JP2018010950A - シリコン窒化膜の成膜方法 - Google Patents
シリコン窒化膜の成膜方法 Download PDFInfo
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- JP2018010950A JP2018010950A JP2016138213A JP2016138213A JP2018010950A JP 2018010950 A JP2018010950 A JP 2018010950A JP 2016138213 A JP2016138213 A JP 2016138213A JP 2016138213 A JP2016138213 A JP 2016138213A JP 2018010950 A JP2018010950 A JP 2018010950A
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- forming
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- nitride film
- silicon nitride
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 40
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 238000000151 deposition Methods 0.000 title abstract description 9
- 239000000460 chlorine Substances 0.000 claims abstract description 109
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 101
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 100
- 238000001179 sorption measurement Methods 0.000 claims abstract description 95
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 227
- 238000000034 method Methods 0.000 claims description 90
- 238000012545 processing Methods 0.000 claims description 76
- 230000015572 biosynthetic process Effects 0.000 claims description 41
- 238000005121 nitriding Methods 0.000 claims description 36
- 238000010926 purge Methods 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 3
- -1 chlorine ions Chemical class 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 4
- 230000001546 nitrifying effect Effects 0.000 abstract 1
- 230000008569 process Effects 0.000 description 46
- 238000000926 separation method Methods 0.000 description 41
- 238000010586 diagram Methods 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 12
- 238000002474 experimental method Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 230000005764 inhibitory process Effects 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000002401 inhibitory effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101000735417 Homo sapiens Protein PAPPAS Proteins 0.000 description 1
- 102100034919 Protein PAPPAS Human genes 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
Description
前記基板に塩素含有ガスを供給し、該塩素含有ガスを前記窪みの最上部から所定深さまでの所定領域に物理吸着させ、該所定領域に非吸着サイトを形成する工程と、
前記基板にシリコン含有ガスを供給し、前記窪み内の前記所定領域以外に残存した底部を含む前記吸着サイトに前記シリコン含有ガスを吸着させ、前記アンモニア含有ガスと前記シリコン含有ガスとの反応によりシリコン窒化膜を成膜する工程と、を有する。
図1に、本発明の実施形態に係るシリコン窒化膜の成膜方法を実施するのに好適な成膜装置の一例の概略縦断面図を示す。また、図2に、本発明の実施形態に係るシリコン窒化膜の成膜方法を実施するのに好適な成膜装置の一例の概略平面図を示す。なお、図2では、説明の便宜上、天板11の描画を省略している。
次に、本発明の実施形態に係るシリコン窒化膜の成膜方法について説明する。まず、上述の成膜装置を用いないプロセスにも適用可能な、本実施形態に係るシリコン窒化膜の成膜方法の原理について説明する。但し、説明は、上述の成膜装置との関係を述べながら説明する。
2 回転テーブル
11 天板
12 容器本体
31、32、33 処理ガスノズル
34 ガス吐出孔
41、42 分離ガスノズル
80 プラズマ発生部
83 アンテナ
84 整合器
85 高周波電源
90 筐体
95 ファラデーシールド
97 スリット
98 開口部
120 制御部
121 記憶部
130 窪み
Claims (10)
- 表面に窪みが形成された基板にアンモニア含有ガスを供給し、前記窪みの表面を窒化して前記窪み内に吸着サイトを形成する工程と、
前記基板に塩素含有ガスを供給し、該塩素含有ガスを前記窪みの最上部から所定深さまでの所定領域に物理吸着させ、該所定領域に非吸着サイトを形成する工程と、
前記基板にシリコン含有ガスを供給し、前記窪み内の前記所定領域以外に残存した底部を含む前記吸着サイトに前記シリコン含有ガスを吸着させ、前記アンモニア含有ガスと前記シリコン含有ガスとの反応によりシリコン窒化膜を成膜する工程と、を有するシリコン窒化膜の成膜方法。 - 前記物理吸着は、塩素イオンの水素原子に対する電気陰性度の高さを利用した吸着である請求項1に記載のシリコン窒化膜の成膜方法。
- 前記窪み内に吸着サイトを形成する工程は、プラズマを用いて行われる請求項1又は2に記載のシリコン窒化膜の成膜方法。
- 前記所定領域に非吸着サイトを形成する工程は、プラズマを用いずに行われる請求項1乃至3のいずれか一項に記載のシリコン窒化膜の成膜方法。
- 前記窪み内に吸着サイトを形成する工程と、前記所定領域に非吸着サイトを形成する工程と、前記シリコン窒化膜を成膜する工程は、順次繰り返される請求項1乃至4のいずれか一項に記載のシリコン窒化膜の成膜方法。
- 前記窪み内に吸着サイトを形成する工程と、前記所定領域に非吸着サイトを形成する工程と、前記シリコン窒化膜を成膜する工程は、前記窪みを前記シリコン窒化膜で充填するまで順次繰り返される請求項5に記載のシリコン窒化膜の成膜方法。
- 前記所定領域に非吸着サイトを形成する工程と前記シリコン窒化膜を成膜する工程との間、及び前記シリコン窒化膜を成膜する工程と前記窪み内に吸着サイトを形成する工程との間には、前記基板にパージガスを供給する第1及び第2のパージ工程をそれぞれ更に有する請求項5又は6に記載のシリコン窒化膜の成膜方法。
- 前記窪み内に吸着サイトを形成する工程と、前記所定領域に非吸着サイトを形成する工程と、前記シリコン窒化膜を成膜する工程は、処理室内に設けられた回転テーブル上に前記基板を周方向に沿って載置し、該回転テーブルの回転方向に沿って離間して配置され、前記窪み内に吸着サイトを形成する工程を実施可能な窒化領域、前記所定領域に非吸着サイトを形成する工程を実施可能な非吸着サイト形成領域、及び前記シリコン窒化膜を成膜する工程を実施可能な吸着反応領域を、前記基板が前記回転テーブルの回転により順次通過することにより行われる請求項7に記載のシリコン窒化膜の成膜方法。
- 前記非吸着サイト形成領域と前記吸着反応領域との間、及び前記吸着反応領域と前記窒化領域との間には、前記第1及び第2のパージ工程を実施可能な第1及び第2のパージ領域がそれぞれ設けられ、前記基板が前記回転テーブルの回転により前記窒化領域、前記非吸着サイト形成領域、前記第1のパージ領域、前記吸着反応領域、前記第2のパージ領域を順次通過することにより、前記窪み内に吸着サイトを形成する工程、前記所定領域に非吸着サイトを形成する工程、前記第1のパージ工程、前記シリコン窒化膜を成膜する工程、前記第2のパージ工程が順次行われる請求項8に記載のシリコン窒化膜の成膜方法。
- 前記非吸着サイトが形成される前記所定領域の前記所定深さは、前記塩素含有ガスの流量及び前記回転テーブルの回転速度の調整により調整される請求項8又は9に記載のシリコン窒化膜の成膜方法。
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