JP2018085408A - 減圧処理装置 - Google Patents
減圧処理装置 Download PDFInfo
- Publication number
- JP2018085408A JP2018085408A JP2016226894A JP2016226894A JP2018085408A JP 2018085408 A JP2018085408 A JP 2018085408A JP 2016226894 A JP2016226894 A JP 2016226894A JP 2016226894 A JP2016226894 A JP 2016226894A JP 2018085408 A JP2018085408 A JP 2018085408A
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- JP
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- Prior art keywords
- chamber
- wafer
- inert gas
- decompression
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011261 inert gas Substances 0.000 claims abstract description 57
- 230000006837 decompression Effects 0.000 claims abstract description 49
- 238000012545 processing Methods 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 11
- 238000009833 condensation Methods 0.000 abstract description 12
- 230000005494 condensation Effects 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 9
- 238000005530 etching Methods 0.000 description 38
- 238000001020 plasma etching Methods 0.000 description 15
- 238000000227 grinding Methods 0.000 description 14
- 239000012495 reaction gas Substances 0.000 description 12
- 239000000498 cooling water Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Public Health (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
10 チャンバ(減圧室)
12 搬入出口
17 開閉扉
20 下部電極ユニット
22 保持テーブル
30 上部電極ユニット
36 反応ガス供給源
37 不活性ガス供給源(不活性ガス供給手段)
50 減圧手段
60 制御手段
W ウエーハ
Claims (1)
- 減圧状態でウエーハを処理する減圧処理装置であって、
ウエーハを保持する保持テーブルと、該保持テーブルを配設する減圧室と、該減圧室にウエーハを搬入および搬出する搬入出口を開閉する開閉扉と、該減圧室に不活性ガスを供給する不活性ガス供給手段と、を備え、
該不活性ガス供給手段により該減圧室内に不活性ガスを供給し該減圧室を外気より陽圧にして該開閉扉を開き、該開閉扉が閉じられるまで該不活性ガス供給手段により該減圧室内に不活性ガスを供給し続け該減圧室内を乾燥状態で維持させる減圧処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016226894A JP2018085408A (ja) | 2016-11-22 | 2016-11-22 | 減圧処理装置 |
TW106134866A TW201834058A (zh) | 2016-11-22 | 2017-10-12 | 減壓處理裝置 |
SG10201708958QA SG10201708958QA (en) | 2016-11-22 | 2017-10-31 | Decompression processing apparatus |
US15/802,078 US10175588B2 (en) | 2016-11-22 | 2017-11-02 | Decompression processing apparatus |
CN201711088584.2A CN108091593A (zh) | 2016-11-22 | 2017-11-08 | 减压处理装置 |
KR1020170152858A KR20180057534A (ko) | 2016-11-22 | 2017-11-16 | 감압 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016226894A JP2018085408A (ja) | 2016-11-22 | 2016-11-22 | 減圧処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2018085408A true JP2018085408A (ja) | 2018-05-31 |
Family
ID=62146900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016226894A Pending JP2018085408A (ja) | 2016-11-22 | 2016-11-22 | 減圧処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10175588B2 (ja) |
JP (1) | JP2018085408A (ja) |
KR (1) | KR20180057534A (ja) |
CN (1) | CN108091593A (ja) |
SG (1) | SG10201708958QA (ja) |
TW (1) | TW201834058A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018133505A (ja) * | 2017-02-17 | 2018-08-23 | 株式会社ディスコ | プラズマエッチング方法 |
CN109085211B (zh) * | 2018-08-07 | 2021-03-26 | 亚翔***集成科技(苏州)股份有限公司 | 一种洁净室受害区检测方法 |
KR102515262B1 (ko) * | 2018-12-05 | 2023-03-29 | 가부시키가이샤 아루박 | 정전척, 진공처리장치 및 기판처리방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275382A (ja) * | 1992-01-28 | 1993-10-22 | Tokyo Electron Ltd | 真空装置 |
JP2011216591A (ja) * | 2010-03-31 | 2011-10-27 | Hitachi High-Technologies Corp | 試料の搬送処理方法 |
JP2016058544A (ja) * | 2014-09-09 | 2016-04-21 | 東京エレクトロン株式会社 | エッチング方法、記憶媒体及びエッチング装置 |
JP2016143785A (ja) * | 2015-02-03 | 2016-08-08 | 株式会社ディスコ | 減圧処理装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW492100B (en) * | 2000-03-13 | 2002-06-21 | Disco Corp | Semiconductor wafer processing apparatus |
JP3633854B2 (ja) | 2000-06-12 | 2005-03-30 | 株式会社ディスコ | 半導体ウェハの加工装置 |
JP4584821B2 (ja) * | 2005-12-14 | 2010-11-24 | 東京エレクトロン株式会社 | 真空処理装置及び帯状気流形成装置 |
JP4272230B2 (ja) * | 2006-12-22 | 2009-06-03 | 東京エレクトロン株式会社 | 減圧乾燥装置 |
JP4983745B2 (ja) * | 2008-08-01 | 2012-07-25 | 東京エレクトロン株式会社 | 圧力調整装置、これを用いた処理システム及び圧力調整方法 |
JP2014150109A (ja) * | 2013-01-31 | 2014-08-21 | Disco Abrasive Syst Ltd | 減圧処理装置 |
JP6649689B2 (ja) * | 2015-03-16 | 2020-02-19 | 株式会社ディスコ | 減圧処理装置及びウエーハの保持方法 |
-
2016
- 2016-11-22 JP JP2016226894A patent/JP2018085408A/ja active Pending
-
2017
- 2017-10-12 TW TW106134866A patent/TW201834058A/zh unknown
- 2017-10-31 SG SG10201708958QA patent/SG10201708958QA/en unknown
- 2017-11-02 US US15/802,078 patent/US10175588B2/en active Active
- 2017-11-08 CN CN201711088584.2A patent/CN108091593A/zh active Pending
- 2017-11-16 KR KR1020170152858A patent/KR20180057534A/ko not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275382A (ja) * | 1992-01-28 | 1993-10-22 | Tokyo Electron Ltd | 真空装置 |
JP2011216591A (ja) * | 2010-03-31 | 2011-10-27 | Hitachi High-Technologies Corp | 試料の搬送処理方法 |
JP2016058544A (ja) * | 2014-09-09 | 2016-04-21 | 東京エレクトロン株式会社 | エッチング方法、記憶媒体及びエッチング装置 |
JP2016143785A (ja) * | 2015-02-03 | 2016-08-08 | 株式会社ディスコ | 減圧処理装置 |
Also Published As
Publication number | Publication date |
---|---|
US20180143544A1 (en) | 2018-05-24 |
KR20180057534A (ko) | 2018-05-30 |
US10175588B2 (en) | 2019-01-08 |
SG10201708958QA (en) | 2018-06-28 |
CN108091593A (zh) | 2018-05-29 |
TW201834058A (zh) | 2018-09-16 |
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