JP2017228560A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017228560A JP2017228560A JP2016121685A JP2016121685A JP2017228560A JP 2017228560 A JP2017228560 A JP 2017228560A JP 2016121685 A JP2016121685 A JP 2016121685A JP 2016121685 A JP2016121685 A JP 2016121685A JP 2017228560 A JP2017228560 A JP 2017228560A
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
図1を用いて、本発明の一実施形態に係る半導体装置の概要について説明する。実施形態1の半導体装置10は、液晶表示装置(Liquid Crystal Display Device:LCD)、表示部に有機EL素子や量子ドット等の自発光素子(Organic Light−Emitting Diode:OLED)を利用した自発光表示装置、又は電子ペーパー等の反射型表示装置において、各々の表示装置の各画素や駆動回路に用いられる。
図1は、本発明の一実施形態に係る半導体装置の概要を示す断面図である。図1に示すように、半導体装置10は、基板100、下地層110、ゲート電極120、ゲート絶縁層130、酸化物半導体層140、ソース電極およびドレイン電極150、第1絶縁層160、配線層170、バリア層180、第2絶縁層190、第1電極200、第3絶縁層210、及び第2電極220を有する。半導体装置10はボトムゲート型トランジスタである。
基板100としては、ポリイミド基板を使用することができる。また、ポリイミド基板の他にも、アクリル基板、シロキサン基板、またはフッ素樹脂基板などの樹脂を含む絶縁基板を用いることができる。基板100の耐熱性を向上させるために、上記の基板に不純物を導入してもよい。特に、半導体装置10がトップエミッション型のディスプレイである場合、基板100が透明である必要はないため、基板100の透明度を悪化させる不純物を用いることができる。一方、基板100が可撓性を有する必要がない場合は、基板100としてガラス基板、石英基板、およびサファイア基板などの透光性を有する絶縁基板を用いることができる。表示装置ではない集積回路の場合は、シリコン基板、炭化シリコン基板、化合物半導体基板などの半導体基板、ステンレス基板などの導電性基板など、透光性を有さない基板を使用することができる。
図2は、本発明の一実施形態に係る半導体装置の断面図における部分拡大図である。図2は、図1において点線で囲まれた配線層170のパターン端部を拡大した図である。なお、図2では、配線層170が3層の積層構造である構造を例示した。
アルミニウム層174の酸素混入領域274は、アルミニウム層174に対して酸素イオンを打ち込むことで形成される。酸素イオンの打ち込みは、イオンドーピング法、イオン注入法、反応性スパッタリング法などを用いて行うことができる。
ここで、配線層170のアルミニウム層174と樹脂絶縁層である第2絶縁層190とが接触することで発生する問題点について説明する。配線としてAlが用いられる場合、少なくともAlの上方をTiなどの導電層でカバーする構造が一般的である。しかし、Alの上方がTiでカバーされていても、配線のパターン端部ではAlがTiから露出される。AlがTiから露出された状態で、当該配線上に樹脂絶縁層が形成されると、当該配線のパターン端部において、Alと樹脂絶縁層とが接触してしまう。
図3を用いて、本発明の一実施形態に係る半導体装置の概要について説明する。なお、以下の実施形態で参照する図面において、実施形態1と同一部分または同様な機能を有する部分には同一の数字または同一の数字の後にアルファベットを追加した符号を付し、その繰り返しの説明は省略する。
図5は、本発明の一実施形態に係る半導体装置の概要を示す断面図である。図5に示す半導体装置10Cは図1に示す半導体装置10に類似しているが、半導体装置10Cはチャネル領域に相当する酸化物半導体層140C上にエッチストッパ230Cが設けられている点において、半導体装置10とは相違する。つまり、半導体装置10Cはチャネルストッパ型トランジスタである。
図6は、本発明の一実施形態に係る半導体装置の概要を示す断面図である。図6に示す半導体装置10Dは図1に示す半導体装置10に類似しているが、半導体装置10Dは下地層110D上に酸化物半導体層140D、ゲート絶縁層130D、およびゲート電極120Dが順に積層された構造を有する点において、半導体装置10とは相違する。つまり、半導体装置10Dはトップゲート型トランジスタである。
図7および図8を用いて、水、水素、アンモニアに対するバリア層180の透過率および第3絶縁層210の透過率について説明する。図7は、本発明の一実施形態に係る半導体装置の保護層の特性を評価する評価サンプルの断面構造を示す図である。評価サンプルは(A)および(B)の2種類の構造が準備された。評価サンプル(A)はシリコンウェハ300上にCVD法で成膜したSiNx膜310およびスパッタリング法で成膜したAlOx膜320が順に積層された構造である。評価サンプル(B)はシリコンウェハ300上にCVD法で成膜したSiNx膜310のみが成膜された構造である。いずれのサンプルもSiNx膜310の膜厚は約200nmである。評価サンプル(A)のAlOx膜320の膜厚は約20nmである。図7に示す2種類のサンプルを用いて昇温脱離ガス分析法(TDS分析)を行った。
図9乃至図11を用いて、半導体装置10の構造において、バリア層180としてAlOxまたはSiNxを用いた場合のトランジスタ特性を比較した結果について説明する。
100:基板
110:下地層
120:ゲート電極
130:ゲート絶縁層
140:酸化物半導体層
150:ソース電極およびドレイン電極
160:第1絶縁層
162、164、192、202B:開口部
170:配線層
172:第1導電層
174:アルミニウム層
176:第2導電層
180:バリア層
190:第2絶縁層
200:第1電極
210:第3絶縁層
220:第2電極
222A:領域
230:エッチストッパ
274:酸素混入領域
300:シリコンウェハ
310:SiNx膜
320:AlOx膜
402、406:点線スペクトル
404、408:実線スペクトル
Claims (16)
- 酸化物半導体層と、
前記酸化物半導体層の上方に配置されたゲート電極と、
前記酸化物半導体層と前記ゲート電極との間のゲート絶縁層と、
前記酸化物半導体層の上方に配置され、第1開口部が設けられた第1絶縁層と、
前記第1絶縁層上に配置され、アルミニウム層を含み、前記第1開口部を介して前記酸化物半導体層に電気的に接続された配線と、
前記第1絶縁層上、前記配線上、および前記配線の側面を覆い、酸化アルミニウムを含むバリア層と、
前記バリア層上に配置された有機絶縁層と、を有する半導体装置。 - 前記バリア層は、前記配線上および前記配線の側面において前記配線に接している請求項1に記載の半導体装置。
- 前記アルミニウム層は、前記アルミニウム層と前記バリア層との間に酸素混入領域を有する請求項2に記載の半導体装置。
- 前記配線は、第1導電層および第2導電層をさらに有し、
前記アルミニウム層は、前記第1導電層と前記第2導電層との間に配置されている請求項3に記載の半導体装置。 - 前記有機絶縁層上に配置された第1電極と、
前記第1電極に対向し、前記有機絶縁層に設けられた第2開口部を介して前記配線に電気的に接続された第2電極と、
前記第1電極と前記第2電極とを電気的に絶縁し、前記第2開口部および前記有機絶縁層の上面を露出する第2絶縁層と、をさらに有する請求項1に記載の半導体装置。 - 前記バリア層の水、水素またはアンモニアに対する透過率は、前記第2絶縁層の水、水素またはアンモニアに対する透過率より低い請求項5に記載の半導体装置。
- 前記第2電極は、前記第2開口部によって露出された前記有機絶縁層の上面を覆う請求項5に記載の半導体装置。
- 前記有機絶縁層の上面の一部は、前記第2電極および前記第2絶縁層から露出されている請求項5に記載の半導体装置。
- ゲート電極と、
前記ゲート電極の上方に配置された酸化物半導体層と、
前記ゲート電極と前記酸化物半導体層との間のゲート絶縁層と、
前記ゲート電極の上方に配置され、第1開口部が設けられた第1絶縁層と、
前記第1絶縁層上に配置され、アルミニウム層を含み、前記第1開口部を介して前記酸化物半導体層に電気的に接続された配線と、
前記第1絶縁層上、前記配線上、および前記配線の側面を覆い、酸化アルミニウムを含むバリア層と、
前記バリア層上に配置された有機絶縁層と、を有する半導体装置。 - 前記バリア層は、前記配線上および前記配線の側面において前記配線に接している請求項9に記載の半導体装置。
- 前記アルミニウム層は、前記アルミニウム層と前記バリア層との間に酸素混入領域を有する請求項10に記載の半導体装置。
- 前記配線は、第1金属層および第2金属層をさらに有し、
前記アルミニウム層は、前記第1金属層と前記第2金属層との間に配置されている請求項11に記載の半導体装置。 - 前記有機絶縁層上に配置された第1電極と、
前記第1電極に対向し、前記有機絶縁層に設けられた第2開口部を介して前記配線に電気的に接続された第2電極と、
前記第1電極と前記第2電極とを電気的に絶縁し、前記第2開口部および前記有機絶縁層の上面を露出する第2絶縁層と、をさらに有する請求項9に記載の半導体装置。 - 前記バリア層の水、水素またはアンモニアに対する透過率は、前記第2絶縁層の水、水素またはアンモニアに対する透過率より低い請求項13に記載の半導体装置。
- 前記第2電極は、前記第2開口部によって露出された前記有機絶縁層の上面を覆う請求項13に記載の半導体装置。
- 前記有機絶縁層の上面の一部は、前記第2電極および前記第2絶縁層から露出されている請求項13に記載の半導体装置。
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