JP2019026511A - Ceramic joined body and method for producing ceramic joined body - Google Patents

Ceramic joined body and method for producing ceramic joined body Download PDF

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JP2019026511A
JP2019026511A JP2017147878A JP2017147878A JP2019026511A JP 2019026511 A JP2019026511 A JP 2019026511A JP 2017147878 A JP2017147878 A JP 2017147878A JP 2017147878 A JP2017147878 A JP 2017147878A JP 2019026511 A JP2019026511 A JP 2019026511A
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ceramic member
ceramic
joint
aln
bonding
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JP6867907B2 (en
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元樹 堀田
Genki Hotta
元樹 堀田
丹下　秀夫
Hideo Tange
秀夫 丹下
耕平 三矢
Kohei Mitsuya
耕平 三矢
貴道 小川
Takamichi Ogawa
貴道 小川
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Niterra Co Ltd
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NGK Spark Plug Co Ltd
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Abstract

To suppress the reduction of bonding strength between a first ceramic member and a second ceramic member and the development of microcracks.SOLUTION: There is provided a ceramic joined body which comprises a first ceramic member formed of a material mainly composed of AlN, a second ceramic member formed of a material mainly composed of AlN and a joint part which is disposed between the first ceramic member and the second ceramic member and joins the first ceramic member and the second ceramic member. The joint part is exposed to the outside, is in contact with both of the first ceramic member and the second ceramic member and includes a first joint part formed of a material mainly composed of AlN and a second joint part formed of a material mainly composed of a composite oxide containing Al.SELECTED DRAWING: Figure 3

Description

本明細書に開示される技術は、セラミックス接合体に関する。   The technology disclosed in this specification relates to a ceramic joined body.

半導体製造装置用部品として、サセプタ（加熱装置）が用いられる。サセプタは、例えば、内部にヒータを有する板状のセラミックス製の保持部材と、保持部材の一方の面側に配置される円筒状のセラミックス製の支持部材と、保持部材と支持部材との間に配置され、保持部材の一方の面と支持部材の一方の面とを接合する接合部とを備える。保持部材の一方の面とは反対側の保持面にウェハが配置される。サセプタは、ヒータに電圧が印加されることにより発生する熱を利用して、保持面に配置されたウェハを加熱する。   A susceptor (heating device) is used as a component for semiconductor manufacturing equipment. The susceptor includes, for example, a plate-shaped ceramic holding member having a heater therein, a cylindrical ceramic supporting member disposed on one surface side of the holding member, and the holding member and the supporting member. It is arrange | positioned and is provided with the junction part which joins one side of a holding member, and one side of a supporting member. The wafer is disposed on the holding surface opposite to the one surface of the holding member. The susceptor heats the wafer disposed on the holding surface using heat generated by applying a voltage to the heater.

このようなサセプタの中には、保持部材と支持部材とが、比較的に熱伝導率が高いＡｌＮ（窒化アルミニウム）を主成分とする材料により形成されたものがある。また、このようなサセプタは、使用時に、熱サイクルにさらされる。セラミックス部材（保持部材、支持部材）の熱膨張率と接合部の熱膨張率とが互いに異なる場合（例えば、接合部全体が、Ａｌを含む複合酸化物を主成分とする材料により形成された場合）、サセプタが熱サイクルにさらされると、セラミックス部材と接合部との間に熱膨張差が生じ、例えば接合部にマイクロクラックが発生するおそれがある。マイクロクラックが発生すると、セラミックス部材同士の接合強度が低下したり、セラミックス部材同士の間の気密性が低下したりするおそれがある。従来、ＡｌＮ粉末を含む接合剤を熱処理することにより、接合部のセラミックス部材側の表面にＡｌＮを析出させ、その析出したＡｌＮを介して接合部とセラミックス部材とを接合する技術が知られている（例えば特許文献１，２参照）。   Among such susceptors, there is a susceptor in which a holding member and a support member are formed of a material mainly composed of AlN (aluminum nitride) having a relatively high thermal conductivity. Such susceptors are also subject to thermal cycling during use. When the thermal expansion coefficient of the ceramic member (holding member, support member) and the thermal expansion coefficient of the joint are different from each other (for example, when the entire joint is formed of a material mainly composed of a complex oxide containing Al) ), When the susceptor is exposed to a thermal cycle, a difference in thermal expansion occurs between the ceramic member and the joint, and for example, microcracks may occur in the joint. If microcracks occur, the bonding strength between the ceramic members may decrease, or the airtightness between the ceramic members may decrease. Conventionally, a technique is known in which AlN is deposited on the surface of a ceramic member side of a joint by heat-treating a bonding agent containing AlN powder, and the joint and the ceramic member are joined through the deposited AlN. (For example, refer to Patent Documents 1 and 2).

特開２００４−３３１４９７号公報JP 2004-331497 A

しかし、上述の従来の技術では、接合部から析出したＡｌＮと各セラミックス部材との間に空隙ができやすく、接合強度が低下するおそれがあった。   However, in the above-described conventional technique, there is a possibility that a gap is easily formed between the AlN deposited from the joint and each ceramic member, and the joint strength may be reduced.

なお、このような課題は、サセプタを構成する保持部材と支持部材との接合体に限らず、例えば静電チャック等の保持装置を構成するセラミックス部材同士の接合体にも共通の課題である。また、このような課題は、保持装置に限らず、例えばシャワーヘッド等の半導体製造装置用部品を構成するセラミックス部材同士の接合体に共通の課題である。   Such a problem is not limited to the joined body of the holding member and the support member constituting the susceptor, but is also a common problem for the joined body of ceramic members constituting the holding device such as an electrostatic chuck. In addition, such a problem is not limited to the holding device, and is a problem common to a joined body of ceramic members constituting a part for a semiconductor manufacturing apparatus such as a shower head.

本明細書では、上述した課題を解決することが可能な技術を開示する。   In this specification, the technique which can solve the subject mentioned above is disclosed.

本明細書に開示される技術は、例えば、以下の形態として実現することが可能である。   The technology disclosed in the present specification can be realized as, for example, the following forms.

（１）本明細書に開示されるセラミックス接合体は、ＡｌＮを主成分とする材料により形成された第１のセラミックス部材と、ＡｌＮを主成分とする材料により形成された第２のセラミックス部材と、前記第１のセラミックス部材と前記第２のセラミックス部材との間に配置され、前記第１のセラミックス部材と前記第２のセラミックス部材とを接合する接合部と、を備えるセラミックス接合体において、前記接合部は、外部に露出し、かつ、前記第１のセラミックス部材と前記第２のセラミックス部材との両方に接触し、ＡｌＮを主成分とする材料により形成された第１の接合部と、Ａｌを含む複合酸化物を主成分とする材料により形成された第２の接合部と、を含むことを特徴とする。本セラミックス接合体によれば、接合部は、第１の接合部と第２の接合部とを含む。第１の接合部は、接合部の外部に露出し、かつ、第１のセラミックス部材と第２のセラミックス部材との両方に接触し、ＡｌＮを主成分とする材料により形成されている。これにより、接合部が、Ａｌを含む複合酸化物を主成分とする材料により形成された接合部を含む場合であっても、第１のセラミックス部材と第２のセラミックス部材とが、これらの部材と同じようにＡｌＮを主成分とする第１の接合部を介して一体的に接合される。これにより、第１のセラミックス部材と第２のセラミックス部材との接合強度の低下およびマイクロクラックの進展を抑制することができる。 (1) A ceramic joined body disclosed in the present specification includes a first ceramic member formed of a material mainly containing AlN, and a second ceramic member formed of a material mainly containing AlN. In the ceramic joined body, comprising: a joint portion disposed between the first ceramic member and the second ceramic member, and joining the first ceramic member and the second ceramic member. The joint is exposed to the outside and is in contact with both the first ceramic member and the second ceramic member, and is formed of a material mainly composed of AlN, Al And a second bonding portion formed of a material containing a composite oxide containing as a main component. According to the ceramic joined body, the joint includes the first joint and the second joint. The first bonding portion is exposed to the outside of the bonding portion, is in contact with both the first ceramic member and the second ceramic member, and is formed of a material mainly composed of AlN. As a result, even when the joint includes a joint formed of a material mainly composed of Al-containing composite oxide, the first ceramic member and the second ceramic member are formed of these members. In the same manner as described above, they are integrally bonded through the first bonding portion mainly composed of AlN. Thereby, the fall of the joint strength of a 1st ceramic member and a 2nd ceramic member and progress of a microcrack can be suppressed.

（２）上記セラミックス接合体において、前記第１の接合部は、前記接合部の全周にわたって形成されていることを特徴とする構成としてもよい。本セラミックス接合体によれば、接合部の全周にわたって、第１のセラミックス部材と第２のセラミックス部材とが、これらの部材と同じようにＡｌＮを主成分とする第１の接合部を介して一体的に接合される構成としてもよい。これにより、仮に接合部の内部でマイクロクラックが発生したとしても、そのマイクロクラックが接合部の外周面に至ることを抑制することができる。 (2) In the ceramic joined body, the first joint portion may be formed over the entire circumference of the joint portion. According to the present ceramic joined body, the first ceramic member and the second ceramic member are passed through the first joining portion mainly composed of AlN like these members over the entire circumference of the joining portion. It is good also as a structure joined integrally. Thereby, even if a microcrack occurs inside the joint, the microcrack can be prevented from reaching the outer peripheral surface of the joint.

（３）上記セラミックス接合体において、前記第２の接合部は、前記接合部の内部に位置し、かつ、前記第１のセラミックス部材と前記第２のセラミックス部材との両方に接触し、ＡｌＮの含有量が前記第１の接合部のＡｌＮの含有量より少ないことを特徴とする構成としてもよい。本セラミックス接合体によれば、接合部のうち、第１の接合部以外の部分（第２の接合部）において、ＡｌＮ同士の間に空隙が形成されることを原因とする第１のセラミックス部材と第２のセラミックス部材との接合強度の低下を抑制することができる。 (3) In the ceramic joined body, the second joint portion is located inside the joint portion, contacts both the first ceramic member and the second ceramic member, and is made of AlN. It is good also as a structure characterized by content being less than content of AlN of a said 1st junction part. According to this ceramic joined body, the first ceramic member caused by the formation of a gap between AlNs in the joined portion other than the first joined portion (second joined portion). And a decrease in bonding strength between the second ceramic member and the second ceramic member can be suppressed.

（４）上記セラミックス接合体において、前記第１のセラミックス部材には、前記接合部を介して前記第１のセラミックス部材と前記第２のセラミックス部材とが対向する第１の方向に貫通する貫通孔が形成されており、前記第１の接合部は、前記第１のセラミックス部材の内周側に位置する内周側接合部と、前記第１のセラミックス部材の外周側に位置し、前記貫通孔の径方向の寸法が前記内周側接合部の前記径方向の寸法に比べて大きい外周側接合部とを含むことを特徴とする構成としてもよい。本セラミックス接合体によれば、第１の接合部は、第１のセラミックス部材の内周側に位置する内周側接合部と、第１のセラミックス部材の外周側に位置し、内周側接合部に比べて、貫通孔の径方向の寸法が大きい外周側接合部とを含む構成としてもよい。これにより、特に熱膨張による膨張量が大きい第１のセラミックス部材の外周側において、第１のセラミックス部材と第２のセラミックス部材との接合強度の低下をより確実に抑制することができる。 (4) In the ceramic joined body, the first ceramic member has a through-hole penetrating in a first direction in which the first ceramic member and the second ceramic member are opposed to each other through the joint portion. And the first joint is located on the inner peripheral side of the first ceramic member and on the outer peripheral side of the first ceramic member, and the through hole It is good also as a structure characterized by including the outer peripheral side junction part whose dimension of radial direction of this is large compared with the dimension of the said radial direction of the said inner peripheral side junction part. According to the ceramic joined body, the first joining portion is located on the inner peripheral side of the first ceramic member and on the outer peripheral side of the first ceramic member, and is joined on the inner peripheral side. It is good also as a structure containing the outer peripheral side junction part with a large dimension of the radial direction of a through-hole compared with a part. Thereby, especially in the outer peripheral side of the 1st ceramic member with the large expansion | swelling amount by thermal expansion, the fall of the joint strength of a 1st ceramic member and a 2nd ceramic member can be suppressed more reliably.

（５）本明細書に開示されるセラミックス接合体の製造方法は、ＡｌＮを主成分とする材料により形成された第１のセラミックス部材と、ＡｌＮを主成分とする材料により形成された第２のセラミックス部材とを準備する工程と、前記第１のセラミックス部材と前記第２のセラミックス部材との間に、Ａｌを含む複合酸化物を主成分とする接合剤を介在させた中間体を、窒素雰囲気で、１６５０（℃）以上、１７５０（℃）以下の温度で、１時間以内、加熱することにより、前記第１のセラミックス部材と前記第２のセラミックス部材とを接合する接合部であって、前記接合部の外部に露出し、かつ、前記第１のセラミックス部材と前記第２のセラミックス部材との両方に接触し、ＡｌＮを主成分とする材料により形成された第１の接合部と、Ａｌを含む複合酸化物を主成分とする材料により形成された第２の接合部と、を含む前記接合部を形成する工程とを含むことを特徴とする。 (5) A method for manufacturing a ceramic joined body disclosed in the present specification includes a first ceramic member formed of a material mainly containing AlN and a second ceramic member formed of a material mainly containing AlN. A step of preparing a ceramic member, and an intermediate in which a bonding agent mainly composed of a composite oxide containing Al is interposed between the first ceramic member and the second ceramic member in a nitrogen atmosphere The first ceramic member and the second ceramic member are joined to each other by heating at a temperature of 1650 (° C.) or more and 1750 (° C.) or less for 1 hour, A first joint that is exposed to the outside of the joint and is in contact with both the first ceramic member and the second ceramic member and is formed of a material mainly composed of AlN; Characterized in that it comprises a step of forming the joint includes a second joint portion which is formed of a material mainly containing a composite oxide containing Al, a.

なお、本明細書に開示される技術は、種々の形態で実現することが可能であり、例えば、静電チャック、真空チャック等の保持装置、サセプタ等の加熱装置、シャワーヘッド等の半導体製造装置用部品、それらの製造方法の形態で実現することが可能である。   The technology disclosed in the present specification can be realized in various forms. For example, a holding device such as an electrostatic chuck or a vacuum chuck, a heating device such as a susceptor, or a semiconductor manufacturing device such as a shower head. It can be realized in the form of parts for manufacturing and their manufacturing method.

本実施形態におけるサセプタ１００の外観構成を概略的に示す斜視図である。It is a perspective view which shows roughly the external appearance structure of the susceptor 100 in this embodiment. 本実施形態におけるサセプタ１００のＸＺ断面構成を概略的に示す説明図である。It is explanatory drawing which shows roughly the XZ cross-sectional structure of the susceptor 100 in this embodiment. 図２のサセプタ１００におけるＸ１部分のＸＺ断面構成を概略的に示す説明図である。It is explanatory drawing which shows roughly the XZ cross-section structure of the X1 part in the susceptor 100 of FIG. 本実施形態におけるサセプタ１００の製造方法を示すフローチャートである。It is a flowchart which shows the manufacturing method of the susceptor 100 in this embodiment.

Ａ．実施形態：
Ａ−１．サセプタ１００の構成：
図１は、本実施形態におけるサセプタ１００の外観構成を概略的に示す斜視図であり、図２は、本実施形態におけるサセプタ１００のＸＺ断面構成を概略的に示す説明図である。各図には、方向を特定するための互いに直交するＸＹＺ軸が示されている。本明細書では、便宜的に、Ｚ軸正方向を上方向といい、Ｚ軸負方向を下方向というものとするが、サセプタ１００は実際にはそのような向きとは異なる向きで設置されてもよい。サセプタ１００は、特許請求の範囲におけるセラミックス接合体に相当し、上下方向は、特許請求の範囲における第１の方向に相当する。 A. Embodiment:
A-1. Structure of susceptor 100:
FIG. 1 is a perspective view schematically showing an external configuration of a susceptor 100 in the present embodiment, and FIG. 2 is an explanatory diagram schematically showing an XZ cross-sectional configuration of the susceptor 100 in the present embodiment. In each figure, XYZ axes orthogonal to each other for specifying the direction are shown. In this specification, for convenience, the positive direction of the Z-axis is referred to as the upward direction, and the negative direction of the Z-axis is referred to as the downward direction. However, the susceptor 100 is actually installed in a different direction. Also good. The susceptor 100 corresponds to the ceramic joined body in the claims, and the vertical direction corresponds to the first direction in the claims.

サセプタ１００は、対象物（例えばウェハＷ）を保持しつつ所定の処理温度に加熱する装置であり、例えば半導体装置の製造工程で使用される薄膜形成装置（例えばＣＶＤ装置やスパッタリング装置）やエッチング装置（例えばプラズマエッチング装置）に備えられている。サセプタ１００は、所定の配列方向（本実施形態では上下方向（Ｚ軸方向））に並べて配置された保持部材１０および支持部材２０を備える。保持部材１０と支持部材２０とは、保持部材１０の下面（以下、「保持側接合面Ｓ２」という）と支持部材２０の上面（以下、「支持側接合面Ｓ３」という）とが上記配列方向に対向するように配置されている。サセプタ１００は、さらに、保持部材１０の保持側接合面Ｓ２と支持部材２０の支持側接合面Ｓ３との間に配置された接合層３０を備える。保持部材１０は、特許請求の範囲における第２のセラミックス部材に相当し、支持部材２０は、特許請求の範囲における第１のセラミックス部材に相当し、接合層３０は、特許請求の範囲における接合部に相当する。   The susceptor 100 is an apparatus that holds an object (for example, a wafer W) and heats it to a predetermined processing temperature. For example, a thin film forming apparatus (for example, a CVD apparatus or a sputtering apparatus) or an etching apparatus that is used in a semiconductor device manufacturing process. (For example, a plasma etching apparatus). The susceptor 100 includes a holding member 10 and a support member 20 that are arranged in a predetermined arrangement direction (in the present embodiment, the vertical direction (Z-axis direction)). The holding member 10 and the supporting member 20 are configured such that the lower surface of the holding member 10 (hereinafter referred to as “holding side bonding surface S2”) and the upper surface of the supporting member 20 (hereinafter referred to as “supporting side bonding surface S3”) are arranged in the arrangement direction. It arrange | positions so that it may oppose. The susceptor 100 further includes a bonding layer 30 disposed between the holding-side bonding surface S2 of the holding member 10 and the support-side bonding surface S3 of the support member 20. The holding member 10 corresponds to the second ceramic member in the claims, the support member 20 corresponds to the first ceramic member in the claims, and the bonding layer 30 includes the bonding portion in the claims. It corresponds to.

（保持部材１０）
保持部材１０は、例えば円形平面の板状部材であり、ＡｌＮ（窒化アルミニウム）を主成分とするセラミックスにより形成されている。なお、ここでいう主成分とは、含有割合（重量割合）の最も多い成分を意味する。保持部材１０の直径は、例えば１００（ｍｍ）〜５００（ｍｍ）程度であり、保持部材１０の厚さは、例えば３（ｍｍ）〜１５（ｍｍ）程度である。 (Holding member 10)
The holding member 10 is, for example, a circular flat plate-like member, and is formed of ceramics whose main component is AlN (aluminum nitride). In addition, the main component here means a component having the largest content ratio (weight ratio). The diameter of the holding member 10 is, for example, about 100 (mm) to 500 (mm), and the thickness of the holding member 10 is, for example, about 3 (mm) to 15 (mm).

保持部材１０の内部には、導電性材料（例えば、タングステンやモリブデン等）により形成された線状の抵抗発熱体で構成されたヒータ５０が設けられている。ヒータ５０の一対の端部は、保持部材１０の中央部付近に配置されている。また、保持部材１０の内部には、一対のビア５２が設けられている。各ビア５２は、上下方向に延びる線状の導電体であり、各ビア５２の上端は、ヒータ５０の各端部に接続されており、各ビア５２の下端は、保持部材１０の保持側接合面Ｓ２側に配置されている。また、保持部材１０の保持側接合面Ｓ２の中央部付近には、一対の受電電極５４が配置されている。各受電電極５４は、各ビア５２の下端に接続されている。これにより、ヒータ５０と各受電電極５４とが電気的に接続されている。   Inside the holding member 10 is provided a heater 50 composed of a linear resistance heating element formed of a conductive material (for example, tungsten or molybdenum). A pair of end portions of the heater 50 are disposed in the vicinity of the center portion of the holding member 10. A pair of vias 52 are provided inside the holding member 10. Each via 52 is a linear conductor extending in the vertical direction, and the upper end of each via 52 is connected to each end of the heater 50, and the lower end of each via 52 is connected to the holding side of the holding member 10. It arrange | positions at the surface S2 side. In addition, a pair of power receiving electrodes 54 is disposed in the vicinity of the central portion of the holding-side joining surface S2 of the holding member 10. Each power receiving electrode 54 is connected to the lower end of each via 52. Thereby, the heater 50 and each receiving electrode 54 are electrically connected.

（支持部材２０）
支持部材２０は、例えば上下方向に延びた円筒状部材であり、支持側接合面Ｓ３（上面）から下面Ｓ４まで上下方向に貫通する貫通孔２２が形成されている。支持部材２０は、保持部材１０と同様に、ＡｌＮを主成分とするセラミックスにより形成されている。支持部材２０の外径は、例えば３０（ｍｍ）〜９０（ｍｍ）程度であり、内径は、例えば１０（ｍｍ）〜６０（ｍｍ）程度であり、上下方向の長さは、例えば１００（ｍｍ）〜３００（ｍｍ）程度である。支持部材２０の貫通孔２２内には、一対の電極端子５６が収容されている。各電極端子５６は、上下方向に延びる棒状の導電体である。各電極端子５６の上端は、各受電電極５４にロウ付けにより接合されている。一対の電極端子５６に電源（図示せず）から電圧が印加されると、ヒータ５０が発熱することによって保持部材１０が温められ、保持部材１０の上面（以下、「保持面Ｓ１」という）に保持されたウェハＷが温められる。なお、ヒータ５０は、保持部材１０の保持面Ｓ１をできるだけ満遍なく温めるため、例えばＺ方向視で略同心円状に配置されている。また、支持部材２０の貫通孔２２内には、熱電対の２本の金属線６０（図２では１本のみ図示）が収容されている。各金属線６０は、上下方向に延びるように配置され、各金属線６０の上端部分６２は、保持部材１０の中央部に埋め込まれている。これにより、保持部材１０内の温度が測定され、その測定結果に基づきウェハＷの温度制御が実現される。 (Supporting member 20)
The support member 20 is, for example, a cylindrical member extending in the vertical direction, and has a through hole 22 penetrating in the vertical direction from the support side joining surface S3 (upper surface) to the lower surface S4. Similar to the holding member 10, the support member 20 is formed of ceramics mainly composed of AlN. The outer diameter of the support member 20 is, for example, about 30 (mm) to 90 (mm), the inner diameter is, for example, about 10 (mm) to 60 (mm), and the length in the vertical direction is, for example, 100 (mm). ) To about 300 (mm). A pair of electrode terminals 56 are accommodated in the through hole 22 of the support member 20. Each electrode terminal 56 is a rod-shaped conductor extending in the vertical direction. The upper ends of the electrode terminals 56 are joined to the power receiving electrodes 54 by brazing. When a voltage is applied to the pair of electrode terminals 56 from a power source (not shown), the heater 50 generates heat to warm the holding member 10, and the upper surface of the holding member 10 (hereinafter referred to as “holding surface S <b> 1”). The held wafer W is heated. In addition, the heater 50 is arrange | positioned substantially concentrically by Z direction view, for example, in order to heat the holding surface S1 of the holding member 10 as uniformly as possible. Also, two metal wires 60 (only one is shown in FIG. 2) of the thermocouple are accommodated in the through hole 22 of the support member 20. Each metal wire 60 is disposed so as to extend in the vertical direction, and an upper end portion 62 of each metal wire 60 is embedded in the central portion of the holding member 10. Thereby, the temperature in the holding member 10 is measured, and the temperature control of the wafer W is realized based on the measurement result.

（接合層３０）
図３は、図２のサセプタ１００におけるＸ１部分のＸＺ断面構成を概略的に示す説明図である。図２および図３に示すように、接合層３０は、円環状のシート層であり、保持部材１０の保持側接合面Ｓ２と支持部材２０の支持側接合面Ｓ３とを接合している。接合層３０は、第１の接合部３４と第２の接合部３２とを含む。第１の接合部３４は、外部に露出し、かつ、保持部材１０の保持側接合面Ｓ２と支持部材２０の支持側接合面Ｓ３との両方に接触している。また、第１の接合部３４は、ＡｌＮを主成分とする材料により形成されている。第２の接合部３２は、Ａｌを含む複合酸化物を主成分とする材料により形成されている。すなわち、第２の接合部３２におけるＡｌＮの含有量は、第１の接合部３４におけるＡｌＮの含有量より少ない。 (Junction layer 30)
FIG. 3 is an explanatory diagram schematically showing an XZ cross-sectional configuration of the X1 portion in the susceptor 100 of FIG. As shown in FIGS. 2 and 3, the bonding layer 30 is an annular sheet layer, and bonds the holding-side bonding surface S <b> 2 of the holding member 10 and the support-side bonding surface S <b> 3 of the support member 20. The bonding layer 30 includes a first bonding portion 34 and a second bonding portion 32. The first joint 34 is exposed to the outside and is in contact with both the holding-side joining surface S2 of the holding member 10 and the support-side joining surface S3 of the support member 20. The first bonding portion 34 is formed of a material mainly composed of AlN. The second bonding portion 32 is formed of a material mainly containing a composite oxide containing Al. That is, the content of AlN in the second joint portion 32 is less than the content of AlN in the first joint portion 34.

具体的には、第２の接合部３２は、略円筒状であり、支持部材２０と略同心円上に位置する。第２の接合部３２は、上下方向視で、円管状であり、かつ、全周にわたって、支持部材２０の支持側接合面Ｓ３に重なっている。また、第２の接合部３２の上面全体は、保持部材１０の保持側接合面Ｓ２に接触しており、第２の接合部３２の下面全体は、支持部材２０の支持側接合面Ｓ３に接触している。第２の接合部３２は、例えば、Ｇｄ（ガドリニウム）とＡｌ（アルミニウム）とを含む複合酸化物を含む材料により形成されている。具体的には、第２の接合部３２は、ＧｄＡｌＯ３と、Ａｌ２Ｏ３（アルミナ）とを含み、ＡｌＮを含まない材料により形成されている。なお、本明細書において、「ＡｌＮを含まない」とは、接合層３０において、複数のＡｌＮ粒子の凝集体であって、互いに隣り合う複数のＡｌＮ粒子によって囲まれた隙間を有する凝集体を、含まないことを意味する。 Specifically, the second joint portion 32 has a substantially cylindrical shape and is positioned on a substantially concentric circle with the support member 20. The second joint portion 32 has a circular tubular shape when viewed in the vertical direction, and overlaps with the support-side joint surface S3 of the support member 20 over the entire circumference. Further, the entire upper surface of the second bonding portion 32 is in contact with the holding-side bonding surface S <b> 2 of the holding member 10, and the entire lower surface of the second bonding portion 32 is in contact with the support-side bonding surface S <b> 3 of the support member 20. doing. The second bonding portion 32 is formed of, for example, a material containing a complex oxide containing Gd (gadolinium) and Al (aluminum). Specifically, the second bonding portion 32 is formed of a material that includes GdAlO 3 and Al 2 O 3 (alumina) but does not include AlN. In the present specification, “not including AlN” means an aggregate of a plurality of AlN particles in the bonding layer 30 and having a gap surrounded by a plurality of adjacent AlN particles. It means not included.

一方、第１の接合部３４は、支持部材２０（接合層３０）の内周側に位置する内周側接合部３４Ａと、支持部材２０の外周側に位置する外周側接合部３４Ｂとを含む。具体的には、内周側接合部３４Ａは、第２の接合部３２の内周面全体を覆う略円筒状であり、該内周側接合部３４Ａの上面全体は、保持部材１０の保持側接合面Ｓ２に接触しており、該内周側接合部３４Ａの下面全体は、支持部材２０の支持側接合面Ｓ３に接触している。外周側接合部３４Ｂは、第２の接合部３２の外周面全体を覆う略円筒状であり、該外周側接合部３４Ｂの上面全体は、保持部材１０の保持側接合面Ｓ２に接触しており、該外周側接合部３４Ｂの下面全体は、支持部材２０の支持側接合面Ｓ３に接触している。このため、第２の接合部３２は、接合層３０の内部に位置しており、接合層３０の外部に露出していない。また、外周側接合部３４Ｂの径方向の寸法Ｄ１は、内周側接合部３４Ａの径方向の寸法Ｄ２に比べて大きい。外周側接合部３４Ｂの径方向の寸法Ｄ１と、内周側接合部３４Ａの径方向の寸法Ｄ２と、第２の接合部３２の径方向の寸法ＤＸとの比率の範囲は、次の通りであることが好ましい。
Ｄ１：Ｄ２：ＤＸ＝０．１５〜５．１３：０．１０〜４．１０：９０．７７〜９９．７４
例えば、Ｄ１＝１５０（μｍ）、Ｄ２＝１００（μｍ）、ＤＸ＝１９０００（μｍ）でもよいし、Ｄ１＝３０〜１０００（μｍ）、Ｄ２＝２０〜８００（μｍ）、ＤＸ＝１７０００〜２００００（μｍ）でもよい。なお、接合層３０の外径は、例えば３０（ｍｍ）〜９０（ｍｍ）程度であり、内径は、例えば１０（ｍｍ）〜６０（ｍｍ）程度であり、厚さは、例えば２（μｍ）〜６０（μｍ）程度である。 On the other hand, the first joint portion 34 includes an inner peripheral side joint portion 34A located on the inner peripheral side of the support member 20 (joint layer 30) and an outer peripheral side joint portion 34B located on the outer peripheral side of the support member 20. . Specifically, the inner peripheral side joint portion 34 </ b> A has a substantially cylindrical shape covering the entire inner peripheral surface of the second joint portion 32, and the entire upper surface of the inner peripheral side joint portion 34 </ b> A is on the holding side of the holding member 10. It is in contact with the joint surface S <b> 2, and the entire lower surface of the inner peripheral side joint portion 34 </ b> A is in contact with the support side joint surface S <b> 3 of the support member 20. The outer peripheral side joining portion 34B has a substantially cylindrical shape covering the entire outer peripheral surface of the second joint portion 32, and the entire upper surface of the outer peripheral side joining portion 34B is in contact with the holding side joining surface S2 of the holding member 10. The entire lower surface of the outer peripheral side joint portion 34B is in contact with the support side joint surface S3 of the support member 20. For this reason, the second bonding portion 32 is located inside the bonding layer 30 and is not exposed to the outside of the bonding layer 30. In addition, the radial dimension D1 of the outer peripheral joint 34B is larger than the radial dimension D2 of the inner peripheral joint 34A. The range of the ratio of the radial dimension D1 of the outer peripheral side joint 34B, the radial dimension D2 of the inner peripheral side joint 34A, and the radial dimension DX of the second joint 32 is as follows. Preferably there is.
D1: D2: DX = 0.15 to 5.13: 0.10 to 4.10: 90.77 to 99.74
For example, D1 = 150 (μm), D2 = 100 (μm), DX = 19000 (μm), D1 = 30 to 1000 (μm), D2 = 20 to 800 (μm), DX = 17000 to 20000 ( μm). The outer diameter of the bonding layer 30 is, for example, about 30 (mm) to 90 (mm), the inner diameter is, for example, about 10 (mm) to 60 (mm), and the thickness is, for example, 2 (μm). It is about ~ 60 (micrometer).

Ａ−２．サセプタ１００の製造方法：
次に、本実施形態におけるサセプタ１００の製造方法を説明する。図３は、本実施形態におけるサセプタ１００の製造方法を示すフローチャートである。はじめに、保持部材１０と支持部材２０とを準備する（Ｓ１１０）。上述したように、保持部材１０と支持部材２０とは、いずれもＡｌＮを主成分とするセラミックスにより形成されている。なお、保持部材１０および支持部材２０は、公知の製造方法によって製造可能であるため、ここでは製造方法の説明を省略する。 A-2. Manufacturing method of susceptor 100:
Next, a method for manufacturing the susceptor 100 in the present embodiment will be described. FIG. 3 is a flowchart showing a method for manufacturing the susceptor 100 in the present embodiment. First, the holding member 10 and the support member 20 are prepared (S110). As described above, both the holding member 10 and the support member 20 are made of ceramics whose main component is AlN. In addition, since the holding member 10 and the support member 20 can be manufactured by a well-known manufacturing method, description of a manufacturing method is abbreviate | omitted here.

次に、接合層３０の形成材料であるペースト状の接合剤を準備する（Ｓ１２０）。具体的には、Ｇｄ２Ｏ３（ガドリニア）粉末とＡｌ２Ｏ３粉末とを所定の割合で混合し、さらに、アクリルバインダおよびブチルカルビトールと共に混合することにより、ペースト状の接合剤を形成する。なお、ペースト状の接合剤の形成材料の組成比は、例えば、Ｇｄ２Ｏ３が２４ｍｏｌ％であり、Ａｌ２Ｏ３が７６ｍｏｌ％であることが好ましい。次に、保持部材１０と支持部材２０との間に、準備されたペースト状の接合剤を配置する（Ｓ１３０）。具体的には、保持部材１０の保持側接合面Ｓ２と支持部材２０の支持側接合面Ｓ３とをラップ研磨し、各接合面Ｓ２，Ｓ３の表面粗さを１（μｍ）以下、平坦度を１０（μｍ）以下にする。そして、保持部材１０の保持側接合面Ｓ２と支持部材２０の支持側接合面Ｓ３との少なくとも一方に、マスク印刷により、ペースト状の接合剤を塗布して脱脂処理をする。その後、支持部材２０の支持側接合面Ｓ３と保持部材１０の保持側接合面Ｓ２とを、ペースト状の接合剤を介して重ね合わせることにより、保持部材１０と支持部材２０との積層体を形成する。 Next, a paste-like bonding agent that is a material for forming the bonding layer 30 is prepared (S120). Specifically, Gd 2 O 3 (gadolinia) powder and Al 2 O 3 powder are mixed at a predetermined ratio, and further mixed with an acrylic binder and butyl carbitol to form a paste-like bonding agent. . The composition ratio of the material for forming the pasty bonding agent is, for example, is 24mol% Gd 2 O 3, is preferably Al 2 O 3 is 76 mol%. Next, the prepared paste-like bonding agent is disposed between the holding member 10 and the support member 20 (S130). Specifically, the holding-side joining surface S2 of the holding member 10 and the support-side joining surface S3 of the support member 20 are lapped, the surface roughness of each joining surface S2, S3 is 1 (μm) or less, and the flatness is set. 10 (μm) or less. Then, a paste-like bonding agent is applied to at least one of the holding-side bonding surface S2 of the holding member 10 and the supporting-side bonding surface S3 of the support member 20 by mask printing to perform a degreasing process. Thereafter, the support-side joining surface S3 of the support member 20 and the holding-side joining surface S2 of the holding member 10 are overlapped with each other via a paste-like bonding agent to form a laminate of the holding member 10 and the support member 20. To do.

次に、保持部材１０と支持部材２０との積層体（中間体）をホットプレス炉内に配置し、カーボンケース（図示せず）で覆い、Ｎ２（窒素）雰囲気で加圧しつつ加熱する（Ｓ１４０）。これにより、ペースト状の接合剤が溶融して接合層３０が形成され、保持部材１０と支持部材２０とが接合層３０により接合される。この加熱・加圧接合における圧力は、０．１ＭＰａ以上、１５ＭＰａ以下の範囲内に設定されることが好ましい。なお、本実施形態では、後述する加熱・加圧接合における加熱工程の昇温期間から、昇温後の温度維持期間、温度維持後の降温期間までの全期間にわたって圧力は一定である。加熱・加圧接合における圧力が０．１ＭＰａ以上に設定されると、被接合部材（保持部材１０や支持部材２０）の表面にうねり等があった場合でも被接合部材間に接合されない隙間が生じることが抑制され、初期の接合強度が低下することを抑制することができる。また、加熱・加圧接合における圧力が１５ＭＰａ以下に設定されると、保持部材１０の割れや支持部材２０の変形が発生することを抑制することができる。なお、接合面Ｓ２，Ｓ３には、０．２Ｋｇｆ／ｃｍ２〜３Ｋｇｆ／ｃｍ２の圧力が付与される。 Next, the laminated body (intermediate body) of the holding member 10 and the supporting member 20 is placed in a hot press furnace, covered with a carbon case (not shown), and heated while being pressurized in an N 2 (nitrogen) atmosphere ( S140). Thereby, the paste-like bonding agent is melted to form the bonding layer 30, and the holding member 10 and the support member 20 are bonded by the bonding layer 30. The pressure in this heating / pressure bonding is preferably set within a range of 0.1 MPa to 15 MPa. In the present embodiment, the pressure is constant over the entire period from the temperature rising period of the heating step in heating / pressure bonding described later to the temperature maintaining period after the temperature rising and the temperature falling period after the temperature maintaining. When the pressure in the heating and pressure bonding is set to 0.1 MPa or more, a gap that is not bonded is generated between the bonded members even when the surface of the bonded member (the holding member 10 or the support member 20) is wavy. This can suppress the decrease in initial bonding strength. Moreover, when the pressure in heating and pressure bonding is set to 15 MPa or less, it is possible to prevent the holding member 10 from cracking and the support member 20 from being deformed. Note that a pressure of 0.2 kgf / cm 2 to 3 kgf / cm 2 is applied to the joint surfaces S2 and S3.

また、この加熱・加圧接合における温度は、１６５０（℃）〜１７５０（℃）、好ましくは１７５０（℃）まで上昇させることが好ましい。加熱・加圧接合における温度が１７５０（℃）まで上昇したら、１７５０（℃）の状態を約１０（分）維持した後、ホットプレス炉内の温度を室温まで下げる。上記のように、上記積層体に対してＮ２雰囲気で加熱処理がされることにより、ペースト状の接合剤の外部に露出する部分付近において、該接合剤に含まれるＡｌ２Ｏ３と周囲のＮ２とが反応してＡｌＮが生成される。これにより、上述した第１の接合部３４および第２の接合部３２を含む接合層３０を形成することができる。ここで、上記加熱処理を１時間以内とすることにより、接合剤の形成材料が保持部材１０や支持部材２０のＡｌＮの粒界を通じて移動して接合界面に空隙が生じることを原因とする保持部材１０と支持部材２０との間の気密性低下や接合強度低下を抑制することができる。加熱・加圧接合の後、必要により後処理（外周や上下面の研磨、端子の形成等）を行う。以上の製造方法により、上述した構成のサセプタ１００が製造される。 Moreover, it is preferable to raise the temperature in this heating and pressure bonding to 1650 (° C.) to 1750 (° C.), preferably 1750 (° C.). When the temperature in the heating and pressure bonding rises to 1750 (° C.), the state of 1750 (° C.) is maintained for about 10 (minutes), and then the temperature in the hot press furnace is lowered to room temperature. As described above, by heat-treating the laminate in an N 2 atmosphere, in the vicinity of the portion exposed to the outside of the paste-like bonding agent, Al 2 O 3 contained in the bonding agent and the surroundings Reaction with N 2 produces AlN. Thereby, the bonding layer 30 including the first bonding portion 34 and the second bonding portion 32 described above can be formed. Here, when the heat treatment is performed within 1 hour, the holding member is caused by the fact that the forming material of the bonding agent moves through the AlN grain boundaries of the holding member 10 and the support member 20 to generate a void at the bonding interface. 10 and the support member 20 can be prevented from being deteriorated in airtightness and in bonding strength. After heating / pressure bonding, post-treatment (polishing of outer periphery and upper and lower surfaces, formation of terminals, etc.) is performed as necessary. By the above manufacturing method, the susceptor 100 having the above-described configuration is manufactured.

Ａ−３．本実施形態の効果：
以上説明したように、本実施形態のサセプタ１００では、接合層３０は、第１の接合部３４と第２の接合部３２とを含む。第１の接合部３４は、接合層３０の外部に露出し、かつ、保持部材１０と支持部材２０との両方に接触し、ＡｌＮを主成分とする材料により形成されている。第２の接合部３２は、Ａｌを含む複合酸化物を主成分とする材料により形成されている。このように、本実施形態のサセプタ１００によれば、接合層３０は、ＡｌＮを主成分としない材料により形成された第２の接合部３２を含むため、接合層全体がＡｌＮを主成分とする材料により形成された構成に比べて、ＡｌＮ同士の間に形成される空隙を原因とする接合強度の低下を抑制することができる。また、本実施形態のサセプタ１００では、接合層３０は、ＡｌＮを主成分とする材料により形成された第１の接合部３４を含むため、接合層全体がＡｌＮを主成分としない材料により形成された構成に比べて、セラミックス部材（保持部材１０、支持部材２０）の熱膨張率と接合層の熱膨張率との差を原因とするマイクロクラックの発生を抑制することができる。また、仮に、第２の接合部３２にマイクロクラックが発生したとしても、そのマイクロクラックの進展が第１の接合部３４によって抑制される。すなわち、本実施形態のサセプタ１００によれば、接合層３０が、Ａｌを含む複合酸化物を主成分とする材料により形成された接合部を含む場合であっても、保持部材１０と支持部材２０とが、これらの部材と同じようにＡｌＮを主成分とする第１の接合部３４を介して一体的に接合される。これにより、保持部材１０と支持部材２０との接合強度の低下およびマイクロクラックの進展を抑制することができる。 A-3. Effects of this embodiment:
As described above, in the susceptor 100 of this embodiment, the bonding layer 30 includes the first bonding portion 34 and the second bonding portion 32. The first bonding portion 34 is exposed to the outside of the bonding layer 30 and is in contact with both the holding member 10 and the support member 20 and is formed of a material mainly composed of AlN. The second bonding portion 32 is formed of a material mainly containing a composite oxide containing Al. As described above, according to the susceptor 100 of the present embodiment, the bonding layer 30 includes the second bonding portion 32 formed of a material that does not contain AlN as a main component. Therefore, the entire bonding layer has AlN as a main component. Compared to a configuration formed of a material, it is possible to suppress a decrease in bonding strength caused by a gap formed between AlNs. Further, in the susceptor 100 of the present embodiment, the bonding layer 30 includes the first bonding portion 34 formed of a material containing AlN as a main component. Therefore, the entire bonding layer is formed of a material not containing AlN as a main component. Compared to the above configuration, the occurrence of microcracks caused by the difference between the thermal expansion coefficient of the ceramic member (the holding member 10 and the support member 20) and the thermal expansion coefficient of the bonding layer can be suppressed. Even if a microcrack occurs in the second joint portion 32, the progress of the microcrack is suppressed by the first joint portion 34. That is, according to the susceptor 100 of the present embodiment, the holding member 10 and the support member 20 even when the bonding layer 30 includes a bonding portion formed of a material mainly containing a composite oxide containing Al. Are joined together via the first joining portion 34 containing AlN as a main component in the same manner as these members. Thereby, the fall of the joint strength of the holding member 10 and the supporting member 20 and progress of a microcrack can be suppressed.

しかも、本実施形態のサセプタ１００によれば、接合層３０の全周にわたって、保持部材１０と支持部材２０とが、これらの部材と同じようにＡｌＮを主成分とする第１の接合部３４を介して一体的に接合される。これにより、仮に接合層３０の内部でマイクロクラックが発生したとしても、そのマイクロクラックが接合層３０の外周面に至ることを抑制することができる。   Moreover, according to the susceptor 100 of the present embodiment, the holding member 10 and the support member 20 have the first bonding portion 34 containing AlN as a main component in the same manner as these members over the entire circumference of the bonding layer 30. Are joined together. Thereby, even if a microcrack occurs inside the bonding layer 30, the microcrack can be prevented from reaching the outer peripheral surface of the bonding layer 30.

また、本実施形態のサセプタ１００によれば、第２の接合部３２におけるＡｌＮの含有量は、第１の接合部３４におけるＡｌＮの含有量より少ない。これにより、接合層３０のうち、第１の接合部３４以外の部分（第２の接合部３２）において、ＡｌＮ同士の間に空隙が形成されることを原因とする保持部材１０と支持部材２０との接合強度の低下を抑制することができる。   Further, according to the susceptor 100 of the present embodiment, the content of AlN in the second joint portion 32 is smaller than the content of AlN in the first joint portion 34. As a result, the holding member 10 and the support member 20 caused by the formation of voids between AlNs in the bonding layer 30 other than the first bonding portion 34 (second bonding portion 32). It is possible to suppress a decrease in bonding strength.

また、本実施形態のサセプタ１００によれば、第１の接合部３４は、支持部材２０の内周側に位置する内周側接合部３４Ａと、支持部材２０の外周側に位置し、内周側接合部３４Ａに比べて、貫通孔２２の径方向の寸法が大きい外周側接合部３４Ｂとを含む。これにより、特に熱膨張による膨張量が大きい支持部材２０の外周側において、保持部材１０と支持部材２０との接合強度の低下をより確実に抑制することができる。   Further, according to the susceptor 100 of the present embodiment, the first joining portion 34 is located on the inner peripheral side joining portion 34 </ b> A located on the inner peripheral side of the support member 20 and on the outer peripheral side of the support member 20. Compared to the side joint 34A, an outer peripheral side joint 34B having a larger radial dimension of the through hole 22 is included. Thereby, especially in the outer peripheral side of the supporting member 20 with a large expansion amount due to thermal expansion, it is possible to more reliably suppress a decrease in the bonding strength between the holding member 10 and the supporting member 20.

Ｂ．変形例：
本明細書で開示される技術は、上述の実施形態に限られるものではなく、その要旨を逸脱しない範囲において種々の形態に変形することができ、例えば次のような変形も可能である。 B. Variation:
The technology disclosed in the present specification is not limited to the above-described embodiment, and can be modified into various forms without departing from the gist thereof. For example, the following modifications are possible.

上記実施形態において、第１の接合部３４は、第２の接合部３２の外周の一部分だけに形成されているとしてもよい。すなわち、接合層３０において、第２の接合部３２の一部が外部に露出しているとしてもよい。例えば、第１の接合部３４は、内周側接合部３４Ａおよび外周側接合部３４Ｂのいずれか一方を含まないとしてもよい。   In the above embodiment, the first joint 34 may be formed only on a part of the outer periphery of the second joint 32. That is, in the bonding layer 30, a part of the second bonding portion 32 may be exposed to the outside. For example, the first joint 34 may not include any one of the inner peripheral joint 34A and the outer peripheral joint 34B.

上記実施形態において、内周側接合部３４Ａの径方向の寸法と外周側接合部３４Ｂの径方向の寸法とは同じであるとしてもよいし、内周側接合部３４Ａの径方向の寸法が外周側接合部３４Ｂの径方向の寸法より大きいとしてもよい。   In the above-described embodiment, the radial dimension of the inner peripheral joint 34A and the radial dimension of the outer peripheral joint 34B may be the same, and the radial dimension of the inner peripheral joint 34A is the outer periphery. It may be larger than the dimension in the radial direction of the side joint 34B.

上記実施形態における保持部材１０および支持部材２０を形成するセラミックスは、ＡｌＮを主成分として含んでいれば、他の元素を含んでいてもよい。また、第２の接合部３２は、ＡｌＮを含むとしてもよい。また、第１の接合部３４は、ＡｌＮを主成分として含んでいれば、他の元素を含んでいてもよい。また、第２の接合部３２は、ＧｄＡｌＯ３とＡｌ２Ｏ３（アルミナ）との複合酸化物以外の、Ａｌを含む複合酸化物を主成分とする材料により形成されていてもよいし、ＡｌＮを含んでいてもよい。要するに、第２の接合部３２は、Ａｌを含む複合酸化物を主成分とする材料により形成されていればよい。 The ceramic forming the holding member 10 and the support member 20 in the above embodiment may contain other elements as long as it contains AlN as a main component. The second bonding portion 32 may include AlN. Moreover, the 1st junction part 34 may contain another element, as long as it contains AlN as a main component. The second joint portion 32, other than the composite oxide of GdAlO 3 and Al 2 O 3 (alumina), may be formed of a material mainly containing a composite oxide containing Al, AlN May be included. In short, the second bonding portion 32 only needs to be formed of a material whose main component is a composite oxide containing Al.

上記実施形態において、保持部材１０と支持部材２０とが、一体の接合層３０ではなく、複数の接合部分によって接合されているとしてもよい。具体的には、保持部材１０と支持部材２０との間に、保持部材１０と支持部材２０との対向方向に直交する一の仮想平面上に配置された複数の接合部分が離散的に形成されているとともに、保持部材１０と支持部材２０とが、保持部材１０および支持部材２０の形成材料であるＡｌＮ粒子を介して部分的に連結されているとしてもよい。   In the above-described embodiment, the holding member 10 and the support member 20 may be bonded by a plurality of bonding portions instead of the integrated bonding layer 30. Specifically, a plurality of joint portions arranged on one virtual plane orthogonal to the facing direction of the holding member 10 and the support member 20 are discretely formed between the holding member 10 and the support member 20. In addition, the holding member 10 and the support member 20 may be partially connected via AlN particles, which are forming materials of the holding member 10 and the support member 20.

また、上記実施形態におけるサセプタ１００の製造方法はあくまで一例であり、種々変形可能である。   Moreover, the manufacturing method of the susceptor 100 in the above embodiment is merely an example, and various modifications can be made.

本発明は、サセプタ１００に限らず、ポリイミドヒータ等の他の加熱装置、セラミックス板とベース板とを備え、セラミックス板の表面上に対象物を保持する保持装置（例えば、静電チャックや真空チャック）、シャワーヘッド等の他の半導体製造装置用部品にも適用可能である。   The present invention is not limited to the susceptor 100, and includes other heating devices such as polyimide heaters, a ceramic plate and a base plate, and a holding device (for example, an electrostatic chuck or a vacuum chuck) that holds an object on the surface of the ceramic plate. ), And other semiconductor manufacturing apparatus parts such as a shower head.

１０：保持部材 ２０：支持部材 ２２：貫通孔 ３０：接合層 ３２：第２の接合部 ３４：第１の接合部 ３４Ａ：内周側接合部 ３４Ｂ：外周側接合部 ５０：ヒータ ５２：ビア ５４：受電電極 ５６：電極端子 ６０：金属線 ６２：上端部分 １００：サセプタ Ｄ１，Ｄ２：寸法 Ｓ１：保持面 Ｓ２：保持側接合面 Ｓ３：支持側接合面 Ｓ４：下面 Ｗ：ウェハ DESCRIPTION OF SYMBOLS 10: Holding member 20: Support member 22: Through-hole 30: Joining layer 32: 2nd joined part 34: 1st joined part 34A: Inner peripheral side joined part 34B: Outer peripheral side joined part 50: Heater 52: Via 54 : Power receiving electrode 56: Electrode terminal 60: Metal wire 62: Upper end portion 100: Susceptor D1, D2: Dimensions S1: Holding surface S2: Holding side bonding surface S3: Supporting side bonding surface S4: Lower surface W: Wafer

Claims (5)

ＡｌＮを主成分とする材料により形成された第１のセラミックス部材と、
ＡｌＮを主成分とする材料により形成された第２のセラミックス部材と、
前記第１のセラミックス部材と前記第２のセラミックス部材との間に配置され、前記第１のセラミックス部材と前記第２のセラミックス部材とを接合する接合部と、を備えるセラミックス接合体において、
前記接合部は、
外部に露出し、かつ、前記第１のセラミックス部材と前記第２のセラミックス部材との両方に接触し、ＡｌＮを主成分とする材料により形成された第１の接合部と、
Ａｌを含む複合酸化物を主成分とする材料により形成された第２の接合部と、を含むことを特徴とするセラミックス接合体。 A first ceramic member formed of a material mainly composed of AlN;
A second ceramic member formed of a material mainly composed of AlN;
In a ceramic joined body, comprising: a joint portion that is disposed between the first ceramic member and the second ceramic member and joins the first ceramic member and the second ceramic member;
The joint is
A first joint that is exposed to the outside and is in contact with both the first ceramic member and the second ceramic member and is formed of a material mainly composed of AlN;
And a second bonded portion formed of a material mainly composed of a complex oxide containing Al. 請求項１に記載のセラミックス接合体において、
前記第１の接合部は、前記接合部の全周にわたって形成されていることを特徴とするセラミックス接合体。 In the ceramic joined body according to claim 1,
The first bonded part is formed over the entire circumference of the bonded part. 請求項１または請求項２に記載のセラミックス接合体において、
前記第２の接合部は、前記接合部の内部に位置し、かつ、前記第１のセラミックス部材と前記第２のセラミックス部材との両方に接触し、ＡｌＮの含有量が前記第１の接合部のＡｌＮの含有量より少ないことを特徴とするセラミックス接合体。 In the ceramic joined body according to claim 1 or 2,
The second joint is located inside the joint and contacts both the first ceramic member and the second ceramic member, and the content of AlN is the first joint. A ceramic joined body characterized by being less than the AlN content. 請求項１から請求項３までのいずれか一項に記載のセラミックス接合体において、
前記第１のセラミックス部材には、前記接合部を介して前記第１のセラミックス部材と前記第２のセラミックス部材とが対向する第１の方向に貫通する貫通孔が形成されており、
前記第１の接合部は、前記第１のセラミックス部材の内周側に位置する内周側接合部と、前記第１のセラミックス部材の外周側に位置し、前記貫通孔の径方向の寸法が前記内周側接合部の前記径方向の寸法に比べて大きい外周側接合部とを含むことを特徴とする、セラミックス接合体。 In the ceramic joined body according to any one of claims 1 to 3,
The first ceramic member is formed with a through-hole penetrating in the first direction in which the first ceramic member and the second ceramic member are opposed to each other through the joint portion.
The first joint is located on the inner peripheral side of the first ceramic member and on the outer peripheral side of the first ceramic member, and the radial dimension of the through hole is A ceramic joined body comprising: an outer peripheral side joint portion that is larger than the radial dimension of the inner peripheral side joint portion. ＡｌＮを主成分とする材料により形成された第１のセラミックス部材と、ＡｌＮを主成分とする材料により形成された第２のセラミックス部材とを準備する工程と、
前記第１のセラミックス部材と前記第２のセラミックス部材との間に、Ａｌを含む複合酸化物を主成分とする接合剤を介在させた中間体を、窒素雰囲気で、１６５０（℃）以上、１７５０（℃）以下の温度で、１時間以内、加熱することにより、前記第１のセラミックス部材と前記第２のセラミックス部材とを接合する接合部であって、前記接合部の外部に露出し、かつ、前記第１のセラミックス部材と前記第２のセラミックス部材との両方に接触し、ＡｌＮを主成分とする材料により形成された第１の接合部と、Ａｌを含む複合酸化物を主成分とする材料により形成された第２の接合部と、を含む前記接合部を形成する工程とを含むことを特徴とする、セラミックス接合体の製造方法。 Preparing a first ceramic member formed of a material mainly composed of AlN and a second ceramic member formed of a material mainly composed of AlN;
An intermediate in which a bonding agent mainly containing a composite oxide containing Al is interposed between the first ceramic member and the second ceramic member is 1650 (° C.) or higher and 1750 in a nitrogen atmosphere. (° C.) A junction that joins the first ceramic member and the second ceramic member by heating at a temperature of 1 hour or less for 1 hour or less, exposed to the outside of the junction, and The first bonding part formed of a material containing AlN as a main component and in contact with both the first ceramic member and the second ceramic member, and a composite oxide containing Al as a main component A method of manufacturing a ceramic joined body, comprising: a step of forming the joint portion including a second joint portion formed of a material.
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Publication number Priority date Publication date Assignee Title
JPH10167850A (en) * 1996-10-08 1998-06-23 Ngk Insulators Ltd Production of joined body of aluminum nitride substrate and joining aid used for same
JP2004345952A (en) * 1997-01-30 2004-12-09 Ngk Insulators Ltd Bonding agent for base material of aluminum nitride-based ceramic
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