JP2017529707A - 背面発光型led及び反射基板を用いた輝度パターン形成 - Google Patents
背面発光型led及び反射基板を用いた輝度パターン形成 Download PDFInfo
- Publication number
- JP2017529707A JP2017529707A JP2017535621A JP2017535621A JP2017529707A JP 2017529707 A JP2017529707 A JP 2017529707A JP 2017535621 A JP2017535621 A JP 2017535621A JP 2017535621 A JP2017535621 A JP 2017535621A JP 2017529707 A JP2017529707 A JP 2017529707A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- reflective
- substrate
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 230000007261 regionalization Effects 0.000 title 1
- 125000006850 spacer group Chemical group 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 13
- 230000005855 radiation Effects 0.000 description 10
- 238000005286 illumination Methods 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 2
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 1
- 206010011878 Deafness Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- -1 silver aluminum Chemical compound 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
Description
As detailed above, the choice of the reflective surface upon which the back-emitting light emitting device 300 is situated provides luminance patterns having different characteristics, without the use of secondary optics.
上で詳述したように、背面発光型発光デバイス300が配置される反射表面の選択は、二次的光学素子を使用することなく、異なる特性を有する輝度パターンをもたらす。
Claims (15)
- 発光デバイスであって:
発光表面を有する発光素子と;
前記発光表面に対向する反射表面を有する反射体と;
前記反射表面を前記発光表面から分離するスペーサ素子であり、当該発光デバイスから放出される光の少なくとも半分が、前記反射体に向かう前記発光表面の法線から90度以上の角度に放出されるように、前記反射表面と前記発光表面との間の分離距離をもたらすスペーサ素子と、
を含む発光デバイス。 - 請求項1に記載の発光デバイスであり、前記反射表面が実質的に拡散反射性である、発光デバイス。
- 請求項1に記載の発光デバイスであり、さらに、前記発光素子と前記反射体との間に位置される波長変換層を含む発光デバイス。
- 請求項1に記載の発光デバイスであり、前記分離距離が少なくとも500μmである、発光デバイス。
- 請求項1に記載の発光デバイスであり、前記スペーサ素子の外壁が、前記スペーサ素子からの光取出を容易にするように粗面化されている、発光デバイス。
- 請求項1に記載の発光デバイスであり、さらに、前記反射体よりも少なくとも5倍大きい反射基板を含む、発光デバイス。
- 請求項6に記載の発光デバイスであり、前記反射基板が前記反射体の少なくとも1桁大きい、発光デバイス。
- 請求項6に記載の発光デバイスであり、前記反射基板が実質的に拡散反射性である、発光デバイス。
- 請求項6に記載の発光デバイスであり、前記反射基板が実質的に鏡面反射性である領域を含む、発光デバイス。
- 請求項6に記載の発光デバイスであり、さらに、前記反射基板と当該発光デバイスとの間の鏡面反射ブロックを含む、発光デバイス。
- 請求項1に記載の発光デバイスであり、前記スペーサ素子の少なくとも1つの側壁が反射性である、発光デバイス。
- 発光構造体であって:
基板と;
前記基板の上に位置された背面発光型の発光デバイスと;
を含み、
前記基板は前記発光デバイスを包囲する反射表面を含み、該反射表面は、前記発光デバイスよりも面積が少なくとも一桁大きい、
発光構造体。 - 請求項12に記載の発光構造体であり、前記反射表面が実質的に拡散反射性である、発光構造体。
- 請求項13に記載の発光構造体であり、前記反射表面が、実質的に鏡面反射性である領域を含む、発光構造体。
- 請求項12に記載の発光構造体であり、前記反射表面が、実質的に鏡面反射性である、発光構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462053951P | 2014-09-23 | 2014-09-23 | |
US62/053,951 | 2014-09-23 | ||
PCT/US2015/051370 WO2016048971A1 (en) | 2014-09-23 | 2015-09-22 | Luminance pattern shaping using a back-emitting led and a reflective substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017529707A true JP2017529707A (ja) | 2017-10-05 |
JP2017529707A5 JP2017529707A5 (ja) | 2018-11-01 |
JP6688303B2 JP6688303B2 (ja) | 2020-04-28 |
Family
ID=54261091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017535621A Active JP6688303B2 (ja) | 2014-09-23 | 2015-09-22 | 背面発光型led及び反射基板を用いた輝度パターン形成 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10193035B2 (ja) |
EP (1) | EP3198659B1 (ja) |
JP (1) | JP6688303B2 (ja) |
KR (1) | KR102475229B1 (ja) |
CN (1) | CN107251243B (ja) |
WO (1) | WO2016048971A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6932910B2 (ja) * | 2016-10-27 | 2021-09-08 | 船井電機株式会社 | 表示装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004304041A (ja) * | 2003-03-31 | 2004-10-28 | Citizen Electronics Co Ltd | 発光ダイオード |
US20070086211A1 (en) * | 2005-10-18 | 2007-04-19 | Goldeneye, Inc. | Side emitting illumination systems incorporating light emitting diodes |
JP2013115088A (ja) * | 2011-11-25 | 2013-06-10 | Citizen Holdings Co Ltd | 半導体発光装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007048775A (ja) | 2005-08-05 | 2007-02-22 | Koito Mfg Co Ltd | 発光ダイオードおよび車両用灯具 |
US7626210B2 (en) | 2006-06-09 | 2009-12-01 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED |
JP2008177191A (ja) * | 2007-01-16 | 2008-07-31 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびそれを用いたカメラ |
CN101868865B (zh) * | 2007-11-20 | 2012-08-22 | 皇家飞利浦电子股份有限公司 | 具有波长转换的侧发射器件 |
WO2009074944A1 (en) * | 2007-12-11 | 2009-06-18 | Koninklijke Philips Electronics N.V. | Side emitting device with hybrid top reflector |
JP2011507254A (ja) * | 2007-12-11 | 2011-03-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ハイブリッド上部反射器を備える側面放射装置 |
US8755005B2 (en) | 2008-09-24 | 2014-06-17 | Koninklijke Philips N.V. | Thin edge backlight with LEDS optically coupled to the back surface |
US20100098377A1 (en) * | 2008-10-16 | 2010-04-22 | Noam Meir | Light confinement using diffusers |
WO2010123284A2 (en) * | 2009-04-21 | 2010-10-28 | Lg Electronics Inc. | Light emitting device |
JP5468349B2 (ja) * | 2009-10-22 | 2014-04-09 | シチズンホールディングス株式会社 | Led光源装置の製造方法 |
US9318674B2 (en) * | 2013-02-05 | 2016-04-19 | Cree, Inc. | Submount-free light emitting diode (LED) components and methods of fabricating same |
-
2015
- 2015-09-22 WO PCT/US2015/051370 patent/WO2016048971A1/en active Application Filing
- 2015-09-22 US US15/510,999 patent/US10193035B2/en active Active
- 2015-09-22 CN CN201580063633.XA patent/CN107251243B/zh active Active
- 2015-09-22 JP JP2017535621A patent/JP6688303B2/ja active Active
- 2015-09-22 EP EP15775863.2A patent/EP3198659B1/en active Active
- 2015-09-22 KR KR1020177010937A patent/KR102475229B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004304041A (ja) * | 2003-03-31 | 2004-10-28 | Citizen Electronics Co Ltd | 発光ダイオード |
US20070086211A1 (en) * | 2005-10-18 | 2007-04-19 | Goldeneye, Inc. | Side emitting illumination systems incorporating light emitting diodes |
JP2013115088A (ja) * | 2011-11-25 | 2013-06-10 | Citizen Holdings Co Ltd | 半導体発光装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6688303B2 (ja) | 2020-04-28 |
CN107251243B (zh) | 2019-08-06 |
KR20170060098A (ko) | 2017-05-31 |
KR102475229B1 (ko) | 2022-12-09 |
US20170279016A1 (en) | 2017-09-28 |
CN107251243A (zh) | 2017-10-13 |
EP3198659A1 (en) | 2017-08-02 |
WO2016048971A1 (en) | 2016-03-31 |
US10193035B2 (en) | 2019-01-29 |
EP3198659B1 (en) | 2021-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106611811B (zh) | 具有分布式布拉格反射器的发光二极管芯片 | |
TWI518948B (zh) | To enhance the luminous angle of the small size of the LED package to improve the structure | |
US10473292B2 (en) | Solid state illumination devices including spatially-extended light sources and reflectors | |
JP6448188B2 (ja) | ランプユニット及びそれを用いた車両ランプ装置 | |
US9890911B2 (en) | LED module with uniform phosphor illumination | |
JP2010129202A (ja) | Led照明装置 | |
JP6217972B2 (ja) | 照明器具 | |
JP5167099B2 (ja) | 照明装置 | |
TWI469383B (zh) | A light emitting device and a manufacturing method thereof | |
JP2017502477A (ja) | 高輝度led光源用の色混合出力 | |
JP2022527113A (ja) | きらめきをもたらす光反射性粒子を有するledフィラメント | |
JP2013045530A (ja) | 発光装置及び照明器具 | |
KR101666844B1 (ko) | 광학 소자 및 이를 포함하는 광원 모듈 | |
JP6688303B2 (ja) | 背面発光型led及び反射基板を用いた輝度パターン形成 | |
JP2015090853A (ja) | 照明装置およびレンズ | |
JP2010016108A (ja) | 発光装置 | |
TWI481795B (zh) | A light emitting diode lamp | |
JP5891398B2 (ja) | 照明器具 | |
JP2010021256A (ja) | 発光装置 | |
KR101396582B1 (ko) | 측면 발광소자와 그 측면 발광소자를 포함하는 어레이 | |
JP2017118101A (ja) | Led発光装置 | |
JP2012174462A (ja) | 照明器具 | |
TWI588406B (zh) | 發光裝置 | |
TWI635238B (zh) | 發光裝置 | |
TWM529941U (zh) | 發光二極體組件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170523 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180920 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180920 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20180920 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20181107 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181204 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190301 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20190307 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20190716 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191118 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20191126 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200204 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200304 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200403 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6688303 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |