JP2018024927A - 成膜装置、およびそれに用いるガス吐出部材 - Google Patents
成膜装置、およびそれに用いるガス吐出部材 Download PDFInfo
- Publication number
- JP2018024927A JP2018024927A JP2016158706A JP2016158706A JP2018024927A JP 2018024927 A JP2018024927 A JP 2018024927A JP 2016158706 A JP2016158706 A JP 2016158706A JP 2016158706 A JP2016158706 A JP 2016158706A JP 2018024927 A JP2018024927 A JP 2018024927A
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- Prior art keywords
- gas discharge
- gas
- substrate
- film
- processed
- Prior art date
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- Granted
Links
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- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 28
- 230000007423 decrease Effects 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 11
- 230000001965 increasing effect Effects 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 12
- 238000000151 deposition Methods 0.000 abstract description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 220
- 239000010408 film Substances 0.000 description 131
- 238000009826 distribution Methods 0.000 description 29
- 230000002093 peripheral effect Effects 0.000 description 24
- 238000010586 diagram Methods 0.000 description 13
- 238000004088 simulation Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000009471 action Effects 0.000 description 5
- 238000005121 nitriding Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910008486 TiSix Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- C23C16/14—Deposition of only one other metal element
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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Abstract
【解決手段】成膜装置100は、ウエハWが収容される処理容器1と、処理容器1内でウエハが載置されるサセプタ2と、サセプタ2に載置されたウエハWに対向配置され、処理ガスをサセプタ2上のウエハWに向けて吐出するシャワーヘッド10と、シャワーヘッド10とサセプタ2との間にプラズマを生成して処理ガスを励起させる高周波電源41とを有し、プラズマにより励起された処理ガスによりウエハW上に所定の膜を成膜する。シャワーヘッド10は、サセプタ2に対向するガス吐出面17を有し、ガス吐出面17には複数のガス吐出孔15が形成され、ガス吐出面17における複数のガス吐出孔15が形成されたガス吐出孔形成領域18は、ガス吐出面17のウエハWに対応する領域よりも小さい成膜装置。
【選択図】図1
Description
以下の説明においては、プラズマCVDによりTiを含む金属膜としてTi膜を成膜する場合を例にとって説明する。
TiCl4ガス流量:1〜200mL/min(sccm)
Arガス流量:100〜10000mL/min(sccm)
H2ガス流量:1〜10000mL/min(sccm)
の範囲が好ましい。
TiCl4ガス流量:3〜50mL/min(sccm)
Arガス流量:100〜5000mL/min(sccm)
H2ガス流量:5〜5000mL/min(sccm)
である。
また、H2ガス/Arガスの流量比は、0.001〜50が好ましい。
図14は、ナローシャワーヘッドを用いてTi膜を成膜した場合における、成膜時間と、ウエハWのセンターおよび外周の膜厚および平均膜厚との関係を示す図であり、(a)はSiO2膜上、(b)はSi基板上の結果である。図7と対比すると明らかなように、従来シャワーヘッドを用いた場合は成膜時間が長くなるとセンターと外周の膜厚差が広がるのに対し、ナローシャワーヘッドを用いることにより、成膜時間が長くなってもセンターと外周の膜厚差が広がらないことがわかる。また、図15は、ナローシャワーヘッドを用いてTi膜を成膜した場合における、各成膜時間での径方向の膜厚分布を示す図であり、(a)はSiO2膜上、(b)はSi基板上の結果である。図8と対比すると明らかなように、従来のシャワーヘッドを用いた場合はウエハの外周部分で膜厚が急激に薄くなるのに対し、ナローシャワーヘッドを用いることによりウエハ外周部分の膜厚が従来シャワーヘッドよりも厚くなることがわかる。
例えば、本例においては、原料ガス、還元ガスを同時に供給して成膜する場合について示したが、成膜ガスと還元ガスとの供給を、Arガス等の不活性ガスによるパージを挟んで交互に繰り返してプラズマを生成した状態で原子層堆積法(ALD法)により成膜する場合も含まれる。
2;サセプタ
5;ヒーター
10;シャワーヘッド
12;シャワープレート
15;ガス吐出孔
17;ガス吐出面
18;ガス吐出孔形成領域
20;ガス供給機構
21;TiCl4ガス供給源
22;Arガス供給源
23;H2ガス供給源
41;高周波電源
43;インピーダンス調整回路
53;排気装置
60;制御部
100;成膜装置
110;Si基板
111;層間絶縁膜
112;コンタクトホール
113;Ti膜
114;TiSix膜
W;半導体ウエハ
Claims (14)
- 被処理基板が収容される処理容器と、
前記処理容器内で被処理基板が載置される載置台と、
前記載置台に載置された被処理基板に対向配置され、処理ガスを前記載置台上の被処理基板に向けて吐出するガス吐出部材と、
前記ガス吐出部材と前記載置台との間にプラズマを生成して前記処理ガスを励起させるプラズマ生成手段と
を有し、プラズマにより励起された処理ガスにより被処理基板上に所定の膜を成膜する成膜装置であって、
前記ガス吐出部材は、前記載置台に対向するガス吐出面を有し、前記ガス吐出面には、複数のガス吐出孔が形成され、
前記ガス吐出面における前記複数のガス吐出孔が形成されたガス吐出孔形成領域は、前記ガス吐出面の被処理基板に対応する領域よりも小さいことを特徴とする成膜装置。 - 前記ガス吐出面における、前記ガス吐出孔形成領域と、前記被処理基板に対応する領域とは同心状をなしており、前記ガス吐出孔形成領域の直径は、前記被処理基板に対応する領域の直径よりも小さいことを特徴とする請求項1に記載の成膜装置。
- 前記ガス吐出孔形成領域の直径の、前記被処理基板に対応する領域の直径に対する割合は、66.6〜93.4%であることを特徴とする請求項2に記載の成膜装置。
- 前記ガス吐出孔形成領域の直径の、前記被処理基板に対応する領域の直径に対する割合は、73.3〜86.7%であることを特徴とする請求項2に記載の成膜装置。
- 前記ガス吐出部材から吐出される処理ガスは、原料ガスであるTiCl4ガス、還元ガスであるH2ガス、プラズマ生成ガスであるArガスであり、被処理基板上にTiを含む金属膜を成膜することを特徴とする請求項1から請求項4のいずれか1項に記載の成膜装置。
- 前記TiCl4ガスが前記プラズマにより励起されて、活性種として主にTiCl3が生成されることを特徴とする請求項5に記載の成膜装置。
- 前記載置台上の被処理基板を加熱する加熱機構をさらに有し、成膜の際に、前記加熱機構により、被処理基板が350〜500℃の温度に加熱されることを特徴とする請求項6に記載の成膜装置。
- 成膜の際に、前記ガス吐出部材から吐出されるガス流量が、
TiCl4ガス:1〜200mL/min(sccm)、
H2ガス:1〜10000mL/min(sccm)、
Arガス流量:100〜10000mL/min(sccm)
であることを特徴とする請求項6または請求項7に記載の成膜装置。 - 前記載置台に接続される伝送路に設けられたインピーダンス調整回路をさらに有し、該インピーダンス調整回路により、プラズマから見た前記伝送路のインピーダンスを低下させてプラズマから基板に流れる電流を増加させ、Arイオンを高エネルギー化することを特徴とする請求項5から請求項8のいずれか1項に記載の成膜装置。
- 前記プラズマ生成手段は、前記載置台を下部電極とし、ガス吐出部材を上部電極として、前記上部電極と前記下部電極との間に高周波電界を形成することによりプラズマを生成することを特徴とする請求項1から請求項9のいずれか1項に記載の成膜装置。
- 処理容器内において、載置台に載置された被処理基板に対向配置され、処理ガスを前記載置台上の被処理基板に向けて吐出し、前記載置台との間にプラズマが生成された状態で、前記処理ガスにより被処理基板上に所定の膜が成膜されるようにしたガス吐出部材であって、
前記載置台に対向するガス吐出面を有し、前記ガス吐出面には、複数のガス吐出孔が形成され、
前記ガス吐出面における前記複数のガス吐出孔が形成されたガス吐出孔形成領域は、前記ガス吐出面の被処理基板に対応する領域よりも小さいことを特徴とするガス吐出部材。 - 前記ガス吐出面における、前記ガス吐出孔形成領域と、前記被処理基板に対応する領域とは同心状をなしており、前記ガス吐出孔形成領域の直径は、前記被処理基板に対応する領域の直径よりも小さいことを特徴とする請求項11に記載のガス吐出部材。
- 前記ガス吐出孔形成領域の直径の、前記被処理基板に対応する領域の直径に対する割合は、66.6〜93.4%であることを特徴とする請求項12に記載のガス吐出部材。
- 前記ガス吐出孔形成領域の直径の、前記被処理基板に対応する領域の直径に対する割合は、73.3〜86.7%であることを特徴とする請求項12に記載のガス吐出部材。
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CN111218667A (zh) * | 2018-11-23 | 2020-06-02 | 北京北方华创微电子装备有限公司 | 一种气体分配装置的表面处理方法及沉积设备 |
JP7023826B2 (ja) * | 2018-12-07 | 2022-02-22 | 株式会社ニューフレアテクノロジー | 連続成膜方法、連続成膜装置、サセプタユニット、及びサセプタユニットに用いられるスペーサセット |
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US20230134061A1 (en) * | 2020-03-19 | 2023-05-04 | Lam Research Corporation | Showerhead purge collar |
JP7504004B2 (ja) * | 2020-11-13 | 2024-06-21 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07307334A (ja) * | 1994-05-12 | 1995-11-21 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2008274343A (ja) * | 2007-04-27 | 2008-11-13 | Tokyo Electron Ltd | Ti膜の成膜方法および記憶媒体 |
JP2010021446A (ja) * | 2008-07-11 | 2010-01-28 | Tokyo Electron Ltd | プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
JP2015124397A (ja) * | 2013-12-25 | 2015-07-06 | 東京エレクトロン株式会社 | コンタクト層の形成方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004035971A (ja) * | 2002-07-05 | 2004-02-05 | Ulvac Japan Ltd | 薄膜製造装置 |
JP3574651B2 (ja) * | 2002-12-05 | 2004-10-06 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
KR100735938B1 (ko) * | 2004-04-09 | 2007-07-06 | 동경 엘렉트론 주식회사 | Ti막 및 TiN막의 성막 방법, 접촉 구조체 및 컴퓨터 판독 가능한 기억 매체 |
CN102089867B (zh) * | 2008-07-11 | 2013-11-27 | 东京毅力科创株式会社 | 等离子体处理装置 |
JP2013048227A (ja) | 2011-07-25 | 2013-03-07 | Tokyo Electron Ltd | シャワーヘッド装置及び成膜装置 |
JP5933394B2 (ja) * | 2011-09-22 | 2016-06-08 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
WO2014178160A1 (ja) * | 2013-04-30 | 2014-11-06 | 東京エレクトロン株式会社 | 成膜装置 |
US10100408B2 (en) * | 2014-03-03 | 2018-10-16 | Applied Materials, Inc. | Edge hump reduction faceplate by plasma modulation |
-
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07307334A (ja) * | 1994-05-12 | 1995-11-21 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2008274343A (ja) * | 2007-04-27 | 2008-11-13 | Tokyo Electron Ltd | Ti膜の成膜方法および記憶媒体 |
JP2010021446A (ja) * | 2008-07-11 | 2010-01-28 | Tokyo Electron Ltd | プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
JP2015124397A (ja) * | 2013-12-25 | 2015-07-06 | 東京エレクトロン株式会社 | コンタクト層の形成方法 |
Cited By (4)
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JP2019175975A (ja) * | 2018-03-28 | 2019-10-10 | 東京エレクトロン株式会社 | ボロン系膜の成膜方法および成膜装置 |
JP7049883B2 (ja) | 2018-03-28 | 2022-04-07 | 東京エレクトロン株式会社 | ボロン系膜の成膜方法および成膜装置 |
WO2020105444A1 (ja) * | 2018-11-21 | 2020-05-28 | 東京エレクトロン株式会社 | 処理方法及び処理装置 |
WO2022050136A1 (ja) * | 2020-09-07 | 2022-03-10 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
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US20180047541A1 (en) | 2018-02-15 |
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US11069512B2 (en) | 2021-07-20 |
CN107723682B (zh) | 2019-11-29 |
TW201817912A (zh) | 2018-05-16 |
JP6796431B2 (ja) | 2020-12-09 |
CN107723682A (zh) | 2018-02-23 |
KR101991574B1 (ko) | 2019-06-20 |
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