JP2018525777A - 面状発熱体及び電気伝導薄膜 - Google Patents
面状発熱体及び電気伝導薄膜 Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/78—Heating arrangements specially adapted for immersion heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/013—Heaters using resistive films or coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/017—Manufacturing methods or apparatus for heaters
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
Abstract
Description
前述した実施形態から選択して、気相蒸着のための分散溶液を用意した。表1のような組成を有するように、それぞれ好適な重量を取り、メタノール、マトリックスの前駆体として塩化スズ(SnCl4)、準金属の前駆体として三塩化アンチモン(SbCl3)、転移後金属の前駆体として塩化ビスマス(BiCl3)を混合した分散溶液5gを準備し、蒸着装備内で300℃〜600℃の範囲内で前記分散溶液を加熱し、加熱された基板上に蒸着を行った。
前述した実施形態から選択して、気相蒸着のための分散溶液を用意した。表1のような組成を有するように、それぞれ好適な重量を取り、メタノール、塩化スズ(SnCl4)、三塩化アンチモン(SbCl3)、及び塩化ビスマス(BiCl3)を含む混合溶液10gを準備し、蒸着装備内で300℃〜600℃の範囲内で前記混合溶液を加熱し、加熱された基板上に蒸着を行った。
前述した実施形態から選択して、気相蒸着のための分散溶液を用意した。表1のような組成を有するように、それぞれ好適な重量を取り、メタノール及び塩化スズ(SnCl4)を混合した溶液5gを準備し、蒸着装備内で300℃〜600℃の範囲内で前記分散溶液を加熱し、加熱された基板上に蒸着を行った。
表1は、前記実験例及び比較例による面状発熱体をXPS(x−ray photoelectron spectroscopy)により分析し、組成比を表した表である。組成比の単位はat.%である。
表2は、実験例1、実験例2及び比較例による面状発熱体の面抵抗を四探針を用いて測定し、石英管に取り囲まれた面状発熱体の両端電極の接触部分に220Vの電圧をかけ、その際の最高温度値を表した表である。
図3は、本発明の実験例及び比較例による面状発熱体を時間による温度の変化を示すグラフである。図3を参照すれば、準金属としてアンチモン(Sb)、転移後金属としてビスマス(Bi)がドーピングされていないスズ酸化物を含む比較例(CE1)の面状発熱体は、180分間400℃の温度に維持していて急激に温度が減少した。しかし、準金属としてアンチモン(Sb)、転移後金属としてビスマス(Bi)がドーピングされたスズ酸化物を含む実験例1(EX1)及び実験例2(EX2)の面状発熱体は、300分間500℃〜700℃の温度に維持されていた。したがって、本実施形態による面状発熱体は、温度耐久性が相対的に優れていることが分かる。
Claims (17)
- 基板と、
前記基板上に形成され、1種以上の準金属と1種以上の転移後金属とがドーピングされているスズ酸化物を含む発熱層と、を含む面状発熱体。 - 前記準金属は、前記転移後金属よりもドーピング量が相対的に多い、請求項1に記載の面状発熱体。
- 前記転移後金属のドーピング量は、前記準金属のドーピング量の1/7ないし1/5の範囲内である、請求項2に記載の面状発熱体。
- 前記スズ酸化物内の前記転移後金属のドーピング量は、0.10ないし0.15at.%である、請求項3に記載の面状発熱体。
- 前記スズ酸化物内の前記準金属のドーピング量は、0.65ないし0.75at.%である、請求項4に記載の面状発熱体。
- 前記転移後金属のドーピング量が増加するほど、面抵抗は減少し、前記準金属のドーピング量が増加するほど、面抵抗は増加することに基づいて、前記ドーピング量を決めることで、所定の発熱温度区間を有するように設計された、請求項5に記載の面状発熱体。
- 前記準金属は、ホウ素(B)、ケイ素(Si)、ゲルマニウム(Ge)、砒素(As)、アンチモン(Sb)及びテルル(Te)からなるグループから選択された少なくとも一つを含む、請求項1に記載の面状発熱体。
- 前記転移後金属は、アルミニウム(Al)、ガリウム(Ga)、リン(In)、スズ(Sn)、タリウム(Tl)、鉛(Pb)、ビスマス(Bi)及びポロニウム(Po)からなるグループから選択された少なくとも一つを含む、請求項1に記載の面状発熱体。
- 前記発熱層上に形成される金属電極を更に含む、請求項1に記載の面状発熱体。
- 前記発熱層上に積層される保護層を更に含む、請求項1に記載の面状発熱体。
- 前記発熱層及び前記保護層は、交互に繰り返して積層される、請求項10に記載の面状発熱体。
- 発熱温度が500℃ないし800℃の範囲内である、請求項1に記載の面状発熱体。
- 前記準金属及び前記転移後金属は、前記スズ酸化物内で酸化物の形態に存在する、請求項1に記載の面状発熱体。
- {110}面のX線回折ピーク位置2θが20゜〜30゜の範囲内にあり、{211}面のX線回折ピーク位置2θが45゜〜55゜の範囲内にある、請求項1に記載の面状発熱体。
- 前記発熱層は、100nmないし500nmの厚さを有する、請求項1に記載の面状発熱体。
- 前記面状発熱体は、医療用機器、健康補助器、発熱機能のある装飾品、家電製品、建物、建物の底、タイルのような仕上げ材、煉瓦、建物の外部または内部、自動車ガラス窓、農業施設機器、産業用オーブン、印刷配線回路基板、透明電極、太陽電池、印刷用インク、または船舶用塗料に利用できる、請求項1に記載の面状発熱体。
- 基板上に形成され、1種以上の準金属と1種以上の転移後金属とがドーピングされているスズ酸化物を含む発熱層を含む電気伝導薄膜。
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EP3319397B1 (en) | 2021-06-23 |
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