JP2017073561A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
JP2017073561A
JP2017073561A JP2016240084A JP2016240084A JP2017073561A JP 2017073561 A JP2017073561 A JP 2017073561A JP 2016240084 A JP2016240084 A JP 2016240084A JP 2016240084 A JP2016240084 A JP 2016240084A JP 2017073561 A JP2017073561 A JP 2017073561A
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lead frame
emitting device
semiconductor light
case
light emitting
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JP6307584B2 (en
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小早川　正彦
Masahiko Kobayakawa
正彦 小早川
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Rohm Co Ltd
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Rohm Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device capable of achieving down sizing properly.SOLUTION: A semiconductor light emitting device A comprises a lead frame 1, an LED chip 2, a case 3 and a translucent resin. The lead frame 1 is divided into two parts and has a rear face exposed from the case 3; a comparatively longitudinal part (first lead frame) has a bonding part 11, a plurality of thin extension parts 12 and a plurality of thick extension parts 13; and a comparatively shorter part (second lea frame) is connected by a wire 5. The plurality of thin extension parts 12 and the plurality of thick extension parts 13 are alternatively arranged in a longer direction of the lead frame 1; and the case 3 has a relationship with the plurality of thin extension parts 12 and the plurality of thick extension parts 13 to be fitted, and the case 3 has a shape to wrap the thin extension parts 12.SELECTED DRAWING: Figure 1

Description

本発明は、半導体素子を備える半導体発光装置に関する。   The present invention relates to a semiconductor light emitting device including a semiconductor element.

図６および図７は、従来の半導体発光装置の一例を示している（たとえば特許文献１参照）。これらの図に示された半導体発光装置Ｘは、リードフレーム９１、ＬＥＤチップ９２、ケース９３、および透光樹脂９４を備えている。リードフレーム９１は、略一定の幅とされた２つの帯状部分からなる。リードフレーム９１の裏面は、ケース９３から露出している。ＬＥＤチップ９２は、半導体発光装置Ｘの光源であり、リードフレーム９１の一方の帯状部分に含まれるボンディング部９１ａにボンディングされている。ＬＥＤチップ９２は、リードフレーム９１の他方の帯状部分に対して、ワイヤ９５によって接続されている。   6 and 7 show an example of a conventional semiconductor light emitting device (see, for example, Patent Document 1). The semiconductor light emitting device X shown in these drawings includes a lead frame 91, an LED chip 92, a case 93, and a translucent resin 94. The lead frame 91 is composed of two belt-like portions having a substantially constant width. The back surface of the lead frame 91 is exposed from the case 93. The LED chip 92 is a light source of the semiconductor light emitting device X, and is bonded to a bonding portion 91 a included in one strip portion of the lead frame 91. The LED chip 92 is connected to the other strip portion of the lead frame 91 by a wire 95.

半導体発光装置Ｘの高輝度化を図るには、ＬＥＤチップ９２への投入電力を大きくする必要がある。これに伴い、ＬＥＤチップ９２から発せられる熱量が増大する。この熱は、ボンディング部９１ａを介して、半導体発光装置Ｘが実装されるたとえば回路基板に逃がすことが好ましい。しかしながら、全体が比較的小型である長矩形状とされた半導体発光装置Ｘにおいて、ケース９３に対するボンディング部９１ａの大きさを大きくすると、リードフレーム９１がケース９３から抜け落ちてしまうという問題があった。   In order to increase the brightness of the semiconductor light emitting device X, it is necessary to increase the input power to the LED chip 92. Along with this, the amount of heat generated from the LED chip 92 increases. This heat is preferably released to, for example, a circuit board on which the semiconductor light emitting device X is mounted via the bonding portion 91a. However, in the semiconductor light emitting device X having a long rectangular shape which is relatively small as a whole, there is a problem that when the size of the bonding portion 91a with respect to the case 93 is increased, the lead frame 91 falls out of the case 93.

特開２００５−３５３９１４号公報JP 2005-353914 A

本発明は、上記した事情のもとで考え出されたものであって、適正に小型化を図ることが可能な半導体発光装置を提供することをその課題とする。   The present invention has been conceived under the circumstances described above, and an object of the present invention is to provide a semiconductor light emitting device that can be appropriately downsized.

本発明によって提供される半導体発光装置は、ボンディング部を有する第１厚肉部と、上記第１厚肉部よりも厚みの小さい第１薄肉延出部とを有する第１リードフレームと、上記第１リードフレームと第１方向において離間配置され、第２厚肉部と、上記第２厚肉部よりも厚みの小さい第２薄肉延出部とを有する第２リードフレームと、上記第１リードフレームのダイボンディング部にボンディングされ、且つ上記第２リードフレームに導通する半導体発光素子と、上記第１リードフレームおよび上記第２リードフレームを支持する樹脂製のケースと、を備え、上記ダイボンディング部、上記第１薄肉延出部、上記第２厚肉部および上記第２薄肉延出部はその上面が同一平面であり、上記ケースは、上記第１厚肉部および上記第２厚肉部の裏面を露出させつつ上記第１薄肉延出部および上記第２薄肉延出部の裏面を密着して覆う抱え込み部を有しているとともに、上記第２薄肉延出部は、上記第１方向における上記第１リードフレーム側と、上記第１方向と直角である第２方向における両側と、の三方において上記第２厚肉部を囲むように連続的に形成されている。   A semiconductor light emitting device provided by the present invention includes a first lead frame having a first thick portion having a bonding portion, a first thin extension portion having a thickness smaller than the first thick portion, and the first lead frame. A second lead frame spaced apart from one lead frame in the first direction and having a second thick part and a second thin extension part having a thickness smaller than that of the second thick part; and the first lead frame A semiconductor light emitting device bonded to the die bonding portion and conducting to the second lead frame, and a resin case supporting the first lead frame and the second lead frame, the die bonding portion, The first thin wall extension portion, the second thick wall portion, and the second thin wall extension portion have the same upper surface, and the case is behind the first thick wall portion and the second thick wall portion. And having a holding portion that closely covers and covers the back surfaces of the first thin extension portion and the second thin extension portion, and the second thin extension portion is the first thin extension portion in the first direction. The first lead frame side and the two sides in the second direction perpendicular to the first direction are continuously formed so as to surround the second thick portion.

本発明の好ましい実施の形態においては、上記第１リードフレームは、上記薄肉延出部を含むものであって上記第２方向に延出する第１延出部を含み、上記第１延出部の先端と、上記第２薄肉延出部のうち上記第２方向に延出する部分の先端とは、上記第２方向において同一の位置である。   In a preferred embodiment of the present invention, the first lead frame includes the thin extension part, includes a first extension part extending in the second direction, and the first extension part. And the tip of the portion extending in the second direction of the second thin extending portion is at the same position in the second direction.

本発明の好ましい実施の形態においては、上記第１延出部および上記第２薄肉延出部の先端は、平面視において、上記ケースの側面よりも内側に位置することにより上記ケースに内包されている。   In preferable embodiment of this invention, the front-end | tip of the said 1st extension part and the said 2nd thin extension part is enclosed by the said case by being located inside the side surface of the said case in planar view. Yes.

本発明の好ましい実施の形態においては、上記第１延出部は、上記ダイボンディング部の上記第２方向両側に、それぞれ少なくとも１つずつ形成されている。   In a preferred embodiment of the present invention, at least one first extending portion is formed on each side of the die bonding portion in the second direction.

本発明の好ましい実施の形態においては、上記第１延出部は、上記ダイボンディング部の上記第２方向片側に、複数形成されているものを含む。   In preferable embodiment of this invention, the said 1st extension part contains what is formed in multiple numbers by the said 2nd direction one side of the said die bonding part.

本発明の好ましい実施の形態においては、上記第１厚肉部の上記ケースからの露出面積は、上記第２厚肉部の上記ケースからの露出面積よりも大きい。   In a preferred embodiment of the present invention, the exposed area of the first thick part from the case is larger than the exposed area of the second thick part from the case.

本発明の好ましい実施の形態においては、上記ダイボンディング部の上記裏面は、上記ケースの裏面と面一である。   In a preferred embodiment of the present invention, the back surface of the die bonding portion is flush with the back surface of the case.

本発明の好ましい実施の形態においては、上記ケースは白色樹脂からなる。   In a preferred embodiment of the present invention, the case is made of a white resin.

本発明のその他の特徴および利点は、添付図面を参照して以下に行う詳細な説明によって、より明らかとなろう。   Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

本発明に係る半導体発光装置の一例を示す要部平面図である。It is a principal part top view which shows an example of the semiconductor light-emitting device concerning this invention. 本発明に係る半導体発光装置の一例を示す底面図である。It is a bottom view which shows an example of the semiconductor light-emitting device concerning this invention. 図１のＩＩＩ−ＩＩＩ線に沿う断面図である。It is sectional drawing which follows the III-III line of FIG. 図１のＩＶ−ＩＶ線に沿う断面図である。It is sectional drawing which follows the IV-IV line of FIG. 図１のＶ−Ｖ線に沿う断面図である。It is sectional drawing which follows the VV line of FIG. 従来の半導体発光装置の一例を示す断面図である。It is sectional drawing which shows an example of the conventional semiconductor light-emitting device. 図６のＶＩＩ−ＶＩＩ線に沿う断面図である。It is sectional drawing which follows the VII-VII line of FIG.

以下、本発明の好ましい実施の形態につき、図面を参照して具体的に説明する。   Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.

図１〜図５は、本発明に係る半導体発光装置の一例を示している。本実施形態の半導体発光装置Ａは、リードフレーム１、ＬＥＤチップ２、ケース３、および透光樹脂４を備えている。半導体発光装置Ａは、長さが４ｍｍ程度、幅が１ｍｍ程度、高さが０．６ｍｍ程度の、ごく小型の長矩形状とされている。なお、図１においては、理解の便宜上、透光樹脂４を省略している。   1 to 5 show an example of a semiconductor light emitting device according to the present invention. The semiconductor light emitting device A according to this embodiment includes a lead frame 1, an LED chip 2, a case 3, and a translucent resin 4. The semiconductor light emitting device A has a very small long rectangular shape with a length of about 4 mm, a width of about 1 mm, and a height of about 0.6 mm. In FIG. 1, the translucent resin 4 is omitted for convenience of understanding.

リードフレーム１は、たとえばＣｕ、Ｎｉ、またはこれらの合金からなり、２つの部分に分割されている。図２に示すように、リードフレーム１は、裏面がケース３から露出している。このうち、比較的長手状とされた部分（第１リードフレーム）は、ボンディング部１１、複数の薄肉延出部１２、および複数の厚肉延出部１３を有している。   The lead frame 1 is made of, for example, Cu, Ni, or an alloy thereof and is divided into two parts. As shown in FIG. 2, the back surface of the lead frame 1 is exposed from the case 3. Among these, a relatively long portion (first lead frame) has a bonding portion 11, a plurality of thin extension portions 12, and a plurality of thick extension portions 13.

ボンディング部１１は、帯状とされており、表面にＬＥＤチップ２がボンディングされる部分である。薄肉延出部１２は、ボンディング部１１から延びており、本実施形態においては、その厚さがボンディング部１１の半分程度の厚さとされている。図４に示すように、薄肉延出部１２の表面は、ボンディング部１１の表面と面一とされている。薄肉延出部１２の裏面は、ボンディング部１１の裏面よりもケース３の内方に位置しており、ケース３によって覆われている。図５に示すように、厚肉延出部１３は、ボンディング部１１から延びており、その厚さがボンディング部１１と同じとされている。厚肉延出部１３の表面は、ボンディング部１１の表面と面一であり、厚肉延出部１３の裏面は、ケース３から露出している。本実施形態においては、複数の薄肉延出部１２と複数の厚肉延出部１３とがリードフレーム１の長手方向において交互に配置されている。   The bonding part 11 has a band shape and is a part where the LED chip 2 is bonded to the surface. The thin extension part 12 extends from the bonding part 11. In this embodiment, the thickness of the thin extension part 12 is about half that of the bonding part 11. As shown in FIG. 4, the surface of the thin extension portion 12 is flush with the surface of the bonding portion 11. The back surface of the thin extension portion 12 is located inside the case 3 with respect to the back surface of the bonding portion 11 and is covered with the case 3. As shown in FIG. 5, the thick extension portion 13 extends from the bonding portion 11, and the thickness thereof is the same as that of the bonding portion 11. The surface of the thick extension portion 13 is flush with the surface of the bonding portion 11, and the back surface of the thick extension portion 13 is exposed from the case 3. In the present embodiment, the plurality of thin extension portions 12 and the plurality of thick extension portions 13 are alternately arranged in the longitudinal direction of the lead frame 1.

ＬＥＤチップ２は、半導体発光装置Ａの光源であり、所定の波長の光を発する半導体発光素子である。ＬＥＤチップ２は、たとえばＧａＮなどの半導体材料からなり、ｎ型半導体層とｐ型半導体層とに挟まれた活性層において電子と正孔とが再結合することにより青色光、緑色光、赤色光などを発する。ＬＥＤチップ２は、リードフレーム１のうち比較的短尺である部分（第２リードフレーム）に対して、ワイヤ５によって接続されている。   The LED chip 2 is a light source of the semiconductor light emitting device A and is a semiconductor light emitting element that emits light of a predetermined wavelength. The LED chip 2 is made of a semiconductor material such as GaN, for example, and recombines electrons and holes in an active layer sandwiched between an n-type semiconductor layer and a p-type semiconductor layer, thereby causing blue light, green light, red light. Etc. The LED chip 2 is connected to a relatively short portion (second lead frame) of the lead frame 1 by a wire 5.

ケース３は、たとえば白色樹脂製であり、全体が長矩形枠状とされている。図３〜図５に示すように、ケース３の内面は、テーパ状のリフレクタ３ａとされている。リフレクタ３ａは、ＬＥＤチップ２から側方に発せられた光を上方に向けて反射するためのものである。図４に示すように、ケース３は、薄肉延出部１２を抱え込む格好となっている。また、図２に示すように、ケース３と複数の薄肉延出部１２および複数の厚肉延出部１３とは、互いに入り込みあう関係となっている。   The case 3 is made of white resin, for example, and has a long rectangular frame shape as a whole. As shown in FIGS. 3 to 5, the inner surface of the case 3 is a tapered reflector 3 a. The reflector 3a is for reflecting upward the light emitted from the LED chip 2 to the side. As shown in FIG. 4, the case 3 is dressed so as to hold the thin extension portion 12. Further, as shown in FIG. 2, the case 3, the plurality of thin extension portions 12, and the plurality of thick extension portions 13 have a relationship of entering each other.

透光樹脂４は、たとえば透明なエポキシ樹脂製であり、ケース３によって囲われた空間に充填されている。透光樹脂４は、ＬＥＤチップ２を覆っており、ＬＥＤチップ２を保護しつつ、ＬＥＤチップ２からの光を透過させる。   The translucent resin 4 is made of, for example, a transparent epoxy resin, and is filled in a space surrounded by the case 3. The translucent resin 4 covers the LED chip 2 and transmits light from the LED chip 2 while protecting the LED chip 2.

次に、半導体発光装置Ａの作用について説明する。   Next, the operation of the semiconductor light emitting device A will be described.

本実施形態によれば、薄肉延出部１２をケース３が抱え込む格好となっている。これにより、ケース３によるリードフレーム１の保持力を高めることが可能である。これにより、リードフレーム１がケース３から抜け出ることを防止することができる。この結果、半導体発光装置Ａは、図２に示すように、幅が１ｍｍ程度のごく狭幅であるにも関わらず、リードフレーム１のうちケース３から露出する部分の面積を大きくすることができる。したがって、ＬＥＤチップ２からの熱を適切に逃がすことが可能であり、半導体発光装置Ａの小型化と高輝度化とを図ることができる。 According to the present embodiment, the case 3 is configured to hold the thin extension portion 12. Thereby, the holding force of the lead frame 1 by the case 3 can be increased. Thereby, it is possible to prevent the lead frame 1 from coming out of the case 3. As a result, as shown in FIG. 2, the semiconductor light emitting device A can increase the area of the lead frame 1 exposed from the case 3 in spite of the very narrow width of about 1 mm. . Therefore, heat from the LED chip 2 can be appropriately released, and the semiconductor light emitting device A can be reduced in size and brightness.

薄肉延出部１２と厚肉延出部１３とを交互に配置することにより、薄肉延出部１２をケース３に抱え込ませつつ、ケース３から露出した厚肉延出部１３の分だけ、リードフレーム１の露出面積を拡大することが可能である。これは、半導体発光装置Ａの小型化と高輝度化とを図るのに好適である。   By alternately arranging the thin extension portions 12 and the thick extension portions 13, the thin extension portions 12 are held in the case 3, and only the thick extension portions 13 exposed from the case 3 lead. It is possible to enlarge the exposed area of the frame 1. This is suitable for reducing the size and the brightness of the semiconductor light emitting device A.

本発明に係る半導体発光装置は、上述した実施形態に限定されるものではない。本発明に係る半導体発光装置の各部の具体的な構成は、種々に設計変更自在である。   The semiconductor light emitting device according to the present invention is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor light emitting device according to the present invention can be varied in design in various ways.

Ａ 半導体発光装置
１ リードフレーム
２ ＬＥＤチップ（半導体発光素子）
３ ケース
４ 透光樹脂
５ ワイヤ
１１ ボンディング部
１２ 薄肉延出部
１３ 厚肉延出部 A Semiconductor light emitting device 1 Lead frame 2 LED chip (semiconductor light emitting element)
3 Case 4 Translucent resin 5 Wire 11 Bonding part 12 Thin extension part 13 Thick extension part

Claims (8)

ボンディング部を有する第１厚肉部と、上記第１厚肉部よりも厚みの小さい第１薄肉延出部とを有する第１リードフレームと、
上記第１リードフレームと第１方向において離間配置され、第２厚肉部と、上記第２厚肉部よりも厚みの小さい第２薄肉延出部とを有する第２リードフレームと、
上記第１リードフレームのダイボンディング部にボンディングされ、且つ上記第２リードフレームに導通する半導体発光素子と、
上記第１リードフレームおよび上記第２リードフレームを支持する樹脂製のケースと、
を備え、
上記ダイボンディング部、上記第１薄肉延出部、上記第２厚肉部および上記第２薄肉延出部はその上面が同一平面であり、
上記ケースは、上記第１厚肉部および上記第２厚肉部の裏面を露出させつつ上記第１薄肉延出部および上記第２薄肉延出部の裏面を密着して覆う抱え込み部を有しているとともに、
上記第２薄肉延出部は、上記第１方向における上記第１リードフレーム側と、上記第１方向と直角である第２方向における両側と、の三方において上記第２厚肉部を囲むように連続的に形成されている、半導体発光装置。 A first lead frame having a first thick portion having a bonding portion and a first thin extension portion having a thickness smaller than that of the first thick portion;
A second lead frame spaced apart from the first lead frame in the first direction and having a second thick part and a second thin extension part having a smaller thickness than the second thick part;
A semiconductor light emitting device bonded to the die bonding portion of the first lead frame and conducting to the second lead frame;
A resin case supporting the first lead frame and the second lead frame;
With
The upper surface of the die bonding part, the first thin extension part, the second thick part, and the second thin extension part is the same plane,
The case has a holding portion that covers the back surfaces of the first thin wall extension portion and the second thin wall extension portion while closely exposing the back surfaces of the first thick wall portion and the second thick wall portion. And
The second thin extension portion surrounds the second thick portion in three directions, that is, the first lead frame side in the first direction and both sides in the second direction perpendicular to the first direction. A semiconductor light emitting device formed continuously. 上記第１リードフレームは、上記薄肉延出部を含むものであって上記第２方向に延出する第１延出部を含み、
上記第１延出部の先端と、上記第２薄肉延出部のうち上記第２方向に延出する部分の先端とは、上記第２方向において同一の位置である、請求項１に記載の半導体発光装置。 The first lead frame includes the thin extension and includes a first extension extending in the second direction,
The tip of the first extension part and the tip of a part of the second thin extension part that extends in the second direction are at the same position in the second direction. Semiconductor light emitting device. 上記第１延出部および上記第２薄肉延出部の先端は、平面視において、上記ケースの側面よりも内側に位置することにより上記ケースに内包されている、請求項２に記載の半導体発光装置。   3. The semiconductor light emitting device according to claim 2, wherein tips of the first extension part and the second thin extension part are included in the case by being located on an inner side than a side surface of the case in a plan view. apparatus. 上記第１延出部は、上記ダイボンディング部の上記第２方向両側に、それぞれ少なくとも１つずつ形成されている、請求項１ないし３のいずれかに記載の半導体発光装置。   4. The semiconductor light emitting device according to claim 1, wherein at least one first extending portion is formed on each side of the die bonding portion in the second direction. 5. 上記第１延出部は、上記ダイボンディング部の上記第２方向片側に、複数形成されているものを含む、請求項４に記載の半導体発光装置。   The semiconductor light emitting device according to claim 4, wherein a plurality of the first extending portions are formed on one side in the second direction of the die bonding portion. 上記第１厚肉部の上記ケースからの露出面積は、上記第２厚肉部の上記ケースからの露出面積よりも大きい、請求項１ないし５のいずれかに記載の半導体発光装置。   6. The semiconductor light emitting device according to claim 1, wherein an exposed area of the first thick portion from the case is larger than an exposed area of the second thick portion from the case. 上記ダイボンディング部の上記裏面は、上記ケースの裏面と面一である、請求項１ないし６のいずれかに記載の半導体発光装置。   The semiconductor light emitting device according to claim 1, wherein the back surface of the die bonding portion is flush with the back surface of the case. 上記ケースは白色樹脂からなる、請求項１ないし７のいずれかに記載の半導体発光装置。   The semiconductor light-emitting device according to claim 1, wherein the case is made of a white resin.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004022862A (en) * 2002-06-18 2004-01-22 Rohm Co Ltd Semiconductor device
JP2004274027A (en) * 2003-02-18 2004-09-30 Sharp Corp Semiconductor light emitting device, its manufacturing method, and electronic imaging apparatus
US20050151149A1 (en) * 2004-01-08 2005-07-14 Chia Chee W. Light emission device
JP2006156704A (en) * 2004-11-30 2006-06-15 Nichia Chem Ind Ltd Resin molding and surface-mounted light emitting device, and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004022862A (en) * 2002-06-18 2004-01-22 Rohm Co Ltd Semiconductor device
JP2004274027A (en) * 2003-02-18 2004-09-30 Sharp Corp Semiconductor light emitting device, its manufacturing method, and electronic imaging apparatus
US20050151149A1 (en) * 2004-01-08 2005-07-14 Chia Chee W. Light emission device
JP2006156704A (en) * 2004-11-30 2006-06-15 Nichia Chem Ind Ltd Resin molding and surface-mounted light emitting device, and manufacturing method thereof

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