JP2018067680A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2018067680A
JP2018067680A JP2016206964A JP2016206964A JP2018067680A JP 2018067680 A JP2018067680 A JP 2018067680A JP 2016206964 A JP2016206964 A JP 2016206964A JP 2016206964 A JP2016206964 A JP 2016206964A JP 2018067680 A JP2018067680 A JP 2018067680A
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JP
Japan
Prior art keywords
metal
alloy
semiconductor device
metal layer
joint
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016206964A
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JP6931869B2 (ja
Inventor
秀和 谷澤
Hidekazu Tanizawa
秀和 谷澤
佐藤　伸二
Shinji Sato
伸二 佐藤
史樹 加藤
Fumiki Kato
史樹 加藤
佐藤　弘
Hiroshi Sato
弘 佐藤
健一 孝井
Kenichi Takai
健一 孝井
弘樹 高橋
Hiroki Takahashi
弘樹 高橋
村上　善則
Yoshinori Murakami
善則 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
National Institute of Advanced Industrial Science and Technology AIST
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Nissan Motor Co Ltd
National Institute of Advanced Industrial Science and Technology AIST
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Publication date
Application filed by Nissan Motor Co Ltd, National Institute of Advanced Industrial Science and Technology AIST filed Critical Nissan Motor Co Ltd
Priority to JP2016206964A priority Critical patent/JP6931869B2/ja
Priority to US15/788,435 priority patent/US10461050B2/en
Publication of JP2018067680A publication Critical patent/JP2018067680A/ja
Application granted granted Critical
Publication of JP6931869B2 publication Critical patent/JP6931869B2/ja
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Abstract

【課題】簡便な構成を用いて、半導体チップ上の金属電極とこれに接続する金属配線との間の接合部の強度を、安定かつ強固にする。
【解決手段】半導体チップ１１０上に形成された金属電極１２０の表面に、前記金属電極１２０を構成する金属と異なる金属もしくは合金からなる金属層１３０を有し、前記金属層１３０に接合部１５０を介して金属配線１４０が接続された半導体装置であって、前記金属層１３０を構成する金属は、前記金属電極１２０を構成する金属と異なる金属もしくは合金であり、前記接合部１５０には、前記金属配線１４０よりも硬い合金領域を有する。
【選択図】図１

Description

本発明は、半導体素子の表面にある金属電極に、主に超音波接合法にて接合するワイヤ等金属配線の、接合強度を高める技術に関する。
半導体素子の表面にある金属電極とワイヤ等の金属配線との間を結線する方法として、金属配線を超音波接合法にて接合する方法がある。
例えば、特許文献１では、半導体素子の表面にある金属電極と金属ワイヤの端部とを接触させた状態で、専用の治具を使って所定の荷重を掛けながら、金属ワイヤを所定の超音波周波数で振動させる超音波接合法を開示している。接触部に短時間に局部的な摩擦熱を生じせしめ、金属同士を溶かして接合させるのである。この金属ワイヤの他端も半導体素子が実装された構造に属する他の電極などに、同様に接合されることとなる。
特開２００４−１４００７２号公報
上記したような結線構造において、使用環境の温度が変化すると、半導体チップと金属ワイヤとの熱膨張係数差によって超音波接合による接合部に応力が生じる。また、接合部は一見して均一に接合されているようではあっても、接合部の接合面内における接合強度にはバラつきが存在している。そのため、大きな温度変化を繰り返し与えると、接合面内で接合の弱い部分から徐々に剥離が進行してしまう。
温度変化を生じる環境であっても、所定の温度変化の範囲内であれば、半導体チップと金属ワイヤとの接合が完全に剥離し、断線に至ってしまう温度変化の繰り返し回数に対して、上記接合部がより多くの応力負荷回数に耐え得るように設計することは可能である。しかしながら、たとえば半導体チップの種類が変わる等、半導体装置が動作可能な温度範囲が従来よりも広くなった場合、このような結線構造では、結線（接合部）の接合が維持できる温度サイクル回数が低くなるか、あるいは所定の温度サイクル回数を確保できる温度範囲に上限ができてしまう。
本発明はかかる課題を解決するために考案されたもので、簡便な構成を用いて、半導体チップの金属電極と金属配線との間の接合部を、安定かつ強固に接合することができる半導体装置の接続構造を提供するものである。
本発明による半導体装置は、半導体チップと、前記半導体チップの表面に形成された金属電極と、前記金属電極の前記半導体チップと対向する面に形成された金属層と、前記金属層に接合部を介して接続された金属配線と、を備え、前記金属層を構成する金属は、前記金属電極を構成する金属と異なる金属もしくは合金であり、前記接合部は、前記金属配線よりも硬い合金領域を有することを特徴とする。
また、本発明による半導体装置は、半導体チップと、前記半導体チップの表面に形成された金属電極と、前記金属電極に接合部を介して接続された金属配線と、を備え、前記金属配線は、前記金属電極を構成する金属と異なる金属もしくは合金からなる金属層で被覆されており、前記接合部は、前記金属配線よりも硬い合金領域を有することを特徴とする。
かかる構成により、本発明による半導体装置は、半導体チップの金属電極と金属配線との間に金属層を配置して接合部を形成することにより、接合部の硬度を金属配線より高くすることができるため、半導体チップと金属配線とを安定かつ強固に接合することができ、結果として、繰り返される温度変化の範囲が広くなっても、断線に至るまでのサイクル数を十分に確保することができるのである。
また、上記した発明において、前記金属層がＺｎとＡｌを主体とした合金であり、前記金属配線がＡｇもしくはＡｌもしくはＡｕもしくはＣｕもしくはこれらを主体とした合金構成としてもよい。また、前記金属層がＡｕを主体とした合金であり、前記金属配線がＡｌもしくはＣｕもしくはこれらの１つを主体とした合金構成としてもよい。あるいは、前記金属層がＳｎもしくはこれを主体とした合金であり、前記金属配線がＡｇもしくはＡｕもしくはＣｕもしくはこれらを主体とした合金である、ように構成してもよい。
かかる構成により、接合部を構成する合金の成分がより最適化されるため、半導体チップと金属配線とをより安定かつ強固に接合することができるのである。
本発明の第１の実施形態による半導体装置の接合構造を説明する断面図である。 図１に示す接合構造の接合プロセスを説明する断面図である。 図１に示す接合構造の接合プロセスを説明する断面図である。 図１に示す接合構造の接合プロセスを説明する断面図である。 図１に示した接合構造の近傍を観察したＳＥＭ写真である。 本発明の第１の実施形態による接合構造におけるサンプルの正面写真である。 図６に示したサンプルにおける金属配線のシェア強度試験結果を示す表とグラフである。 本発明の第１の実施形態の変形例による接合構造の近傍を観察したＥＤＸ画像である。 本発明の第１の実施形態による半導体装置の実装構造の一例を説明する断面図である。 本発明の第２の実施形態による半導体装置の接合構造を説明する断面図である。 本発明の第２の実施形態による半導体装置の接合構造を説明する断面図である。
以下、本発明の第１の実施形態による半導体装置について、図１乃至図９を使って説明する。
図１は、本発明の第１の実施形態による半導体装置１００の接合構造を説明する断面図である。図中、１１０は半導体チップ、１２０は半導体チップ１１０上に形成された金属電極で、ここではＡｌもしくはＣｕもしくはＮｉである。１３０は金属電極１２０の表面に形成された金属層で、ここではＡｌＺｎ合金である。金属層１３０上に接合される１４０は、ここではＡｌ製でワイヤ形状をした金属配線であり、金属層１３０と金属配線１４０との接合界面には、金属層１３０と金属配線１４０との合金による接合部１５０が形成されている。
ここで、図１に示す半導体装置１００の接合構造の接合プロセスを説明する。まず、図２に示すように、半導体チップ１１０上に形成されたＡｌ製の金属電極１２０の上に、Ｚｎからなる金属層１３０ａを積層して積層構造体を形成する。このとき、金属層１３０ａの形成方法は、たとえば部分メッキもしくは部分蒸着などが例示できる。あるいは、金属電極１２０上の然るべき領域にＡｌＺｎ合金製の金属薄板１３０ａを配置してもよい。
次に、この積層構造体を４１９℃（すなわちＺｎの融点）以上に加熱すると、図３に示すように、Ｚｎ層にＡｌが２．４ａｔ％以上、３３ａｔ％以下の比率で混ざり合ったＺｎとＡｌの共晶合金が形成される。また、図２の工程の時点で、金属電極１２０の表面に、酸化防止等の目的で予めＡｇ薄膜もしくはＡｕ薄膜等を形成しておいてもよい。このような場合は、加熱して図３の状態になった時点で、金属電極１２０の表面のうちで金属層１３０と接している部分のＡｇもしくはＡｕの薄膜は消失する。
次に、図４に示すように、金属層１３０の上に専用の工具Ｔを用いて金属ワイヤ１４０を超音波ボンディングして接合構造を形成する。この時点では、接合部の接合面内における接合強度には、微視的にはバラつきが存在する。続いて、この接合構造を４１９℃以上に加熱すると、接合部１５０の接合界面は金属配線１４０側も含めて液相になる。このため、接合強度にバラつきのあった接合界面は消失し、室温に戻して固化すると、図１に示す接合部１５０となる。
図２乃至図４の接合プロセスで形成された接合部１５０は、上記した共晶合金を含むことにより、Ａｌ製の金属配線１４０よりも硬度が高くなるため、熱応力に対する前記合金領域の耐量は高まる。このとき、ＡｌＺｎ合金の表面には酸化皮膜が形成されるため、この合金が液相になっても容易には破れない。一方、超音波ボンディング法にて接合した領域では、この超音波振動により上記酸化皮膜を破って金属原子同士が結合しているので、この部分だけ選択的に合金化反応が進行する。
図５には、図１に示した接合構造の近傍を観察したＳＥＭ写真を示す。図５（ａ）は加熱前の状態を示しており、接合界面をよく見ると、接合している領域と、空隙を有する領域とが認められる。図５（ｂ）は加熱後の状態を示しており、これを見て明らかなように、加熱による溶融及び再凝固を経る合金化反応により、接合部１５０が金属配線１４０の内部にまたがって形成されている。この接合部１５０の硬度は金属配線４より高くなるため、急激な温度変化によって接合部１５０の接合界面に熱応力がかかっても、高い接続信頼性を確保することができる。
次に、本発明の第１の実施形態による半導体装置のサンプルにおける接合構造の接合強度を調べた結果を説明する。図６は、第１の実施形態による接合構造におけるサンプルの正面写真である。図中の番号は図１乃至図４で用いたものと同じものを示す。サンプルはＡｌを主体とした金属電極１２０の上に、厚み数十μｍのＡｌＺｎ合金の小片１３０ａを乗せ、これを一度溶かして接合する方法で金属層１３０を形成した。そして、その上面に超音波接合法にてＡｌ製ワイヤを接合し、接合部以外のワイヤはカットして、図６に示すように、４つの金属配線１４０を形成してシェア強度試験に供した。ここで、シェア強度試験は、図６の各金属配線１４０に横方向に押して破断した時点の荷重を計測した。なお、図中の右下の金属配線１４０上に引いた線分Ｌ−Ｌに沿って切った断面が上述の図５に対応する。
図７は、図６に示したサンプルにおける金属配線のシェア強度試験結果を示す表とグラフである。シェア強度試験は、接合部の加熱前の状態、加熱後の状態、及び加熱したサンプルを−４０℃と＋２５０℃の間を１０００サイクル経験させた後（以下、「温度サイクル後」と表記する。）の状態の３水準で実施した。なお、加熱前のサンプルでは１点が計測不能となり３個のみで評価した。
図７（ａ）から明らかなように、加熱前であってＡｌ製ワイヤを超音波接合したのみのサンプルでは、シェア強度が平均４７９ｇであったのに対し、加熱後の合金形成されたサンプルでは、平均値が１１７７ｇに向上している。また、温度サイクルを経験すると各部材の熱膨張係数差により接合領域には繰り返し応力がかかり、接合強度は低下した。このとき、加熱後のサンプルにおいても、温度サイクル後にはシェア強度の平均値が７２０ｇまで低下しているものの、従来例とほぼ同等の強度とみなすことができる加熱前のサンプルのシェア強度より高い値となっており、本発明の接合構造による効果が明確に確認できる。
なお、上記した実施形態では、金属配線１４０としてＡｌ製ワイヤを用いた場合を例示したが、金属配線１４０がＣｕもしくはＣｕを主体とする合金で構成されていても同様の構造を実現することはできる。一般的に、Ａｌ−Ｚｎ合金系にＣｕが混入すると液相線温度が低下し、液相になったＡｌ−Ｚｎ合金にＣｕは積極的に溶け込むので、接合部１５０は上記の実施形態と同様に合金化される。
また、金属層１３０がＡｕＧｅ合金等、Ａｕを主体とした金属であり、かつ、金属電極１２０及び金属配線１４０がＡｌもしくはＣｕもしくはこれらを主体とする合金である場合、あるいは、金属層１３０がＳｎを主体とする合金（たとえばＳＡＣハンダ）で、金属電極１２０及び金属配線１４０がＡｇもしくはＡｕもしくはＣｕもしくはこれらを主体とする合金である場合であってもよい。例えば、金属層１３０がＳＡＣハンダの場合、このような接合構造を２３０℃（すなわちＳｎの融点）程度に加熱するとＳｎが液相になるが、すぐに金属配線１４０の金属と金属間化合物を形成し、固相線が上昇する。このため、印加した温度において液相のＳｎは消失して接合部１５０が合金化される。これらの金属間化合物は概して硬度が高く、接合部１５０の信頼性を向上させる。
図８は、上記した金属層１３０をＡｕＧｅ合金に、金属配線１４０をＡｌ製にしたサンプルのＥＤＸ画像である。図８（ａ）は加熱前の状態であり、金属層１３０と金属配線１４０との間に合金領域は認められない。一方、図８（ｂ）は加熱後の状態であって、Ａｌ、Ａｕ、Ｇｅからなる合金化された接合部１５０が形成されている様子が確認できる。
図９は、本発明の第１の実施形態による半導体装置１００を適用した実装構造２００の一例を示す断面図である。図９に示すように、絶縁体等から構成される基板２１０上に、接着層２６０を介して図１に示した半導体装置１００がマウントされている。一方、基板２１０の上面における他の部分には、金属電極２２０が形成されている。この金属電極２２０は、この実装構造の外部端子とつながっており（図示せず）、外部の他の装置と電流や電気信号をやりとりする。
図９において、半導体装置１００の金属配線１４０は、その一端１４０ａが金属層１３０を介して金属電極１２０と接合されており、その他端１４０ｂは、金属層１３０と同様の金属層２３０を介して、金属電極２２０と接合されている。このとき、金属配線１４０と金属層２３０との間には、超音波接合された接合部２５０が形成されている。これにより、接合部２５０の接合界面を合金化して接合信頼性を高めることができる。
次に、本発明の第２の実施形態による半導体装置ついて、図１０を使って説明する。
図１０は、本発明の第２の実施形態による半導体装置３００の接合構造を説明する断面図である。この接合構造では、半導体チップ３１０の上面に形成された金属電極３２０の上に金属層を設ける代わりに、金属ワイヤ３４０の外面を予め金属層３３０で被覆しておくことを特徴とする。このような組み合わせで、金属層３３０が被覆された金属ワイヤ３４０を、第１の実施形態の場合と同様に金属電極３２０の上面に超音波ボンディングし、所定の温度に加熱して接合部３５０を合金化すると、合金化された接合部３５０は金属ワイヤよりも高い硬度となり、第１の実施形態の場合と同様の効果が得られる。
かかる構成によれば、半導体チップ３１０の金属電極３２０の上に、予め金属層３３０を設けるという前処理をせずとも、金属層３３０で被覆された金属ワイヤ３４０を用いることにより、接続信頼性の高い構造を実現できる。なお、この接合構造においても、上記に例示した金属の組み合わせが可能である。
次に、本発明の第３の実施形態による半導体装置ついて、図１１を使って説明する。
図１１は、本発明の第３の実施形態による半導体装置の接合構造４００を説明する断面図である。この接合構造では、第１の実施形態で使用した金属配線１４０に代えて、バンプ４４０を用い、さらに半導体チップ４１０と対面する位置に、金属電極４２１が形成された絶縁板４６０が配置されることを特徴とする。なお、金属電極４２１は、この接合構造の外部端子とつながっており（図示せず）、外部の他の装置と電流や電気信号をやりとりするように構成されている。
図１１に示す半導体チップ４１０には金属電極４２０が形成されており、バンプ４４０が金属層４３０を介して金属電極４２０と接合されている。このとき、金属層４３０とバンプ４４０との間には、第１の実施形態と同様に超音波接合後に加熱して合金化された接合部４５０が形成されている。一方、バンプ４４０の他方の面は、金属層４３１を介して絶縁版４６０に形成された金属電極４２１と接合されている。そして、金属層４２１とバンプ４４０との間にも、同様に超音波接合後に加熱して合金化された接合部４５１が形成されている。
かかる構成によれば、半導体チップ４１０の金属電極４２０と絶縁版４６０の金属電極４２１とが、バンプ４４０を介して接合されることとなり、省スペース化を図れるとともに位置決めが容易となる。また、バンプ４４０と金属電極４２０、４２１との間には、バンプ４４０より硬度が高い合金化された接合部４５０、４５１が形成されているため、温度サイクルを経験しても高い接続信頼性を確保できる。
以上、本発明による半導体装置の具体的な実施形態及びこれに基づく変形例を説明したが、本発明は必ずしもこれらに限定されるものではなく、本発明の特許請求の範囲に合致すれば、他の構成でも本発明の権利範囲に属する。
１００、３００ 半導体装置
１１０、３１０、４１０ 半導体チップ
１２０、２２０、３２０、４２０、４２１ 金属電極
１３０、２３０、３３０、４３０、４３１ 金属層
１４０、３４０、４４０ 金属配線
１５０、２５０、３５０、４５０、４５１ 接合部
２００、４００ 実装構造
２１０、４６０ 絶縁体（基板）

Claims (5)

  1. 半導体チップと、前記半導体チップの表面に形成された金属電極と、前記金属電極の前記半導体チップと対向する面に形成された金属層と、前記金属層に接合部を介して接続された金属配線と、を備える半導体装置であって、
    前記金属層を構成する金属は、前記金属電極を構成する金属と異なる金属もしくは合金であり、
    前記接合部には、前記金属配線よりも硬い合金領域を有することを特徴とする半導体装置。
  2. 半導体チップと、前記半導体チップの表面に形成された金属電極と、前記金属電極に接合部を介して接続された金属配線と、を備える半導体装置であって、
    前記金属配線は、前記金属電極を構成する金属と異なる金属もしくは合金からなる金属層で被覆されており、
    前記接合部は、前記金属配線よりも硬い合金領域を有することを特徴とする半導体装置。
  3. 前記金属層がＺｎとＡｌを主とした合金であり、前記金属配線がＡｇもしくはＡｌもしくはＡｕもしくはＣｕもしくはこれら１つを主とした合金であることを特徴とする請求項１又は２に記載の半導体装置。
  4. 前記金属層がＡｕを主とした合金であり、前記金属配線がＡｌもしくはＣｕもしくはこれらを主体とした合金である、ことを特徴とする請求項１又は２に記載の半導体装置。
  5. 前記金属層がＳｎもしくはこれを主とした合金であり、前記金属配線がＡｇもしくはＡｕもしくはＣｕもしくはこれら１つを主とした合金であることを特徴とする請求項１又は２に記載の半導体装置。


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