JP2017175096A - カーボンナノチューブ単一光子源 - Google Patents
カーボンナノチューブ単一光子源 Download PDFInfo
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- JP2017175096A JP2017175096A JP2016074741A JP2016074741A JP2017175096A JP 2017175096 A JP2017175096 A JP 2017175096A JP 2016074741 A JP2016074741 A JP 2016074741A JP 2016074741 A JP2016074741 A JP 2016074741A JP 2017175096 A JP2017175096 A JP 2017175096A
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- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 91
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 230000004807 localization Effects 0.000 description 5
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000002011 CNT10 Substances 0.000 description 1
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- 230000005610 quantum mechanics Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/65—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/70—Photonic quantum communication
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Carbon And Carbon Compounds (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
10A…クリーンな部分
10B…架橋カーボンナノチューブ
11…単一光子発生素子
12…堆積物
13…内包物質
14…励起子
16…単一光子
20…基板
22…ピラー
24…正孔注入電極
26…電子注入電極
30…コプレーナ導波路
32…信号電極
34…グランド電極
40…1次元共振器
42…フォトニック結晶(共振器部分)
46…2次元共振器
48…2次元フォトニック結晶
50…光ファイバー
52…レンズド光ファイバー
58…単一光子光源
60…導波路
62…干渉系
64…位相変調器
66…遅延(回)路
68…合波器
e…電子
h…正孔
Claims (8)
- 50Kよりも高い温度で励起子が局在するようにされていることを特徴とするカーボンナノチューブ単一光子源。
- カーボンナノチューブ表面に、原子、分子、原子層又は分子層を付着又はドービングさせることにより、深い局在準位を形成して、励起子が局在するようにされていることを特徴とする請求項1に記載のカーボンナノチューブ単一光子源。
- カーボンナノチューブ表面又は内部に吸着、堆積又は内包される、原子、分子、原子層又は分子層の無機物、有機物、金属、半導体又は絶縁体により、吸着、堆積又は内包が有る部分の誘電率が、吸着、堆積又は内包が無いクリーンな部分の誘電率よりも大とされ、該クリーンな部分の励起子の束縛エネルギーが大とされて、該クリーンな部分に励起子が閉じ込められて局在するようにされていることを特徴とする請求項1に記載のカーボンナノチューブ単一光子源。
- カーボンナノチューブ表面又は内部に、原子、分子、原子層又は分子層の無機物、有機物、金属、半導体又は絶縁体を吸着、堆積又は内包させることにより、吸着、堆積又は内包が有る部分の誘電率を、吸着、堆積又は内包が無いクリーンな部分の誘電率よりも大とし、該クリーンな部分の励起子の束縛エネルギーを大として、該クリーンな部分に励起子が閉じ込められて局在するようにされていることを特徴とする請求項3に記載のカーボンナノチューブ単一光子源。
- カーボンナノチューブ表面又は内部に吸着、堆積又は内包される、原子、分子、原子層又は分子層の無機物、有機物、金属、半導体又は絶縁体により、吸着、堆積又は内包が有る部分の誘電率が、吸着、堆積又は内包が無いクリーンな部分の誘電率よりも大とされ、吸着、堆積又は内包部分のバンドギャップが小とされて、吸着、堆積又は内包が有る部分に励起子が閉じ込められて局在するようにされていることを特徴とする請求項1に記載のカーボンナノチューブ単一光子源。
- カーボンナノチューブ表面又は内部に、原子、分子、原子層又は分子層の無機物、有機物、金属、半導体又は絶縁体を吸着、堆積又は内包させることにより、吸着、堆積又は内包が有る部分の誘電率を、吸着、堆積又は内包が無いクリーンな部分の誘電率よりも大として、吸着、堆積又は内包が有る部分のバンドギャップを小とし、吸着、堆積又は内包が有る部分に励起子が閉じ込められて局在するようにされていることを特徴とする請求項5に記載のカーボンナノチューブ単一光子源。
- 前記無機物、有機物、金属、半導体又は絶縁体の吸着物、堆積物又は内包物近くのカーボンナノチューブ部分又は該吸着物、堆積物又は内包物自体によって、熱的に励起された非局在の自由励起子からの発光が抑制されていることを特徴とする請求項3乃至6の何れか一項に記載のカーボンナノチューブ単一光子源。
- 前記カーボンナノチューブ表面又は内部に吸着、堆積又は内包させる物質が導電性物質であることを特徴とする請求項3乃至6の何れか一項に記載のカーボンナノチューブ単一光子源。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2015102534 | 2015-05-20 | ||
JP2015102534 | 2015-05-20 | ||
JP2016056095 | 2016-03-18 | ||
JP2016056095 | 2016-03-18 |
Publications (2)
Publication Number | Publication Date |
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JP2017175096A true JP2017175096A (ja) | 2017-09-28 |
JP6792217B2 JP6792217B2 (ja) | 2020-11-25 |
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JP2016074741A Active JP6792217B2 (ja) | 2015-05-20 | 2016-04-01 | カーボンナノチューブ単一光子源 |
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US (2) | US10316247B2 (ja) |
JP (1) | JP6792217B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020203746A1 (ja) * | 2019-04-02 | 2020-10-08 | ローム株式会社 | 単一光子源及び単一光子の出力方法 |
WO2020241194A1 (ja) * | 2019-05-30 | 2020-12-03 | 学校法人慶應義塾 | 単一光子源 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109705714B (zh) * | 2018-12-28 | 2020-12-22 | 合复新材料科技(无锡)有限公司 | 一种水性涂料纳米复合材料的制备方法及水性涂料纳米复合材料 |
CN109680486B (zh) * | 2018-12-29 | 2021-05-04 | 杭州杭复新材料科技有限公司 | 一种负离子发生面料的制备方法及负离子发生面料 |
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JP2009283303A (ja) * | 2008-05-22 | 2009-12-03 | Keio Gijuku | カーボンナノチューブ発光素子、及び、その製造方法 |
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US8415640B2 (en) * | 2010-04-19 | 2013-04-09 | President And Fellows Of Harvard College | Diamond nanowires |
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2016
- 2016-04-01 JP JP2016074741A patent/JP6792217B2/ja active Active
- 2016-04-18 US US15/131,722 patent/US10316247B2/en active Active
-
2018
- 2018-06-04 US US15/997,285 patent/US10717926B2/en active Active
Patent Citations (4)
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US20080218074A1 (en) * | 2007-03-09 | 2008-09-11 | Alexander Kastalsky | Nanotube array ballistic light emitting devices |
JP2009283303A (ja) * | 2008-05-22 | 2009-12-03 | Keio Gijuku | カーボンナノチューブ発光素子、及び、その製造方法 |
JP2010078685A (ja) * | 2008-09-24 | 2010-04-08 | Nippon Telegr & Teleph Corp <Ntt> | 光子発生装置および方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020203746A1 (ja) * | 2019-04-02 | 2020-10-08 | ローム株式会社 | 単一光子源及び単一光子の出力方法 |
JP7422743B2 (ja) | 2019-04-02 | 2024-01-26 | ローム株式会社 | 単一光子源及び単一光子の出力方法 |
WO2020241194A1 (ja) * | 2019-05-30 | 2020-12-03 | 学校法人慶應義塾 | 単一光子源 |
JP7489114B2 (ja) | 2019-05-30 | 2024-05-23 | 慶應義塾 | 単一光子源 |
Also Published As
Publication number | Publication date |
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JP6792217B2 (ja) | 2020-11-25 |
US20160340578A1 (en) | 2016-11-24 |
US10717926B2 (en) | 2020-07-21 |
US10316247B2 (en) | 2019-06-11 |
US20180282621A1 (en) | 2018-10-04 |
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