JP2017183664A - 異方性導電接続構造体 - Google Patents
異方性導電接続構造体 Download PDFInfo
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- JP2017183664A JP2017183664A JP2016073087A JP2016073087A JP2017183664A JP 2017183664 A JP2017183664 A JP 2017183664A JP 2016073087 A JP2016073087 A JP 2016073087A JP 2016073087 A JP2016073087 A JP 2016073087A JP 2017183664 A JP2017183664 A JP 2017183664A
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- Prior art keywords
- electrode terminal
- anisotropic conductive
- connection structure
- protrusion
- conductive particles
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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Abstract
【解決手段】上記課題を解決するために、本発明のある観点によれば、表面に突出部が形成された第1の電極端子と、第2の電極端子と、第1の電極端子と第2の電極端子とを導通する導電性粒子を含む異方性導電接着剤層と、を備え、導電性粒子の圧縮前粒子径に対する突出部の高さの比は、60%未満であり、第1の電極端子の開口面積率は55%以上であり、第2の電極端子の高さは6μm以上である、異方性導電接続構造体が提供される。
【選択図】図1
Description
まず、図1及び図2に基づいて、本実施形態に係る異方性導電接続構造体10の構成について説明する。
次に、異方性導電接続構造体10が満たすべき要件について説明する。異方性導電接続構造体10が以下の要件を満たす場合に、突出部22が導電性粒子42を捕捉することができる。この結果、接続抵抗を低減することができ、信頼性が向上する。さらに、接着剤層40は、第1の電極端子21と第2の電極端子31とを強固に接着することができる。なお、異方性導電接続構造体10は、少なくとも要件1〜3を満たす必要がある。異方性導電接続構造体10は、さらに要件4以降を満たすことが好ましい。なお、以下の要件を満たすか否かを評価するに際して、各電極の構造等は、SEM(走査型電子顕微鏡)等によって観察可能である。例えば、突出部22の高さH1は、第1の電極端子21をSEMで観察することで測定可能である。また、以下のパラメータは、複数の異方性導電接続構造体10について測定された測定値の算術平均値であってもよいし、いずれかの値を代表値として使用してもよい。
導電性粒子42の圧縮前粒子径に対する突出部22の高さH1の比(以下、「突出部高さ/粒子径比」とも称する」は、60%未満である。ここで、圧縮前粒子径は、導電性粒子42を圧縮する前の粒子径である。突出部高さ/粒子径比が60%以上となる場合には、突出部22が導電性粒子42の圧縮を阻害してしまう。すなわち、凹部23内に捕捉された導電性粒子42は、十分に圧縮されない。この結果、接続抵抗が増大し、信頼性が悪化する。突出部高さ/粒子径比が60%未満となる場合、突出部22は、導電性粒子42を凹部23内に捕捉することができる。さらに、導電性粒子42は、十分に圧縮される。突出部高さ/粒子径比は、50%未満であることが好ましい。
第1の電極端子21の開口面積率は55%以上である。ここで、開口面積率は、第1の電極端子21の表面の全面積に対する凹部23の開口面の面積比である。開口面積率が55%未満となる場合、凹部23内に十分な数の導電性粒子42を捕捉することができない。開口面積率は、70%以上であることが好ましい。開口面積率の上限値は特に制限されないが、開口面積率が大きすぎると突出部22の剛性が低くなる可能性がある。このため、開口面積率は90%以下であることが好ましい。
第2の電極端子31の高さH2は6μm以上である。これにより、第2の電極端子31間にも十分な量の接着剤が流入するので、第1の電極端子21と第2の電極端子31とが強固に接着される。さらに、第1の電極端子21の突出部22が仮に第2の電極端子31に接触したとしても、第1の電極端子21の下方には、十分な量の硬化樹脂層41が存在する。したがって、突出部22、ひいては第1の電極端子21は硬化樹脂層41によって十分に保護される。この結果、接続抵抗が低減し、信頼性が向上する。高さH2の上限値は特に制限されないが、35μm以下が好ましい。
第2の電極端子31の硬度に対する第1の電極端子21の硬度の比(以下、「電極端子の硬度比」とも称する)は10%より大きいことが好ましい。第1の電極端子21が第2の電極端子31よりも柔らかすぎる場合、圧縮時(すなわち、異方性導電接続時)に、第1の電極端子21が大きく変形するからである。変形量が大きい場合、第1の電極端子21同士が接触し、ショートする可能性がある。なお、各電極端子の硬度は、例えばピッカース硬度である。電極端子の硬度比は、15%より大きいことがさらに好ましく、30%より大きいことがさらに好ましい。電極端子の硬度比の上限値は特に制限されないが、1程度(すなわち、両者の硬度がほぼ一致)であってもよい。
凹部23の短辺長さに対する導電性粒子42の圧縮前粒子径の比(以下、「粒子径/開口短辺長さ比」とも称する)は、10%未満であることが好ましい。ここで、凹部23の短辺長さは、凹部23の平面視形状(例えば図2に示す形状)の短辺長さである。粒子径/開口短辺長さ比が10%未満となる場合、より多くの導電性粒子42を凹部23内に捕捉することができる。粒子径/開口短辺長さ比は、9%未満であることがさらに好ましく、8.5%未満であることが更に好ましい。なお、粒子径/開口短辺長さ比の下限値は、要件1によって定まる。すなわち、粒子径/開口短辺長さ比が小さすぎると、導電性粒子42の粒子径が小さくなりすぎて、要件1が満たされなくなる。
また、凹部23内に存在する導電性粒子42の平均占有面積率が20%未満であることが好ましい。平均占有面積率の下限は、圧縮された導電性粒子1個分以上の占有面積率であることが好ましく、圧縮された導電性粒子2個分以上の占有面積率であることがより好ましく、圧縮された導電性粒子3個分以上の占有面積率であることが更により好ましい。ここで、各導電性粒子42の占有面積は、圧縮された導電性粒子42を水平面に投影したときに得られる面積である。また、平均占有面積率は、以下の工程で測定可能である。すなわち、異方性導電接続構造体10から第1の電極端子21を引き剥がすか、あるいは、接続部分まで異方性導電接続構造体10を研磨することで、第1の電極端子21と第2の電極端子31との接続部分を露出させる。ついで、露出された接続部分を50個選択する。ついで、各接続部分を面視野で観察し、各接続部分における導電性粒子42の占有面積を測定する。なお、観察はSEM(走査型電子顕微鏡)等で行えば良い。そして、各接続部分の凹部23内に存在する全ての導電性粒子42の占有面積を測定し、これらの総面積を凹部23の開口面の面積で除算する。これにより、各接続部分における占有面積率を測定する。そして、これらの占有面積率を算術平均することで、平均占有面積率を測定する。平均占有面積率が上述した範囲内となる場合に、凹部23内に十分な量の導電性粒子42が捕捉されていることになる。
K=(3/√2)F・S−8/2・R−1/2 (1)
数式(1)中、Fは、導電性粒子42の30%圧縮変形時における荷重であり、Sは圧縮による導電性粒子42の変位量(mm)であり、Rは導電性粒子42の圧縮前の半径(mm)である。
(1−1.第1の電子部品の準備)
第1の電子部品20として、ICチップを準備した。このICチップには、第1の電極端子21として複数のバンプが形成されていた。第1の電極端子21には、高さH1=1.5μmの突出部22が形成されていた。また、バンプサイズ(すなわち、第1の電極端子21の平面形状)は、50μm×50μmの正方形状であった。また、開口面積率は73.96%であった。したがって、要件2は満たされていた。また、第1の電極端子21のピッカース硬度は50Hvであった。
第2の電子部品30として、フレキシブル基板を準備した。具体的には、厚さ25μmのポリイミド基板(新日鐵化学社製CS12−25−00CE)にCuエッチング後、Ni/Auめっきを施すことで、第2の電極端子31を形成した。以上の工程により、フレキシブル基板を作製した。Ni/Auめっきは電解めっき法により行った。第2の電極端子31の高さH1は12μmであった。したがって、要件3は満たされていた。また、第2の電極端子31の幅は50μmであった。したがって、第1の電極端子21と第2の電極端子31との有効接続面積は1849μm2であった。ここで、有効接続面積は、第1の電極端子21の開口面積に対して第2の電極端子31が占める面積を意味する。
フェノキシ樹脂(品名:YP50、新日鐵化学社製)36質量部、エポキシ硬化剤(品名:HP3941HP、旭化成ケミカルズ社製)36質量部、エポキシモノマー(品名:HP4032D、DIC社製)5質量部、ゴム変性エポキシ樹脂(品名:XER−91、JSR社製)15質量部、ゴム成分(品名:SG80H、長瀬ケムテックス社製)7質量部、カップリング剤(品名:A−187、モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社)、導電性粒子42(日本化学株式会社製)を混合することで、接着剤組成物を作製した。ここで、導電性粒子42は、個数密度が3,500,000個/mm3となるように接着剤組成物に配合した。そして、別途用意した厚さ38μmの剥離処理PETフィルムに接着剤組成物をバーコータにより塗工、乾燥することで、厚さ40μmの異方性導電フィルムを得た。
第1の電子部品20、異方性導電フィルム、及び第2の電子部品30を順次積層した。ここで、第1の電極端子21と第2の電極端子31との位置が揃うように第1の電子部品20及び第2の電子部品30の位置合わせを行った。ついで、第2の電子部品30上に緩衝材等を介してヒートツールを押し当てた。ついで、ヒートツールを用いて第1の電極端子21と第2の電極端子31とを熱圧着した。以上の工程により、異方性導電接続構造体10を作製した。ここで、熱圧着の条件は、200℃−10sec−100MPaとした。すなわち、ヒートツールの温度が圧着開始から10秒間で200℃になるようにヒートツールを昇温しつつ、100MPaの圧力で第1の電極端子21と第2の電極端子31とを10秒間熱圧着した。異方性導電接続構造体10は、後述する評価のために複数個作製した。異方性導電接続構造体10の構成を表1にまとめて示す。
1−4.で作製した異方性導電接続構造体10の接続抵抗をデジタルマルチメーター(商品名:デジタルマルチメーター7561、横河電機社製)を用いて測定した。結果を表1にまとめて示す。なお、複数の接続部分での初期抵抗を測定した。表1には、測定値の範囲を示す。
1−4.で作製した異方性導電接続構造体10の冷熱サイクル試験を行うことで、信頼性を評価した。冷熱サイクル試験では、異方性導電接続構造体10を−40℃及び100℃の雰囲気に各30分間曝し、これを1サイクルとする冷熱サイクルを500サイクル行った。ついで、異方性導電接続構造体10の接続部分を400箇所抽出し、これらのうち不良(100mΩ以上の抵抗を示すチャンネル)があった箇所の数をカウントした。結果を表1にまとめて示す。
異方性導電接続構造体10から第1の電極端子21を引き剥がすことで、接続部分を露出させた。ついで、接続部分をSEMで観察し、凹部23内に存在する導電性粒子42の数(すなわち、捕捉粒子数)、及び導電性粒子42の平均占有面積率を測定した。平均占有面積率の測定は上述した方法により行った。すなわち、測定対象となる50個の接続部分を面視野で観察し、粒子が占有している面積、すなわち占有面積を測定した。そして、この占有面積に基づいて、占有面積率を算出した。また、導電性粒子42の捕捉粒子数は、50個の接続部分について測定された粒子数の算術平均値とした。結果を表1にまとめて示す。
実施例2では、第1の電極端子21のピッカース硬度を90Hvとした他は実施例1と同様の処理を行った。実施例2では、電極端子の硬度比は60%となった。したがって、実施例2でも要件4は満たされていた。異方性導電接続構造体10の構成及び評価結果を表1にまとめて示す。
実施例3では、第1の電極端子21のピッカース硬度を20Hvとした他は実施例1と同様の処理を行った。実施例3では、電極端子の硬度比は13.3%となった。したがって、実施例3でも要件4は満たされていた。ただし、硬度比が30%以下となったので、第1の電極端子21の若干の変形が確認された。異方性導電接続構造体10の構成及び評価結果を表1にまとめて示す。
実施例4では、第2の電極端子31のピッカース硬度を500Hvとした他は実施例1と同様の処理を行った。具体的には、第2の電極端子31のめっきを無電解めっきで行うことで、上記ピッカース硬度を得た。実施例4では、電極端子の硬度比は10%となった。したがって、実施例4では要件4は満たされていなかった。このため、圧着後に第1の電極端子21が大きく変形した。しかし、第1の電極端子21のピッチを広めにしていたため、ショートは発生しなかった。異方性導電接続構造体10の構成及び評価結果を表1にまとめて示す。
実施例5では、第2の電極端子31の幅を40μmとした他は実施例1と同様の処理を行った。異方性導電接続構造体10の構成及び評価結果を表1にまとめて示す。
実施例6では、導電性粒子42の粒径を3.0μmとした他は実施例1と同様の処理を行った。異方性導電接続構造体10の構成及び評価結果を表1にまとめて示す。
第2の電極端子31の幅を30μmとした他は実施例1と同様の処理を行った。異方性導電接続構造体10の構成及び評価結果を表1にまとめて示す。
第2の電極端子31の幅を20μmとした他は実施例1と同様の処理を行った。異方性導電接続構造体10の構成及び評価結果を表1にまとめて示す。
第2の電極端子31の高さH2を6μmとした他は実施例1と同様の処理を行った。異方性導電接続構造体10の構成及び評価結果を表1にまとめて示す。
導電性粒子42の圧縮前粒子径を2.5μmとした他は実施例1と同様の処理を行った。したがって、突出部高さ/粒子径比は60%となるので、要件1が満たされなかった。異方性導電接続構造体10の構成及び評価結果を表2にまとめて示す。
第1の電極端子21の開口面積率を51.84%とした他は、実施例1と同様の処理を行った。したがって、比較例2では、要件2が満たされなかった。異方性導電接続構造体10の構成及び評価結果を表2にまとめて示す。
突出部22の高さH1を3.0μmとした他は実施例1と同様の処理を行った。したがって、比較例3では、突出部高さ/粒子径比は85.71%となるので、要件1が満たされなかった。異方性導電接続構造体10の構成及び評価結果を表2にまとめて示す。
第1の電極端子21から突出部22を研磨により除去し、第2の電極端子31の幅を20μmとした他は実施例1と同様の処理を行った。したがって、比較例4では、少なくとも要件1が満たされなかった。異方性導電接続構造体10の構成及び評価結果を表2にまとめて示す。
第2の電子部品30をガラス基板とした他は、実施例1と同様の処理を行った。このガラス基板上には、ITOからなる第2の電極端子31が形成されており、第2の電極端子31の高さH2は1μm以下であった。したがって、比較例5では、要件3が満たされなかった。異方性導電接続構造体10の構成及び評価結果を表2にまとめて示す。
第1の電極端子21から突出部22を研磨により除去し、第2の電極端子31の幅を40μmとした他は実施例1と同様の処理を行った。したがって、参考例1では、少なくとも要件1が満たされなかった。異方性導電接続構造体10の構成及び評価結果を表2にまとめて示す。
第1の電極端子21から突出部22を研磨により除去し、第2の電極端子31の幅を30μmとした他は実施例1と同様の処理を行った。したがって、参考例1では、少なくとも要件1が満たされなかった。異方性導電接続構造体10の構成及び評価結果を表2にまとめて示す。
20 第1の電子部品
21 第1の電極端子
22 突出部
23 凹部
30 第2の電子部品
31 第2の電極端子
40 接着剤層
41 硬化樹脂層
42 導電性粒子
Claims (6)
- 表面に突出部が形成された第1の電極端子と、
第2の電極端子と、
前記第1の電極端子と前記第2の電極端子とを導通する導電性粒子を含む異方性導電接着剤層と、を備え、
前記導電性粒子の圧縮前粒子径に対する前記前記突出部の高さの比は、60%未満であり、
前記第1の電極端子の開口面積率は55%以上であり、
前記第2の電極端子の高さは6μm以上である、
異方性導電接続構造体。 - 前記第2の電極端子の硬度に対する前記第1の電極端子の硬度の比は10%より大きい、請求項1記載の異方性導電接続構造体。
- 前記第1の電極端子の表面には、前記突出部に囲まれた凹部が形成され、
前記第1の電極端子の凹部の短辺長さに対する前記導電性粒子の圧縮前粒子径の比は10%未満である、請求項1または2記載の異方性導電接続構造体。 - 前記第1の電極端子の表面には、前記突出部に囲まれた凹部が形成され、
前記第1の電極端子の凹部に存在する前記導電性粒子の平均占有面積率が20%未満である、請求項1〜3のいずれか1項に記載の異方性導電接続構造体。 - 前記突出部は、前記第1の電極端子の表面の外縁全周にわたって形成されている、請求項1〜4のいずれか1項に記載の異方性導電接続構造体。
- 前記第1の電極端子は、第1の電子部品に形成されるバンプである、請求項1〜5の何れか1項に記載の異方性導電接続構造体。
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JP2020047909A (ja) * | 2018-09-14 | 2020-03-26 | ▲き▼邦科技股▲分▼有限公司 | チップパッケージ及びチップ |
US10797213B2 (en) | 2018-09-14 | 2020-10-06 | Chipbond Technology Corporation | Chip package and chip thereof |
EP4037090A1 (en) | 2021-02-01 | 2022-08-03 | Prime Planet Energy & Solutions, Inc. | Electrode terminal and secondary battery provided with said electrode terminal |
KR20220111195A (ko) | 2021-02-01 | 2022-08-09 | 프라임 플래닛 에너지 앤드 솔루션즈 가부시키가이샤 | 전극 단자 및 해당 전극 단자를 구비한 이차 전지 |
EP4220849A1 (en) | 2021-02-01 | 2023-08-02 | Prime Planet Energy & Solutions, Inc. | Electrode terminal, secondary battery provided with said electrode terminal and method for manufacturing an electrode terminal |
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US10602619B2 (en) | 2020-03-24 |
KR102081570B1 (ko) | 2020-02-26 |
CN108780763A (zh) | 2018-11-09 |
CN108780763B (zh) | 2022-12-06 |
JP6945276B2 (ja) | 2021-10-06 |
TW201804583A (zh) | 2018-02-01 |
WO2017170412A1 (ja) | 2017-10-05 |
KR20180066178A (ko) | 2018-06-18 |
US20190053383A1 (en) | 2019-02-14 |
TWI759290B (zh) | 2022-04-01 |
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