JP2018504747A - 有機発光素子 - Google Patents
有機発光素子 Download PDFInfo
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- JP2018504747A JP2018504747A JP2017534577A JP2017534577A JP2018504747A JP 2018504747 A JP2018504747 A JP 2018504747A JP 2017534577 A JP2017534577 A JP 2017534577A JP 2017534577 A JP2017534577 A JP 2017534577A JP 2018504747 A JP2018504747 A JP 2018504747A
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- light emitting
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- 238000000605 extraction Methods 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000011159 matrix material Substances 0.000 claims description 49
- 239000002245 particle Substances 0.000 claims description 43
- 229910044991 metal oxide Inorganic materials 0.000 claims description 27
- 150000004706 metal oxides Chemical class 0.000 claims description 27
- 239000011148 porous material Substances 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 157
- 239000011295 pitch Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000008859 change Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000005345 chemically strengthened glass Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000004624 confocal microscopy Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (10)
- 第1基板;
前記第1基板上に形成される内部光取り出し層;
前記内部光取り出し層上に形成される第1電極;
前記第1電極上に形成される有機発光層;及び
前記有機発光層上に形成される第2電極;
を含み、
前記内部光取り出し層の表面にはコルゲーションが形成され、
前記コルゲーションが前記第1電極、前記有機発光層及び前記第2電極に順に転写されて、前記第2電極の表面はコルゲート構造をなし、前記コルゲート構造は、多数の凸部及び互いに隣接する前記凸部の間に形成される多数の凹部からなり、
互いに隣接する前記凸部の間のピッチ(pitch)と前記凹部の深さ(depth)との横縦比(depth/pitch)は0.1〜7であり、
前記内部光取り出し層は、
前記第1基板上に形成され、金属酸化物からなり、割れが形成されているマトリックス層、
前記マトリックス層内部に分散されており、前記金属酸化物と屈折率が異なる金属酸化物からなる多数の散乱粒子、及び
前記マトリックス層の表面に前記割れを埋め込む形態で充填されて前記マトリックス層の表面粗さを緩和させる充填層を含み、
前記充填層の表面には、前記散乱粒子及び前記散乱粒子の凝集体の形状が転写された形態の前記コルゲーションが形成されていることを特徴とする、有機発光素子。 - 前記割れは、前記多数の散乱粒子の間及び前記凝集体の間に沿って形成されることを特徴とする、請求項1に記載の有機発光素子。
- 前記充填層の表面粗さは、前記マトリックス層の表面粗さよりも相対的に低いことを特徴とする、請求項2に記載の有機発光素子。
- 前記マトリックス層は、SiO2、TiO2、ZrO2、ZnO2及びSnO2を含む金属酸化物候補群のいずれか一種または二種以上の組み合わせからなることを特徴とする、請求項1に記載の有機発光素子。
- 前記散乱粒子は、SiO2、TiO2、ZnO2及びSnO2を含む金属酸化物候補群のいずれか一種または二種以上の組み合わせからなり、且つ前記金属酸化物候補群のいずれか一種または二種以上の組み合わせからなる金属酸化物が前記マトリックス層をなす金属酸化物として選択される場合、前記散乱粒子は、残りの金属酸化物候補群のうちの前記マトリックス層をなす金属酸化物よりも屈折率が小さい一種または二種以上の金属酸化物の組み合わせからなることを特徴とする、請求項4に記載の有機発光素子。
- 前記多数の散乱粒子の一部または全部は、
中空からなるコア、及び
前記コアを覆うシェル構造からなることを特徴とする、請求項1に記載の有機発光素子。 - 前記内部光取り出し層は、
前記マトリックス層の内部に形成されている不定形の多数の気孔を更に含むことを特徴とする、請求項1に記載の有機発光素子。 - 前記気孔の大きさは50〜900nmであることを特徴とする、請求項7に記載の有機発光素子。
- 前記マトリックス層において前記多数の気孔が占める面積は、前記マトリックス層の面積に対して2.5〜10.8%であることを特徴とする、請求項8に記載の有機発光素子。
- 前記第1基板とのエンキャプシュレーションのために前記第2電極の上部に前記第1基板と対向するように配置される第2基板を更に含むことを特徴とする、請求項1に記載の有機発光素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020140188494A KR101674066B1 (ko) | 2014-12-24 | 2014-12-24 | 유기발광소자 |
KR10-2014-0188494 | 2014-12-24 | ||
PCT/KR2015/013906 WO2016105029A1 (ko) | 2014-12-24 | 2015-12-18 | 유기발광소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018504747A true JP2018504747A (ja) | 2018-02-15 |
JP6592783B2 JP6592783B2 (ja) | 2019-10-23 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2017534577A Expired - Fee Related JP6592783B2 (ja) | 2014-12-24 | 2015-12-18 | 有機発光素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10153458B2 (ja) |
EP (1) | EP3240058B1 (ja) |
JP (1) | JP6592783B2 (ja) |
KR (1) | KR101674066B1 (ja) |
CN (1) | CN107112434B (ja) |
WO (1) | WO2016105029A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101775315B1 (ko) * | 2015-06-15 | 2017-09-05 | 스미또모 가가꾸 가부시키가이샤 | 유기 el 소자의 제조 방법 |
CN106129267B (zh) * | 2016-08-02 | 2018-01-12 | 武汉华星光电技术有限公司 | Oled薄膜封装结构及其制作方法 |
KR102640404B1 (ko) * | 2018-10-18 | 2024-02-26 | 삼성디스플레이 주식회사 | 표시장치 및 그 표시장치의 제조방법 |
CN109690808A (zh) * | 2018-12-05 | 2019-04-26 | 京东方科技集团股份有限公司 | 发光二极管及其制造方法、显示基板和显示面板 |
US11296296B2 (en) * | 2019-11-06 | 2022-04-05 | Applied Materials, Inc. | Organic light-emtting diode light extraction layer having graded index of refraction |
CN112799158B (zh) * | 2021-01-27 | 2022-04-08 | 福州大学 | 一种基于光波导的类谐振腔光提取结构 |
KR102661158B1 (ko) * | 2021-10-20 | 2024-04-26 | 선문대학교 산학협력단 | 내부 광 추출용 양자점 함유한 내부 산란층을 포함하는 유기발광소자 |
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2014
- 2014-12-24 KR KR1020140188494A patent/KR101674066B1/ko active IP Right Grant
-
2015
- 2015-12-18 WO PCT/KR2015/013906 patent/WO2016105029A1/ko active Application Filing
- 2015-12-18 CN CN201580071153.8A patent/CN107112434B/zh active Active
- 2015-12-18 EP EP15873556.3A patent/EP3240058B1/en active Active
- 2015-12-18 JP JP2017534577A patent/JP6592783B2/ja not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
JP6592783B2 (ja) | 2019-10-23 |
EP3240058A4 (en) | 2018-07-25 |
KR101674066B1 (ko) | 2016-11-08 |
CN107112434A (zh) | 2017-08-29 |
EP3240058A1 (en) | 2017-11-01 |
KR20160077947A (ko) | 2016-07-04 |
US20170338443A1 (en) | 2017-11-23 |
EP3240058B1 (en) | 2019-07-03 |
CN107112434B (zh) | 2018-11-23 |
US10153458B2 (en) | 2018-12-11 |
WO2016105029A1 (ko) | 2016-06-30 |
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