JP2017148747A - 集塵装置および基板処理システム - Google Patents
集塵装置および基板処理システム Download PDFInfo
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- 239000000428 dust Substances 0.000 title claims abstract description 76
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 239000002245 particle Substances 0.000 claims abstract description 97
- 239000012530 fluid Substances 0.000 claims abstract description 69
- 238000000926 separation method Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 238000007599 discharging Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D43/00—Separating particles from liquids, or liquids from solids, otherwise than by sedimentation or filtration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D21/00—Separation of suspended solid particles from liquids by sedimentation
- B01D21/28—Mechanical auxiliary equipment for acceleration of sedimentation, e.g. by vibrators or the like
- B01D21/283—Settling tanks provided with vibrators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D49/00—Separating dispersed particles from gases, air or vapours by other methods
- B01D49/006—Separating dispersed particles from gases, air or vapours by other methods by sonic or ultrasonic techniques
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D51/00—Auxiliary pretreatment of gases or vapours to be cleaned
- B01D51/02—Amassing the particles, e.g. by flocculation
- B01D51/06—Amassing the particles, e.g. by flocculation by varying the pressure of the gas or vapour
- B01D51/08—Amassing the particles, e.g. by flocculation by varying the pressure of the gas or vapour by sound or ultrasonics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Combined Means For Separation Of Solids (AREA)
- Separation Of Solids By Using Liquids Or Pneumatic Power (AREA)
Abstract
Description
図1は、第1実施形態の基板処理システムの構成を示す模式図である。
ただし、Vは粒子Pの体積を表し、kは音波の波数を表し、Aは音波の振幅を表す。また、B、γ、ρ、cは流体の特性を表す値である。式(1)は、座標xに位置する粒子Pに作用する力Fを表す。
図8は、第2実施形態の集塵装置1の構造を示す斜視図である。
図10は、第3実施形態の集塵装置1の構造を示す斜視図である。
図12は、第4実施形態の集塵装置1の構造を示す斜視図である。
図14は、第5実施形態の集塵装置1の構造を示す斜視図である。
図15は、第6実施形態の半導体装置の製造方法を示す断面図である。
2:循環流路、3:循環流路バルブ、4:ポンプ、5:タンク、
11:第1流路、12:第1流路バルブ、13:第2流路、14:第2流路バルブ、
15:基板処理装置、16:制御部、
21a:第1音源、21b:第1反射板、
22a:第2音源、22b:第2反射板、
23a:第3音源、23b:第3反射板、
24a:第1音源、24b:第1反射板、25:第2音源、
26:第1音源、27a、27b、28a、28b、29:壁材、
31:収容部、32:保持部、33:回転軸、34:チャックピン、35:ノズル、
41:半導体基板、42:被加工層、42a:凸部、43:基板処理液
Claims (5)
- 集塵対象の粒子を含む流体を収容する収容部と、
少なくとも1つの節を有する定在音波を前記収容部内に発生させ、前記粒子を前記節の付近にトラップする1つ以上の音源とを備え、
前記音源は、前記節が前記収容部の壁面に接触しないように、または前記節が前記収容部の壁面の所定部分に接触するように、前記定在音波を発生させ、
前記所定部分は、前記所定部分付近の前記節からの前記粒子の離脱を阻止する部材で形成されている、集塵装置。 - 前記節の形状は、点形状、閉曲線、または閉曲面である、または前記所定部分に端部を有する開曲線または開曲面である、請求項1に記載の集塵装置。
- 前記収容部は、前記収容部に前記流体を導入する導入口と、前記粒子が前記トラップにより濃縮または低減された前記流体を前記収容部から排出する排出口と、を備える請求項1または2に記載の集塵装置。
- 集塵対象の粒子を含む流体を収容する収容部と、
少なくとも1つの節を有する定在音波を前記収容部内に発生させ、前記粒子を前記節の付近にトラップする1つ以上の音源と、
前記収容部から排出された前記流体により基板を処理する基板処理装置とを備え、
前記音源は、前記節が前記収容部の壁面に接触しないように、または前記節が前記収容部の壁面の所定部分に接触するように、前記定在音波を発生させ、
前記所定部分は、前記所定部分付近の前記節からの前記粒子の離脱を阻止する部材で形成されている、基板処理システム。 - 前記収容部は、前記粒子が前記トラップにより濃縮された前記流体を第1流路に排出し、前記粒子が前記トラップにより低減された前記流体を第2流路に排出し、
前記基板処理装置は、前記第2流路からの前記流体により前記基板を処理する、請求項4に記載の基板処理システム。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2016034316A JP6554045B2 (ja) | 2016-02-25 | 2016-02-25 | 集塵装置および基板処理システム |
US15/239,243 US10290490B2 (en) | 2016-02-25 | 2016-08-17 | Dust collecting apparatus, substrate processing system, and method of manufacturing semiconductor device |
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JP2016034316A JP6554045B2 (ja) | 2016-02-25 | 2016-02-25 | 集塵装置および基板処理システム |
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JP2017148747A true JP2017148747A (ja) | 2017-08-31 |
JP6554045B2 JP6554045B2 (ja) | 2019-07-31 |
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JP (1) | JP6554045B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180277400A1 (en) * | 2017-03-23 | 2018-09-27 | Toshiba Memory Corporation | Semiconductor manufacturing apparatus |
CN111495098A (zh) * | 2020-01-22 | 2020-08-07 | 广东工业大学 | 一种微米颗粒二维聚集方法和聚集装置 |
WO2021230110A1 (ja) * | 2020-05-14 | 2021-11-18 | 東京エレクトロン株式会社 | 液供給機構、基板処理装置、及び基板処理方法 |
CN113905801A (zh) * | 2019-06-28 | 2022-01-07 | 韩国生产技术研究院 | 微细颗粒聚集方法及装置 |
JP7429052B2 (ja) | 2018-12-11 | 2024-02-07 | アエニティス テクノロジーズ | 流体中の粒子の濃度を変えるためのシステムおよび方法 |
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CN113905801A (zh) * | 2019-06-28 | 2022-01-07 | 韩国生产技术研究院 | 微细颗粒聚集方法及装置 |
CN111495098A (zh) * | 2020-01-22 | 2020-08-07 | 广东工业大学 | 一种微米颗粒二维聚集方法和聚集装置 |
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