JP2018043895A5 - - Google Patents

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JP2018043895A5
JP2018043895A5 JP2016177914A JP2016177914A JP2018043895A5 JP 2018043895 A5 JP2018043895 A5 JP 2018043895A5 JP 2016177914 A JP2016177914 A JP 2016177914A JP 2016177914 A JP2016177914 A JP 2016177914A JP 2018043895 A5 JP2018043895 A5 JP 2018043895A5
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Japan
Prior art keywords
thick film
film resistor
ruthenium dioxide
major axis
shape
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JP2016177914A
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Japanese (ja)
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JP6740829B2 (en
JP2018043895A (en
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2.二酸化ルテニウム粉末
本実施形態の二酸化ルテニウム粉末は、棒状の形状を有し、長軸方向に対して垂直な断面の最小径(短径a)が100nm以下であり、長軸方向における最大径(長径b)と、断面における最小径(短径a)との比(長径b/短径a)が2以上である(図3参照)。上記のような形状を有する二酸化ルテニウムを厚膜抵抗体の導電粒子として用いた場合、従来の球状の二酸化ルテニウムを用いた厚膜抵抗体と比較して、電流雑音を低減することができる。これは、厚膜抵抗体に使用する導電粉末の形状を球状ではなく、棒状にすることにより、導電粉末同士の接触点が減り、厚膜抵抗体の電流雑音が低減されると考えられる。なお、長径b/短径aは、特に限定されないが、例えば、25以下である。
2. Ruthenium dioxide powder The ruthenium dioxide powder of the present embodiment has a rod-like shape, the minimum diameter (minor axis a) of the cross section perpendicular to the major axis direction is 100 nm or less, and the maximum diameter (major axis) in the major axis direction The ratio (major axis b / minor axis a) between b) and the minimum diameter (minor axis a) in the cross section is 2 or more (see FIG. 3). When ruthenium dioxide having the above shape is used as the conductive particles of the thick film resistor, current noise can be reduced as compared with a thick film resistor using conventional spherical ruthenium dioxide. This is considered to be because the contact point between the conductive powders is reduced by reducing the shape of the conductive powder used for the thick film resistor to a rod shape instead of a spherical shape, and the current noise of the thick film resistor is reduced. The major axis b / minor axis a is not particularly limited, but is, for example, 25 or less.

[厚膜抵抗体の作製と評価]
以下、実施例7〜9及び比較例4〜6は、実施例1又は比較例1で製造した二酸化ルテニウム粉末を使用して厚膜抵抗体を作製し、その抵抗値と電流雑音を評価した。表2に、それぞの実施例及び比較例の厚膜抵抗体ペーストの組成と厚膜抵抗体作製時の膜厚を示す。また、図5に測定した抵抗値と電流雑音の結果をまとめて示す。
[Production and evaluation of thick film resistors]
Hereinafter, in Examples 7 to 9 and Comparative Examples 4 to 6, a thick film resistor was produced using the ruthenium dioxide powder produced in Example 1 or Comparative Example 1, and the resistance value and current noise were evaluated. Table 2 shows the film thickness of the composition and thick film resistor during production of their respective examples and comparative examples of thick film resistor paste. FIG. 5 collectively shows the measured resistance values and current noise results.

JP2016177914A 2016-09-12 2016-09-12 Ruthenium dioxide powder, method for producing the same, thick film resistor paste, and thick film resistor Expired - Fee Related JP6740829B2 (en)

Priority Applications (1)

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JP2016177914A JP6740829B2 (en) 2016-09-12 2016-09-12 Ruthenium dioxide powder, method for producing the same, thick film resistor paste, and thick film resistor

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JP2016177914A JP6740829B2 (en) 2016-09-12 2016-09-12 Ruthenium dioxide powder, method for producing the same, thick film resistor paste, and thick film resistor

Publications (3)

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JP2018043895A JP2018043895A (en) 2018-03-22
JP2018043895A5 true JP2018043895A5 (en) 2019-08-08
JP6740829B2 JP6740829B2 (en) 2020-08-19

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Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1597941A (en) * 1967-12-20 1970-06-29
US4420422A (en) * 1982-11-01 1983-12-13 E. I. Du Pont De Nemours & Co. Method for making high surface area bismuth-containing pyrochlores
JPS6124101A (en) * 1984-07-13 1986-02-01 住友金属鉱山株式会社 Thick film conductive paste
JP2007302497A (en) * 2006-05-10 2007-11-22 Sumitomo Metal Mining Co Ltd Ruthenium oxide powder and its production method
CN103429537B (en) * 2011-06-21 2015-04-22 住友金属矿山株式会社 Ruthenium oxide powder, composition for thick film resistor elements using same, and thick film resistor element
JP5831055B2 (en) * 2011-09-02 2015-12-09 住友金属鉱山株式会社 Plate-like ruthenium oxide powder and method for producing the same, and thick film resistor composition using the same

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