分（Ｘ１部）と同等の部分Ｘ１Ａの構成が拡大して示されている。以下、比較例の静電チャック１０Ｘのうち、本実施形態の静電チャック１０と共通する構成については同じ符号を付して説明を省略し、異なる構成のみ説明する。図５に示す比較例の静電チャック１０Ｘは、図４に示す本実施形態の静電チャック１０と比較して、収容室および充電部材の位置が異なる。   FIG. 5 is an explanatory view schematically showing the configuration of the electrostatic chuck 10X of the comparative example. Of the configuration of the electrostatic chuck 10X of the comparative example, the configuration of a portion X1A equivalent to the portion (X1 portion) shown in FIG. 4 is shown enlarged in FIG. Hereinafter, among the electrostatic chucks 10X of the comparative example, the same reference numerals are given to the same components as those of the electrostatic chuck 10 of the present embodiment, and the description thereof will be omitted, and only different components will be described. The electrostatic chuck 10X of the comparative example shown in FIG. 5 differs from the electrostatic chuck 10 of the present embodiment shown in FIG. 4 in the positions of the storage chamber and the charging member.

具体的には、図５に示すように、比較例の静電チャック１０Ｘでは、セラミックス部材１００Ａの下面Ｓ２に凹所１４０Ａが形成されている。凹所１４０Ａは、吸着面Ｓ１に近い側の内表面である上面１４４Ａと、セラミックス部材１００の下面Ｓ２に開口した下側開口部１４５Ａと、上面１４４Ａの周縁と下側開口部１４５Ａの周縁とをつなぐ側面１４２Ａと、を有する。この凹所１４０Ａ内に充填部材１６０Ａが配置されている。充填部材１６０Ａは、本実施形態における充填部材１６０と略同一構造であるものとする。   Specifically, as shown in FIG. 5, in the electrostatic chuck 10X of the comparative example, a recess 140A is formed in the lower surface S2 of the ceramic member 100A. The recess 140A includes an upper surface 144A, which is an inner surface closer to the suction surface S1, a lower opening 145A opened in the lower surface S2 of the ceramic member 100, and the periphery of the upper surface 144A and the periphery of the lower opening 145A. And a connecting side 142A. The filling member 160A is disposed in the recess 140A. The filling member 160A has substantially the same structure as the filling member 160 in the present embodiment.

また、比較例の静電チャック１０Ｘでは、下側開口部１４５Ａの開口面積は、充填部材１６０Ａにおける上下方向に直交する方向の断面の面積と略同一である。このため、充填部材１６０Ａの表面（下面１６５Ａ）が下側開口部１４５Ａからセラミックス部材１００Ａの下面Ｓ２に露出している。セラミックス部材１００Ａとベース部材２００とを接合する接着層３００Ａには、下側開口部１４５Ａに連通する貫通孔３１０Ａが形成されている。貫通孔３１０Ａの開口面積は、下側開口部１４５Ａの開口面積と略同一である。ここで、仮に、貫通孔３１０Ａの開口面積が、下側開口部１４５Ａの開口面積より小さいとすると、例えば、充填部材１６０Ａにおけるガスの通気性が低下するおそれがある。すなわち、セラミックス部材１００Ａとベース部材２００との接合段階において、接着層３００Ａを形成するための硬化前の接合剤が、多孔質の充填部材１６０Ａの気孔内に入り込み、その入り込んだ接着剤が硬化することによって充填部材１６０Ａに目詰まりが生じ、その結果、充填部材１６０Ａにおけるガスの通気性が低下するおそれがある。このため、比較例の静電チャック１０Ｘのように、充填部材１６０Ａの表面がセラミックス部材１００Ａの下面Ｓ２に露出する構成では、充填部材１６０Ａの露出する表面に接着層３００Ａが接触しないようにすることが好ましい。そのため、比較例の静電チャック１０Ｘでは、接着層３００Ａによる充填部材１６０Ａの通気性低下を抑制するためには、充填部材１６０Ａの露出する表面（下面対向面１６５）に対応した比較的に大きな貫通孔３１０Ａを形成せざるを得ない。   Further, in the electrostatic chuck 10X of the comparative example, the opening area of the lower opening 145A is substantially the same as the area of the cross section of the filling member 160A in the direction perpendicular to the vertical direction. For this reason, the surface (lower surface 165A) of the filling member 160A is exposed to the lower surface S2 of the ceramic member 100A from the lower opening 145A. In the adhesive layer 300A joining the ceramic member 100A and the base member 200, a through hole 310A communicating with the lower opening 145A is formed. The opening area of the through hole 310A is substantially the same as the opening area of the lower opening 145A. Here, if the opening area of the through hole 310A is smaller than the opening area of the lower opening 145A, for example, the gas permeability of the filling member 160A may be reduced. That is, in the bonding step between the ceramic member 100A and the base member 200, the bonding agent before curing for forming the adhesive layer 300A enters into the pores of the porous filling member 160A, and the adhesive which has penetrated is hardened. As a result, clogging may occur in the filling member 160A, and as a result, the gas permeability of the filling member 160A may be reduced. For this reason, as in the electrostatic chuck 10X of the comparative example, in a configuration in which the surface of the filling member 160A is exposed to the lower surface S2 of the ceramic member 100A, the adhesive layer 300A should not contact the exposed surface of the filling member 160A. Is preferred. Therefore, in the electrostatic chuck 10X of the comparative example, in order to suppress the decrease in air permeability of the filling member 160A due to the adhesive layer 300A, a relatively large penetration corresponding to the exposed surface (bottom opposing surface 165) of the filling member 160A. There is no choice but to form the hole 310A.

このように、充填部材１６０Ａの表面がセラミックス部材１００Ａの下面Ｓ２に露出する比較例の静電チャック１０Ｘでは、次に述べるように、セラミックス部材１００Ａの吸着面Ｓ１における温度特異点となり、温度分布が不均一になり、また、セラミックス部材１００Ａとベース部材２００との接合強度が低下するおそれがある。   Thus, in the electrostatic chuck 10X of the comparative example in which the surface of the filling member 160A is exposed to the lower surface S2 of the ceramic member 100A, as described below, the temperature singularity point in the suction surface S1 of the ceramic member 100A and the temperature distribution It becomes uneven and there is a possibility that the joint strength of ceramic member 100A and base member 200 may fall.

すなわち、比較例の静電チャック１０Ｘでは、充填部材１６０Ａの露出する表面（下面対向面１６５）に対応した比較的に大きな貫通孔３１０Ａによって、充填部材１６０Ａとベース部材２００との間に、接着層３００Ａより熱伝導率が低い空洞が形成される。空洞の熱伝導率は、接着層３００の熱伝導率に比べて低い。このため、セラミックス部材１００Ａより熱伝導率が低い充填部材１６０Ａの下に、さらに熱伝導率が低い空洞が連続して存在していることになる。換言すれば、充填部材１６０Ａとベース部材２００との間には、特に熱伝導率が低い空洞しか存在しない。このため、充填部材１６０Ａが配置された付近において熱が蓄積されやすく、セラミックス部材１００Ａからベース部材２００への伝熱性が局所的に低下し、セラミックス部材１００Ａの吸着面Ｓ１における温度特異点となり、温度分布の不均一になるおそれがある。また、比較例の静電チャック１０Ｘでは、接着層３００Ａとセラミックス部材１００Ａおよびベース部材２００との接触面積が比較的に小さいため、セラミックス部材１００Ａとベース部材２００との接合強度が低下するおそれがある。   That is, in the electrostatic chuck 10X of the comparative example, an adhesive layer is formed between the filling member 160A and the base member 200 by the relatively large through hole 310A corresponding to the exposed surface (lower surface facing surface 165) of the filling member 160A. A cavity with a thermal conductivity lower than 300 A is formed. The thermal conductivity of the cavity is lower than the thermal conductivity of the adhesive layer 300. For this reason, under the filling member 160A having a thermal conductivity lower than that of the ceramic member 100A, a cavity having a lower thermal conductivity is continuously present. In other words, there is only a cavity having a particularly low thermal conductivity between the filling member 160A and the base member 200. Therefore, heat is easily accumulated in the vicinity where the filling member 160A is disposed, the heat conductivity from the ceramic member 100A to the base member 200 is locally reduced, and a temperature singular point on the adsorption surface S1 of the ceramic member 100A is obtained. Distribution may be uneven. Further, in the electrostatic chuck 10X of the comparative example, since the contact area between the adhesive layer 300A and the ceramic member 100A and the base member 200 is relatively small, the bonding strength between the ceramic member 100A and the base member 200 may be reduced. .

これに対して、本実施形態の静電チャック１０では、図４に示すように、充填部材１６０はセラミックス部材１００の下面Ｓ２に露出しておらず、下面Ｓ２には、充填部材１６０の断面積より小さい開口面積を有する第３の開口部１１８が形成されている。すなわち、充填部材１６０の下には、主として、熱伝導率が比較的に高いセラミックス部材１００のセラミックス部分が存在している。このため、本実施形態の静電チャック１０によれば、充填部材１６０Ａとベース部材２００との間に空洞しか存在しない比較例の静電チャック１０Ｘに比べて、セラミックス部材１００からベース部材２００への伝熱性が局所的に低下することが抑制される。   On the other hand, in the electrostatic chuck 10 of the present embodiment, as shown in FIG. 4, the filling member 160 is not exposed to the lower surface S2 of the ceramic member 100, and the cross section of the filling member 160 is on the lower surface S2. A third opening 118 is formed having a smaller opening area. That is, under the filling member 160, the ceramic portion of the ceramic member 100 having a relatively high thermal conductivity is mainly present. For this reason, according to the electrostatic chuck 10 of the present embodiment, compared to the electrostatic chuck 10X of the comparative example in which only a cavity exists between the filling member 160A and the base member 200, the ceramic member 100 to the base member 200. It is suppressed that heat transfer property falls locally.

また、本実施形態の静電チャック１０では、接着層３００には、第３の開口部１１８に対応した比較的小さい開口面積を有する貫通孔３１０が形成されており、充填部材１６０とベース部材２００との間に形成される空洞が形成される範囲が狭い。このため、本実施形態の静電チャック１０によれば、充填部材１６０Ａとベース部材２００との間に比較的に大きい空洞が存在する比較例の静電チャック１０Ｘに比べて、セラミックス部材１００からベース部材２００への伝熱性が局所的に低下することがさらに効果的に抑制される。しかも、本実施形態の静電チャック１０では、接着層３００とセラミックス部材１００Ａおよびベース部材２００との接触面積が比較的に大きいため、比較例の静電チャック１０Ｘに比べて、セラミックス部材１００とベース部材２００との接合強度が高い。   Further, in the electrostatic chuck 10 of the present embodiment, the through hole 310 having a relatively small opening area corresponding to the third opening 118 is formed in the adhesive layer 300, and the filling member 160 and the base member 200 are formed. The range in which the cavity formed between the two is formed is narrow. Therefore, according to the electrostatic chuck 10 of the present embodiment, compared to the electrostatic chuck 10X of the comparative example in which a relatively large cavity exists between the filling member 160A and the base member 200, the ceramic member 100 to the base It is further effectively suppressed that the heat conductivity to the member 200 is locally reduced. Moreover, in the electrostatic chuck 10 of the present embodiment, the contact area between the adhesive layer 300 and the ceramic member 100A and the base member 200 is relatively large, so compared to the electrostatic chuck 10X of the comparative example, the ceramic member 100 and the base The bonding strength with the member 200 is high.

上記実施形態では、上下方向（Ｚ軸方向）視で、第１の開口部１１３および第２の開口部１１７の両方は、充填部材１６０の面方向における中央寄りに位置している。これにより、第１の開口部１１３等が、充填部材１６０の周縁寄りに位置している構成に比べて、セラミックス部材１００の吸着面Ｓ１からベース部材２００までの沿面距離が長くなるため、吸着面Ｓ１に保持された半導体ウェハＷとベース部材２００との短絡を、より効果的に抑制することができる。   In the above embodiment, both the first opening 113 and the second opening 117 are located closer to the center in the surface direction of the filling member 160 in the vertical direction (Z-axis direction). As a result, the creeping distance from the suction surface S1 of the ceramic member 100 to the base member 200 is longer than in the configuration in which the first opening 113 and the like are positioned closer to the periphery of the filling member 160. A short circuit between the semiconductor wafer W held by S1 and the base member 200 can be suppressed more effectively.

また、本実施形態では、充填部材１６０の上面対向面１６４は、上記中心線Ｌより吸着面Ｓ１側に位置している。これにより、充填部材１６０の上面対向面１６４が中心線Ｌよりセラミックス部材１００の下面Ｓ２側に位置している構成に比べて、充填部材１６０による絶縁効果を向上させることができる。   Further, in the present embodiment, the upper surface facing surface 164 of the filling member 160 is located closer to the suction surface S1 than the center line L. Thereby, the insulating effect by the filling member 160 can be improved as compared with the configuration in which the upper surface facing surface 164 of the filling member 160 is located closer to the lower surface S2 of the ceramic member 100 than the center line L.

また、本実施形態では、セラミックス部材１００の下面Ｓ２から充填部材１６０までの第１の最短距離Ｄ１は、セラミックス部材１００の吸着面Ｓ１から充填部材１６０までの第２の最短距離Ｄ２より長い。これにより、絶縁効果を高めるために充填部材１６０をセラミックス部材１００の吸着面Ｓ１に近づけつつ、充填部材１６０が大型になることを抑制できる。   Further, in the present embodiment, the first shortest distance D1 from the lower surface S2 of the ceramic member 100 to the filling member 160 is longer than the second shortest distance D2 from the suction surface S1 of the ceramic member 100 to the filling member 160. As a result, while the filling member 160 is brought close to the suction surface S1 of the ceramic member 100 in order to enhance the insulation effect, the filling member 160 can be prevented from becoming large.

Ａ−５．本実施形態における変形例：
図６は、実施形態における変形例の静電チャック１０Ｂの充填部材１６０周辺部（Ｘ１Ｂ部）を拡大して示す説明図である。変形例の静電チャック１０Ｂの構成の内、上記実施形態の静電チャック１０と同一の構成については、同一符号を付すことによって、その説明を省略する。 A-5. Modification of the present embodiment:
FIG. 6 is an enlarged explanatory view showing the periphery (portion X1B) of the filling member 160 of the electrostatic chuck 10B according to the modification of the embodiment. Among the configurations of the electrostatic chuck 10B of the modified example, the same components as those of the electrostatic chuck 10 of the above embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

上述した実施形態の静電チャック１０では、セラミックス部材１００は、一体成形されたものであり、充填部材１６０は、そのセラミックス部材１００の内部に埋設されていた（図２および図４参照）。これに対して、図６に示すように、変形例の静電チャック１０Ｂでは、セラミックス部材１００Ｂは、第１のセラミックス部１３２と第２のセラミックス部１３４とを備えて構成されており、充填部材１６０は、第１のセラミックス部１３２と第２のセラミックス部１３４との間に配置されている。   In the electrostatic chuck 10 of the embodiment described above, the ceramic member 100 is integrally formed, and the filling member 160 is embedded in the ceramic member 100 (see FIGS. 2 and 4). On the other hand, as shown in FIG. 6, in the electrostatic chuck 10B of the modification, the ceramic member 100B is configured to include the first ceramic portion 132 and the second ceramic portion 134, and the filling member A portion 160 is disposed between the first ceramic portion 132 and the second ceramic portion 134.

具体的には、変形例の静電チャック１０Ｂでは、第１のセラミックス部１３２は、上記セラミックス部材１００と略同一の外形を有し、また、第１のセラミックス部１３２の下面Ｓ２Ｂに第１の凹所１３６が形成されている。第１の凹所１３６は、吸着面Ｓ１に近い側の内表面である上面１４４Ｂと、第１のセラミックス部１３２の下面Ｓ２Ｂに開口した下側開口部１４７Ｂと、上面１４４Ｂの周縁と下側開口部１４７Ｂの周縁とをつなぐ側面１４６Ｂと、を有する。この第１の凹所１３６の上下方向の長さは、充填部材１６０の上下方向の長さより長く、かつ、第１の凹所１３６の内径は、充填部材１６０の外径より大きい。   Specifically, in the electrostatic chuck 10B of the modification, the first ceramic portion 132 has an outer shape substantially the same as that of the ceramic member 100, and the first ceramic portion 132 has a first lower surface S2B. A recess 136 is formed. The first recess 136 has an upper surface 144B which is an inner surface closer to the suction surface S1, a lower opening 147B opened to the lower surface S2B of the first ceramic portion 132, and a periphery and lower opening of the upper surface 144B. And a side surface 146B connecting the peripheral edge of the portion 147B. The vertical length of the first recess 136 is longer than the vertical length of the filling member 160, and the inner diameter of the first recess 136 is larger than the outer diameter of the filling member 160.

一方、第２のセラミックス部１３４は、全体としては、略円柱状である。第２のセラミックス部１３４の上面１３４Ｕには、充填部材１６０を収容可能な第２の凹所１４０Ｂが形成されている。第２の凹所１４０Ｂは、第２のセラミックス部１３４の上面１３４Ｕに開口した上側開口部１３７と、下面Ｓ２Ｂに近い側の内表面である底面１４５Ｂと、上側開口部１３７の周縁と底面１４５Ｂの周縁とをつなぐ側面１４２Ｂと、を有する。この第２の凹所１４０Ｂの上下方向の寸法は、充填部材１６０の上下方向の寸法と略同一であり、かつ、第２の凹所１４０Ｂの内径は、充填部材１６０の外径と略同一である。このため、第２の凹所１４０Ｂ内に充填部材１６０を収容可能である。また、第２の凹所１４０Ｂの底面１４５Ｂには、第２のセラミックス部１３４の下面１３４Ｄまで貫通するガス中継流路１１６Ｂが形成されている。ガス中継流路１１６Ｂは、底面１４５Ｂに開口する第２の開口部１１７Ｂと、下面１３４Ｄに開口する第３の開口部１１８Ｂとを有する。ガス中継流路１１６Ｂの形状等は、上述のガス中継流路１１６と略同一である。   On the other hand, the second ceramic portion 134 has a substantially cylindrical shape as a whole. In the upper surface 134U of the second ceramic portion 134, a second recess 140B capable of accommodating the filling member 160 is formed. The second recess 140B includes an upper opening 137 opened in the upper surface 134U of the second ceramic portion 134, a bottom surface 145B which is an inner surface closer to the lower surface S2B, and a periphery of the upper opening 137 and the bottom surface 145B. And a side surface 142B connecting the peripheral edge. The dimension in the vertical direction of the second recess 140B is substantially the same as the dimension in the vertical direction of the filling member 160, and the inner diameter of the second recess 140B is substantially the same as the outer diameter of the filling member 160. is there. For this reason, the filling member 160 can be accommodated in the second recess 140B. Further, a gas relay flow passage 116B penetrating to the lower surface 134D of the second ceramic portion 134 is formed on the bottom surface 145B of the second recess 140B. The gas relay flow passage 116B has a second opening 117B opened to the bottom surface 145B and a third opening 118B opened to the lower surface 134D. The shape and the like of the gas relay flow passage 116B are substantially the same as the gas relay flow passage 116 described above.

また、第１の凹所１３６の上下方向の寸法は、第２のセラミックス部１３４の上下方向の寸法と略同一であり、かつ、第１の凹所１３６の内径は、第２のセラミックス部１３４の外径と略同一である。このため、第１の凹所１３６内に第２のセラミックス部１３４を収容可能である。例えば、第１のセラミックス部１３２と第２のセラミックス部１３４とを個別に成形し、第２のセラミックス部１３４の第２の凹所１４０Ｂ内に充填部材１６０を収容させ、第２のセラミックス部１３４の上面１３４Ｕと、第１のセラミックス部１３２の第１の凹所１３６の上面１４４Ｂとが対向するように、第１の凹所１３６内に第２のセラミックス部１３４を収容させる。これにより、充填部材１６０は、第１のセラミックス部１３２と第２のセラミックス部１３４とによって上下に挟まれた状態でセラミックス部材１００Ｂの内部に配置されている。なお、第２のセラミックス部１３４と第１のセラミックス部１３２の第１の凹所１３６との間には、接着層（図示せず）が配置されていることが好ましい。また、充填部材１６０と上面対向面１６４の第２の凹所１４０Ｂとの間にも、接着層（図示せず）が配置されていることが好ましい。   Further, the dimension in the vertical direction of the first recess 136 is substantially the same as the dimension in the vertical direction of the second ceramic portion 134, and the inner diameter of the first recess 136 is the second ceramic portion 134. Substantially the same as the outer diameter of For this reason, the second ceramic portion 134 can be accommodated in the first recess 136. For example, the first ceramic portion 132 and the second ceramic portion 134 are formed separately, and the filling member 160 is accommodated in the second recess 140 B of the second ceramic portion 134, and the second ceramic portion 134 is formed. The second ceramic portion 134 is accommodated in the first recess 136 such that the upper surface 134 U of the first ceramic portion 132 faces the upper surface 144 B of the first recess 136 of the first ceramic portion 132. Thus, the filling member 160 is disposed inside the ceramic member 100B in a state of being vertically sandwiched by the first ceramic portion 132 and the second ceramic portion 134. An adhesive layer (not shown) is preferably disposed between the second ceramic portion 134 and the first recess 136 of the first ceramic portion 132. In addition, it is preferable that an adhesive layer (not shown) be disposed also between the filling member 160 and the second recess 140B of the upper surface facing surface 164.

以上説明したように、変形例の静電チャック１０Ｂにおいても、セラミックス部材１００Ｂより気孔率が高い充填部材１６０がセラミックス部材１００Ｂの内部に配置されている（図６参照）。この充填部材１６０は、セラミックス部材１００の吸着面Ｓ１に開口するガス噴出流路１１０と、下面Ｓ２Ｂに開口するガス中継流路１１６Ｂとに連通している。これにより、例えば充填部材１６０を備えずにガス噴出流路１１０とガス中継流路１１６Ｂとが直接つながった構成に比べて、セラミックス部材１００Ｂの吸着面Ｓ１からベース部材２００までの沿面距離が長くなるため、吸着面Ｓ１に保持された半導体ウェハＷとベース部材２００とが短絡することを抑制することができる。   As described above, also in the electrostatic chuck 10B of the modification, the filling member 160 having a higher porosity than the ceramic member 100B is disposed inside the ceramic member 100B (see FIG. 6). The filling member 160 is in communication with the gas injection flow passage 110 opened in the suction surface S1 of the ceramic member 100 and the gas relay flow passage 116B opened in the lower surface S2B. Thus, for example, the creeping distance from the adsorption surface S1 of the ceramic member 100B to the base member 200 is longer than in a configuration in which the gas ejection flow path 110 and the gas relay flow path 116B are directly connected without providing the filling member 160, for example. Therefore, a short circuit between the semiconductor wafer W held on the suction surface S1 and the base member 200 can be suppressed.

Ｂ．その他の変形例：
本明細書で開示される技術は、上述の実施形態に限られるものではなく、その要旨を逸脱しない範囲において種々の形態に変形することができ、例えば次のような変形も可能である。 B. Other variations:
The technology disclosed in the present specification is not limited to the above-described embodiment, and can be modified into various forms without departing from the scope of the present invention. For example, the following modifications are also possible.

上記各実施形態における静電チャック１０の構成は、あくまで一例であり、種々変形可能である。例えば、上記実施形態では、充填部材１６０の形状は、略円柱状であるとしたが、これに限らず、例えば略円錐状や略角柱状などであるとしてもよい。この場合は、充填部材１６０における第１の方向（Ｚ軸方向）に直交する断面の面積のうち、最大の面積を「充填部材の断面の面積」とする。また、充填部材１６０の形状は、収容室１４０の形状と異なっており、充填部材１６０と収容室１４０との間に隙間が存在するとしてもよい。また、充填部材１６０と収容室１４０との間に接着層（図示せず）が配置されているとしてもよい。なお、接着層の熱伝導率は、充填部材１６０の熱伝導率より高く、かつ、セラミックス部材１００の熱伝導率より低いことが好ましい。接着層は、例えばシリコーン系樹脂やアクリル系樹脂、エポキシ系樹脂等の接着剤により構成されていることが好ましい。また、充填部材１６０は、セラミックス部材１００と一体で形成されていてもよいし、別体として形成されてもよい。例えば、充填部材１６０は、セラミックス部材１００と同一材料で形成されており、かつ、気孔率がセラミックス部材１００より高い構成であるとしてもよい。   The configuration of the electrostatic chuck 10 in each of the above embodiments is merely an example, and various modifications are possible. For example, in the above embodiment, the shape of the filling member 160 is substantially cylindrical, but the shape is not limited thereto, and may be substantially conical or substantially prismatic, for example. In this case, the largest area of the area of the cross section orthogonal to the first direction (Z-axis direction) in the filling member 160 is taken as “the area of the cross section of the filling member”. Further, the shape of the filling member 160 is different from the shape of the storage chamber 140, and a gap may be present between the filling member 160 and the storage chamber 140. Also, an adhesive layer (not shown) may be disposed between the filling member 160 and the storage chamber 140. The thermal conductivity of the adhesive layer is preferably higher than the thermal conductivity of the filling member 160 and lower than the thermal conductivity of the ceramic member 100. The adhesive layer is preferably made of, for example, an adhesive such as a silicone resin, an acrylic resin, or an epoxy resin. In addition, the filling member 160 may be formed integrally with the ceramic member 100 or may be formed separately. For example, the filling member 160 may be formed of the same material as the ceramic member 100 and may have a higher porosity than the ceramic member 100.

上記実施形態では、１つの充填部材１６０に対して１つのガス中継流路１１６（第３の流路）が連通しているとしたが、１つの充填部材１６０に対して複数のガス中継流路１１６が連通しているとしてもよい。このような構成の場合、複数のガス中継流路１１６における第３の開口部１１８の開口面積の合計が、充填部材１６０の断面積より小さければ本発明の効果を得ることができる。   In the above embodiment, although one gas relay channel 116 (third channel) is in communication with one filling member 160, a plurality of gas relay channels may be connected to one filling member 160. 116 may be in communication. In such a configuration, if the total of the opening areas of the third openings 118 in the plurality of gas relay flow paths 116 is smaller than the cross-sectional area of the filling member 160, the effect of the present invention can be obtained.

また、上記実施形態では、上下方向（Ｚ軸方向）視で、第１の開口部１１３は、充填部材１６０の面方向における中央寄りに位置しているとしたが、これに限らず、第１の開口部１１３は、充填部材１６０の面方向における周縁寄りに位置しているとしてもよい。また、上記実施形態では、第１の開口部１１３の全体は充填部材１６０に重なるとしたが、これに限らず、上下方向視で、第１の開口部１１３の一部または全部は充填部材１６０に重ならないとしてもよい。さらに、上記実施形態では、ガス噴出流路１１０（第１の流路）は、充填部材１６０の上面対向面１６４に連通しているとしたが、ガス噴出流路１１０が充填部材１６０の側面１６２に連通しているとしてもよい。但し、上記実施形態の構成であれば、ガスの供給経路の短縮化を図りつつ、充填部材１６０による半導体ウェハＷとベース部材２００との短絡抑制の効果を得ることができる。   In the above embodiment, the first opening 113 is located closer to the center in the surface direction of the filling member 160 in the vertical direction (Z-axis direction), but the present invention is not limited to this. The opening 113 may be located closer to the peripheral edge in the surface direction of the filling member 160. In the above embodiment, the entire first opening 113 is overlapped with the filling member 160. However, the present invention is not limited to this. A part or the whole of the first opening 113 is the filling member 160 in the vertical direction. It does not have to overlap. Furthermore, in the above embodiment, the gas ejection flow channel 110 (first flow channel) is in communication with the upper surface facing surface 164 of the filling member 160, but the gas ejection flow channel 110 is the side surface 162 of the filling member 160. It may be in communication with the However, with the configuration of the above embodiment, it is possible to obtain the effect of suppressing the short circuit between the semiconductor wafer W and the base member 200 by the filling member 160 while shortening the gas supply path.

また、上記実施形態において、充填部材１６０の上面対向面１６４および下面対向面１６５は、中心線Ｌより吸着面Ｓ１側に位置しているとしたが、これに限らず、例えば、充填部材１６０の上面対向面１６４は中心線Ｌより吸着面Ｓ１側に位置しており、下面対向面１６５は中心線Ｌよりセラミックス部材１００の下面Ｓ２側に位置しているとしてもよいし、充填部材１６０の上面対向面１６４および下面対向面１６５の両方がセラミックス部材１００の下面Ｓ２側に位置しているとしてもよい。   In the above embodiment, the upper surface facing surface 164 and the lower surface facing surface 165 of the filling member 160 are located closer to the suction surface S1 than the center line L, but the invention is not limited thereto. The upper surface facing surface 164 may be located closer to the suction surface S1 than the center line L, and the lower surface facing surface 165 may be located closer to the lower surface S2 of the ceramic member 100 than the center line L. Both the opposing surface 164 and the lower surface opposing surface 165 may be located on the lower surface S2 side of the ceramic member 100.

また、上記実施形態では、上下方向（Ｚ軸方向）視で、第２の開口部１１７は、充填部材１６０の面方向における中央寄りに位置しているとしたが、これに限らず、第２の開口部１１７は、充填部材１６０の面方向における周縁寄りに位置しているとしてもよい。また、上記実施形態では、第２の開口部１１７の全体は充填部材１６０に重なるとしたが、これに限らず、上下方向視で、第２の開口部１１７の一部または全部は充填部材１６０に重ならないとしてもよい。さらに、上記実施形態では、ガス中継流路１１６（第３の流路）は、充填部材１６０の下面対向面１６５に連通しているとしたが、ガス中継流路１１６が充填部材１６０の側面１６２に連通しているとしてもよい。但し、上記実施形態の構成であれば、ガスの供給経路の短縮化を図りつつ、充填部材１６０による半導体ウェハＷとベース部材２００との短絡抑制の効果を得ることができる。   In the above embodiment, the second opening 117 is located closer to the center in the surface direction of the filling member 160 in the vertical direction (Z-axis direction), but the present invention is not limited to this. The opening 117 may be positioned near the periphery in the surface direction of the filling member 160. In the above embodiment, the entire second opening 117 is overlapped with the filling member 160. However, the present invention is not limited to this. A part or all of the second opening 117 is the filling member 160 in the vertical direction. It does not have to overlap. Furthermore, in the above embodiment, although the gas relay channel 116 (third channel) communicates with the lower surface facing surface 165 of the filling member 160, the gas relay channel 116 is the side surface 162 of the filling member 160. It may be in communication with the However, with the configuration of the above embodiment, it is possible to obtain the effect of suppressing the short circuit between the semiconductor wafer W and the base member 200 by the filling member 160 while shortening the gas supply path.

また、上記実施形態では、上下方向（Ｚ軸方向）視で、第３の開口部１１８の全体は、充填部材１６０に重なるとしたが、これに限らず、上下方向視で、第３の開口部１１８の一部または全部は充填部材１６０に重ならないとしてもよい。但し、上記実施形態の構成であれば、ガスの供給経路の短縮化を図りつつ、充填部材１６０による半導体ウェハＷとベース部材２００との短絡抑制の効果を得ることができる。   In the above embodiment, the entire third opening 118 overlaps the filling member 160 in the vertical direction (Z-axis direction). However, the present invention is not limited to this. The third opening can be viewed in the vertical direction. A part or all of the portion 118 may not overlap the filling member 160. However, with the configuration of the above embodiment, it is possible to obtain the effect of suppressing the short circuit between the semiconductor wafer W and the base member 200 by the filling member 160 while shortening the gas supply path.

また、上記実施形態では、第３の開口部１１８の開口面積と、接着層３００に形成された貫通孔３１０の開口面積とは略同一であるとしたが、これに限らず、第３の開口部１１８の開口面積は、貫通孔３１０の開口面積より大きくてもよいし小さくてもよい。但し、上述したように、第３の開口部１１８の開口面積が貫通孔３１０の開口面積以下であれば、接着層３００による充填部材１６０の目詰まりを抑制することができる。また、貫通孔３１０の開口面積は、充填部材１６０の断面積より小さければ、上述の比較例の静電チャック１０Ｘに比べて、接着層３００とセラミックス部材１００Ａおよびベース部材２００との接触面積が大きいため、セラミックス部材１００とベース部材２００との接合強度を向上させることができる。   In the above embodiment, although the opening area of the third opening 118 and the opening area of the through hole 310 formed in the adhesive layer 300 are substantially the same, the present invention is not limited thereto. The opening area of the portion 118 may be larger or smaller than the opening area of the through hole 310. However, as described above, when the opening area of the third opening 118 is equal to or less than the opening area of the through hole 310, clogging of the filling member 160 by the adhesive layer 300 can be suppressed. In addition, if the opening area of through hole 310 is smaller than the cross sectional area of filling member 160, the contact area between adhesive layer 300 and ceramic member 100A and base member 200 is larger than that of electrostatic chuck 10X of the comparative example described above. Therefore, the bonding strength between the ceramic member 100 and the base member 200 can be improved.

また、本実施形態では、セラミックス部材１００の下面Ｓ２から充填部材１６０までの第１の最短距離Ｄ１は、セラミックス部材１００の吸着面Ｓ１から充填部材１６０までの第２の最短距離Ｄ２より長いとしているが、第１の最短距離Ｄ１は、第２の最短距離Ｄ２と同じ、または、第２の最短距離Ｄ２より短いとしてもよい。   Further, in the present embodiment, the first shortest distance D1 from the lower surface S2 of the ceramic member 100 to the filling member 160 is longer than the second shortest distance D2 from the suction surface S1 of the ceramic member 100 to the filling member 160. However, the first shortest distance D1 may be the same as the second shortest distance D2 or shorter than the second shortest distance D2.

また、上記各実施形態において、セラミックス部材１００の内部に、導電性材料（例えば、タングステンやモリブデン等）により形成された抵抗発熱体で構成されたヒータ電極を設けてもよい。このような構成では、ヒータ電極に電源から電圧が印加されると、ヒータ電極が発熱することによってセラミックス部材１００が温められ、セラミックス部材１００の吸着面Ｓ１に保持された半導体ウェハＷが温められる。これにより、半導体ウェハＷの温度制御が実現される。ヒータ電極は、セラミックス部材１００の内部ではなく、セラミックス部材１００のベース部材２００側（セラミックス部材１００と接着層３００との間）に配置されるとしてもよい。   In each of the above-described embodiments, the ceramic member 100 may be provided with a heater electrode formed of a resistive heating element formed of a conductive material (for example, tungsten or molybdenum). In such a configuration, when a voltage is applied to the heater electrode from the power supply, the heater electrode generates heat, whereby the ceramic member 100 is warmed, and the semiconductor wafer W held on the suction surface S1 of the ceramic member 100 is warmed. Thereby, temperature control of the semiconductor wafer W is realized. The heater electrode may be disposed not on the inside of the ceramic member 100 but on the side of the base member 200 of the ceramic member 100 (between the ceramic member 100 and the adhesive layer 300).

また、上記各実施形態では、冷媒流路２１０がベース部材２００の内部に形成されるとしているが、冷媒流路２１０が、ベース部材２００の内部ではなく、ベース部材２００の表面（例えばベース部材２００と接着層３００との間）に形成されるとしてもよい。   In each of the above embodiments, the coolant channel 210 is formed inside the base member 200, but the coolant channel 210 is not inside the base member 200, but the surface of the base member 200 (for example, the base member 200). And the adhesive layer 300).

また、上記実施形態において、セラミックス部材１００とベース部材２００とが、一体の接着層３００ではなく、複数の接合部分によって接合されているとしてもよい。具体的には、セラミックス部材１００とベース部材２００との間に、セラミックス部材１００とベース部材２００との対向方向に直交する一の仮想平面上に配置された複数の接合部分が離散的に形成されているとしてもよい。これらの複数の接合部分は、特許請求の範囲における接合部に相当する。また、上記各実施形態では、セラミックス部材１００とベース部材２００とが、接着層３００により接合されるとしているが、セラミックス部材１００とベース部材２００との接合方法として、他の方法（例えば、ろう付けや機械的接合等）が採用されてもよい。   In the above embodiment, the ceramic member 100 and the base member 200 may be joined not by the integral adhesive layer 300 but by a plurality of joint portions. Specifically, a plurality of bonding portions disposed on a virtual plane orthogonal to the opposing direction of ceramic member 100 and base member 200 are discretely formed between ceramic member 100 and base member 200. It may be The plurality of joints correspond to the joints in the claims. In each of the above embodiments, although the ceramic member 100 and the base member 200 are joined by the adhesive layer 300, another method (for example, brazing) may be used as a method of joining the ceramic member 100 and the base member 200. And mechanical bonding may be employed.

また、上記各実施形態では、セラミックス部材１００の内部に一対のチャック電極４００が設けられた双極方式が採用されているが、セラミックス部材１００の内部に１つのチャック電極４００が設けられた単極方式が採用されてもよい。また、上記各実施形態における各部材を形成する材料は、あくまで例示であり、各部材が他の材料により形成されてもよい。   In each of the above embodiments, the bipolar system in which the pair of chuck electrodes 400 is provided inside the ceramic member 100 is employed, but the single electrode system in which one chuck electrode 400 is provided inside the ceramic member 100. May be employed. Moreover, the material which forms each member in said each embodiment is an illustration to the last, and each member may be formed with another material.

また、上記各実施形態における静電チャック１０の製造方法はあくまで一例であり、種々変形可能である。   Moreover, the manufacturing method of the electrostatic chuck 10 in each said embodiment is an example to the last, and can be variously deformed.

また、本発明は、静電引力を利用して半導体ウェハＷを保持する静電チャック１０に限らず、セラミックス板とベース部材とを備え、セラミックス板の表面上に対象物を保持する他の保持装置（例えば、真空チャックやヒータ装置等）にも適用可能である。   Furthermore, the present invention is not limited to the electrostatic chuck 10 that holds the semiconductor wafer W using electrostatic attraction, and includes other members that include a ceramic plate and a base member, and hold an object on the surface of the ceramic plate. It is applicable also to an apparatus (for example, a vacuum chuck, a heater apparatus, etc.).

１０，１０Ｂ，１０Ｘ：静電チャック １００，１００Ａ，１００Ｂ：セラミックス部材 １０２：ガス噴出孔 １１０：ガス噴出流路 １１１：第１の縦流路 １１２：第２の縦流路 １１３：第１の開口部 １１４：横流路 １１６，１１６Ｂ：ガス中継流路 １１７，１１７Ｂ：第２の開口部 １１８，１１８Ｂ：第３の開口部 １３２：第１のセラミックス部 １３４：第２のセラミックス部 １３６：第１の凹所 １３７：上側開口部 １４０：収容室 １４０Ａ：凹所 １４２，１４２Ａ，１４２Ｂ，１４６Ｂ：側面 １３４Ｕ，１４４，１４４Ａ，１４４Ｂ：上面 １３４Ｄ，１４５：下面 １４５Ａ，１４７Ｂ：下側開口部 １４５Ｂ：底面 １６０，１６０Ａ：充填部材 １６２：側面 １６４：上面対向面 １６５：下面対向面 １６５Ａ：下面 ２００：ベース部材 ２１０：冷媒流路 ２２０：ガス供給流路 ２２１：ガス源接続孔 ２２２：ガス供給孔 ３００，３００Ａ：接着層 ３１０，３１０Ａ：貫通孔 ４００：チャック電極 Ｄ１：第１の最短距離 Ｄ２：第２の最短距離 Ｌ：中心線 Ｓ１：吸着面 Ｓ２，Ｓ２Ｂ：下面 Ｓ３：上面 Ｓ４：下面 Ｗ：半導体ウェハ 10, 10B, 10X: electrostatic chucks 100, 100A, 100B: ceramic member 102: gas ejection holes 110: gas ejection flow paths 111: first longitudinal flow path 112: second longitudinal flow path 113: first opening Part 114: Horizontal flow passage 116, 116B: Gas relay flow passage 117, 117B: Second opening 118, 118B: Third opening 132: First ceramic part 134: Second ceramic part 136: First The recess 137: upper opening 140: storage chamber 140A: recess 142, 142A, 142B, 146B: side surface 134U, 144, 144A, 144B: upper surface 134D, 145: lower surface 145A, 147B: lower opening 145B: bottom surface 160 , 160A: filling member 162: side surface 164: upper surface facing surface 165: lower surface facing surface 165A Lower surface 200: Base member 210: Refrigerant flow path 220: Gas supply flow path 221: Gas source connection hole 222: Gas supply hole 300, 300A: Adhesive layer 310, 310A: Through hole 400: Chuck electrode D1: First shortest Distance D2: Second shortest distance L: center line S1: adsorption surface S2, S2B: lower surface S3: upper surface S4: lower surface W: semiconductor wafer

Claims (5)

第１の方向に略直交する第１の表面と、前記第１の表面とは反対側の第２の表面と、を有し、前記第１の表面に開口する第１の流路が内部に形成されたセラミックス部材と、
第３の表面を有し、前記第３の表面が前記セラミックス部材の前記第２の表面に対向するように配置されたベース部材であって、前記第３の表面に開口する第２の流路が内部に形成された前記ベース部材と、
前記セラミックス部材の前記第２の表面と前記ベース部材の前記第３の表面との間に配置され、前記セラミックス部材と前記ベース部材とを接合する接合部と、
を備え、前記セラミックス部材の前記第１の表面上に対象物を保持する保持装置において、
前記接合部には、前記ベース部材の前記第２の流路に連通する貫通孔が形成されており、
前記セラミックス部材の内部には、前記第２の表面に開口するとともに前記貫通孔に連通する第３の流路が形成されており、
さらに、前記セラミックス部材の内部に配置され、前記第１の流路と前記第３の流路とに連通し、前記セラミックス部材より気孔率が高い多孔質部を備え、
前記第２の表面における前記第３の流路の開口部の開口面積は、前記多孔質部における前記第１の方向に直交する断面の面積より小さいことを特徴とする、保持装置。 A first flow path having a first surface substantially orthogonal to a first direction and a second surface opposite to the first surface, and having a first flow path opened in the first surface A formed ceramic member,
A base member having a third surface, wherein the third surface is disposed to face the second surface of the ceramic member, wherein the second flow passage is opened in the third surface. The base member having the inside formed therein,
A bonding portion disposed between the second surface of the ceramic member and the third surface of the base member and bonding the ceramic member and the base member;
A holding device for holding an object on the first surface of the ceramic member,
A through hole communicating with the second flow path of the base member is formed in the joint portion,
Inside the ceramic member, a third flow passage is formed which is open to the second surface and in communication with the through hole,
And a porous portion disposed inside the ceramic member, in communication with the first flow path and the third flow path, and having a higher porosity than the ceramic member.
An opening area of an opening of the third channel on the second surface is smaller than an area of a cross section orthogonal to the first direction in the porous portion. 請求項１に記載の保持装置において、
前記第１の方向視で、前記第１の流路における前記多孔質部側の開口部と前記第３の流路における前記多孔質部側の開口部との少なくとも一方は、前記第１の方向に直交する方向における前記多孔質部の中央寄りに位置していることを特徴とする、保持装置。 In the holding device according to claim 1,
In the first direction, at least one of the opening on the porous portion side in the first flow passage and the opening on the porous portion side in the third flow passage is the first direction. The holding device is characterized in that it is located near the center of the porous portion in the direction orthogonal to the direction. 請求項１または請求項２に記載の保持装置において、
前記多孔質部における前記第１の表面側の端部は、前記セラミックス部材を前記第１の方向に等分する中心線より前記第１の表面側に位置していることを特徴とする、保持装置。 In the holding device according to claim 1 or 2,
The end on the first surface side in the porous portion is positioned on the first surface side with respect to a center line that equally divides the ceramic member in the first direction. apparatus. 請求項３に記載の保持装置において、
前記セラミックス部材の前記第２の表面から前記多孔質部までの第２の最短距離は、前記第１の表面から前記多孔質部までの第１の最短距離より長いことを特徴とする、保持装置。 In the holding device according to claim 3,
A holding device characterized in that a second shortest distance from the second surface of the ceramic member to the porous portion is longer than a first shortest distance from the first surface to the porous portion. . 請求項１から請求項４までのいずれか一項に記載の保持装置において、
前記セラミックス部材は、前記第１の表面を有し、前記第１の流路が内部に形成された第１のセラミックス部材と、前記第２の表面の少なくとも一部を有し、前記第３の流路が形成された第２のセラミックス部材と、を含み、
前記多孔質部は、前記第１のセラミックス部材と前記第２のセラミックス部材との間に形成されるとともに前記第１の流路と前記第３の流路とに連通する空間内に配置されている、保持装置。 The holding device according to any one of claims 1 to 4.
The ceramic member has the first surface, and the first flow path includes a first ceramic member formed therein, and at least a portion of the second surface. A second ceramic member having a flow path formed therein;
The porous portion is formed between the first ceramic member and the second ceramic member and disposed in a space communicating with the first flow passage and the third flow passage. There is a holding device.
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