JP2018510533A - Memsマイクロフォンと圧力センサの集積構造及びその製造方法 - Google Patents
Memsマイクロフォンと圧力センサの集積構造及びその製造方法 Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 44
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- 238000000034 method Methods 0.000 claims description 27
- 239000012528 membrane Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 14
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- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 3
- 239000003990 capacitor Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
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- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/006—Interconnection of transducer parts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L7/00—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
- G01L7/02—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
- G01L7/08—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
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- H—ELECTRICITY
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- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- H—ELECTRICITY
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- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- H—ELECTRICITY
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- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
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Abstract
Description
ステップa)共通基板に絶縁層と第1多結晶シリコン層をこの順で堆積するステップと、
ステップb)続いて第1多結晶シリコン層の上方に犠牲層と第2多結晶シリコン層をこの順で堆積するステップと、
ステップc)第2多結晶シリコン層をエッチングして、MEMSマイクロフォンの振動膜及び圧力センサの上部電極を形成するステップと、
ステップd)犠牲層を腐食して、MEMSマイクロフォンと圧力センサの収容キャビティを形成し、MEMSマイクロフォンと圧力センサとの間の犠牲層を腐食するステップと、
ステップe)第1多結晶シリコン層をエッチングして、MEMSマイクロフォンの背後電極及び圧力センサの下部電極を形成するステップと、
ステップf)共通基板におけるMEMSマイクロフォンの背後電極の下方に位置する部位をエッチングして、バックキャビティを形成するステップと、
ステップg)背後電極の下方に位置する絶縁層をエッチングするステップと、を含む製造方法を提供する。
Claims (10)
- MEMSマイクロフォンと圧力センサの集積構造の製造方法であって、
ステップa)共通基板(1)に絶縁層(2)と第1多結晶シリコン層(3)をこの順で堆積するステップと、
ステップb)続けて第1多結晶シリコン層(3)の上方に犠牲層(7)と第2多結晶シリコン層(6)をこの順で堆積するステップと、
ステップc)第2多結晶シリコン層(6)をエッチングして、MEMSマイクロフォンの振動膜(6a)及び圧力センサの上部電極(6b)を形成するステップと、
ステップd)犠牲層(7)を腐食して、MEMSマイクロフォンと圧力センサの収容キャビティ(4)を形成し、MEMSマイクロフォンと圧力センサとの間の犠牲層(7)を腐食するステップと、
ステップe)第1多結晶シリコン層(3)をエッチングして、MEMSマイクロフォンの背後電極(3a)及び圧力センサの下部電極(3b)を形成するステップと、
ステップf)共通基板(1)におけるMEMSマイクロフォン背後電極(3a)の下方に位置する部位をエッチングして、バックキャビティ(10)を形成するステップと、
ステップg)背後電極(3a)の下方に位置する絶縁層(2)をエッチングするステップと、
を含むことを特徴とする製造方法。 - 前記ステップc)は、第2多結晶シリコン層(6)をエッチングし、振動膜(6a)、上部電極(6b)の領域に腐食材料が貫通する腐食孔(60)を形成するステップをさらに含み、
前記ステップd)とステップe)の間には、続けて振動膜(6a)、上部電極(6b)に多結晶シリコン膜を堆積し、腐食孔(60)の位置に振動膜(6a)、上部電極(6b)の下端に位置するフランジ(61)を形成するステップをさらに含む
ことを特徴とする請求項1に記載の製造方法。 - フランジ(61)を形成した後、振動膜(6a)を薄くするステップをさらに含む
ことを特徴とする請求項2に記載の製造方法。 - 前記ステップd)は、犠牲層(7)を腐食し、犠牲層(7)にそれぞれ振動膜(6a)と第1多結晶シリコン層(3)、上部電極(6b)と第1多結晶シリコン層(3)を貫通する貫通孔(5)を形成するステップをさらに含み、第1多結晶シリコン層(3)の電気信号を導出するために、貫通孔(5)に金属部(8)を作製するステップをさらに含む
ことを特徴とする請求項1に記載の製造方法。 - 前記ステップg)において、先ず背後電極(3a)及び背後電極(3a)の下方に位置する絶縁層(2)に気流導通孔(30)をエッチングした後、背後電極(3a)の下方に位置する絶縁層(2)をエッチングする
ことを特徴とする請求項1に記載の製造方法。 - MEMSマイクロフォンと圧力センサの集積構造であって、
MEMSマイクロフォンを構成する振動膜(6a)、背後電極(3a)、及び振動膜(6a)と背後電極(3a)との間に支持される犠牲層(7)が設置されている共通基板(1)を備えて、
前記共通基板(1)には、圧力センサを構成する上部電極(6b)、下部電極(3b)、及び上部電極(6b)と下部電極(3b)との間に支持される犠牲層(7)がさらに設置されており、
前記共通基板(1)における背後電極(3a)に対応する位置にはバックキャビティ(10)が設置され、前記背後電極(3a)はバックキャビティ(10)の上方で懸架されている
ことを特徴とする集積構造。 - 前記背後電極(3a)、下部電極(3b)が共通基板(1)に接触する位置には絶縁層(2)が設置されている
ことを特徴とする請求項6に記載の集積構造。 - 前記MEMSマイクロフォンと圧力センサの犠牲層(7)にはそれぞれ背後電極(3a)と振動膜(6a)、下部電極(3b)と上部電極(6b)を貫通する貫通孔が設置され、前記貫通孔内にはそれぞれ背後電極(3a)、下部電極(3b)の電気信号を導出する金属部(8)が設置されている
ことを特徴とする請求項6に記載の集積構造。 - 前記振動膜(6a)における背後電極(3a)に隣接する側の端面には背後電極(3a)に伸びるフランジ(61)が複数設置され、前記上部電極(6b)における下部電極(3b)に隣接する側の端面には下部電極(3b)に伸びるフランジ(61)が複数設置されている
ことを特徴とする請求項6に記載の集積構造。 - 前記フランジ(61)は逆立ち円錐状とされていることを特徴とする請求項6に記載の集積構造。
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CN201510287121.3A CN104883652B (zh) | 2015-05-29 | 2015-05-29 | Mems麦克风、压力传感器集成结构及其制造方法 |
CN201510287121.3 | 2015-05-29 | ||
PCT/CN2015/097315 WO2016192373A1 (zh) | 2015-05-29 | 2015-12-14 | Mems麦克风、压力传感器集成结构及其制造方法 |
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