JP2017208987A5 - - Google Patents

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Publication number
JP2017208987A5
JP2017208987A5 JP2016101733A JP2016101733A JP2017208987A5 JP 2017208987 A5 JP2017208987 A5 JP 2017208987A5 JP 2016101733 A JP2016101733 A JP 2016101733A JP 2016101733 A JP2016101733 A JP 2016101733A JP 2017208987 A5 JP2017208987 A5 JP 2017208987A5
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JP
Japan
Prior art keywords
substrate
snubber circuit
power converter
switching element
capacitor
Prior art date
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Application number
JP2016101733A
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Japanese (ja)
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JP6602260B2 (en
JP2017208987A (en
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Publication date
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Priority to JP2016101733A priority Critical patent/JP6602260B2/en
Priority claimed from JP2016101733A external-priority patent/JP6602260B2/en
Publication of JP2017208987A publication Critical patent/JP2017208987A/en
Publication of JP2017208987A5 publication Critical patent/JP2017208987A5/ja
Application granted granted Critical
Publication of JP6602260B2 publication Critical patent/JP6602260B2/en
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Claims (10)

スイッチング素子が設置される第1の基板と、
前記スイッチング素子に並列接続されるコンデンサを含むスナバ回路が設置される第2の基板と、
前記スイッチング素子と前記スナバ回路とを電気的に接続する導体と
を備えることを特徴とする電力変換装置。
A first substrate on which a switching element is installed;
A second substrate on which a snubber circuit including a capacitor connected in parallel to the switching element is installed;
A power conversion device comprising: a conductor that electrically connects the switching element and the snubber circuit.
前記第2の基板は、前記第1の基板よりも熱膨張係数が小さいこと
を特徴とする請求項1に記載の電力変換装置。
The power converter according to claim 1, wherein the second substrate has a smaller thermal expansion coefficient than the first substrate.
前記第1の基板と前記第2の基板は同一平面内に配置され、前記コンデンサは前記第2の基板の上面における中心よりも前記第1の基板側に配置されること
を特徴とする請求項1または請求項2に記載の電力変換装置。
The first substrate and the second substrate are disposed in the same plane, and the capacitor is disposed closer to the first substrate than the center of the upper surface of the second substrate. The power converter device of Claim 1 or Claim 2.
前記第1の基板と前記第2の基板は積層方向に順に配置されること
を特徴とする請求項1または請求項2に記載の電力変換装置。
The power converter according to claim 1, wherein the first substrate and the second substrate are sequentially arranged in a stacking direction.
前記スイッチング素子と前記スナバ回路とを接続する導体に配置され、前記スナバ回路に一定値以上の電流が流れたときに溶断する溶断部材を備えることを特徴とする請求項1から請求項4の何れか一項に記載の電力変換装置。   5. The fusing member according to claim 1, further comprising a fusing member disposed on a conductor connecting the switching element and the snubber circuit and fusing when a current of a predetermined value or more flows through the snubber circuit. The power conversion device according to claim 1. 前記溶断部材はワイヤで構成されていることを特徴とする請求項5に記載の電力変換装置。   The power conversion device according to claim 5, wherein the fusing member is formed of a wire. 前記スナバ回路は、前記コンデンサと直列に接続された抵抗を備えることを特徴とする請求項1から請求項6の何れか一項に記載の電力変換装置。   The said snubber circuit is provided with the resistance connected in series with the said capacitor | condenser, The power converter device as described in any one of Claims 1-6 characterized by the above-mentioned. 前記コンデンサの電極の一端は前記ワイヤに接続され、
前記コンデンサの電極の他端は前記第2の基板の導体パターンに接続されていることを特徴とする請求項に記載の電力変換装置。
One end of the capacitor electrode is connected to the wire,
Power converter according to claim 6 and the other end of said capacitor electrode, characterized in that is connected to the conductor pattern of the second substrate.
前記スナバ回路は、抵抗を備え、The snubber circuit comprises a resistor,
前記抵抗、前記コンデンサおよび前記ワイヤは直列に接続されていることを特徴とする請求項6に記載の電力変換装置。  The power converter according to claim 6, wherein the resistor, the capacitor, and the wire are connected in series.
前記スイッチング素子はワイドギャップ半導体を用いて形成されていることを特徴とする請求項1から請求項の何れか一項に記載の電力変換装置。
The power conversion device according to any one of claims 1 to 9 , wherein the switching element is formed using a wide gap semiconductor.
JP2016101733A 2016-05-20 2016-05-20 Power converter Active JP6602260B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016101733A JP6602260B2 (en) 2016-05-20 2016-05-20 Power converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016101733A JP6602260B2 (en) 2016-05-20 2016-05-20 Power converter

Publications (3)

Publication Number Publication Date
JP2017208987A JP2017208987A (en) 2017-11-24
JP2017208987A5 true JP2017208987A5 (en) 2018-10-11
JP6602260B2 JP6602260B2 (en) 2019-11-06

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ID=60416608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016101733A Active JP6602260B2 (en) 2016-05-20 2016-05-20 Power converter

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JP (1) JP6602260B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019186983A (en) * 2018-04-02 2019-10-24 株式会社豊田中央研究所 Snubber capacitor incorporated semiconductor power module
JP6844746B2 (en) * 2018-04-19 2021-03-17 三菱電機株式会社 Power converter
JP7006547B2 (en) * 2018-09-10 2022-01-24 三菱電機株式会社 Semiconductor device
JP7038632B2 (en) 2018-09-12 2022-03-18 三菱電機株式会社 Semiconductor devices and methods for manufacturing semiconductor devices
CN114144965A (en) * 2019-07-24 2022-03-04 日立安斯泰莫株式会社 Circuit arrangement
JP7358921B2 (en) 2019-11-08 2023-10-11 富士電機株式会社 Semiconductor module and semiconductor module manufacturing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4901652B2 (en) * 2007-08-31 2012-03-21 三菱電機株式会社 Semiconductor device assembly method and semiconductor device
JP5258721B2 (en) * 2009-09-18 2013-08-07 三菱電機株式会社 Inverter device
JP5860784B2 (en) * 2012-09-10 2016-02-16 日立オートモティブシステムズ株式会社 Power semiconductor module

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