JP2017135148A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2017135148A
JP2017135148A JP2016011510A JP2016011510A JP2017135148A JP 2017135148 A JP2017135148 A JP 2017135148A JP 2016011510 A JP2016011510 A JP 2016011510A JP 2016011510 A JP2016011510 A JP 2016011510A JP 2017135148 A JP2017135148 A JP 2017135148A
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metal pattern
mounting
mounting terminal
resin substrate
wire bonding
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Japanese (ja)
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佳織 立花
Yoshiori Tachibana
佳織 立花
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

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  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents disconnection of a wire due to thermal expansion/contraction of a resin substrate.SOLUTION: A semiconductor device comprises: an LED element mounting metal pattern 11, a ZD element mounting metal pattern 12, a connection metal pattern 13 and a wire bonding metal pattern 14 which are formed on a surface side of a resin substrate 1; a first mounting terminal metal pattern 15' and a second mounting terminal metal pattern 16' which are formed on a rear face side of the resin substrate 1 across an inclined boundary part B2'; a metal structure 17' which electrically connects the LED element mounting metal pattern 11 and the first mounting terminal metal pattern 15'; and a metal via 18 which electrically connects the wire bonding metal pattern 14 and the second mounting terminal metal pattern 16'. The second mounting terminal metal pattern 16' faces the ZD element mounting metal pattern 12, the wire mounting metal pattern 14 and a part of the LED element mounting metal pattern 11.SELECTED DRAWING: Figure 1

Description

本発明は複数の半導体素子を搭載した半導体装置に関する。たとえば、半導体素子としては、発光ダイオード（ＬＥＤ）素子、レーザダイオード（ＬＤ）素子等の半導体発光素子、フォトダイオード（ＰＤ）素子等の半導体受光素子、及びツェナーダイオード（ＺＤ）素子等の逆電圧保護素子がある。   The present invention relates to a semiconductor device equipped with a plurality of semiconductor elements. For example, as semiconductor elements, reverse voltage protection such as light emitting diode (LED) elements, semiconductor light emitting elements such as laser diode (LD) elements, semiconductor light receiving elements such as photodiode (PD) elements, and zener diode (ZD) elements. There are elements.

従来の半導体装置として樹脂基板を有するものがある（参照：特許文献１）。この樹脂基板の表面側において、電極パッド上にＬＥＤ素子及びＺＤ素子を搭載し、ＬＥＤ素子の一電極及びＺＤ素子の一電極は上記電極パッドから離間した他の電極パッド上にワイヤによって電気的に接続される。表面側のＬＥＤ素子が搭載された電極パッドと裏面側の電極パッドとはＬＥＤ素子の底面積より大きい断面積の延長部によって接続され、また、表面側の他の電極パッドと裏面側の他の電極パッドとは小さい断面積の電極によって接続される。これにより、ＬＥＤ素子から発生する熱をＬＥＤ素子の底面積より大きい断面積の延長部によって放熱し、高密度実装による熱的悪影響を排除する。   Some conventional semiconductor devices have a resin substrate (see Patent Document 1). On the surface side of the resin substrate, an LED element and a ZD element are mounted on an electrode pad, and one electrode of the LED element and one electrode of the ZD element are electrically connected to another electrode pad spaced apart from the electrode pad by a wire. Connected. The electrode pad on which the LED element on the front surface side is mounted and the electrode pad on the back surface side are connected by an extension of a cross-sectional area larger than the bottom area of the LED element, and the other electrode pad on the front surface side and the other electrode on the back surface side The electrode pad is connected by an electrode having a small cross-sectional area. As a result, heat generated from the LED element is dissipated by the extension of the cross-sectional area larger than the bottom area of the LED element, and the adverse thermal effects due to high-density mounting are eliminated.

図５は上述の従来の半導体装置に類似した比較例としての半導体装置を示し、（Ａ）は上面図、（Ｂ）は（Ａ）の樹脂基板の表面側金属パターン図、（Ｃ）は（Ａ）の樹脂基板の裏面側金属パターン図である。また、図６は図５の半導体装置の断面図であり、（Ａ）は図５の（Ａ）のＡ−Ａ線断面図、（Ｂ）は図５の（Ａ）のＢ−Ｂ線断面図である。   5A and 5B show a semiconductor device as a comparative example similar to the above-described conventional semiconductor device, in which FIG. 5A is a top view, FIG. 5B is a metal pattern diagram on the surface side of the resin substrate of FIG. It is a back side metal pattern figure of the resin substrate of A). 6 is a cross-sectional view of the semiconductor device of FIG. 5, (A) is a cross-sectional view taken along line AA in FIG. 5 (A), and (B) is a cross-sectional view taken along line BB in FIG. 5 (A). FIG.

図５、図６に示すように、樹脂基板１の表面側には、矩形状のＬＥＤ素子搭載用金属パターン１１、ＬＥＤ素子搭載用金属パターン１１より小さい矩形状のＺＤ素子搭載用金属パターン１２、ＬＥＤ素子搭載用金属パターン１１とＺＤ素子搭載用金属パターン１２とを電気的に接続する接続用金属パターン１３、及びワイヤボンディング用金属パターン１４が形成される。この場合、ワイヤボンディング用金属パターン１４はＬＥＤ素子２のＺＤ素子３側の領域にあって、ＺＤ素子３が配置されていない領域に配置される。つまり、図５の（Ｂ）において、ワイヤボンディング用金属パターン１４はＬＥＤ素子搭載用金属パターン１１の右側かつＺＤ素子搭載用金属パターン１２の下側に配置される。また、ワイヤボンディング用金属パターン１４は、ＬＥＤ素子搭載用金属パターン１１より小さい。尚、ＺＤ素子搭載用金属パターン１２、ワイヤボンディング用金属パターン１４は樹脂基板１のエッジまで延在させてもよい。   As shown in FIGS. 5 and 6, a rectangular LED element mounting metal pattern 11 and a rectangular ZD element mounting metal pattern 12 smaller than the LED element mounting metal pattern 11 are formed on the surface side of the resin substrate 1. A connection metal pattern 13 and a wire bonding metal pattern 14 for electrically connecting the LED element mounting metal pattern 11 and the ZD element mounting metal pattern 12 are formed. In this case, the wire bonding metal pattern 14 is disposed in a region on the ZD element 3 side of the LED element 2 and in a region where the ZD element 3 is not disposed. That is, in FIG. 5B, the wire bonding metal pattern 14 is disposed on the right side of the LED element mounting metal pattern 11 and below the ZD element mounting metal pattern 12. The wire bonding metal pattern 14 is smaller than the LED element mounting metal pattern 11. The ZD element mounting metal pattern 12 and the wire bonding metal pattern 14 may extend to the edge of the resin substrate 1.

他方、樹脂基板１の裏面側には、極性が異なる大きい第１の実装端子用金属パターン１５及び小さい第２の実装端子用金属パターン１６が形成される。この場合、第１の実装端子用金属パターン１５はＬＥＤ素子搭載用金属パターン１１に対向している。また、第２の実装端子用金属パターン１６はＺＤ素子搭載用金属パターン１２及びワイヤボンディング用金属パターン１４に対向している。   On the other hand, a large first mounting terminal metal pattern 15 and a small second mounting terminal metal pattern 16 having different polarities are formed on the back side of the resin substrate 1. In this case, the first mounting terminal metal pattern 15 faces the LED element mounting metal pattern 11. The second mounting terminal metal pattern 16 faces the ZD element mounting metal pattern 12 and the wire bonding metal pattern 14.

図６に示すように、ＬＥＤ素子搭載用金属パターン１１と第１の実装端子用金属パターン１５とは大きい断面積の金属構造体１７によって電気的に接続される。また、ワイヤボンディング用金属パターン１４と第２の実装端子用金属パターン１６とは小さい断面積の金属ビア１８によって電気的に接続される。金属ビア１８は、ワイヤボンディング用金属パターン１４において、ワイヤ４１、４２、４３の接続領域を避けて配置される。尚、金属構造体１７及び金属ビア１８は同一層によって形成できる。また、金属ビア１８を設けずに、ワイヤボンディング用金属パターン１４と第２の実装端子用金属パターン１６とを基板側面に形成した配線を介して接続してもよい。   As shown in FIG. 6, the LED element mounting metal pattern 11 and the first mounting terminal metal pattern 15 are electrically connected by a metal structure 17 having a large cross-sectional area. The wire bonding metal pattern 14 and the second mounting terminal metal pattern 16 are electrically connected by a metal via 18 having a small cross-sectional area. The metal via 18 is arranged in the wire bonding metal pattern 14 so as to avoid the connection region of the wires 41, 42, and 43. The metal structure 17 and the metal via 18 can be formed of the same layer. Further, without providing the metal via 18, the wire bonding metal pattern 14 and the second mounting terminal metal pattern 16 may be connected via a wiring formed on the side surface of the substrate.

矩形状のＬＥＤ素子２はその一電極を下にしてＬＥＤ素子搭載用金属パターン１１上に搭載され、また、ＬＥＤ素子２より小さい矩形状のＺＤ素子３はその一電極を下にしてＺＤ素子搭載用金属パターン１２上に搭載される。この場合、ＬＥＤ素子２及びＺＤ素子３は、ＬＥＤ素子２の一辺とＺＤ素子３の一辺とが略直線上に位置すると共に樹脂基板１の一辺と平行となるように、樹脂基板１上に配置される。   The rectangular LED element 2 is mounted on the LED element mounting metal pattern 11 with one electrode facing down, and the rectangular ZD element 3 smaller than the LED element 2 is mounted on the ZD element with one electrode facing down. It is mounted on the metal pattern 12 for use. In this case, the LED element 2 and the ZD element 3 are arranged on the resin substrate 1 so that one side of the LED element 2 and one side of the ZD element 3 are positioned on a substantially straight line and parallel to one side of the resin substrate 1. Is done.

ＬＥＤ素子２の上面の他電極はワイヤ４１、４２によってワイヤボンディング用金属パターン１４に電気的に接続され、また、ＺＤ素子３の上面の他電極もワイヤ４３によってワイヤボンディング用金属パターン１４に接続される。これにより、ＬＥＤ素子２とＺＤ素子３とは樹脂基板１のパターンに対して逆並列に接続される。この場合、ワイヤ４１、４２、４３は第１ボンディングをワイヤボンディング用金属パターン１４に対して行い、第２ボンディングをＬＥＤ素子２及びＺＤ素子３に対して行う。第１ボンディングはボールボンド工程で行い、第２ボンディングはステッチボンド工程で行う。始めに、ボールボンド工程では、ボンディング装置のキャピラリの先端から繰り出したワイヤの先端に金ボールを形成し、超音波を伴ってワイヤボンディング用金属パターン１４上に熱圧着し、ボール接続部を形成する。次に、ステッチボンド工程にて、キャピラリを樹脂基板１の主面に対して垂直に引き上げた後、ワイヤを延ばしながらＬＥＤ素子２又はＺＤ素子３上まで水平に移動し、ＬＥＤ素子２又はＺＤ素子３上に超音波を伴って熱圧着後、ワイヤを引き上げて切断し、ステッチ接続部を形成する。従って、ワイヤ４１、４２、４３は、たとえば図６の（Ｂ）に示すごとく、ワイヤボンディング用金属パターン１４に対してほぼ垂直に立上り、ＬＥＤ素子２及びＺＤ素子３に対してほぼ水平となる。このようにして、ワイヤ４１、４２、４３の高さを低くすることにより半導体装置の薄型化を図っている。尚、ワイヤたとえば４２のワイヤボンディング用金属パターン１４との接続部分近傍（付け根部分）は、ボール部４２ａ、及びボール部４２ａ直上の他の領域より結晶粒度が大きいために力学的物性が弱い再結晶化部４２ｂよりなる。つまり、ボールボンド工程及びステッチボンド工程よりなるワイヤボンディング工程において、先端が溶融してボール状になったワイヤをワイヤボンディング用金属パターン１４に固着した第１のボンディング後に、ワイヤを延ばし、もう一方の端部をＬＥＤ素子２又はＺＤ素子３上に押し付ける第２ボンディングを行い、超音波を印加して固着する。従って、溶融固着させたワイヤのワイヤボンディング用金属パターン１４との接続部分近傍は、溶融させていない部分と異なり、金属の再結晶化が発生し、力学的物性の弱い再結晶化部となる。   The other electrode on the upper surface of the LED element 2 is electrically connected to the wire bonding metal pattern 14 by wires 41 and 42, and the other electrode on the upper surface of the ZD element 3 is also connected to the wire bonding metal pattern 14 by wires 43. The Thereby, the LED element 2 and the ZD element 3 are connected in antiparallel to the pattern of the resin substrate 1. In this case, the wires 41, 42 and 43 perform the first bonding to the wire bonding metal pattern 14 and perform the second bonding to the LED element 2 and the ZD element 3. The first bonding is performed by a ball bonding process, and the second bonding is performed by a stitch bonding process. First, in the ball bonding step, a gold ball is formed on the tip of the wire fed from the tip of the capillary of the bonding apparatus, and thermocompression-bonded on the wire bonding metal pattern 14 with ultrasonic waves to form a ball connection portion. . Next, in the stitch bonding process, the capillary is pulled up perpendicularly to the main surface of the resin substrate 1 and then moved horizontally to the LED element 2 or the ZD element 3 while extending the wire. After thermocompression bonding with ultrasonic waves on the wire 3, the wire is pulled up and cut to form a stitch connection portion. Accordingly, the wires 41, 42, 43 rise substantially perpendicular to the wire bonding metal pattern 14 and become substantially horizontal to the LED element 2 and the ZD element 3, for example, as shown in FIG. In this way, the height of the wires 41, 42, 43 is reduced to reduce the thickness of the semiconductor device. In the vicinity of the connection portion (base portion) of the wire, for example, the wire bonding metal pattern 14, the crystal grain size is larger than that of the ball portion 42 a and other regions immediately above the ball portion 42 a, so that recrystallization is weak. It consists of the conversion part 42b. That is, in the wire bonding process including the ball bonding process and the stitch bonding process, the wire is extended after the first bonding in which the wire whose tip is melted and formed into a ball shape is fixed to the metal pattern 14 for wire bonding, Second bonding is performed by pressing the end portion onto the LED element 2 or the ZD element 3, and ultrasonic waves are applied to fix the edge. Therefore, in the vicinity of the portion where the fused and fixed wire is connected to the wire bonding metal pattern 14, unlike the portion where the wire is not melted, recrystallization of the metal occurs, resulting in a recrystallized portion having weak mechanical properties.

ＬＥＤ素子２とＺＤ素子３とは極性の異なる第１の実装端子用金属パターン１５、第２の実装端子用金属パターン１６間に電気的に逆並列接続される。   The LED element 2 and the ZD element 3 are electrically connected in reverse parallel between the first mounting terminal metal pattern 15 and the second mounting terminal metal pattern 16 having different polarities.

図５、図６の比較例としての半導体装置においては、樹脂基板１の表面側金属パターン１１、１２、１３、１４と裏面側金属パターン１５、１６とをできる限り対峙させて樹脂基板１のみで外部応力に対応する領域を少なくし、樹脂基板１が変形して封止部材（図示せず）にクラックが発生するのを防止できるようにする。但し、全体のサイズを小さくするために、表面側金属パターン１１、１４の正負の境界部Ｂ１と裏面側金属パターン１５、１６の正負の境界部Ｂ２とは重複している。   In the semiconductor device as a comparative example of FIGS. 5 and 6, the front surface side metal patterns 11, 12, 13 and 14 of the resin substrate 1 and the back surface side metal patterns 15 and 16 are opposed to each other as much as possible, and only the resin substrate 1 is used. The region corresponding to the external stress is reduced so that the resin substrate 1 can be prevented from being deformed and cracking in the sealing member (not shown). However, in order to reduce the overall size, the positive / negative boundary portion B1 of the front surface side metal patterns 11, 14 and the positive / negative boundary portion B2 of the rear surface side metal patterns 15, 16 overlap.

特開２００８−７１９５５号公報JP 2008-71955 A

しかしながら、上述の比較例としての図５、図６の半導体装置においては、樹脂基板１の熱応力による膨張収縮によってワイヤ４１、４２、４３が捩れて断線する課題がある。つまり、図６の（Ａ）に示すごとく、ＬＥＤ素子搭載用金属パターン１１とＺＤ素子搭載用金属パターン１２との間の樹脂基板１の部分は接続用金属パターン１３によって補強されて熱応力による膨張収縮が抑制されている。他方、図６の（Ｂ）に示すごとく、ＬＥＤ素子搭載用金属パターン１１とワイヤボンディング用金属パターン１４との境界部Ｂ１の樹脂基板１の部分は金属パターンを有していないので、熱応力による膨張収縮Ｚ６が比較的大きい。従って、ワイヤボンディング用金属パターン１４側の樹脂基板１の部分は、熱応力による膨張収縮が小さいＺＤ素子３側の樹脂基板１の部分を中心にして、図５の（Ａ）の矢印Ｚ５に示すごとく、平面方向に大きく湾曲する。この結果、ワイヤ４１、４２、４３の捩り方向の負荷が大きくなり、特に、ワイヤボンディング用金属パターン１４上のワイヤ４１、４２、４３の１次ボンディング側の付け根の再結晶化部において細線化や断線する可能性がある。   However, in the semiconductor device of FIGS. 5 and 6 as the comparative example described above, there is a problem that the wires 41, 42, and 43 are twisted and disconnected due to expansion and contraction due to thermal stress of the resin substrate 1. That is, as shown in FIG. 6A, the portion of the resin substrate 1 between the LED element mounting metal pattern 11 and the ZD element mounting metal pattern 12 is reinforced by the connection metal pattern 13 and expanded due to thermal stress. Shrinkage is suppressed. On the other hand, as shown in FIG. 6B, the resin substrate 1 portion of the boundary portion B1 between the LED element mounting metal pattern 11 and the wire bonding metal pattern 14 does not have a metal pattern. Expansion and contraction Z6 is relatively large. Therefore, the portion of the resin substrate 1 on the side of the metal pattern 14 for wire bonding is indicated by an arrow Z5 in FIG. 5A centering on the portion of the resin substrate 1 on the side of the ZD element 3 that is small in expansion and contraction due to thermal stress. Thus, it is greatly curved in the plane direction. As a result, the load in the twisting direction of the wires 41, 42, 43 is increased, and in particular, in the recrystallization portion at the base of the wires 41, 42, 43 on the primary bonding side of the wires 41, 42, 43 on the wire bonding metal pattern 14, There is a possibility of disconnection.

上述の課題を解決するために、本発明に係る半導体装置は、樹脂基板と、第１、第２の半導体素子と、樹脂基板の表面側に設けられた、第１の半導体素子を搭載する第１の素子搭載用金属パターン、第２の半導体素子を搭載する第２の素子搭載用金属パターン、第１の素子搭載用金属パターンと第２の素子搭載用金属パターンとを接続する接続用金属パターン、及び第１、第２の半導体素子にワイヤによって接続されたワイヤボンディング用金属パターンと、樹脂基板の裏面側に設けられた、第１の素子搭載用金属パターンの一部に対向した第１の実装端子用金属パターン並びに第２の素子搭載用金属パターン、ワイヤボンディング用金属パターン及び第１の素子搭載用金属パターンの他の一部に対向した第２の実装端子用金属パターンと、第１の素子搭載用金属パターンと第１の実装端子用金属パターンとを電気的に接続する金属構造体と、ワイヤボンディング用金属パターンと第２の実装端子用金属パターンとを電気的に接続する配線とを具備し、第１の素子搭載用金属パターンの他の一部は第１の素子搭載用金属パターンの一部に比較してワイヤボンディング用金属パターンに近接しているものである。   In order to solve the above-described problem, a semiconductor device according to the present invention includes a resin substrate, first and second semiconductor elements, and a first semiconductor element mounted on the surface side of the resin substrate. 1 element mounting metal pattern, a second element mounting metal pattern for mounting a second semiconductor element, and a connection metal pattern for connecting the first element mounting metal pattern and the second element mounting metal pattern , And a wire bonding metal pattern connected to the first and second semiconductor elements by a wire, and a first element mounting metal pattern provided on the back side of the resin substrate and facing a part of the first element mounting metal pattern. A mounting terminal metal pattern, a second element mounting metal pattern, a wire bonding metal pattern, and a second mounting terminal metal pattern facing the other part of the first element mounting metal pattern; A metal structure that electrically connects the first element mounting metal pattern and the first mounting terminal metal pattern, and a wiring that electrically connects the wire bonding metal pattern and the second mounting terminal metal pattern The other part of the first element mounting metal pattern is closer to the wire bonding metal pattern than the part of the first element mounting metal pattern.

本発明によれば、第１の素子搭載用金属パターンと第２の素子搭載用金属パターンとの間の樹脂基板の部分は接続用金属パターンで補強されて熱応力による膨張収縮が抑制されている一方、第１の素子搭載用金属パターンとワイヤボンディング用金属パターンとの境界部の樹脂基板の部分も第１の素子搭載用金属パターンとワイヤボンディング用金属パターンとを跨いだ第２の実装端子用金属パターンにで補強されて熱応力による膨張収縮が抑制されている。従って、ワイヤが捩り方向に受ける負荷は小さくなり、この結果、ワイヤの断線を防止できる。また、第１の実装端子用金属パターンの放熱性も確保できる。   According to the present invention, the portion of the resin substrate between the first element mounting metal pattern and the second element mounting metal pattern is reinforced with the connection metal pattern to suppress expansion and contraction due to thermal stress. On the other hand, the portion of the resin substrate at the boundary between the first element mounting metal pattern and the wire bonding metal pattern is also for the second mounting terminal straddling the first element mounting metal pattern and the wire bonding metal pattern. Expansion and contraction due to thermal stress is suppressed by being reinforced by the metal pattern. Therefore, the load that the wire receives in the twisting direction is reduced, and as a result, disconnection of the wire can be prevented. Moreover, the heat dissipation of the 1st metal pattern for mounting terminals is also securable.

本発明に係る半導体装置の実施の形態を示し、（Ａ）は上面図、（Ｂ）は（Ａ）の樹脂基板の表面側金属パターン図、（Ｃ）は（Ａ）の樹脂基板の裏面側金属パターン図である。1A and 1B show an embodiment of a semiconductor device according to the present invention, in which FIG. 1A is a top view, FIG. 1B is a metal pattern diagram on the front surface side of the resin substrate in FIG. It is a metal pattern figure. 図１の半導体装置の断面図であり、（Ａ）は図１の（Ａ）のＡ−Ａ線断面図、（Ｂ）は図１の（Ａ）のＢ−Ｂ線断面図である。2A is a cross-sectional view of the semiconductor device of FIG. 1, FIG. 1A is a cross-sectional view taken along line AA of FIG. 1A, and FIG. 1B is a cross-sectional view taken along line BB of FIG. 図１の半導体装置の完成状態を示す断面図である。FIG. 2 is a cross-sectional view showing a completed state of the semiconductor device of FIG. 1. 図１の（Ｃ）の樹脂基板の裏面側金属パターンの変更例を示す図である。It is a figure which shows the example of a change of the back surface side metal pattern of the resin substrate of (C) of FIG. 比較例としての半導体装置を示し、（Ａ）は上面図、（Ｂ）は（Ａ）の樹脂基板の表面側金属パターン図、（Ｃ）は（Ａ）の樹脂基板の裏面側金属パターン図である。The semiconductor device as a comparative example is shown, (A) is a top view, (B) is a front side metal pattern diagram of the resin substrate of (A), (C) is a rear side metal pattern diagram of the resin substrate of (A). is there. 図５の半導体装置の断面図であり、（Ａ）は図５の（Ａ）のＡ−Ａ線断面図、（Ｂ）は図５の（Ｂ）のＢ−Ｂ線断面図である。6A is a cross-sectional view of the semiconductor device of FIG. 5, wherein FIG. 5A is a cross-sectional view taken along line AA of FIG. 5A, and FIG. 5B is a cross-sectional view taken along line BB of FIG.

図１は本発明に係る半導体装置の実施の形態を示し、（Ａ）は上面図、（Ｂ）は（Ａ）の樹脂基板の表面側金属パターン図、（Ｃ）は（Ａ）の樹脂基板の裏面側金属パターン図、図２は図１の半導体装置の断面図であり、（Ａ）は図１の（Ａ）のＡ−Ａ線断面図、（Ｂ）は図１の（Ｂ）のＢ−Ｂ線断面図である。図１、図２においては、図５、図６の第１の実装端子用金属パターン１５、第２の実装端子用金属パターン１６及び金属構造体１７の代りに、第１の実装端子用金属パターン１５’、第２の実装端子用金属パターン１６’及び金属構造体１７’が設けられている。尚、第１の実装端子用金属パターン１５’、第２の実装端子用金属パターン１６’は、図１の（Ｂ）では上面視で点線で図示し、図１の（Ｃ）では下面視で実線で図示してある。   1A and 1B show an embodiment of a semiconductor device according to the present invention, in which FIG. 1A is a top view, FIG. 1B is a metal pattern diagram of the surface side of the resin substrate of FIG. 2 is a cross-sectional view of the semiconductor device of FIG. 1, FIG. 2A is a cross-sectional view taken along the line AA of FIG. 1A, and FIG. 2B is a cross-sectional view of FIG. It is a BB sectional view. 1 and 2, instead of the first mounting terminal metal pattern 15, the second mounting terminal metal pattern 16, and the metal structure 17 of FIGS. 5 and 6, a first mounting terminal metal pattern is used. 15 ′, a second mounting terminal metal pattern 16 ′ and a metal structure 17 ′ are provided. The first mounting terminal metal pattern 15 ′ and the second mounting terminal metal pattern 16 ′ are shown by dotted lines in the top view in FIG. 1B and in the bottom view in FIG. It is shown with a solid line.

図１、図２においては、第１の実装端子用金属パターン１５’はＬＥＤ素子搭載用金属パターン１１の一部に対向しており、これに伴い、金属構造体１７’の断面積は図６の金属構造体１７の断面積より小さくしてある。この場合、ＬＥＤ素子搭載用金属パターン１１の一部とは、ＬＥＤ素子搭載用金属パターン１１の後述のごとく５０％以上である。従って、金属構造体１７’の断面積は図６の金属構造体１７の断面積の５０％以上であり、これにより、第１の実装端子用金属パターン１５’の放熱性を確保する。尚、金属構造体１７’は、樹脂基板１の側面を介してＬＥＤ素子等採用金属パターン１１と第１の実装端子用金属パターン１５’との間を電気的に接続してもよい。また、ワイヤボンディング用金属パターン１４と第２の実装端子用金属パターン１６’とは金属ビア１８によって接続されているが、両者の間を樹脂基板１の側面を介した金属パターンを形成して電気的に接続してもよい。   In FIG. 1 and FIG. 2, the first mounting terminal metal pattern 15 ′ is opposed to a part of the LED element mounting metal pattern 11. Accordingly, the cross-sectional area of the metal structure 17 ′ is as shown in FIG. The cross-sectional area of the metal structure 17 is smaller. In this case, a part of the LED element mounting metal pattern 11 is 50% or more of the LED element mounting metal pattern 11 as described later. Therefore, the cross-sectional area of the metal structure 17 ′ is 50% or more of the cross-sectional area of the metal structure 17 in FIG. 6, thereby ensuring the heat dissipation of the first mounting terminal metal pattern 15 ′. The metal structure 17 ′ may electrically connect between the metal pattern 11 employing the LED element or the like and the first mounting terminal metal pattern 15 ′ via the side surface of the resin substrate 1. The wire bonding metal pattern 14 and the second mounting terminal metal pattern 16 ′ are connected by metal vias 18, and a metal pattern is formed between the two via the side surface of the resin substrate 1. May be connected.

また、図１、図２においては、第２の実装端子用金属パターン１６’は、ＺＤ素子搭載用金属パターン１２、ワイヤボンディング用金属パターン１４及びＬＥＤ素子搭載用金属パターン１１の他の一部に対向している。そして、ＬＥＤ素子搭載用金属パターン１１の第１の実装端子用金属パターン１５’に対向している一部よりも、第２の実装端子用金属パターン１６’に対向しているＬＥＤ素子搭載用金属パターン１１の他の一部の方が、ワイヤボンディング用金属パターン１４に対して近接した位置にある。つまり、第２の実装端子用金属パターン１６’は、上面視において、ＬＥＤ素子搭載用金属パターン１１及びワイヤボンディング用金属パターン１４に跨いで構成されている。この場合、第１の実装端子用金属パターン１５’と第２の実装端子用金属パターン１６’との境界部Ｂ２’は上面視で金属パターン１５’、１６’の配置方向に対して傾斜しており、ＬＥＤ素子搭載用金属パターン１１とワイヤボンディング用金属パターン１４との境界部Ｂ１と重複している部分は小さい。好ましくは、境界部Ｂ２’は上面視で境界部Ｂ１と重複していない。   1 and 2, the second mounting terminal metal pattern 16 ′ is formed on the other part of the ZD element mounting metal pattern 12, the wire bonding metal pattern 14, and the LED element mounting metal pattern 11. Opposite. Then, the LED element mounting metal that faces the second mounting terminal metal pattern 16 ′ rather than a part of the LED element mounting metal pattern 11 that faces the first mounting terminal metal pattern 15 ′. The other part of the pattern 11 is located closer to the wire bonding metal pattern 14. That is, the second mounting terminal metal pattern 16 ′ is configured to straddle the LED element mounting metal pattern 11 and the wire bonding metal pattern 14 in a top view. In this case, the boundary B2 ′ between the first mounting terminal metal pattern 15 ′ and the second mounting terminal metal pattern 16 ′ is inclined with respect to the arrangement direction of the metal patterns 15 ′ and 16 ′ in a top view. The portion overlapping the boundary portion B1 between the LED element mounting metal pattern 11 and the wire bonding metal pattern 14 is small. Preferably, the boundary B2 'does not overlap with the boundary B1 when viewed from above.

図２の（Ａ）に示すごとく、Ａ−Ａ線断面におけるＬＥＤ素子搭載用金属パターン１１とＺＤ素子搭載用金属パターン１２との間の樹脂基板１の部分は、金属構造体１７’に連続した接続用金属パターン１３によって補強されて熱応力による膨張収縮が抑制されている。他方、図２の（Ｂ）に示すごとく、Ｂ−Ｂ線断面におけるＬＥＤ素子搭載用金属パターン１１とワイヤボンディング用金属パターン１４との境界部Ｂ１の樹脂基板１の部分も、ＬＥＤ素子搭載用金属パターン１１及びワイヤボンディング用金属パターン１４に跨る第２の実装端子用金属パターン１６’によって補強されて熱応力による膨張収縮が抑制されている。   As shown in FIG. 2A, the portion of the resin substrate 1 between the LED element mounting metal pattern 11 and the ZD element mounting metal pattern 12 in the cross section taken along the line AA is continuous with the metal structure 17 ′. Expansion and contraction due to thermal stress is suppressed by being reinforced by the connecting metal pattern 13. On the other hand, as shown in FIG. 2B, the portion of the resin substrate 1 at the boundary B1 between the LED element mounting metal pattern 11 and the wire bonding metal pattern 14 in the cross section taken along the line BB is also the LED element mounting metal. The second mounting terminal metal pattern 16 ′ straddling the pattern 11 and the wire bonding metal pattern 14 is reinforced to suppress expansion and contraction due to thermal stress.

すなわち、図２の（Ｂ）に示すごとく、Ｂ−Ｂ線断面におけるＬＥＤ素子搭載用金属パターン１１とワイヤボンディング用金属パターン１４との境界部Ｂ１の樹脂基板１の表面側部分には、金属パターンが存在しない。しかし、このＬＥＤ素子搭載用金属パターン１１とワイヤボンディング用金属パターン１４との間の樹脂基板１の裏面側部分の熱応力による膨張収縮は、ＬＥＤ素子搭載用金属パターン１１及びワイヤボンディング用金属パターン１４の両方に対向する熱応力による膨張収縮がしにくい第２の実装端子用金属パターン１６’によって抑制される。従って、図２の（Ｂ）に示すごとく、膨張収縮Ｚ２は小さくなり、図１の（Ａ）の矢印Ｚ１に示す平面方向の湾曲は小さくなる。この結果、ワイヤ４１、４２、４３が捩り方向に受ける負荷は小さくなり、ワイヤ４１、４２、４３の断線を防止できる。   That is, as shown in FIG. 2B, the metal pattern is formed on the surface side portion of the resin substrate 1 at the boundary B1 between the LED element mounting metal pattern 11 and the wire bonding metal pattern 14 in the cross section taken along the line BB. Does not exist. However, the expansion and contraction due to the thermal stress of the back side portion of the resin substrate 1 between the LED element mounting metal pattern 11 and the wire bonding metal pattern 14 is caused by the LED element mounting metal pattern 11 and the wire bonding metal pattern 14. It is suppressed by the second mounting terminal metal pattern 16 ′ that hardly expands and contracts due to thermal stress that faces both of them. Therefore, as shown in FIG. 2B, the expansion and contraction Z2 is reduced, and the curvature in the plane direction indicated by the arrow Z1 in FIG. As a result, the load that the wires 41, 42, 43 receive in the twisting direction is reduced, and disconnection of the wires 41, 42, 43 can be prevented.

本願発明者は、図５、図６の半導体装置をアルミニウム等よりなるプリント配線基板上に半田付けして−４０℃〜＋１２５℃の熱衝撃サイクル試験を行った。この結果、図５、図６の半導体装置では、所定サイクルにてワイヤの断線が生じた。つまり、図５、図６の半導体装置では、熱衝撃サイクルによる樹脂基板１の湾曲により再結晶化部の細線化が起こったものと考えられる。これに対し、図１、図２の半導体装置においては、熱衝撃サイクルによる樹脂基板１の湾曲が抑制されるので、図５、図６の半導体装置に断線の生じたサイクル数においてはワイヤ断線は生じなかった。   The inventor of the present application soldered the semiconductor device of FIGS. 5 and 6 onto a printed wiring board made of aluminum or the like, and conducted a thermal shock cycle test at −40 ° C. to + 125 ° C. As a result, in the semiconductor device of FIGS. 5 and 6, the wire breakage occurred in a predetermined cycle. That is, in the semiconductor devices of FIGS. 5 and 6, it is considered that the recrystallization portion is thinned due to the bending of the resin substrate 1 due to the thermal shock cycle. On the other hand, in the semiconductor device of FIGS. 1 and 2, since the bending of the resin substrate 1 due to the thermal shock cycle is suppressed, the wire breakage is not generated in the number of cycles in which the breakage of the semiconductor device of FIGS. Did not occur.

図１、図２において、樹脂基板１はたとえば厚さ0.1mmのＢＴレジン（登録商標）によって構成される。また、金属パターン１１〜１４、１５’、１６’はＣｕ/Ｎｉ/Ｐｄ/Ａｕ又はＮｉ/Ａｕの積層によって構成される。さらに、金属構造体１７’及び金属ビア１８はＣｕめっき層によって構成される。さらにまた、金属構造体１７’の断面積は、樹脂基板１の膨張収縮によるワイヤ４１、４２、４３の負荷を抑制するために、ＬＥＤ素子２の底面積の少なくとも１５％以上、好ましくは５０％以上であり、上述の実施の形態では、５０％〜８５％程度である。尚、金属構造体１７’は複数の矩形又は円形構造体で構成してもよい。   1 and 2, the resin substrate 1 is made of, for example, BT resin (registered trademark) having a thickness of 0.1 mm. Further, the metal patterns 11 to 14, 15 ', and 16' are formed of a Cu / Ni / Pd / Au or Ni / Au laminate. Further, the metal structure 17 ′ and the metal via 18 are constituted by a Cu plating layer. Furthermore, the cross-sectional area of the metal structure 17 ′ is at least 15% or more, preferably 50%, of the bottom area of the LED element 2 in order to suppress the load on the wires 41, 42 and 43 due to the expansion and contraction of the resin substrate 1. As described above, in the above-described embodiment, it is about 50% to 85%. The metal structure 17 'may be composed of a plurality of rectangular or circular structures.

図１、図２の半導体装置は、図２の（Ｂ）に対応する図３に示すごとく、ＬＥＤ素子２たとえば青色ＬＥＤ素子上にたとえば青色光の一部を黄色光に変換するＹＡＧ粒子を含む蛍光体層５を塗布し、さらに、ＬＥＤ素子２及び蛍光体層５の回りにＬＥＤ素子２及び蛍光体層５からの光を反射させる白色樹脂層６を形成することができる。   As shown in FIG. 3 corresponding to FIG. 2B, the semiconductor device of FIGS. 1 and 2 includes YAG particles that convert, for example, a part of blue light into yellow light on the LED element 2 such as a blue LED element. The phosphor layer 5 is applied, and a white resin layer 6 that reflects light from the LED element 2 and the phosphor layer 5 can be formed around the LED element 2 and the phosphor layer 5.

尚、上述の実施の形態の境界部Ｂ２が傾斜して構成された第１の実装端子用金属パターン１５’、第２の実装端子用金属パターン１６’は図４（Ａ）、（Ｂ）に示すごとく構成してもよい。すなわち、図４の（Ａ）においては、第１の実装端子用金属パターン１５’と第２の実装端子用金属パターン１６’との境界部Ｂ２を上面視で中央部分のみ金属パターン１５’、１６’の配置方向に対して傾斜させ、中央部分の両側は配置方向に対して垂直とする。また、図４の（Ｂ）においては、第１の実装端子用金属パターン１５’と第２の実装端子用金属パターン１６’との境界部Ｂ２の中央部分を金属パターン１５’、１６’の配置方向に対して平行にし、中央部分の両側は配置方向に対して垂直とする。いずれの場合も、第２の実装端子用金属パターン１６’をＬＥＤ素子搭載用金属パターン１１の一部に対向せしめていると共に、第１の実装端子用金属パターン１５’の放熱性をも確保する。   The first mounting terminal metal pattern 15 ′ and the second mounting terminal metal pattern 16 ′ formed by inclining the boundary B 2 of the above-described embodiment are shown in FIGS. 4A and 4B. You may comprise as shown. That is, in FIG. 4A, the metal patterns 15 ′, 16 only at the central portion of the boundary portion B2 between the first mounting terminal metal pattern 15 ′ and the second mounting terminal metal pattern 16 ′ as viewed from above. It is inclined with respect to the arrangement direction of ', and both sides of the central portion are perpendicular to the arrangement direction. In FIG. 4B, the central portion of the boundary portion B2 between the first mounting terminal metal pattern 15 ′ and the second mounting terminal metal pattern 16 ′ is arranged as the metal patterns 15 ′ and 16 ′. Parallel to the direction, both sides of the central portion are perpendicular to the arrangement direction. In either case, the second mounting terminal metal pattern 16 ′ is opposed to a part of the LED element mounting metal pattern 11, and the heat dissipation of the first mounting terminal metal pattern 15 ′ is also ensured. .

また、上述の実施の形態は、ＬＥＤ素子２及びＺＤ素子３の組合せの半導体装置を示しているが、本発明は、ＺＤ素子３の代わりに他のＬＥＤ素子を用いた複数のＬＥＤ素子の組合せの半導体装置にも適用できる。さらに、ＬＥＤ素子は他の半導体発光素子たとえばレーザダイオード（ＬＤ）素子又は他の半導体受光素子たとえばフォトダイオード（ＰＤ）素子でもよい。すなわち、本発明は、複数の半導体素子の組合せを用いた半導体装置に適用できる。   Moreover, although the above-mentioned embodiment has shown the semiconductor device of the combination of the LED element 2 and the ZD element 3, this invention is a combination of the several LED element using another LED element instead of the ZD element 3. The present invention can also be applied to other semiconductor devices. Further, the LED element may be another semiconductor light emitting element such as a laser diode (LD) element or another semiconductor light receiving element such as a photodiode (PD) element. That is, the present invention can be applied to a semiconductor device using a combination of a plurality of semiconductor elements.

さらに、本発明は上述の実施の形態の自明の範囲のいかなる変更にも適用し得る。   Furthermore, the present invention can be applied to any change in the obvious range of the above-described embodiment.

１：樹脂基板
１１：ＬＥＤ素子搭載用金属パターン（第１の半導体素子搭載用金属パターン）
１２：ＺＤ素子搭載用金属パターン（第２の半導体素子搭載用金属パターン）
１３：接続用金属パターン
１４：ワイヤボンディング用金属パターン
１５、１５’：第１の実装端子用金属パターン
１６、１６’：第２の実装端子用金属パターン
１７、１７’：金属構造体
１８：金属ビア
２：発光ダイオード（ＬＥＤ）素子（第１の半導体素子）
３：ツエナーダイオード（ＺＤ）素子（第２の半導体素子）
４１、４２、４３：ワイヤ
５：蛍光体層
６：白色樹脂層
Ｂ１、Ｂ２、Ｂ２’：境界部
1: Resin substrate 11: LED element mounting metal pattern (first semiconductor element mounting metal pattern)
12: ZD element mounting metal pattern (second semiconductor element mounting metal pattern)
13: Metal pattern for connection 14: Metal pattern for wire bonding 15, 15 ′: Metal pattern for first mounting terminal 16, 16 ′: Metal pattern for second mounting terminal 17, 17 ′: Metal structure 18: Metal Via 2: Light emitting diode (LED) element (first semiconductor element)
3: Zener diode (ZD) element (second semiconductor element)
41, 42, 43: Wire 5: Phosphor layer 6: White resin layers B1, B2, B2 ′: Boundary portion

Claims (6)

樹脂基板と、
第１、第２の半導体素子と、
前記樹脂基板の表面側に設けられた、前記第１の半導体素子を搭載する第１の素子搭載用金属パターン、前記第２の半導体素子を搭載する第２の素子搭載用金属パターン、第１の素子搭載用金属パターンと前記第２の素子搭載用金属パターンとを接続する接続用金属パターン、及び前記第１、第２の半導体素子にワイヤによって接続されたワイヤボンディング用金属パターンと、
前記樹脂基板の裏面側に設けられた、前記第１の素子搭載用金属パターンの一部に対向した第１の実装端子用金属パターン並びに前記第２の素子搭載用金属パターン、前記ワイヤボンディング用金属パターン及び前記第１の素子搭載用金属パターンの他の一部に対向した第２の実装端子用金属パターンと、
前記第１の素子搭載用金属パターンと前記第１の実装端子用金属パターンとを電気的に接続する金属構造体と、
前記ワイヤボンディング用金属パターンと前記第２の実装端子用金属パターンとを電気的に接続する配線と
を具備し、前記第１の素子搭載用金属パターンの前記他の一部は、前記第１の素子搭載用金属パターンの前記一部と比較して前記ワイヤボンディング用金属パターンに近接している半導体装置。 A resin substrate;
First and second semiconductor elements;
A first element mounting metal pattern for mounting the first semiconductor element, a second element mounting metal pattern for mounting the second semiconductor element, provided on the surface side of the resin substrate, A metal pattern for connection for connecting an element mounting metal pattern and the second element mounting metal pattern, and a wire bonding metal pattern connected to the first and second semiconductor elements by wires;
A first mounting terminal metal pattern, a second element mounting metal pattern, and a wire bonding metal, which are provided on the back side of the resin substrate and face a part of the first element mounting metal pattern. A second metal pattern for mounting terminals opposed to the pattern and the other part of the first element mounting metal pattern;
A metal structure for electrically connecting the first element mounting metal pattern and the first mounting terminal metal pattern;
Wiring for electrically connecting the metal pattern for wire bonding and the second metal pattern for mounting terminals, and the other part of the first element mounting metal pattern is formed of the first element mounting metal pattern. A semiconductor device that is closer to the wire bonding metal pattern than the part of the element mounting metal pattern. 前記第１の実装端子用金属パターンと前記第２の実装端子用金属パターンとの境界部は上面視で前記第１、第２の実装端子用金属パターンの配置方向に対して傾斜している請求項１に記載の半導体装置。   The boundary between the first mounting terminal metal pattern and the second mounting terminal metal pattern is inclined with respect to the arrangement direction of the first and second mounting terminal metal patterns in a top view. Item 14. The semiconductor device according to Item 1. 前記第１の実装端子用金属パターンと前記第２の実装端子用金属パターンとの境界部の中央部分は上面視で前記第１、第２の実装端子用金属パターンの配置方向に対して傾斜し、前記境界部の前記中央部分の両側は前記配置方向に対して垂直である請求項１に記載の半導体装置。   A central portion of the boundary between the first mounting terminal metal pattern and the second mounting terminal metal pattern is inclined with respect to the arrangement direction of the first and second mounting terminal metal patterns in a top view. 2. The semiconductor device according to claim 1, wherein both sides of the central portion of the boundary portion are perpendicular to the arrangement direction. 前記第１の実装端子用金属パターンと前記第２の実装端子用金属パターンとの境界部の中央部分は前記第１、第２の実装端子用金属パターンの配置方向に対して平行であり、前記境界部の前記中央部分の両側は前記配置方向に対して垂直である請求項１に記載の半導体装置。   A central portion of a boundary portion between the first mounting terminal metal pattern and the second mounting terminal metal pattern is parallel to the arrangement direction of the first and second mounting terminal metal patterns, The semiconductor device according to claim 1, wherein both sides of the central portion of the boundary portion are perpendicular to the arrangement direction. 前記第１の半導体素子は半導体発光素子又は半導体受光素子であり、
前記第２の半導体素子は逆電圧保護素子である請求項１ないし請求項４のいずれかに記載の半導体装置。 The first semiconductor element is a semiconductor light emitting element or a semiconductor light receiving element;
The semiconductor device according to claim 1, wherein the second semiconductor element is a reverse voltage protection element. 前記ワイヤボンディング用金属パターンと前記ワイヤとの接続部には、ボール部が形成されている請求項１ないし請求項５のいずれかに記載の半導体装置。
The semiconductor device according to claim 1, wherein a ball portion is formed at a connection portion between the wire bonding metal pattern and the wire.
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