JP2018152405A - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
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Abstract
Description
4 ハロゲンランプハウス
5 フラッシュランプハウス
6 処理チャンバー
7 保持部
10 移載機構
65 熱処理空間
74 サセプタ
100 熱処理装置
101 インデクサ部
120 受渡ロボット
130,140 冷却部
131 第1クールチャンバー
135 酸素濃度計
141 第2クールチャンバー
150 搬送ロボット
160 熱処理部
170 搬送チャンバー
181,182,183,184,185 ゲートバルブ
230 アライメント部
231 アライメントチャンバー
250 ガス供給部
252 マスフローコントローラ
260 排気部
262 補助バルブ
263 メインバルブ
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (8)
- 基板に光を照射することによって該基板を加熱する熱処理方法であって、
未処理の基板を大気雰囲気に曝されたインデクサ部から前記インデクサ部に第1ゲートバルブを介して接続された冷却チャンバーに搬入する第1搬入工程と、
前記未処理の基板を前記冷却チャンバーから前記冷却チャンバーに第2ゲートバルブを介して接続された搬送チャンバーに搬出する第1搬出工程と、
前記未処理の基板を前記搬送チャンバーから前記搬送チャンバーに接続された処理チャンバーに搬送する搬送工程と、
前記処理チャンバーにて前記未処理の基板に加熱処理を行う熱処理工程と、
前記処理チャンバーにて加熱処理の行われた処理後の基板を前記搬送チャンバーを経由して前記冷却チャンバーに搬入する第2搬入工程と、
前記冷却チャンバーにて前記処理後の基板を冷却する冷却工程と、
前記冷却チャンバーにて冷却された前記処理後の基板を前記冷却チャンバーから前記インデクサ部に搬出する第2搬出工程と、
を備え、
前記冷却チャンバーには、第1供給流量または前記第1供給流量よりも大きな第2供給流量にて窒素ガスが供給され、
前記冷却チャンバーからは、第1排気流量または前記第1排気流量よりも大きな第2排気流量にて雰囲気が排気され、
少なくとも前記未処理の基板が前記冷却チャンバーに搬入されてから所定時間は前記冷却チャンバーに前記第2供給流量にて窒素ガスを供給するとともに、前記冷却チャンバーから前記第2排気流量にて排気を行うことを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記未処理の基板を前記冷却チャンバーから搬出する前に、前記冷却チャンバーに前記第1供給流量にて窒素ガスを供給するとともに、前記冷却チャンバーから前記第1排気流量にて排気を行うことを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記処理後の基板を前記冷却チャンバーから搬出する前に、前記冷却チャンバーに前記第2供給流量にて窒素ガスを供給するとともに、前記冷却チャンバーから前記第2排気流量にて排気を行うことを特徴とする熱処理方法。 - 請求項1から請求項3のいずれかに記載の熱処理方法において、
前記冷却チャンバー内の気圧は、前記搬送チャンバー内の気圧よりも低く、かつ、大気圧よりも高く維持されることを特徴とする熱処理方法。 - 基板に光を照射することによって該基板を加熱する熱処理装置であって、
大気雰囲気に曝されたインデクサ部と、
前記インデクサ部と第1ゲートバルブを介して接続され、基板を冷却する冷却チャンバーと、
前記冷却チャンバーと第2ゲートバルブを介して接続された搬送チャンバーと、
前記搬送チャンバーと接続され、基板に加熱処理を行う処理チャンバーと、
前記冷却チャンバーに第1供給流量または前記第1供給流量よりも大きな第2供給流量にて窒素ガスを供給するガス供給部と、
前記冷却チャンバーから第1排気流量または前記第1排気流量よりも大きな第2排気流量にて雰囲気を排気する排気部と、
前記ガス供給部による供給流量および前記排気部による排気流量を制御する制御部と、
を備え、
未処理の基板は前記インデクサ部から前記冷却チャンバー、前記搬送チャンバーの順に経由して前記処理チャンバーに搬送され、
前記処理チャンバーにて加熱処理の行われた処理後の基板は前記処理チャンバーから前記搬送チャンバー、前記冷却チャンバーの順に経由して前記インデクサ部に搬送され、
前記制御部は、少なくとも前記未処理の基板が前記冷却チャンバーに搬入されてから所定時間は前記冷却チャンバーに前記第2供給流量にて窒素ガスが供給されるとともに、前記冷却チャンバーから前記第2排気流量にて排気が行われるように前記ガス供給部および前記排気部を制御することを特徴とする熱処理装置。 - 請求項5記載の熱処理装置において、
前記制御部は、前記未処理の基板が前記冷却チャンバーから搬出される前に、前記冷却チャンバーに前記第1供給流量にて窒素ガスが供給されるとともに、前記冷却チャンバーから前記第1排気流量にて排気が行われるように前記ガス供給部および前記排気部を制御することを特徴とする熱処理装置。 - 請求項5または請求項6記載の熱処理装置において、
前記制御部は、前記処理後の基板が前記冷却チャンバーから搬出される前に、前記冷却チャンバーに前記第2供給流量にて窒素ガスが供給されるとともに、前記冷却チャンバーから前記第2排気流量にて排気を行われるように前記ガス供給部および前記排気部を制御することを特徴とする熱処理装置。 - 請求項5から請求項7のいずれかに記載の熱処理装置において、
前記冷却チャンバー内の気圧は、前記搬送チャンバー内の気圧よりも低く、かつ、大気圧よりも高く維持されることを特徴とする熱処理装置。
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