JP2019033116A - Semiconductor optical integrated element - Google Patents

Semiconductor optical integrated element Download PDF

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JP2019033116A
JP2019033116A JP2017151659A JP2017151659A JP2019033116A JP 2019033116 A JP2019033116 A JP 2019033116A JP 2017151659 A JP2017151659 A JP 2017151659A JP 2017151659 A JP2017151659 A JP 2017151659A JP 2019033116 A JP2019033116 A JP 2019033116A
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soa
dfb laser
modulator
semiconductor optical
control terminal
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慈 金澤
Shigeru Kanazawa
慈 金澤
小林　亘
Wataru Kobayashi
亘 小林
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Nippon Telegraph and Telephone Corp
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Abstract

To suppress influence due to the leakage of a modulation signal of an EA converter.SOLUTION: In a semiconductor optical integrated element in which a DFB laser, an EA modulator, and an SOA are monolithic-integrated on the same substrate, the DFB laser, the EA modulator, and the SOA are integrated to an optical waveguide direction in this order. In the DFB laser and the SOA, a current in accordance with a ratio of a length of the optical waveguide direction of the DFB laser and the SOA is implanted from the same control terminal, and a bypass capacitor is connected to both a current supply path from the control terminal to the DFB laser and the current supply path from the control terminal to the SOA.SELECTED DRAWING: Figure 4

Description

本発明は、半導体光集積素子に関し、より詳細には、半導体レーザと変調器と増幅器とがモノリシックに一体化された半導体光集積素子に関する。   The present invention relates to a semiconductor optical integrated device, and more particularly to a semiconductor optical integrated device in which a semiconductor laser, a modulator, and an amplifier are monolithically integrated.

分布帰還型（ＤＦＢ：Distributed FeedBack）レーザは、単一波長性に優れており、単一の基板上に電界吸収型（ＥＡ: Electroabsorption）変調器とモノリシックに一体化された半導体光集積素子が知られている。このような半導体光集積素子（ＥＡ−ＤＦＢレーザ）は、伝送距離４０ｋｍ以上の長距離伝送用の光送信モジュールとして用いられている。この光送信モジュールの信号光波長は、光ファイバの伝播損失が小さい１５５０ｎｍ帯が用いられるが、光ファイバに生じる波長分散の影響を受けにくい１３００ｎｍ帯も用いられ、１０Ｇｂ／ｓ以上の高速光信号を伝送する。   Distributed feedback (DFB) lasers have excellent single wavelength characteristics, and semiconductor optical integrated devices that are monolithically integrated with an electroabsorption (EA) modulator on a single substrate are known. It has been. Such a semiconductor optical integrated device (EA-DFB laser) is used as an optical transmission module for long-distance transmission having a transmission distance of 40 km or more. As the signal light wavelength of this optical transmission module, the 1550 nm band where the propagation loss of the optical fiber is small is used, but the 1300 nm band which is not easily affected by the chromatic dispersion generated in the optical fiber is also used. To transmit.

ＥＡ−ＤＦＢレーザにおいて高出力を得るためには、ＥＡ変調器に印加するＤＣバイアスの絶対値は小さいほうがよい一方、長距離伝送が可能な光波形を得るためには、ＤＣバイアスの絶対値は大きいほうがよいというトレードオフの関係がある。このトレードオフの関係を打ち消すために、非特許文献１では、ＥＡ変調器の出力端に半導体光増幅器（ＳＯＡ：Semiconductor Optical Amplifier）をさらに集積することが開示されている。非特許文献１によれば、ＥＡ変調器の出力端に集積されたＳＯＡに電流注入を行うことにより、ＥＡ変調器から出力された変調光のチャープ値が変換されて、長距離伝送を実現している。   In order to obtain a high output in the EA-DFB laser, the absolute value of the DC bias applied to the EA modulator should be small. On the other hand, in order to obtain an optical waveform capable of long-distance transmission, the absolute value of the DC bias is There is a trade-off relationship that a larger value is better. In order to cancel this trade-off relationship, Non-Patent Document 1 discloses that a semiconductor optical amplifier (SOA) is further integrated at the output end of the EA modulator. According to Non-Patent Document 1, the chirp value of the modulated light output from the EA modulator is converted by injecting current into the SOA integrated at the output terminal of the EA modulator, thereby realizing long-distance transmission. ing.

図１に、従来の半導体光集積素子の制御方法を示す。半導体光集積素子１００は、光導波方向に対して順に、ＤＦＢレーザ１０１、ＥＡ変調器１０２、およびＳＯＡ１０３を備えており、これらの構成要素は、単一の半導体基板上に、一体的にモノシリック積層されている（例えば、特許文献１参照）。ＤＦＢレーザ１０１とＳＯＡ１０３とは、同一の制御端子１０４から注入される電流値ＩOPによって制御される。このとき、ＤＦＢレーザ１０１への注入電流をＩDFBとし、ＳＯＡ１０３への注入電流をＩSOAとすると、電流値ＩOPは、
ＩOP＝ＩDFB＋ＩSOA
で与えられる。 FIG. 1 shows a conventional method for controlling a semiconductor optical integrated device. The semiconductor optical integrated device 100 includes a DFB laser 101, an EA modulator 102, and an SOA 103 in order with respect to the optical waveguide direction. These components are monolithically stacked on a single semiconductor substrate. (For example, refer to Patent Document 1). The DFB laser 101 and the SOA 103 are controlled by a current value I OP injected from the same control terminal 104. At this time, the current injected into the DFB laser 101 and I DFB, when the current injected into SOA103 and I SOA, the current value I OP is
I OP = I DFB + I SOA
Given in.

一般に、ＥＡ−ＤＦＢレーザを搭載した光送信モジュールで許容されるＩOPの値は６０〜８０ｍＡである。ＤＦＢレーザ１０１とＳＯＡ１０３の光導波方向の長さの比を調整することにより、所定の電流注入量ＩOPに対してＩDFBとＩSOAの割合を調整することができる。 Generally, the value of I OP allowed in an optical transmission module equipped with an EA-DFB laser is 60 to 80 mA. By adjusting the ratio of the length of the DFB laser 101 and the SOA 103 in the optical waveguide direction, the ratio of I DFB and I SOA can be adjusted with respect to a predetermined current injection amount I OP .

特許第５８２３９２０号Patent No. 5823920

Toshio Watanabe, 外３名, “Chirp Control of an Optical Signal Using Phase Modulation in a Semiconductor Optical Amplifier”, Photonics Technology Letters, １９９８年７月, vol.10, No.7, p.1027-1029.Toshio Watanabe, 3 others, “Chirp Control of an Optical Signal Using Phase Modulation in a Semiconductor Optical Amplifier”, Photonics Technology Letters, July 1998, vol.10, No.7, p.1027-1029.

しかしながら、同一の制御端子１０４からＤＦＢレーザ１０１とＳＯＡ１０３に電流を注入するので、ＤＦＢレーザ１０１の電極とＳＯＡ１０３の電極とが短絡されることになる。このため、モノシリック積層されているＤＦＢレーザ１０１とＥＡ変調器１０２の間の分離抵抗、およびＥＡ変調器１０２とＳＯＡ１０３との間の分離抵抗が、実効的に低下してしまい、ＥＡ変調器１０２に供給する変調信号が、ＤＦＢレーザ１０１とＳＯＡ１０３に漏洩するという問題があった。変調信号の漏洩は、ＥＡ変調器１０２の変調効率が劣化するとともに、ＤＦＢレーザ１０１とＳＯＡ１０３のそれぞれの出力光のパワーが変動してしまう。   However, since current is injected into the DFB laser 101 and the SOA 103 from the same control terminal 104, the electrode of the DFB laser 101 and the electrode of the SOA 103 are short-circuited. For this reason, the separation resistance between the monolithically stacked DFB laser 101 and the EA modulator 102 and the separation resistance between the EA modulator 102 and the SOA 103 are effectively reduced, and the EA modulator 102 is affected. There is a problem that the modulation signal to be supplied leaks to the DFB laser 101 and the SOA 103. The leakage of the modulation signal causes the modulation efficiency of the EA modulator 102 to deteriorate and the powers of the output lights of the DFB laser 101 and the SOA 103 to fluctuate.

本発明の目的は、ＥＡ変調器の変調信号の漏洩による影響を抑制することができる半導体光集積素子を提供することにある。   An object of the present invention is to provide a semiconductor optical integrated device capable of suppressing the influence of leakage of a modulation signal of an EA modulator.

本発明は、このような目的を達成するために、一実施態様は、ＤＦＢレーザと、ＥＡ変調器と、ＳＯＡとが同一の基板上にモノリシック集積された半導体光集積素子であって、光導波方向に対して、前記ＤＦＢレーザ、前記ＥＡ変調器、前記ＳＯＡの順に集積され、前記ＤＦＢレーザおよび前記ＳＯＡは、同一の制御端子から、前記ＤＦＢレーザと前記ＳＯＡの光導波方向についての長さの比に応じた電流が注入され、前記制御端子から前記ＤＦＢレーザに至る電流供給経路と、前記制御端子から前記ＳＯＡに至る電流供給経路のそれぞれにバイパスコンデンサが接続されていることを特徴とする。   In order to achieve such an object, the present invention provides a semiconductor optical integrated device in which a DFB laser, an EA modulator, and an SOA are monolithically integrated on the same substrate. The DFB laser, the EA modulator, and the SOA are integrated in this order with respect to the direction, and the DFB laser and the SOA have a length in the optical waveguide direction of the DFB laser and the SOA from the same control terminal. A current according to the ratio is injected, and a bypass capacitor is connected to each of a current supply path from the control terminal to the DFB laser and a current supply path from the control terminal to the SOA.

本発明によれば、ＥＡ変調器に供給された変調信号の漏洩を、バイパスコンデンサによってバイパスすることにより、その影響を抑制することができる。   According to the present invention, the influence of the modulation signal supplied to the EA modulator can be suppressed by bypassing the leakage with the bypass capacitor.

従来の半導体光集積素子の制御方法を説明するための図である。It is a figure for demonstrating the control method of the conventional semiconductor optical integrated element. 本発明の一実施形態にかかる半導体光集積素子を示す断面図である。It is sectional drawing which shows the semiconductor optical integrated element concerning one Embodiment of this invention. 半導体光集積素子に電源を供給する方法を示す図である。It is a figure which shows the method of supplying a power supply to a semiconductor optical integrated element. 本発明の第１の実施形態にかかる半導体光集積素子への電源供給方法を示す図である。It is a figure which shows the power supply method to the semiconductor optical integrated device concerning the 1st Embodiment of this invention. 本発明の第２の実施形態にかかる半導体光集積素子への電源供給方法を示す図である。It is a figure which shows the power supply method to the semiconductor optical integrated device concerning the 2nd Embodiment of this invention.

以下、図面を参照しながら本発明の実施形態について詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図２に、本発明の一実施形態にかかる半導体光集積素子を示す。半導体光集積素子２００は、光導波方向に対して順に、ＤＦＢレーザ２０１、ＥＡ変調器２０２、およびＳＯＡ２０３がモノリシックに集積されており、これらの構成要素は、ｎ−ＩｎＰ基板２１１上のｎ−ＩｎＰクラッド層２１２の上に形成されている。   FIG. 2 shows a semiconductor optical integrated device according to an embodiment of the present invention. In the semiconductor optical integrated device 200, the DFB laser 201, the EA modulator 202, and the SOA 203 are monolithically integrated in order with respect to the optical waveguide direction, and these components are n-InP on the n-InP substrate 211. It is formed on the cladding layer 212.

ＤＦＢレーザ２０１は、クラッド層２１２の上に活性層２１３と、回折格子２１５が形成されたガイド層２１４とを備え、ＤＦＢレーザ部の中心部分には、発振波長の単一モードを実現するために、回折格子を四分の一波長だけ位相シフトした四分の一波長位相シフト２１６が設けられている。   The DFB laser 201 includes an active layer 213 and a guide layer 214 in which a diffraction grating 215 is formed on a clad layer 212. In order to realize a single mode of an oscillation wavelength in the central portion of the DFB laser portion. A quarter-wave phase shift 216 is provided by phase shifting the diffraction grating by a quarter wavelength.

ＥＡ変調器２０２は、クラッド層２１２の上に吸収層２１７を備え、ＳＯＡ２０３は、クラッド層２１２の上に活性層２１８およびガイド層２１９を備える。ＳＯＡ２０３の活性層およびガイド層は、ＤＦＢレーザ２０１の活性層およびガイド層と同じ層構造とすることもできる。   The EA modulator 202 includes an absorption layer 217 on the cladding layer 212, and the SOA 203 includes an active layer 218 and a guide layer 219 on the cladding layer 212. The active layer and the guide layer of the SOA 203 may have the same layer structure as the active layer and the guide layer of the DFB laser 201.

これらの構成要素の上には、さらにｐ−ＩｎＰクラッド層２２０が形成され、その上にＤＦＢレーザ電極２２１、ＥＡ変調器電極２２２、ＳＯＡ電極２２３のそれぞれが形成されている。また、基板２１１に下面には、ｎ電極２２４が形成されている。   A p-InP cladding layer 220 is further formed on these components, and a DFB laser electrode 221, an EA modulator electrode 222, and an SOA electrode 223 are formed thereon. An n-electrode 224 is formed on the lower surface of the substrate 211.

このような構成により、同一の電流源２３１からＤＦＢレーザ２０１とＳＯＡ２０３に電流ＩOPが供給される。ここで、ＤＦＢレーザ２０１とＳＯＡ２０３の光導波方向の長さの比（ＤＦＢレーザ電極２２１とＳＯＡ電極２２３の光導波方向の長さの比に同じ）が調整されており、同一の制御端子から供給される電流ＩOPが、ＤＦＢレーザ２０１への電流ＩDFBと、ＳＯＡ２０３への電流ＩSOAとして分流されて供給される。 With such a configuration, the current I OP is supplied from the same current source 231 to the DFB laser 201 and the SOA 203. Here, the ratio of the length of the DFB laser 201 and the SOA 203 in the optical waveguide direction (the same as the ratio of the length of the DFB laser electrode 221 and the SOA electrode 223 in the optical waveguide direction) is adjusted and supplied from the same control terminal. The current I OP is divided and supplied as a current I DFB to the DFB laser 201 and a current I SOA to the SOA 203.

ＥＡ変調器２０３には、バイアスＴを介して、直流電圧源２３３からのバイアス電圧Ｖbiasに、高周波（ＲＦ）信号源２３２からのＲＦ信号電圧ＶRFが重畳されて、ＥＡ変調器電極２２２に印加される。 The RF signal voltage V RF from the radio frequency (RF) signal source 232 is superimposed on the bias voltage V bias from the DC voltage source 233 via the bias T, and the EA modulator 203 is superimposed on the EA modulator electrode 222. Applied.

図３に、半導体光集積素子に電源を供給する方法を示す。従来、図３（ａ）に示したように、半導体光集積素子２００が実装された光送信モジュールには、高周波配線基板３０１が配置されている。高周波配線基板３０１には、ＤＦＢレーザ電極２２１とＳＯＡ電極２２３に電流を供給する配線３０２と、ＥＡ変調器電極２２２に電圧を供給する高周波配線３０３とが形成され、半導体光集積素子２００の各々の電極と配線との間を、ボンディング・ワイヤで接続している。   FIG. 3 shows a method for supplying power to the semiconductor optical integrated device. Conventionally, as shown in FIG. 3A, a high-frequency wiring board 301 is disposed in an optical transmission module on which a semiconductor optical integrated device 200 is mounted. The high frequency wiring substrate 301 is formed with a wiring 302 for supplying current to the DFB laser electrode 221 and the SOA electrode 223 and a high frequency wiring 303 for supplying voltage to the EA modulator electrode 222. The electrode and the wiring are connected by a bonding wire.

図３（ｂ）は、このような構成にかかる等価回路である。モノシリック積層されているＤＦＢレーザ２０１とＥＡ変調器２０２の間には分離抵抗Ｒ１が存在し、ＥＡ変調器２０２とＳＯＡ２０３との間には分離抵抗Ｒ２が存在する。ＤＦＢレーザ電極２２１とＳＯＡ電極２２３とが短絡されると、分離抵抗Ｒ１，Ｒ２が実効的に低下し、ＥＡ変調器２０２に供給する変調信号が、分離抵抗Ｒ１，Ｒ２を介してＤＦＢレーザ２０１とＳＯＡ２０３に漏洩する。   FIG. 3B is an equivalent circuit according to such a configuration. A separation resistor R1 exists between the monolithically stacked DFB laser 201 and the EA modulator 202, and a separation resistor R2 exists between the EA modulator 202 and the SOA 203. When the DFB laser electrode 221 and the SOA electrode 223 are short-circuited, the separation resistors R1 and R2 are effectively reduced, and the modulation signal supplied to the EA modulator 202 is connected to the DFB laser 201 via the separation resistors R1 and R2. It leaks into the SOA 203.

図４に、本発明の第１の実施形態にかかる半導体光集積素子への電源供給方法を示す。ＥＡ変調器２０２に供給する変調信号の漏洩を、バイパスコンデンサＣ１，Ｃ２で阻止す。図４（ａ）に示したように、高周波配線基板４０１上の配線４０２とＤＦＢレーザ電極２２１との間にコンデンサＣ１、配線４０２とＳＯＡ電極２２３との間にコンデンサＣ２を実装する。すなわち、図４（ｂ）に示したように、同一の制御端子ＡからＤＦＢレーザ電極２２１に至る経路と、制御端子ＡからＳＯＡ電極２２３に至る経路のそれぞれにコンデンサを接続する。   FIG. 4 shows a method of supplying power to the semiconductor optical integrated device according to the first embodiment of the present invention. Leakage of the modulation signal supplied to the EA modulator 202 is blocked by the bypass capacitors C1 and C2. As shown in FIG. 4A, a capacitor C1 is mounted between the wiring 402 on the high-frequency wiring board 401 and the DFB laser electrode 221, and a capacitor C2 is mounted between the wiring 402 and the SOA electrode 223. That is, as shown in FIG. 4B, a capacitor is connected to each of a path from the same control terminal A to the DFB laser electrode 221 and a path from the control terminal A to the SOA electrode 223.

ＥＡ変調器２０２の変調速度を１０Ｇｂ／ｓ以上（５ＧＨｚ以上）とすると、ＤＦＢレーザ２０１の抵抗分は５Ω程度となる。そこで、コンデンサＣ１，Ｃ２として、５ＧＨｚ以上で０．５Ω以下の抵抗分となるように数十ｐＦ以上の容量を挿入する。このような構成により、ＥＡ変調器２０２に供給された変調信号のうち、分離抵抗Ｒ１，Ｒ２を介して漏洩した信号は、コンデンサＣ１，Ｃ２によりバイパスされるので、変調信号の漏洩による影響を抑制することができる。   When the modulation speed of the EA modulator 202 is 10 Gb / s or higher (5 GHz or higher), the resistance of the DFB laser 201 is about 5Ω. Therefore, capacitors of several tens of pF or more are inserted as capacitors C1 and C2 so as to have a resistance of 0.5 GHz or less at 5 GHz or more. With such a configuration, of the modulation signal supplied to the EA modulator 202, the signal leaked through the separation resistors R1 and R2 is bypassed by the capacitors C1 and C2, so that the influence due to the leakage of the modulation signal is suppressed. can do.

図５に、本発明の第２の実施形態にかかる半導体光集積素子への電源供給方法を示す。第１の実施形態は、例えば、高周波配線基板４０１上にチップコンデンサを実装する形態を示したが、第２の実施形態では、半導体光集積素子５００に、コンデンサＣ１１，Ｃ１２を内挿する。例えば、ＤＦＢレーザ２０１とＳＯＡ２０３のそれぞれに隣接する領域に、図２に示した半導体光集積素子２００のクラッド層２２０上の電極と、基板２１１の下面の電極とを設け、高誘電率の誘電体材料等を挟持することにより、コンデンサを形成することができる。   FIG. 5 shows a method of supplying power to the semiconductor optical integrated device according to the second embodiment of the present invention. In the first embodiment, for example, a chip capacitor is mounted on the high-frequency wiring board 401. In the second embodiment, capacitors C11 and C12 are inserted into the semiconductor optical integrated device 500. For example, in the regions adjacent to the DFB laser 201 and the SOA 203, an electrode on the cladding layer 220 of the semiconductor optical integrated device 200 shown in FIG. A capacitor can be formed by sandwiching a material or the like.

１０１，２０１ ＤＦＢレーザ
１０２，２０２ ＥＡ変調器
１０３，２０３ ＳＯＡ
２００，５００ 半導体光集積素子
２１１ 基板
２１２，２２０ クラッド層
２１３，２１８ 活性層
２１４，２１９ ガイド層
２１５ 回折格子
２１６ 四分の一波長位相シフト
２１７ 吸収層
２２１ ＤＦＢレーザ電極
２２２ ＥＡ変調器電極
２２３ ＳＯＡ電極
２３１ 電流源
２３２ ＲＦ信号源
２３３ 直流電圧源
３０１，４０１ 高周波配線基板
３０２，４０２ 配線
３０３，４０３ 高周波配線 101, 201 DFB laser 102, 202 EA modulator 103, 203 SOA
200,500 Semiconductor optical integrated device 211 Substrate 212,220 Clad layer 213,218 Active layer 214,219 Guide layer 215 Diffraction grating 216 Quarter wavelength phase shift 217 Absorbing layer 221 DFB laser electrode 222 EA modulator electrode 223 SOA electrode 231 Current source 232 RF signal source 233 DC voltage source 301, 401 High frequency wiring board 302, 402 Wiring 303, 403 High frequency wiring

Claims (2)

ＤＦＢレーザと、ＥＡ変調器と、ＳＯＡとが同一の基板上にモノリシック集積された半導体光集積素子であって、
光導波方向に対して、前記ＤＦＢレーザ、前記ＥＡ変調器、前記ＳＯＡの順に集積され、前記ＤＦＢレーザおよび前記ＳＯＡは、同一の制御端子から、前記ＤＦＢレーザと前記ＳＯＡの光導波方向についての長さの比に応じた電流が注入され、
前記制御端子から前記ＤＦＢレーザに至る電流供給経路と、前記制御端子から前記ＳＯＡに至る電流供給経路のそれぞれにバイパスコンデンサが接続されていることを特徴とする半導体光集積素子。 A semiconductor optical integrated device in which a DFB laser, an EA modulator, and an SOA are monolithically integrated on the same substrate,
The DFB laser, the EA modulator, and the SOA are integrated in this order with respect to the optical waveguide direction. The DFB laser and the SOA are long from the same control terminal in the optical waveguide direction of the DFB laser and the SOA. A current according to the ratio is injected,
A semiconductor optical integrated device, wherein a bypass capacitor is connected to each of a current supply path from the control terminal to the DFB laser and a current supply path from the control terminal to the SOA. 前記バイパスコンデンサは、前記基板上の前記ＤＦＢレーザに隣接する領域と、前記ＳＯＡに隣接する領域とに形成されていることを特徴とする請求項１に記載の半導体光集積素子。   2. The semiconductor optical integrated device according to claim 1, wherein the bypass capacitor is formed in a region adjacent to the DFB laser on the substrate and a region adjacent to the SOA.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023153518A1 (en) * 2022-02-14 2023-08-17 日本電信電話株式会社 Optical transmitter
JP7466773B1 (en) 2022-12-23 2024-04-12 三菱電機株式会社 Optical Modules

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103687A (en) * 1983-11-11 1985-06-07 Hitachi Ltd Semiconductor laser element
JPH06120530A (en) * 1992-10-02 1994-04-28 Sumitomo Electric Ind Ltd Mounting system of semiconductor optical amplifier
JP2002329937A (en) * 2001-05-07 2002-11-15 Mitsubishi Electric Corp Semiconductor device and manufacturing method therefor
JP2003229636A (en) * 2002-02-06 2003-08-15 Hitachi Ltd Semiconductor laser element and semiconductor laser device
JP2004296539A (en) * 2003-03-25 2004-10-21 Sumitomo Electric Ind Ltd Semiconductor laser element and semiconductor optical integrated element
US20050006654A1 (en) * 2003-07-08 2005-01-13 Byung-Kwon Kang Semiconductor monolithic integrated optical transmitter
JP2007286454A (en) * 2006-04-19 2007-11-01 Opnext Japan Inc Substrate mounted with optical semiconductor device, and optical transmission module
JP2013258336A (en) * 2012-06-13 2013-12-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor optical integrated element

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103687A (en) * 1983-11-11 1985-06-07 Hitachi Ltd Semiconductor laser element
JPH06120530A (en) * 1992-10-02 1994-04-28 Sumitomo Electric Ind Ltd Mounting system of semiconductor optical amplifier
JP2002329937A (en) * 2001-05-07 2002-11-15 Mitsubishi Electric Corp Semiconductor device and manufacturing method therefor
JP2003229636A (en) * 2002-02-06 2003-08-15 Hitachi Ltd Semiconductor laser element and semiconductor laser device
JP2004296539A (en) * 2003-03-25 2004-10-21 Sumitomo Electric Ind Ltd Semiconductor laser element and semiconductor optical integrated element
US20050006654A1 (en) * 2003-07-08 2005-01-13 Byung-Kwon Kang Semiconductor monolithic integrated optical transmitter
JP2007286454A (en) * 2006-04-19 2007-11-01 Opnext Japan Inc Substrate mounted with optical semiconductor device, and optical transmission module
JP2013258336A (en) * 2012-06-13 2013-12-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor optical integrated element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023153518A1 (en) * 2022-02-14 2023-08-17 日本電信電話株式会社 Optical transmitter
JP7466773B1 (en) 2022-12-23 2024-04-12 三菱電機株式会社 Optical Modules
WO2024134864A1 (en) * 2022-12-23 2024-06-27 三菱電機株式会社 Optical module

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