JP2018166205A - ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法 - Google Patents
ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000001312 dry etching Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000004140 cleaning Methods 0.000 title claims description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 51
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000011737 fluorine Substances 0.000 claims abstract description 31
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 31
- 239000007789 gas Substances 0.000 claims abstract description 30
- 150000001875 compounds Chemical class 0.000 claims abstract description 25
- 239000012265 solid product Substances 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 239000011261 inert gas Substances 0.000 claims abstract description 12
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 8
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000000047 product Substances 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract description 14
- 229910052715 tantalum Inorganic materials 0.000 abstract description 13
- 238000001035 drying Methods 0.000 abstract description 7
- 230000000052 comparative effect Effects 0.000 description 23
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 9
- 229910004166 TaN Inorganic materials 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 239000010955 niobium Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000012327 Ruthenium complex Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- XRURPHMPXJDCOO-UHFFFAOYSA-N iodine heptafluoride Chemical compound FI(F)(F)(F)(F)(F)F XRURPHMPXJDCOO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- -1 transition metal nitrides Chemical class 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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Abstract
【解決手段】含フッ素ハロゲン間化合物を含む処理ガスと特定金属元素を含む材料とを、0℃以上100℃以下の反応温度で接触させて、前記特定金属元素と含フッ素ハロゲン間化合物の反応生成物である固体生成物を得る第1工程と、不活性ガス雰囲気又は真空環境で、前記固体生成物を第1工程の反応温度よりも高温に加熱し、前記固体生成物を揮発させる第2工程と、を有し、前記特定金属元素が、Ru、Ta、Nbからなる群より選ばれる1種以上の元素であることを特徴とするドライエッチング方法を用いる。
【選択図】図1
Description
[実施例1−1]
まず、第1の工程として、試料4として予め重量を測定したRu粉末(平均粒径:45μm、純度99.5%)を設置した。ステージ3の温度は30℃であった。ここに、ClF3を、総流量を100sccmとして流通させた。チャンバー内圧力は50kPaとした。該ガスを5分間にわたり流通させた後、内部を真空排気した。つぎに、第2の工程として、圧力が100Pa以下であることを確認した後、ステージ3を50℃まで加熱し、10分後、ステージ3の加熱を終え、チャンバー内を窒素ガスで置換した。
第2工程において、圧力26.7kPaの窒素ガス流通下とした以外は実施例1−1と同様にして実施例1−2を行った。第1工程において、IF7、F2、HFを用いた以外は、実施例1−1と同様にして実施例1−3、比較例1−1、1−2を行った。第2工程を行わず、第1工程の終了後にチャンバー内を窒素ガスで置換して試料4を取り出して重量を測定する以外は、実施例1−1と同様にして比較例1−3を行った。
試料4として、TaN粉末(平均粒径:3μm、純度>90%)を用いる以外は、実施例1−1、1−3、比較例1−1、1−2と同様にして、実施例2−1、2−2、比較例2−1、2−2を行った。
試料4として、Ta粉末(平均粒径:10μm、純度99.9%)を用いる以外は、実施例1−1、1−3、比較例1−1、1−2と同様にして、実施例3−1、3−2、比較例3−1、3−2を行った。
試料4として、Nb粉末(平均粒径:45μm、純度99.9%)を用いる以外は、実施例1−1、1−3、比較例1−1、1−2と同様にして、実施例4−1、4−2、比較例4−1、4−2を行った。
試料4として、SiO2粉末(平均粒径:50μm、純度99.999%)、SiN粉末(平均粒径:45μm、純度>98%)、TiN粉末(平均粒径:45μm、純度99%)を用いる以外は、実施例1−1と同様にして、比較例5−1、5−2、5−3を行った。
2:チャンバー
3:ステージ
4:試料
5:ガス導入口
6:ガス排出ライン
7:圧力計
Claims (11)
- 含フッ素ハロゲン間化合物を含む処理ガスと特定金属元素を含む材料とを、0℃以上100℃以下の反応温度で接触させて、前記特定金属元素と含フッ素ハロゲン間化合物の反応生成物である固体生成物を得る第1工程と、
不活性ガス雰囲気又は真空環境で、前記固体生成物を第1工程の反応温度よりも高温の加熱温度に加熱し、前記固体生成物を揮発させる第2工程と、
を有し、
前記特定金属元素が、Ru、Ta及びNbからなる群より選ばれる1種以上の元素であることを特徴とするドライエッチング方法。 - 前記含フッ素ハロゲン間化合物が、ClF、BrF、ClF3、BrF3、IF3、ClF5、BrF5、IF5及びIF7からなる群より選ばれる1種以上の物質であることを特徴とする請求項1に記載のドライエッチング方法。
- 前記含フッ素ハロゲン間化合物物質がClF3又はIF7である請求項2に記載のドライエッチング方法。
- 前記特定金属元素を含む材料が、Ruの単体、Taの単体、Taの窒化物及びNbの単体からなる群より選ばれる1種以上の物質を含むことを特徴とする請求項1〜3のいずれか1項に記載のドライエッチング方法。
- 前記第1工程における反応温度が、15℃以上50℃以下であり、
前記第2工程における加熱温度が、50℃以上250℃以下である請求項1〜4のいずれか1項に記載のドライエッチング方法。 - 前記含フッ素ハロゲン間化合物物質がClF3又はIF7であり、
前記特定金属元素を含む材料が、Ruの単体、Taの単体、Taの窒化物及びNbの単体からなる群より選ばれる1種以上の物質を含み、
前記第1工程における反応温度が、0℃以上50℃以下であり、
前記第2工程において、前記固体生成物を第1工程の反応温度よりも5℃以上高い加熱温度に加熱することを特徴とする請求項1に記載のドライエッチング方法。 - 前記材料が、薄膜状であることを特徴とする請求項1〜6のいずれか1項に記載のドライエッチング方法。
- シリコン酸化物、シリコン窒化物又はチタン窒化物を含む材料と、前記特定金属を含む材料の両方を有する被エッチング対象に対して、請求項1〜7のいずれか1項に記載のドライエッチング方法を適用して、シリコン又はシリコン酸化物を含む材料に対して、前記特定金属元素を含む材料を選択的にエッチングすることを特徴とするドライエッチング方法。
- 半導体基板に、前記特定金属元素を含む層を形成する工程と、
前記特定金属元素を含む層上に、所定のパターンを有するマスクを形成する工程と、
前記特定金属元素を含む層に、請求項1〜8のいずれか1項に記載のドライエッチング方法を適用して、一部の前記特定金属元素を含む層を前記半導体基板から除去して前記パターンを転写する工程と、
を含むことを特徴とする半導体素子の製造方法。 - 前記半導体基板が、シリコン酸化物層を表面に有するシリコン基板であり、
前記シリコン酸化物層の上に前記特定金属元素を含む層を形成することを特徴とする請求項9に記載の半導体素子の製造方法。 - 含フッ素ハロゲン間化合物を含む処理ガスと、特定金属元素を含むチャンバー内付着物とを、0℃以上100℃以下の反応温度で接触させて前記特定金属元素と含フッ素ハロゲン間化合物の反応生成物である固体生成物を得る第1工程と、
不活性ガス雰囲気又は真空環境で、前記固体生成物を第1工程の反応温度よりも高温に加熱し、前記固体生成物を揮発させることにより、前記チャンバー内付着物をチャンバー内面より除去する第2工程と、
を有し、
前記特定金属元素が、Ru、Ta、Nbからなる群より選ばれる1種以上の元素であることを特徴とするチャンバークリーニング方法。
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