JP2018056384A - デバイスウエーハの加工方法 - Google Patents

デバイスウエーハの加工方法 Download PDF

Info

Publication number: JP2018056384A
Authority: JP; Japan
Prior art keywords: device wafer; polishing; processing method; grinding; gettering layer
Prior art date: 2016-09-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP2016191955A

Other languages

English (en)

Japanese (ja)

Inventor

法久有福

Norihisa Arifuku

法久有福

金子　智洋

Tomohiro Kaneko

智洋金子

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Disco Corp

Original Assignee

Disco Abrasive Systems Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2016-09-29

Filing date

2016-09-29

Publication date

2018-04-05

2016-09-29 Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd

2016-09-29 Priority to JP2016191955A priority Critical patent/JP2018056384A/ja

2017-08-15 Priority to TW106127540A priority patent/TW201824380A/zh

2017-09-13 Priority to CN201710820875.XA priority patent/CN107887266A/zh

2017-09-13 Priority to KR1020170117184A priority patent/KR20180035671A/ko

2018-04-05 Publication of JP2018056384A publication Critical patent/JP2018056384A/ja

Status Pending legal-status Critical Current

Links

238000003672 processing method Methods 0.000 title claims abstract description 52
238000005247 gettering Methods 0.000 claims abstract description 90
239000006061 abrasive grain Substances 0.000 claims abstract description 41
239000007788 liquid Substances 0.000 claims abstract description 32
239000002245 particle Substances 0.000 claims abstract description 27
238000005498 polishing Methods 0.000 claims description 147
230000015572 biosynthetic process Effects 0.000 abstract description 3
235000012431 wafers Nutrition 0.000 description 151
238000005452 bending Methods 0.000 description 21
238000012986 modification Methods 0.000 description 13
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238000010586 diagram Methods 0.000 description 12
239000010419 fine particle Substances 0.000 description 8
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
238000000034 method Methods 0.000 description 7
239000010949 copper Substances 0.000 description 6
239000002184 metal Substances 0.000 description 6
229910052751 metal Inorganic materials 0.000 description 6
230000001681 protective effect Effects 0.000 description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
238000004140 cleaning Methods 0.000 description 5
238000005520 cutting process Methods 0.000 description 5
238000007517 polishing process Methods 0.000 description 5
229910052710 silicon Inorganic materials 0.000 description 5
239000010703 silicon Substances 0.000 description 5
238000003746 solid phase reaction Methods 0.000 description 4
238000002679 ablation Methods 0.000 description 3
238000004519 manufacturing process Methods 0.000 description 3
239000000377 silicon dioxide Substances 0.000 description 3
239000012086 standard solution Substances 0.000 description 3
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239000011230 binding agent Substances 0.000 description 2
230000000052 comparative effect Effects 0.000 description 2
238000004590 computer program Methods 0.000 description 2
238000011109 contamination Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
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235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
238000000926 separation method Methods 0.000 description 2
239000000126 substance Substances 0.000 description 2
208000032368 Device malfunction Diseases 0.000 description 1
241001050985 Disco Species 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
238000012790 confirmation Methods 0.000 description 1
239000000470 constituent Substances 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
229910000365 copper sulfate Inorganic materials 0.000 description 1
ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
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238000009826 distribution Methods 0.000 description 1
239000012535 impurity Substances 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
238000007561 laser diffraction method Methods 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
239000000463 material Substances 0.000 description 1
239000004745 nonwoven fabric Substances 0.000 description 1
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238000003825 pressing Methods 0.000 description 1
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229920005989 resin Polymers 0.000 description 1
238000000790 scattering method Methods 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
229910010271 silicon carbide Inorganic materials 0.000 description 1
239000007787 solid Substances 0.000 description 1
238000003860 storage Methods 0.000 description 1
238000006467 substitution reaction Methods 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
238000004876 x-ray fluorescence Methods 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Mechanical Treatment Of Semiconductor (AREA)
Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Grinding Of Cylindrical And Plane Surfaces (AREA)

JP2016191955A 2016-09-29 2016-09-29 デバイスウエーハの加工方法 Pending JP2018056384A (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP2016191955A JP2018056384A (ja)	2016-09-29	2016-09-29	デバイスウエーハの加工方法
TW106127540A TW201824380A (zh)	2016-09-29	2017-08-15	元件晶圓的加工方法
CN201710820875.XA CN107887266A (zh)	2016-09-29	2017-09-13	器件晶片的加工方法
KR1020170117184A KR20180035671A (ko)	2016-09-29	2017-09-13	디바이스 웨이퍼의 가공 방법

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2016191955A JP2018056384A (ja)	2016-09-29	2016-09-29	デバイスウエーハの加工方法

Publications (1)

Publication Number	Publication Date
JP2018056384A true JP2018056384A (ja)	2018-04-05

Family

ID=61780618

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2016191955A Pending JP2018056384A (ja)	2016-09-29	2016-09-29	デバイスウエーハの加工方法

Country Status (4)

Country	Link
JP (1)	JP2018056384A (zh)
KR (1)	KR20180035671A (zh)
CN (1)	CN107887266A (zh)
TW (1)	TW201824380A (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2009094326A (ja) *	2007-10-10	2009-04-30	Disco Abrasive Syst Ltd	ウェーハの研削方法
WO2015002199A1 (ja) *	2013-07-02	2015-01-08	富士紡ホールディングス株式会社	研磨パッド及びその製造方法
JP2015046550A (ja) *	2013-08-29	2015-03-12	株式会社ディスコ	研磨パッドおよびウエーハの加工方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2010225987A (ja) *	2009-03-25	2010-10-07	Disco Abrasive Syst Ltd	ウェーハの研磨方法及び研磨パッド
JP5963537B2 (ja) *	2012-05-23	2016-08-03	株式会社ディスコ	シリコンウエーハの加工方法
JP5916513B2 (ja) *	2012-05-23	2016-05-11	株式会社ディスコ	板状物の加工方法

2016
- 2016-09-29 JP JP2016191955A patent/JP2018056384A/ja active Pending
2017
- 2017-08-15 TW TW106127540A patent/TW201824380A/zh unknown
- 2017-09-13 KR KR1020170117184A patent/KR20180035671A/ko not_active Application Discontinuation
- 2017-09-13 CN CN201710820875.XA patent/CN107887266A/zh active Pending

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2009094326A (ja) *	2007-10-10	2009-04-30	Disco Abrasive Syst Ltd	ウェーハの研削方法
WO2015002199A1 (ja) *	2013-07-02	2015-01-08	富士紡ホールディングス株式会社	研磨パッド及びその製造方法
JP2015046550A (ja) *	2013-08-29	2015-03-12	株式会社ディスコ	研磨パッドおよびウエーハの加工方法

Also Published As

Publication number	Publication date
CN107887266A (zh)	2018-04-06
KR20180035671A (ko)	2018-04-06
TW201824380A (zh)	2018-07-01

Legal Events

Date	Code	Title	Description
2019-07-25	A621	Written request for application examination	Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190725
2020-05-20	A977	Report on retrieval	Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200520
2020-06-02	A131	Notification of reasons for refusal	Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200602
2020-07-29	A521	Request for written amendment filed	Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200729
2020-11-04	A131	Notification of reasons for refusal	Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201104
2021-05-11	A02	Decision of refusal	Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210511

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