JP2017139306A - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP2017139306A JP2017139306A JP2016018546A JP2016018546A JP2017139306A JP 2017139306 A JP2017139306 A JP 2017139306A JP 2016018546 A JP2016018546 A JP 2016018546A JP 2016018546 A JP2016018546 A JP 2016018546A JP 2017139306 A JP2017139306 A JP 2017139306A
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- 238000000151 deposition Methods 0.000 title abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 59
- 238000001179 sorption measurement Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 18
- 238000005121 nitriding Methods 0.000 claims description 19
- 238000010926 purge Methods 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims description 2
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 claims 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000006396 nitration reaction Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 199
- 235000012431 wafers Nutrition 0.000 description 92
- 239000010408 film Substances 0.000 description 68
- 238000000926 separation method Methods 0.000 description 37
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000002407 reforming Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101000735417 Homo sapiens Protein PAPPAS Proteins 0.000 description 1
- 102100034919 Protein PAPPAS Human genes 0.000 description 1
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000000274 adsorptive effect Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L21/02518—Deposited layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
Description
該NH2基が吸着した前記窪みパターンを含む前記基板の表面にN2を含む第2の処理ガスをプラズマ化して供給し、前記NH2基の一部をN基に変換する吸着サイト制御工程と、
シリコン含有ガスを前記NH2基及び前記N基が吸着した前記窪みパターンを含む前記基板の表面に供給し、前記NH2基に選択的に吸着させるシリコン吸着工程と、を有し、
前記窒化工程、前記吸着サイト制御工程及び前記シリコン吸着工程を周期的に複数回繰り返す。
図1に、本発明の実施形態に係る成膜方法を実施する成膜装置の一例の概略縦断面図を示す。また、図2に、本発明の実施形態に係る成膜方法を実施する成膜装置の一例の概略平面図を示す。なお、図2では、説明の便宜上、天板11の描画を省略している。
次に、本発明の実施形態に係る成膜方法について説明する。本発明の実施形態に係る成膜方法は、ALD法(Atomic Layer Deposition、原子層堆積方法)又はMLD法(Molecular Layer Deposition、分子層堆積方法)による成膜が可能な成膜装置であれば、種々の成膜装置により実施することができるが、本実施形態では、上述の回転テーブル式の成膜装置を用いて実施する例について説明する。
図11は、本発明の実施形態に係る成膜方法を実施した実施例の結果を、比較例とともに示した図である。比較例1、2及び実施例の結果が図1に示されている。
2 回転テーブル
15 搬送口
24 凹部
31 原料ガスノズル
32 第1のプラズマ処理用ガスノズル
33 第2のプラズマ処理用ガスノズル
41、42 分離ガスノズル
81a、81b プラズマ発生器
83 アンテナ
85 高周波電源
90 筐体
130 NH2基
131 N基
132 SiN膜
P1、P2、P3 処理領域
T トレンチ
W ウエハ
Claims (11)
- 基板の表面に形成された窪みパターン内にSiN膜を埋め込む成膜方法であって、
前記窪みパターンを含む前記基板の表面にNH3を含む第1の処理ガスをプラズマ化して供給し、前記窪みパターンを含む前記基板の表面にNH2基を吸着させる窒化工程と、
該NH2基が吸着した前記窪みパターンを含む前記基板の表面にN2を含む第2の処理ガスをプラズマ化して供給し、前記NH2基の一部をN基に変換する吸着サイト制御工程と、
シリコン含有ガスを前記NH2基及び前記N基が吸着した前記窪みパターンを含む前記基板の表面に供給し、前記NH2基に選択的に吸着させるシリコン吸着工程と、を有し、
前記窒化工程、前記吸着サイト制御工程及び前記シリコン吸着工程を周期的に複数回繰り返す成膜方法。 - 前記吸着サイト制御工程において、前記窪みパターンの上部及び前記基板の表面上に吸着した前記NH2基が前記N基に変換される請求項1に記載の成膜方法。
- 前記第1の処理ガスは、N2を含まないガスである請求項1又は2に記載の成膜方法。
- 前記第1の処理ガス及び前記第2の処理ガスは、Ar及びH2を更に含む請求項3に記載の成膜方法。
- 前記シリコン含有ガスは、ジクロロシランガス、ジシランガス、ヘキサクロロジシランガス、ジイソプロピルアミノシランガス、トリスジメチルアミノシランガス、ビスターシャルブチルアミノシランガスのいずれかである請求項1乃至4のいずれか一項に記載の成膜方法。
- 前記基板の温度は、前記窪みパターンを含む前記基板の表面をアンモニアラジカルで窒化できる400℃以上に設定された請求項1乃至5のいずれか一項に記載の成膜方法。
- プラズマ化された前記第2の処理ガスは、プラズマ化された前記第1の処理ガスよりも高いエネルギーを有する請求項1乃至6のいずれか一項に記載の成膜方法。
- 前記第1の処理ガスをプラズマ化する第1のプラズマは、前記第2の処理ガスをプラズマ化する第2のプラズマよりも前記基板の表面から離間した高い位置で生成される請求項7に記載の成膜方法。
- 前記吸着サイト制御工程と前記シリコン吸着工程との間、及び前記シリコン吸着工程と前記窒化工程との間に、前記窪みパターンを含む前記基板の表面にパージガスを供給するパージ工程を更に有する請求項1乃至8のいずれか一項に記載の成膜方法。
- 前記基板は、処理室内に設けられた回転テーブルの表面上に周方向に沿って配置され、
前記処理室内には、前記回転テーブルの上方に前記回転テーブルの回転方向に沿って前記窒化工程を実施する第1のプラズマ処理領域と、前記吸着サイト制御工程を実施する第2のプラズマ処理領域と、前記パージ工程を実施するパージ領域と、前記シリコン吸着工程を実施する吸着領域と、前記パージ工程を実施するパージ領域とが設けられ、
前記回転テーブルが回転することにより、前記窒化工程、前記吸着サイト制御工程、前記パージ工程、前記シリコン吸着工程及び前記パージ工程が前記窪みパターンを含む前記基板の表面に実施される請求項9に記載の成膜方法。 - 前記第1のプラズマ処理領域及び前記第2のプラズマ処理領域では、前記処理室の天井面に第1のプラズマ発生器及び第2のプラズマ発生器が設けられ、
前記第1のプラズマ発生器が、前記第2のプラズマ発生器よりも高い位置に設けられている請求項10に記載の成膜方法。
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108570656A (zh) * | 2018-05-16 | 2018-09-25 | 深圳市硅光半导体科技有限公司 | 一种氮化硅膜的制作方法及氮化硅膜 |
JP2019102670A (ja) * | 2017-12-04 | 2019-06-24 | 東京エレクトロン株式会社 | シリコン窒化膜の成膜方法及び成膜装置 |
JP2019149516A (ja) * | 2018-02-28 | 2019-09-05 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
JP2019220575A (ja) * | 2018-06-20 | 2019-12-26 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
KR20200007685A (ko) * | 2018-07-13 | 2020-01-22 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 |
JP2021061429A (ja) * | 2020-12-25 | 2021-04-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
KR20220036859A (ko) | 2020-09-16 | 2022-03-23 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 |
US11404265B2 (en) | 2019-01-30 | 2022-08-02 | Tokyo Electron Limited | Film deposition method |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170218517A1 (en) * | 2016-02-01 | 2017-08-03 | Tokyo Electron Limited | Method of forming nitride film |
JP6548586B2 (ja) | 2016-02-03 | 2019-07-24 | 東京エレクトロン株式会社 | 成膜方法 |
JP6584347B2 (ja) * | 2016-03-02 | 2019-10-02 | 東京エレクトロン株式会社 | 成膜方法 |
JP6733516B2 (ja) | 2016-11-21 | 2020-08-05 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP7259649B2 (ja) * | 2019-08-30 | 2023-04-18 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
KR20220021863A (ko) * | 2020-08-14 | 2022-02-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008140864A (ja) * | 2006-11-30 | 2008-06-19 | Tokyo Electron Ltd | シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム |
JP2008258591A (ja) * | 2007-02-27 | 2008-10-23 | Air Products & Chemicals Inc | ケイ素含有膜の周期的プラズマ化学気相堆積 |
JP2014078685A (ja) * | 2012-09-21 | 2014-05-01 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2015165549A (ja) * | 2014-02-10 | 2015-09-17 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP2015181149A (ja) * | 2014-03-06 | 2015-10-15 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法並びに記録媒体 |
JP2017092098A (ja) * | 2015-11-04 | 2017-05-25 | 東京エレクトロン株式会社 | 窒化膜の形成方法 |
JP2018533218A (ja) * | 2015-10-23 | 2018-11-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 表面毒化処理によるボトムアップ式間隙充填 |
Family Cites Families (92)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4854266A (en) | 1987-11-02 | 1989-08-08 | Btu Engineering Corporation | Cross-flow diffusion furnace |
US5225366A (en) | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
JPH04287912A (ja) | 1991-02-19 | 1992-10-13 | Mitsubishi Electric Corp | 半導体製造装置 |
JP3144664B2 (ja) | 1992-08-29 | 2001-03-12 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
US5620523A (en) | 1994-04-11 | 1997-04-15 | Canon Sales Co., Inc. | Apparatus for forming film |
US5744049A (en) | 1994-07-18 | 1998-04-28 | Applied Materials, Inc. | Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same |
US6340501B1 (en) | 1997-05-08 | 2002-01-22 | Matsushita Electric Industrial Co., Ltd. | Device and method for manufacturing an optical recording medium |
KR100253089B1 (ko) | 1997-10-29 | 2000-05-01 | 윤종용 | 반도체소자 제조용 화학기상증착장치 및 이의 구동방법, 그 공정챔버 세정공정 레시피 최적화방법 |
US5906354A (en) | 1998-01-12 | 1999-05-25 | Sigma Scientific Technology, Inc. | Ball valve for lethal gas or fluid service |
US5849088A (en) | 1998-01-16 | 1998-12-15 | Watkins-Johnson Company | Free floating shield |
JP4817210B2 (ja) | 2000-01-06 | 2011-11-16 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
US20020195056A1 (en) | 2000-05-12 | 2002-12-26 | Gurtej Sandhu | Versatile atomic layer deposition apparatus |
KR100458982B1 (ko) | 2000-08-09 | 2004-12-03 | 주성엔지니어링(주) | 회전형 가스분사기를 가지는 반도체소자 제조장치 및 이를이용한 박막증착방법 |
KR100469126B1 (ko) | 2002-06-05 | 2005-01-29 | 삼성전자주식회사 | 수소 함유량이 적은 박막 형성방법 |
US20060014384A1 (en) | 2002-06-05 | 2006-01-19 | Jong-Cheol Lee | Method of forming a layer and forming a capacitor of a semiconductor device having the same layer |
US6869641B2 (en) | 2002-07-03 | 2005-03-22 | Unaxis Balzers Ltd. | Method and apparatus for ALD on a rotary susceptor |
US7153542B2 (en) | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
KR100497748B1 (ko) | 2002-09-17 | 2005-06-29 | 주식회사 무한 | 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법 |
US7647886B2 (en) | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
KR100558922B1 (ko) | 2004-12-16 | 2006-03-10 | (주)퓨전에이드 | 박막 증착장치 및 방법 |
US7751921B2 (en) | 2004-12-28 | 2010-07-06 | Tokyo Electron Limited | Semiconductor manufacturing apparatus, method of detecting abnormality, identifying cause of abnormality, or predicting abnormality in the semiconductor manufacturing apparatus, and storage medium storing computer program for performing the method |
JP4941921B2 (ja) * | 2005-03-14 | 2012-05-30 | 株式会社アルバック | 選択W−CVD法及びCu多層配線の製作法 |
US8129290B2 (en) | 2005-05-26 | 2012-03-06 | Applied Materials, Inc. | Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure |
US8475624B2 (en) | 2005-09-27 | 2013-07-02 | Lam Research Corporation | Method and system for distributing gas for a bevel edge etcher |
US20070218701A1 (en) | 2006-03-15 | 2007-09-20 | Asm Japan K.K. | Semiconductor-processing apparatus with rotating susceptor |
US20070215036A1 (en) | 2006-03-15 | 2007-09-20 | Hyung-Sang Park | Method and apparatus of time and space co-divided atomic layer deposition |
US20070218702A1 (en) | 2006-03-15 | 2007-09-20 | Asm Japan K.K. | Semiconductor-processing apparatus with rotating susceptor |
US8257503B2 (en) | 2008-05-02 | 2012-09-04 | Lam Research Corporation | Method and apparatus for detecting plasma unconfinement |
US20090324826A1 (en) | 2008-06-27 | 2009-12-31 | Hitoshi Kato | Film Deposition Apparatus, Film Deposition Method, and Computer Readable Storage Medium |
US8465592B2 (en) | 2008-08-25 | 2013-06-18 | Tokyo Electron Limited | Film deposition apparatus |
US8465591B2 (en) | 2008-06-27 | 2013-06-18 | Tokyo Electron Limited | Film deposition apparatus |
US8808456B2 (en) | 2008-08-29 | 2014-08-19 | Tokyo Electron Limited | Film deposition apparatus and substrate process apparatus |
US9416448B2 (en) | 2008-08-29 | 2016-08-16 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method |
JP5195175B2 (ja) | 2008-08-29 | 2013-05-08 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5423205B2 (ja) | 2008-08-29 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜装置 |
JP5253933B2 (ja) | 2008-09-04 | 2013-07-31 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及び記憶媒体 |
JP5280964B2 (ja) | 2008-09-04 | 2013-09-04 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及び記憶媒体 |
JP5276388B2 (ja) | 2008-09-04 | 2013-08-28 | 東京エレクトロン株式会社 | 成膜装置及び基板処理装置 |
JP2010084230A (ja) | 2008-09-04 | 2010-04-15 | Tokyo Electron Ltd | 成膜装置、基板処理装置及び回転テーブル |
JP2010087467A (ja) | 2008-09-04 | 2010-04-15 | Tokyo Electron Ltd | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
US8961691B2 (en) | 2008-09-04 | 2015-02-24 | Tokyo Electron Limited | Film deposition apparatus, film deposition method, computer readable storage medium for storing a program causing the apparatus to perform the method |
JP5253932B2 (ja) | 2008-09-04 | 2013-07-31 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及び記憶媒体 |
JP5107185B2 (ja) | 2008-09-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
JP5062144B2 (ja) | 2008-11-10 | 2012-10-31 | 東京エレクトロン株式会社 | ガスインジェクター |
JP5445044B2 (ja) | 2008-11-14 | 2014-03-19 | 東京エレクトロン株式会社 | 成膜装置 |
JP2010153769A (ja) | 2008-11-19 | 2010-07-08 | Tokyo Electron Ltd | 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 |
JP2010126797A (ja) | 2008-11-28 | 2010-06-10 | Tokyo Electron Ltd | 成膜装置、半導体製造装置、これらに用いられるサセプタ、プログラム、およびコンピュータ可読記憶媒体 |
US9297072B2 (en) | 2008-12-01 | 2016-03-29 | Tokyo Electron Limited | Film deposition apparatus |
JP5056735B2 (ja) | 2008-12-02 | 2012-10-24 | 東京エレクトロン株式会社 | 成膜装置 |
JP5083193B2 (ja) | 2008-12-12 | 2012-11-28 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5181100B2 (ja) | 2009-04-09 | 2013-04-10 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
JP5131240B2 (ja) | 2009-04-09 | 2013-01-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5444961B2 (ja) | 2009-09-01 | 2014-03-19 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP5257328B2 (ja) | 2009-11-04 | 2013-08-07 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
JP5310512B2 (ja) | 2009-12-02 | 2013-10-09 | 東京エレクトロン株式会社 | 基板処理装置 |
JP5553588B2 (ja) | 2009-12-10 | 2014-07-16 | 東京エレクトロン株式会社 | 成膜装置 |
US8034723B2 (en) | 2009-12-25 | 2011-10-11 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
JP5327147B2 (ja) | 2009-12-25 | 2013-10-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5482196B2 (ja) * | 2009-12-25 | 2014-04-23 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5497423B2 (ja) | 2009-12-25 | 2014-05-21 | 東京エレクトロン株式会社 | 成膜装置 |
JP5423529B2 (ja) | 2010-03-29 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP2012054508A (ja) | 2010-09-03 | 2012-03-15 | Tokyo Electron Ltd | 成膜装置 |
JP5524139B2 (ja) | 2010-09-28 | 2014-06-18 | 東京エレクトロン株式会社 | 基板位置検出装置、これを備える成膜装置、および基板位置検出方法 |
JP5579009B2 (ja) | 2010-09-29 | 2014-08-27 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
JP5599350B2 (ja) | 2011-03-29 | 2014-10-01 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP5712874B2 (ja) | 2011-09-05 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5679581B2 (ja) | 2011-12-27 | 2015-03-04 | 東京エレクトロン株式会社 | 成膜方法 |
JP5803706B2 (ja) | 2012-02-02 | 2015-11-04 | 東京エレクトロン株式会社 | 成膜装置 |
JP5803714B2 (ja) | 2012-02-09 | 2015-11-04 | 東京エレクトロン株式会社 | 成膜装置 |
WO2013137115A1 (ja) | 2012-03-15 | 2013-09-19 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP5823922B2 (ja) | 2012-06-14 | 2015-11-25 | 東京エレクトロン株式会社 | 成膜方法 |
JP6011417B2 (ja) | 2012-06-15 | 2016-10-19 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置及び成膜方法 |
JP5859927B2 (ja) | 2012-07-13 | 2016-02-16 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP5939147B2 (ja) | 2012-12-14 | 2016-06-22 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置及び成膜方法 |
JP6118102B2 (ja) | 2012-12-21 | 2017-04-19 | 東京エレクトロン株式会社 | 基板位置検出装置及びこれを用いた基板処理装置、成膜装置 |
JP6101083B2 (ja) | 2013-01-16 | 2017-03-22 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
TWI614813B (zh) | 2013-01-21 | 2018-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
JP5971144B2 (ja) | 2013-02-06 | 2016-08-17 | 東京エレクトロン株式会社 | 基板処理装置及び成膜方法 |
US10573511B2 (en) * | 2013-03-13 | 2020-02-25 | Asm Ip Holding B.V. | Methods for forming silicon nitride thin films |
US20140273530A1 (en) | 2013-03-15 | 2014-09-18 | Victor Nguyen | Post-Deposition Treatment Methods For Silicon Nitride |
JP6114708B2 (ja) | 2013-05-27 | 2017-04-12 | 東京エレクトロン株式会社 | 基板脱離検出装置及び基板脱離検出方法、並びにこれらを用いた基板処理装置及び基板処理方法 |
JP6118197B2 (ja) | 2013-07-02 | 2017-04-19 | 東京エレクトロン株式会社 | 成膜方法 |
JP2015056632A (ja) | 2013-09-13 | 2015-03-23 | 東京エレクトロン株式会社 | シリコン酸化膜の製造方法 |
JP6114668B2 (ja) | 2013-09-18 | 2017-04-12 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
KR101551199B1 (ko) | 2013-12-27 | 2015-09-10 | 주식회사 유진테크 | 사이클릭 박막 증착 방법 및 반도체 제조 방법, 그리고 반도체 소자 |
JP6204213B2 (ja) | 2014-01-28 | 2017-09-27 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
US9214333B1 (en) | 2014-09-24 | 2015-12-15 | Lam Research Corporation | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD |
US9564312B2 (en) * | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
JP6548586B2 (ja) | 2016-02-03 | 2019-07-24 | 東京エレクトロン株式会社 | 成膜方法 |
US10319583B2 (en) | 2016-03-13 | 2019-06-11 | Applied Materials, Inc. | Selective deposition of silicon nitride films for spacer applications |
JP6778144B2 (ja) | 2017-04-25 | 2020-10-28 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
JP7203515B2 (ja) | 2017-06-06 | 2023-01-13 | アプライド マテリアルズ インコーポレイテッド | 連続した堆積-エッチング-処理方法を使用した酸化ケイ素及び窒化ケイ素のボトムアップ成長 |
-
2016
- 2016-02-03 JP JP2016018546A patent/JP6548586B2/ja active Active
-
2017
- 2017-01-31 US US15/420,333 patent/US10480067B2/en active Active
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008140864A (ja) * | 2006-11-30 | 2008-06-19 | Tokyo Electron Ltd | シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム |
JP2008258591A (ja) * | 2007-02-27 | 2008-10-23 | Air Products & Chemicals Inc | ケイ素含有膜の周期的プラズマ化学気相堆積 |
JP2014078685A (ja) * | 2012-09-21 | 2014-05-01 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2015165549A (ja) * | 2014-02-10 | 2015-09-17 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP2015181149A (ja) * | 2014-03-06 | 2015-10-15 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法並びに記録媒体 |
JP2018533218A (ja) * | 2015-10-23 | 2018-11-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 表面毒化処理によるボトムアップ式間隙充填 |
JP2017092098A (ja) * | 2015-11-04 | 2017-05-25 | 東京エレクトロン株式会社 | 窒化膜の形成方法 |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019102670A (ja) * | 2017-12-04 | 2019-06-24 | 東京エレクトロン株式会社 | シリコン窒化膜の成膜方法及び成膜装置 |
CN113846311A (zh) * | 2018-02-28 | 2021-12-28 | 株式会社国际电气 | 半导体器件的制造方法、衬底处理方法、衬底处理装置及记录介质 |
JP2019149516A (ja) * | 2018-02-28 | 2019-09-05 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
US12009201B2 (en) | 2018-02-28 | 2024-06-11 | Kokusai Electric Corporation | Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US10770287B2 (en) | 2018-02-28 | 2020-09-08 | Kokusai Electric Corporation | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US11664217B2 (en) | 2018-02-28 | 2023-05-30 | Kokusai Electric Corporation | Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium |
US11056337B2 (en) | 2018-02-28 | 2021-07-06 | Kokusai Electric Corporation | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
CN108570656A (zh) * | 2018-05-16 | 2018-09-25 | 深圳市硅光半导体科技有限公司 | 一种氮化硅膜的制作方法及氮化硅膜 |
CN108570656B (zh) * | 2018-05-16 | 2020-02-18 | 深圳市硅光半导体科技有限公司 | 一种氮化硅膜的制作方法及氮化硅膜 |
JP2019220575A (ja) * | 2018-06-20 | 2019-12-26 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
JP2020012136A (ja) * | 2018-07-13 | 2020-01-23 | 東京エレクトロン株式会社 | 成膜方法 |
JP7085929B2 (ja) | 2018-07-13 | 2022-06-17 | 東京エレクトロン株式会社 | 成膜方法 |
KR102454904B1 (ko) * | 2018-07-13 | 2022-10-17 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 |
US11952661B2 (en) | 2018-07-13 | 2024-04-09 | Tokyo Electron Limited | Deposition method |
KR20200007685A (ko) * | 2018-07-13 | 2020-01-22 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 |
US11404265B2 (en) | 2019-01-30 | 2022-08-02 | Tokyo Electron Limited | Film deposition method |
KR20220036859A (ko) | 2020-09-16 | 2022-03-23 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 |
US11837465B2 (en) | 2020-09-16 | 2023-12-05 | Tokyo Electron Limited | Deposition method |
JP7486387B2 (ja) | 2020-09-16 | 2024-05-17 | 東京エレクトロン株式会社 | 成膜方法 |
JP7026200B2 (ja) | 2020-12-25 | 2022-02-25 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム |
JP2021061429A (ja) * | 2020-12-25 | 2021-04-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
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US10480067B2 (en) | 2019-11-19 |
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