JP2017044711A - 表面増強ラマン散乱ユニット - Google Patents
表面増強ラマン散乱ユニット Download PDFInfo
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- JP2017044711A JP2017044711A JP2016237577A JP2016237577A JP2017044711A JP 2017044711 A JP2017044711 A JP 2017044711A JP 2016237577 A JP2016237577 A JP 2016237577A JP 2016237577 A JP2016237577 A JP 2016237577A JP 2017044711 A JP2017044711 A JP 2017044711A
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- substrate
- fine structure
- raman scattering
- enhanced raman
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- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 title claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000000465 moulding Methods 0.000 claims description 56
- 238000001069 Raman spectroscopy Methods 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 14
- 239000013013 elastic material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 23
- 239000011347 resin Substances 0.000 description 17
- 229920005989 resin Polymers 0.000 description 17
- 239000000463 material Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000006059 cover glass Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000007493 shaping process Methods 0.000 description 6
- 238000004611 spectroscopical analysis Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
Description
Claims (8)
- 主面を有する基板と、
前記基板の前記主面に沿って延在するように前記主面上に形成された支持部、及び、前記支持部上に形成された微細構造部を含む成形層と、
前記基板の前記主面に沿って前記支持部及び前記微細構造部を囲むように前記主面上に形成された環状の枠部と、
少なくとも前記微細構造部上に形成され、表面増強ラマン散乱を生じさせる光学機能部を構成する導電体層と、を備え、
前記微細構造部は、二次元状に配列された複数のピラーを含み、前記支持部と一体に形成されており、
前記成形層は、前記基板との間に熱膨張係数差を有する、
ことを特徴とする表面増強ラマン散乱ユニット。 - 前記枠部は、前記成形層として前記支持部と一体に形成されていることを特徴とする請求項1に記載の表面増強ラマン散乱ユニット。
- 前記基板の前記主面からの前記枠部の高さは、前記基板の前記主面からの前記微細構造部の高さよりも高いことを特徴とする請求項1又は2に記載の表面増強ラマン散乱ユニット。
- 前記基板の前記主面からの前記枠部の高さは、前記基板の前記主面からの前記微細構造部の高さと同一であることを特徴とする請求項1又は2に記載の表面増強ラマン散乱ユニット。
- 前記枠部は、弾性材料からなることを特徴とする請求項1〜4のいずれか一項に記載の表面増強ラマン散乱ユニット。
- 前記微細構造部は、前記支持部上に突設された複数のピラーを含み、
前記複数のピラーは、前記支持部と一体に形成されて互いに接続されていることを特徴とする請求項1〜5のいずれか一項に記載の表面増強ラマン散乱ユニット。 - 前記基板の前記主面に沿った方向について、前記枠部の幅は、前記ピラーの太さよりも大きいことを特徴とする請求項6に記載の表面増強ラマン散乱ユニット。
- 前記支持部及び前記微細構造部は、矩形状の領域に形成されており、
前記枠部は、矩形環状である、
請求項1〜7のいずれか一項に記載の表面増強ラマン散乱ユニット。
Priority Applications (1)
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JP2016237577A JP6284610B2 (ja) | 2016-12-07 | 2016-12-07 | 表面増強ラマン散乱ユニット |
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JP2016237577A JP6284610B2 (ja) | 2016-12-07 | 2016-12-07 | 表面増強ラマン散乱ユニット |
Related Parent Applications (1)
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JP2012178771A Division JP6058313B2 (ja) | 2012-08-10 | 2012-08-10 | 表面増強ラマン散乱ユニット |
Publications (2)
Publication Number | Publication Date |
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JP2017044711A true JP2017044711A (ja) | 2017-03-02 |
JP6284610B2 JP6284610B2 (ja) | 2018-02-28 |
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JP2016237577A Active JP6284610B2 (ja) | 2016-12-07 | 2016-12-07 | 表面増強ラマン散乱ユニット |
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JP (1) | JP6284610B2 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56142454U (ja) * | 1980-03-28 | 1981-10-27 | ||
JP2003240705A (ja) * | 2001-12-14 | 2003-08-27 | Fuji Photo Film Co Ltd | 測定チップ |
JP2005337771A (ja) * | 2004-05-25 | 2005-12-08 | National Institute For Materials Science | ナノ構造を有する集積化ピラー構造光学素子 |
US20110166045A1 (en) * | 2009-12-01 | 2011-07-07 | Anuj Dhawan | Wafer scale plasmonics-active metallic nanostructures and methods of fabricating same |
US20110267607A1 (en) * | 2010-04-30 | 2011-11-03 | Min Hu | Enhancing signals in surface enhanced raman spectroscopy (sers) |
US20110267608A1 (en) * | 2010-04-30 | 2011-11-03 | Fung Suong Ou | Tunable apparatus for performing sers |
-
2016
- 2016-12-07 JP JP2016237577A patent/JP6284610B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56142454U (ja) * | 1980-03-28 | 1981-10-27 | ||
JP2003240705A (ja) * | 2001-12-14 | 2003-08-27 | Fuji Photo Film Co Ltd | 測定チップ |
JP2005337771A (ja) * | 2004-05-25 | 2005-12-08 | National Institute For Materials Science | ナノ構造を有する集積化ピラー構造光学素子 |
US20110166045A1 (en) * | 2009-12-01 | 2011-07-07 | Anuj Dhawan | Wafer scale plasmonics-active metallic nanostructures and methods of fabricating same |
US20110267607A1 (en) * | 2010-04-30 | 2011-11-03 | Min Hu | Enhancing signals in surface enhanced raman spectroscopy (sers) |
US20110267608A1 (en) * | 2010-04-30 | 2011-11-03 | Fung Suong Ou | Tunable apparatus for performing sers |
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JP6284610B2 (ja) | 2018-02-28 |
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