JP2018003122A - Vapor deposition apparatus and evaporation source - Google Patents

Vapor deposition apparatus and evaporation source Download PDF

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JP2018003122A
JP2018003122A JP2016133685A JP2016133685A JP2018003122A JP 2018003122 A JP2018003122 A JP 2018003122A JP 2016133685 A JP2016133685 A JP 2016133685A JP 2016133685 A JP2016133685 A JP 2016133685A JP 2018003122 A JP2018003122 A JP 2018003122A
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Prior art keywords
container
evaporation
evaporation source
opening end
vapor deposition
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JP6641242B2 (en
JP2018003122A5 (en
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博之 田村
Hiroyuki Tamura
博之 田村
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Canon Tokki Corp
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Canon Tokki Corp
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Priority to JP2016133685A priority Critical patent/JP6641242B2/en
Priority to KR1020170084996A priority patent/KR102182869B1/en
Priority to CN201710539978.9A priority patent/CN107574411B/en
Priority to CN202110723236.8A priority patent/CN113416930A/en
Publication of JP2018003122A publication Critical patent/JP2018003122A/en
Publication of JP2018003122A5 publication Critical patent/JP2018003122A5/ja
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Publication of JP6641242B2 publication Critical patent/JP6641242B2/en
Priority to KR1020200154533A priority patent/KR102279411B1/en
Priority to KR1020210091561A priority patent/KR102458193B1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus and an evaporation source capable of preventing a film deposition material from being reflected or reevaporated to the evaporation source and deposited on an evaporation source peripheral member even when the opening end face of the evaporation port located most outside tilts toward the outside in the longer direction of the evaporation source.SOLUTION: A vapor deposition apparatus includes an evaporation source having a container 1 for containing a film deposition material, a plurality of evaporation ports 2a, 2b arranged along the longer direction of the container 1, and an evaporation source peripheral member 3 installed around the container 1. A pair of outside evaporation ports 2a among a plurality of the evaporation ports 2a, 2b that is arranged most outside has each an opening end face tilting toward the outside in the longer direction of the container 1. The container 1 and the evaporation source peripheral member 3 are arranged inside the virtual plane including the opening end face without protruding from the virtual plane.SELECTED DRAWING: Figure 2

Description

本発明は、蒸着装置及び蒸発源に関するものである。   The present invention relates to a vapor deposition apparatus and an evaporation source.

本出願人は自己の先願に係る特願２０１４−２６５９８１号において、蒸発源に設けられた複数の蒸発口部のうち、外側に位置する蒸発口部の開口端面を、蒸発源の長手方向外側に向くように傾斜させることで、蒸発口部を長手方向外側に広がって配設させなくても膜厚分布が均一で、成膜されたパターンにおける膜ボケが抑制された蒸着膜を得られるようにした真空蒸着装置を提案している。   In Japanese Patent Application No. 2014-265981 relating to the prior application of the present applicant, among the plurality of evaporation ports provided in the evaporation source, the opening end surface of the evaporation port located outside is set to the outside in the longitudinal direction of the evaporation source. It is possible to obtain a vapor deposition film in which the film thickness distribution is uniform and the film blurring in the formed pattern is suppressed even if the evaporation port portion is not disposed so as to extend outward in the longitudinal direction. We propose a vacuum evaporation system.

ところで、上述のように蒸発源Ａの蒸発口部Ｂの開口端面を蒸発源の長手方向外側に向くように傾斜させた場合、この傾斜する開口端面から放出される蒸発した成膜材料の飛散範囲が蒸発源側に傾き、図１に図示したように、蒸発源Ａの両端部（図１中Ｃで示す範囲）にかかってしまう問題がある（一般的に蒸発口部から放出される成膜材料の放出角度分布は、開口の法線方向を０°とする余弦則に従い、開口端面を含む仮想平面より前方に飛散する。）。   By the way, when the opening end surface of the evaporation port B of the evaporation source A is inclined so as to face the outside in the longitudinal direction of the evaporation source as described above, the scattering range of the evaporated film forming material released from the inclined opening end surface. 1 is inclined to the evaporation source side, and as shown in FIG. 1, there is a problem that it is applied to both ends of the evaporation source A (the range indicated by C in FIG. 1) (generally film formation discharged from the evaporation port portion). The material discharge angle distribution follows the cosine law with the normal direction of the opening being 0 °, and scatters forward from the virtual plane including the opening end face.

蒸発源に直接成膜材料の飛散範囲がかかる場合、蒸発源は加熱されているため、飛散した成膜材料は、蒸発源で反射若しくは再蒸発して基板上に到達し、膜厚分布に影響を与える可能性がある。   When the deposition source is directly exposed to the evaporation source, the evaporation source is heated, so the scattered deposition material is reflected or re-evaporated by the evaporation source and reaches the substrate, affecting the film thickness distribution. May give.

また、蒸発源を冷却部材で覆っていた場合には、成膜材料の飛散範囲にかかっている冷却部材上に成膜材料が堆積することになる。冷却部材上の堆積物は再蒸発しにくく、徐々に成長し、いずれは蒸発口部の開口を塞ぐ可能性がある。   Further, when the evaporation source is covered with the cooling member, the film forming material is deposited on the cooling member over the range where the film forming material is scattered. Deposits on the cooling member are difficult to re-evaporate and grow gradually, and eventually may block the opening of the evaporation port.

本発明は、上述のような現状に鑑みてなされたもので、最も外側に位置する蒸発口部の開口端面が蒸発源の長手方向外側に向くように傾斜した構成でも、成膜材料の蒸発源への反射若しくは再蒸発及び蒸発源周辺部材への堆積を防止できる蒸着装置及び蒸発源を提供するものである。   The present invention has been made in view of the current situation as described above, and the evaporation source of the film forming material can be used even when the opening end surface of the outermost evaporation port portion is inclined so as to face the outside in the longitudinal direction of the evaporation source. It is an object of the present invention to provide an evaporation apparatus and an evaporation source that can prevent reflection or re-evaporation on the substrate and accumulation on a member around the evaporation source.

成膜材料が収容される容器と、前記容器の長手方向に沿って設けられる複数の蒸発口部と、前記容器の周囲に設けられる蒸発源周辺部材とを有する蒸発源を備え、前記蒸発口部から前記成膜材料を放出することで、基板上に蒸着膜を形成するように構成した蒸着装置であって、前記複数の蒸発口部のうち最も外側に設けられた一対の外側蒸発口部は、夫々前記容器の長手方向外側に向くように傾斜する開口端面を有し、前記容器及び前記蒸発源周辺部材が、前記開口端面を含む仮想平面より外側に突出せず前記仮想平面の内側に収まるように構成されていることを特徴とする蒸着装置に係るものである。   An evaporation source having a container for storing a film-forming material, a plurality of evaporation ports provided along the longitudinal direction of the container, and an evaporation source peripheral member provided around the container; A deposition apparatus configured to form a deposition film on a substrate by discharging the film forming material from a pair of outer evaporation port portions provided on the outermost side among the plurality of evaporation port portions; Each of the container and the evaporation source peripheral member does not protrude outward from the virtual plane including the opening end face and does not protrude outside the virtual plane. It is related with the vapor deposition apparatus characterized by the above.

本発明は上述のように構成したから、最も外側に位置する蒸発口部の開口端面が蒸発源の長手方向外側に向くように傾斜した構成でも、成膜材料の蒸発源への反射若しくは再蒸発及び蒸発源周辺部材への堆積を防止できる蒸着装置及び蒸発源となる。   Since the present invention is configured as described above, even when the opening end surface of the evaporation port located on the outermost side is inclined so as to face the outside in the longitudinal direction of the evaporation source, the deposition material is reflected or re-evaporated to the evaporation source. And an evaporation apparatus and an evaporation source that can prevent deposition on the evaporation source peripheral member.

背景技術の概略説明図である。It is a schematic explanatory drawing of background art. 本実施例の拡大概略説明断面図である。It is an expansion outline explanatory sectional view of a present Example. 本実施例の概略説明断面図である。It is a schematic explanatory sectional drawing of a present Example. 本実施例の要部の概略図である。It is the schematic of the principal part of a present Example. 別例１の拡大概略説明断面図である。10 is an enlarged schematic explanatory cross-sectional view of another example 1. FIG. 別例２の概略説明断面図である。10 is a schematic explanatory sectional view of another example 2. FIG. 別例３の拡大概略説明断面図である。10 is an enlarged schematic explanatory cross-sectional view of another example 3. FIG. 別例４の概略説明正面図である。10 is a schematic explanatory front view of another example 4. FIG. 別例４の概略説明側面図である。10 is a schematic side view of another example 4. FIG. 蒸着装置の概略説明正面図である。It is a schematic explanatory front view of a vapor deposition apparatus. 蒸着装置の概略説明側面図である。It is a schematic explanatory side view of a vapor deposition apparatus.

好適と考える本発明の実施形態を、図面に基づいて本発明の作用を示して簡単に説明する。   An embodiment of the present invention which is considered to be suitable will be briefly described with reference to the drawings showing the operation of the present invention.

容器１の蒸発口部２ａ・２ｂから蒸発した成膜材料を放出して基板に蒸着膜を形成する。   The evaporated film forming material is discharged from the evaporation ports 2a and 2b of the container 1 to form a deposited film on the substrate.

この際、容器１及び加熱部材や冷却部材等の蒸発源周辺部材３が、外側蒸発口部２ａの開口端面を含む仮想平面より外側に突出せず、即ち、外側蒸発口部２ａの開口端面から放出される成膜材料がかかる領域に容器１及び蒸発源周辺部材３が存在しないから、外側蒸発口部２ａの開口端面から放出される成膜材料の容器１への反射若しくは再蒸発及び蒸発源周辺部材３への堆積を防止することができる。   At this time, the container 1 and the evaporation source peripheral member 3 such as the heating member and the cooling member do not protrude outward from the virtual plane including the opening end surface of the outer evaporation port portion 2a, that is, from the opening end surface of the outer evaporation port portion 2a. Since the container 1 and the evaporation source peripheral member 3 are not present in the region where the film forming material to be discharged is present, the film material released from the opening end surface of the outer evaporation port 2a is reflected or re-evaporated and the evaporation source. Deposition on the peripheral member 3 can be prevented.

本発明の具体的な実施例について図面に基づいて説明する。   Specific embodiments of the present invention will be described with reference to the drawings.

本実施例は図１０，１１に図示したような蒸着装置に本発明を適用した例である。この蒸着装置は、減圧雰囲気を保持する真空槽20内で基板21に薄膜を形成させるために、成膜材料を放出する蒸発源25が基板21と対向する位置に配設され、蒸発源25から放出された蒸発粒子の蒸発レートをモニタする膜厚モニタ22と、真空槽20外に設けたモニタした蒸発粒子の量を膜厚に換算する膜厚計23と、換算された膜厚が所望の膜厚になるように成膜材料の蒸発レートを制御するために蒸発源25を加熱するヒータ用電源24とを設けている。また、基板21と蒸発源25とを相対的に移動させる相対移動機構が設けられており、相対移動しながら成膜を行うことで、基板全面に渡って均一な膜厚の蒸着膜を形成することができる。   In this embodiment, the present invention is applied to a vapor deposition apparatus as shown in FIGS. In this vapor deposition apparatus, in order to form a thin film on the substrate 21 in a vacuum chamber 20 that maintains a reduced-pressure atmosphere, an evaporation source 25 that discharges a film forming material is disposed at a position facing the substrate 21, and the evaporation source 25 A film thickness monitor 22 that monitors the evaporation rate of the emitted evaporated particles, a film thickness meter 23 that converts the amount of monitored evaporated particles provided outside the vacuum chamber 20 into a film thickness, and the converted film thickness is desired A heater power source 24 for heating the evaporation source 25 is provided to control the evaporation rate of the film forming material so as to obtain a film thickness. In addition, a relative movement mechanism that relatively moves the substrate 21 and the evaporation source 25 is provided, and by performing film formation while relatively moving, a vapor deposition film having a uniform film thickness is formed over the entire surface of the substrate. be able to.

また、前記容器１と前記容器１に対向する位置に配設された基板とは、前記容器１の長手方向と直交する方向に相対的に移動し、蒸発口部２から前記成膜材料を放出することで、基板上に蒸着膜を形成するように構成している。   Further, the container 1 and the substrate disposed at a position facing the container 1 move relatively in a direction orthogonal to the longitudinal direction of the container 1, and discharge the film forming material from the evaporation port 2. By doing so, a vapor deposition film is formed on the substrate.

本実施例においては、成膜材料が収容される容器１と、この容器１に容器１の長手方向に沿って複数設けられる蒸発口部２ａ・２ｂとから成る蒸発源25を採用している。   In this embodiment, an evaporation source 25 including a container 1 for storing a film forming material and a plurality of evaporation ports 2 a and 2 b provided in the container 1 along the longitudinal direction of the container 1 is employed.

本実施例の前記容器１及びこの容器１の周囲に設けられる蒸発源周辺部材３は、前記開口端面を含む仮想平面より外側に突出せず前記仮想平面の内側に収まるように構成されている。   The container 1 of this embodiment and the evaporation source peripheral member 3 provided around the container 1 are configured so as not to protrude outward from the virtual plane including the opening end face and to be inside the virtual plane.

また、容器１には気化した成膜材料が拡散する拡散部４が設けられ、この拡散部４の容器１の長手方向における幅Ｗ１は蒸発口部２ａ・２ｂの配設幅Ｗ２より狭い幅に設定されている。本実施例においては、容器１の下部を材料収容部５とし、上部を拡散部４とした一体型の容器１を採用している。   Further, the container 1 is provided with a diffusion part 4 in which the vaporized film forming material diffuses, and the width W1 of the diffusion part 4 in the longitudinal direction of the container 1 is narrower than the arrangement width W2 of the evaporation port parts 2a and 2b. Is set. In the present embodiment, an integrated container 1 in which the lower part of the container 1 is the material accommodating part 5 and the upper part is the diffusion part 4 is adopted.

前記複数の蒸発口部２のうち最も外側に設けられた一対の外側蒸発口部２ａは、夫々前記容器１の長手方向外側に向くように傾斜する開口端面を有している。   The pair of outer evaporation ports 2 a provided on the outermost side of the plurality of evaporation ports 2 have opening end surfaces that are inclined so as to face the outer side in the longitudinal direction of the container 1.

また、外側蒸発口部２ａ以外の他の蒸発口部２ｂは、外側蒸発口部２ａと同様に容器１の長手方向外側に向くように傾斜する開口端面を有する構成としても良いし、長手方向内側を向くように傾斜する開口端面を有する構成としても良いし、容器１に垂直に立設された構成としても良い。   Further, the other evaporation port portion 2b other than the outer evaporation port portion 2a may have an opening end surface that is inclined so as to face the outer side in the longitudinal direction of the container 1 like the outer evaporation port portion 2a. It is good also as a structure which has the opening end surface which inclines so that it may face, and is good also as a structure erected perpendicularly | vertically to the container 1. FIG.

本実施例においては、最も内側の一組を除く他の蒸発口部２ｂを外側蒸発口部２ａと同様の構成とし、最も内側の一組の蒸発口部２ｂを容器１に垂直に立設した構成としている。   In the present embodiment, the other evaporation port portions 2b except the innermost set are configured in the same manner as the outer evaporation port portion 2a, and the innermost set of evaporation port portions 2b are erected vertically to the container 1. It is configured.

本実施例の蒸発源周辺部材３は、平面視矩形状の容器１の周囲を囲むように設けられる角環状の部材であり、具体的には、容器１の加熱部材及び冷却部材である。   The evaporation source peripheral member 3 of the present embodiment is an angular ring member provided so as to surround the periphery of the rectangular container 1 in plan view, and specifically, a heating member and a cooling member of the container 1.

本実施例においては、図２，３に図示したように、蒸発源周辺部材３として内側から順に、容器１を加熱するヒータ６と、容器１及びヒータ６からの熱を反射するリフレクタ７と、前記容器１、ヒータ６及びリフレクタ７からの熱を周囲に拡散させないための水冷板８と、容器１、ヒータ６、リフレクタ７及び水冷板８を囲む防着板９とを設けている。また、本実施例においては防着板９は、ヒータ６，リフレクタ７及び水冷板８の上面も覆う形状としている。更に、防着板９は、蒸発口部２ａ・２ｂの配設領域を除き、容器１の上面全体も覆う形状としている。   In this embodiment, as illustrated in FIGS. 2 and 3, a heater 6 that heats the container 1 in order from the inside as the evaporation source peripheral member 3, and a reflector 7 that reflects the heat from the container 1 and the heater 6, A water-cooled plate 8 for preventing the heat from the container 1, the heater 6 and the reflector 7 from diffusing to the surroundings, and a deposition plate 9 surrounding the container 1, the heater 6, the reflector 7 and the water-cooled plate 8 are provided. Further, in the present embodiment, the deposition preventing plate 9 has a shape that also covers the upper surfaces of the heater 6, the reflector 7, and the water cooling plate 8. Furthermore, the adhesion prevention board 9 is made into the shape which covers the whole upper surface of the container 1 except the arrangement | positioning area | region of the evaporation port parts 2a * 2b.

容器１は、容器１の長手方向端面から外側蒸発口部２ａまでの距離が、容器１の両端部及び前記蒸発源周辺部材３が前記仮想平面の外側に位置しない長さとなるように構成されている。   The container 1 is configured such that the distance from the longitudinal end surface of the container 1 to the outer evaporation port 2a is such that both ends of the container 1 and the evaporation source peripheral member 3 are not located outside the virtual plane. Yes.

具体的には、容器１の長手方向端面から外側蒸発口部２ａまでの長さ、外側蒸発口部２ａの開口端面の傾斜角度、蒸発源周辺部材３の厚みを適宜設定し、容器１及び蒸発源周辺部材３が前記仮想平面の内側に収まるように構成されている。ここで、外側蒸発口部２ａの開口端面の傾斜角度は３０°〜４５°に設定するのが好ましい。   Specifically, the length from the longitudinal end surface of the container 1 to the outer evaporation port portion 2a, the inclination angle of the opening end surface of the outer evaporation port portion 2a, and the thickness of the evaporation source peripheral member 3 are set as appropriate. The source peripheral member 3 is configured to fit inside the virtual plane. Here, the inclination angle of the opening end face of the outer evaporation port portion 2a is preferably set to 30 ° to 45 °.

例えば、図４に図示したように、容器１の長手方向端面から外側蒸発口部２ａまでの長さＭ１、蒸発源周辺部材３の端面から外側蒸発口部２ａまでの長さＭ２及び蒸発源周辺部材３の厚みＭ３は、外側蒸発口部２ａの開口端面の傾斜角度θ、外側蒸発口部２ａの（容器１の上面から突出する）先端長Ｌ２を用い、以下のようにして決定することができる。なお、図中Ｌ１は外側蒸発口部２ａの全体長である。   For example, as shown in FIG. 4, the length M1 from the longitudinal end surface of the container 1 to the outer evaporation port portion 2a, the length M2 from the end surface of the evaporation source peripheral member 3 to the outer evaporation port portion 2a, and the periphery of the evaporation source The thickness M3 of the member 3 can be determined as follows using the inclination angle θ of the opening end surface of the outer evaporation port portion 2a and the tip length L2 of the outer evaporation port portion 2a (projecting from the upper surface of the container 1). it can. In the figure, L1 is the entire length of the outer evaporation port portion 2a.

Ｍ１＝Ｌ２×ｓｉｎθ
Ｍ２＝Ｌ２÷ｓｉｎθ
Ｍ３＝Ｍ２−Ｍ１
例えば、Ｌ２が４０ｍｍ、θが４０°の場合、Ｍ１は２５．７ｍｍ、Ｍ２は６２．２ｍｍ、Ｍ３は３６．５ｍｍとなる。 M1 = L2 × sin θ
M2 = L2 ÷ sinθ
M3 = M2-M1
For example, when L2 is 40 mm and θ is 40 °, M1 is 25.7 mm, M2 is 62.2 mm, and M3 is 36.5 mm.

また、蒸発源周辺部材３は、図２においては容器１の端部の側面及び端面を囲む構成としているが、容器１の端部の上面まで囲む構成としても良い。例えば、図５に図示した別例１のように、ヒータ６、リフレクタ７及び防着板９が容器１の端部の上面も覆う構成としても良い。   In addition, the evaporation source peripheral member 3 is configured to surround the side surface and the end surface of the end portion of the container 1 in FIG. 2, but may be configured to surround the upper surface of the end portion of the container 1. For example, as in another example 1 illustrated in FIG. 5, the heater 6, the reflector 7, and the deposition preventing plate 9 may cover the upper surface of the end portion of the container 1.

また、容器１の構成として上述したような一体型に限らず、例えば図６に図示した別例２の蒸発源25のように、材料収容部５と、拡散部４とが連通部12を介して設けられ、前記材料収容部５と前記拡散部４の２つを合わせて容器１とする分離型としても良い。この場合、拡散部４の幅Ｗ１を前記仮想平面から容器１等が外側に突出しないように狭くすれば、材料収容部５の幅Ｗ３は前記仮想平面の内側に収めるために短くする必要がないから、拡散部４の幅Ｗ１より広くしてより多くの材料を収容できる構成を実現でき、また、材料収容部５の基板温度への影響を抑制できる等、一層良好に成膜を行える構成となる。   Further, the configuration of the container 1 is not limited to the integrated type as described above, and the material storage unit 5 and the diffusion unit 4 are connected via the communication unit 12 as in the evaporation source 25 of the second example illustrated in FIG. It is good also as a separation type | mold which makes the container 1 combining the said material accommodating part 5 and the said spreading | diffusion part 4 together. In this case, if the width W1 of the diffusing portion 4 is narrowed so that the container 1 or the like does not protrude outward from the virtual plane, the width W3 of the material accommodating portion 5 does not need to be shortened so as to be inside the virtual plane. Therefore, it is possible to realize a structure that can accommodate a larger amount of material by making it wider than the width W1 of the diffusion part 4, and can suppress the influence of the material storage part 5 on the substrate temperature, and can form a film more satisfactorily. Become.

また、本実施例においては、蒸発口部２ａ・２ｂの容器１の長手方向外側に向くように傾斜する開口端面の傾斜角度を同一としているが、外側蒸発口部２ａの開口端面の傾斜角度が最も大きくなるように、各開口端面の傾斜角度を異なる角度に設定しても良い。また、その際、蒸発口部２ａ・２ｂの開口端面の傾斜角度は、これより内側の蒸発口部２ｂの開口端面の傾斜角度以上の角度となるように設定しても良い。   Further, in this embodiment, the inclination angle of the opening end surface of the evaporation port portions 2a and 2b that is inclined so as to face the outside in the longitudinal direction of the container 1 is the same, but the inclination angle of the opening end surface of the outer evaporation port portion 2a is the same. You may set the inclination angle of each opening end surface to a different angle so that it may become the largest. At this time, the inclination angle of the opening end faces of the evaporation port portions 2a and 2b may be set to be equal to or larger than the inclination angle of the opening end surface of the evaporation port portion 2b on the inner side.

この場合、内側の蒸発口部２ｂから放出した蒸発粒子が外側の蒸発口部２ａ・２ｂに付着し再蒸発しない構成とすることができる。また、外側の蒸発口部２ａ・２ｂの方が基板端までの距離が長く、より遠くまで蒸発粒子を到達させる必要があるが、外側程傾斜角度を大きくすることで外側の蒸発口部２ａ・２ｂから放出される蒸発粒子をより遠くまで到達させることが可能となる。   In this case, the vaporized particles released from the inner evaporation port portion 2b may adhere to the outer evaporation port portions 2a and 2b and not re-evaporate. Further, the outer evaporation port portions 2a and 2b have a longer distance to the substrate end, and it is necessary to make the evaporation particles reach farther. However, the outer evaporation port portions 2a and 2b It becomes possible to make the evaporated particles emitted from 2b reach farther.

また、図７に図示した別例３のように、外側蒸発口部２ａだけでなく、容器１の長手方向外側に向くように傾斜する開口端面を有する他の蒸発口部２ｂに対しても夫々、容器１及びこの容器１の周囲に設けられる蒸発源周辺部材３が、各蒸発口部２ａ・２ｂの開口端面を含む仮想平面より外側に突出せず前記仮想平面の内側に収まるように構成するとより一層効果が大きい。   Further, as in another example 3 illustrated in FIG. 7, not only the outer evaporation port portion 2 a but also the other evaporation port portion 2 b having an opening end surface inclined so as to face the outer side in the longitudinal direction of the container 1. The container 1 and the evaporation source peripheral member 3 provided around the container 1 are configured so as not to protrude outside the virtual plane including the opening end surfaces of the respective evaporation port portions 2a and 2b and to be inside the virtual plane. The effect is even greater.

また、一体型の容器１若しくは分離型の容器１の上部を、図８及び図９に図示した別例４のように、左右両端上部若しくは前後両端上部または左右両端上部及び前後両端上部を所定角度で面取りした構成としても良い。図８の場合、容器１の長手方向の蒸発源周辺部材３への材料付着を、図９の場合、蒸発源短手方向前後の蒸発源周辺部材３への材料付着を一層防止できる構成となる。   Further, the upper part of the integrated container 1 or the separate container 1 is set at a predetermined angle with respect to the upper left and right ends or the upper ends of the front and rear ends or the upper ends of the left and right ends and the upper ends of the front and rear ends as shown in FIG. 8 and FIG. A chamfered configuration may be used. In the case of FIG. 8, the material adheres to the evaporation source peripheral member 3 in the longitudinal direction of the container 1, and in the case of FIG. 9, the material adheres to the evaporation source peripheral member 3 before and after the evaporation source short direction. .

なお、本発明は、本実施例に限られるものではなく、各構成要件の具体的構成は適宜設計し得るものである。   Note that the present invention is not limited to this embodiment, and the specific configuration of each component can be designed as appropriate.

１ 容器
２ａ・２ｂ 蒸発口部
３ 蒸発源周辺部材
４ 拡散部
５ 材料収容部
６ ヒータ
７ リフレクタ
８ 水冷板
９ 防着板 DESCRIPTION OF SYMBOLS 1 Container 2a, 2b Evaporation port part 3 Evaporation source peripheral member 4 Diffusion part 5 Material accommodating part 6 Heater 7 Reflector 8 Water cooling board 9 Adhesion board

Claims (16)

成膜材料が収容される容器と、前記容器の長手方向に沿って設けられる複数の蒸発口部と、前記容器の周囲に設けられる蒸発源周辺部材とを有する蒸発源を備え、前記蒸発口部から前記成膜材料を放出することで、基板上に蒸着膜を形成するように構成した蒸着装置であって、前記複数の蒸発口部のうち最も外側に設けられた一対の外側蒸発口部は、夫々前記容器の長手方向外側に向くように傾斜する開口端面を有し、前記容器及び前記蒸発源周辺部材が、前記開口端面を含む仮想平面より外側に突出せず前記仮想平面の内側に収まるように構成されていることを特徴とする蒸着装置。   An evaporation source having a container for storing a film-forming material, a plurality of evaporation ports provided along the longitudinal direction of the container, and an evaporation source peripheral member provided around the container; A deposition apparatus configured to form a deposition film on a substrate by discharging the film forming material from a pair of outer evaporation port portions provided on the outermost side among the plurality of evaporation port portions; Each of the container and the evaporation source peripheral member does not protrude outward from the virtual plane including the opening end face and does not protrude outside the virtual plane. It is comprised as follows. The vapor deposition apparatus characterized by the above-mentioned. 前記容器には蒸発した前記成膜材料が拡散する拡散部が設けられ、この拡散部の容器の長手方向における幅は前記蒸発口部の配設幅より狭い幅に設定されていることを特徴とする請求項１に記載の蒸着装置。   The container is provided with a diffusion part for diffusing the evaporated film forming material, and the width of the diffusion part in the longitudinal direction of the container is set to be narrower than the width of the evaporation port part. The vapor deposition apparatus according to claim 1. 前記外側蒸発口部を除くいずれかの蒸発口部は前記容器の長手方向外側に向くように傾斜する開口端面を有し、前記外側蒸発口部の開口端面の傾斜角度が最も大きくなるように設定されていることを特徴とする請求項１，２のいずれか１項に記載の蒸着装置。   Any evaporation port portion except the outer evaporation port portion has an opening end surface that is inclined so as to face the outer side in the longitudinal direction of the container, and is set so that the inclination angle of the opening end surface of the outer evaporation port portion is the largest. The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is provided. 前記蒸発口部の開口端面の傾斜角度は、これより内側の蒸発口部の開口端面の傾斜角度以上の角度に設定されていることを特徴とする請求項１〜４のいずれか１項に記載の蒸着装置。   5. The inclination angle of the opening end surface of the evaporation port portion is set to an angle equal to or greater than the inclination angle of the opening end surface of the evaporation port portion on the inner side. 5. Vapor deposition equipment. 前記外側蒸発口部の開口端面の傾斜角度は３０°〜４５°に設定されていることを特徴とする請求項１〜４のいずれか１項に記載の蒸着装置。   The vapor deposition apparatus according to any one of claims 1 to 4, wherein an inclination angle of an opening end surface of the outer evaporation port portion is set to 30 ° to 45 °. 前記容器は、材料収容部と拡散部とで構成されていることを特徴とする請求項１〜５のいずれか１項に記載の蒸着装置。   The said container is comprised by the material accommodating part and the spreading | diffusion part, The vapor deposition apparatus of any one of Claims 1-5 characterized by the above-mentioned. 前記材料収容部の幅は前記拡散部の幅より広い幅に設定されていることを特徴とする請求項６に記載の蒸着装置。   The vapor deposition apparatus according to claim 6, wherein a width of the material accommodation portion is set to be wider than a width of the diffusion portion. 前記蒸発源周辺部材は、前記容器を加熱するヒータ、前記容器からの熱を反射するリフレクタ、前記容器の周囲に設けられる水冷板若しくは前記容器を囲む防着板であることを特徴とする請求項１〜７のいずれか１項に記載の蒸着装置。   The evaporation source peripheral member is a heater for heating the container, a reflector for reflecting heat from the container, a water-cooled plate provided around the container, or a deposition plate surrounding the container. The vapor deposition apparatus of any one of 1-7. 成膜材料が収容される容器と、前記容器の長手方向に沿って設けられる複数の蒸発口部と、前記容器の周囲に設けられる蒸発源周辺部材とを有する蒸発源であって、前記複数の蒸発口部のうち最も外側に設けられた一対の外側蒸発口部は、夫々前記容器の長手方向外側に向くように傾斜する開口端面を有し、前記容器及び前記蒸発源周辺部材が、前記開口端面を含む仮想平面より外側に突出せず前記仮想平面の内側に収まるように構成されていることを特徴とする蒸発源。   An evaporation source having a container for storing a film forming material, a plurality of evaporation ports provided along a longitudinal direction of the container, and an evaporation source peripheral member provided around the container, The pair of outer evaporation ports provided on the outermost side of the evaporation ports each have an opening end surface that is inclined so as to face the outer side in the longitudinal direction of the container, and the container and the evaporation source peripheral member include the opening. An evaporation source, characterized in that the evaporation source is configured not to protrude outward from a virtual plane including an end face but to be inside the virtual plane. 前記容器には蒸発した前記成膜材料が拡散する拡散部が設けられ、この拡散部の容器の長手方向における幅は前記蒸発口部の配設幅より狭い幅に設定されていることを特徴とする請求項９に記載の蒸発源。   The container is provided with a diffusion part for diffusing the evaporated film forming material, and the width of the diffusion part in the longitudinal direction of the container is set to be narrower than the width of the evaporation port part. The evaporation source according to claim 9. 前記外側蒸発口部を除くいずれかの蒸発口部は前記容器の長手方向外側に向くように傾斜する開口端面を有し、前記外側蒸発口部の開口端面の傾斜角度が最も大きくなるように設定されていることを特徴とする請求項９，１０のいずれか１項に記載の蒸発源。   Any evaporation port portion except the outer evaporation port portion has an opening end surface that is inclined so as to face the outer side in the longitudinal direction of the container, and is set so that the inclination angle of the opening end surface of the outer evaporation port portion is the largest. The evaporation source according to claim 9, wherein the evaporation source is provided. 前記蒸発口部の開口端面の傾斜角度は、これより内側の蒸発口部の開口端面の傾斜角度以上の角度に設定されていることを特徴とする請求項９〜１１のいずれか１項に記載の蒸発源。   12. The inclination angle of the opening end face of the evaporation port portion is set to an angle that is equal to or greater than the inclination angle of the opening end surface of the evaporation port portion on the inner side. 12. The source of evaporation. 前記外側蒸発口部の開口端面の傾斜角度は３０°〜４５°に設定されていることを特徴とする請求項９〜１２のいずれか１項に記載の蒸発源。   The evaporation source according to any one of claims 9 to 12, wherein an inclination angle of an opening end face of the outer evaporation port portion is set to 30 ° to 45 °. 前記容器は、材料収容部と拡散部とで構成されていることを特徴とする請求項９〜１３のいずれか１項に記載の蒸発源。   The evaporation source according to any one of claims 9 to 13, wherein the container includes a material storage portion and a diffusion portion. 前記材料収容部の幅は前記拡散部の幅より広い幅に設定されていることを特徴とする請求項１４に記載の蒸発源。   The evaporation source according to claim 14, wherein a width of the material accommodating portion is set to be wider than a width of the diffusion portion. 前記蒸発源周辺部材は、前記容器を加熱するヒータ、前記容器からの熱を反射するリフレクタ、前記容器の周囲に設けられる水冷板若しくは前記容器を囲む防着板であることを特徴とする請求項９〜１５のいずれか１項に記載の蒸発源。   The evaporation source peripheral member is a heater for heating the container, a reflector for reflecting heat from the container, a water-cooled plate provided around the container, or a deposition plate surrounding the container. The evaporation source according to any one of 9 to 15.
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