JP2017036493A - 原子層堆積中における化学物質の制御された分離および送出により低欠陥処理を可能にするシステムおよび方法 - Google Patents
原子層堆積中における化学物質の制御された分離および送出により低欠陥処理を可能にするシステムおよび方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000012384 transportation and delivery Methods 0.000 title claims abstract description 41
- 238000000231 atomic layer deposition Methods 0.000 title claims description 34
- 238000000926 separation method Methods 0.000 title description 27
- 230000007547 defect Effects 0.000 title description 8
- 239000000126 substance Substances 0.000 title 1
- 238000009826 distribution Methods 0.000 claims abstract description 8
- 238000012545 processing Methods 0.000 claims description 63
- 238000010926 purge Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 45
- 239000002243 precursor Substances 0.000 claims description 35
- 239000012530 fluid Substances 0.000 claims description 30
- 238000004891 communication Methods 0.000 claims description 27
- 238000004140 cleaning Methods 0.000 claims description 22
- 230000001590 oxidative effect Effects 0.000 claims description 22
- 239000007789 gas Substances 0.000 abstract description 279
- 230000001052 transient effect Effects 0.000 abstract 2
- 239000012495 reaction gas Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 6
- 239000000376 reactant Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000002123 temporal effect Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Abstract
Description
本出願は、2015年7月15日に出願された、米国特許仮出願第62/192,844号の利益を主張する。上述の出願の開示全体は参照により本明細書に組み込まれる。
Claims (26)
- 基板処理システムのためのガス送出システムであって、
入口および出口を含み、前記入口は第1のガス源と流体連通する、第1のバルブと、
第1の入口、第2の入口、および出口を含み、前記第1の入口は前記第1のバルブの前記出口と流体連通し、前記第2の入口は第2のガス源と流体連通する、第2のバルブと、
入口および出口を含み、前記入口は第3のガス源と流体連通する、第3のバルブと、
コネクタであって、
第1のガスチャネルと、
第1の端部および第2の端部を有する第2のガスチャネルを規定するシリンダと、
前記シリンダは、前記シリンダおよび前記第1のガスチャネルが共同で前記シリンダの外側表面と前記第1のガスチャネルの内側表面との間に流路を規定するように、前記第1のガスチャネル内部に少なくとも部分的に配置され、
前記流路は、前記第3のバルブの前記出口および前記第2のガスチャネルの前記第1の端部と流体連通し、
前記第2のガスチャネルの前記第2の端部と、前記第2のバルブの前記出口と、および処理チャンバのガス分配装置と流体連通する第3のガスチャネルと、を備えるコネクタと、
を備える、ガス送出システム。 - 請求項1に記載のガス送出システムであって、前記第1のガス源は、パージ・ガス源を含む、ガス送出システム。
- 請求項1に記載のガス送出システムであって、前記第2のガス源は、前駆体ガス源を含む、ガス送出システム。
- 請求項1に記載のガス送出システムであって、入口および出口を含む第4のバルブをさらに備え、前記入口は第4のガス源と流体連通し、前記出口は前記流路と流体連通する、ガス送出システム。
- 請求項4に記載のガス送出システムであって、前記第4のガス源は、洗浄ガス源を含む、ガス送出システム。
- 請求項5に記載のガス送出システムであって、前記洗浄ガス源は、遠隔プラズマ洗浄(RPC)ガスを含む、ガス送出システム。
- 請求項1に記載のガス送出システムであって、前記第3のガス源は、酸化ガス源を含む、ガス送出システム。
- 請求項1に記載のガス送出システムであって、前記基板処理システムは、原子層堆積を実行する、ガス送出システム。
- 請求項1に記載のガス送出システムであって、さらに、前記第1のバルブ、前記第2のバルブ、および前記第3のバルブを制御するように構成されているコントローラを備える、ガス送出システム。
- 請求項9に記載のガス送出システムであって、前記コントローラは、
前記第1のバルブおよび前記第2のバルブを使用して、第1の所定期間中、前記第2のガス源から前駆体ガスを供給し、
前記第1のバルブおよび前記第2のバルブを使用して、第2の所定期間中、前記第1のガス源からパージ・ガスを供給し、
前記第3のバルブを使用して、第3の所定期間中、前記第3のガス源から酸化ガスを供給するように構成されている、ガス送出システム。 - 請求項10に記載のガス送出システムであって、
前記第1の所定期間は原子層堆積(ALD)プロセスのドーズ段に相当し、
前記第2の所定期間は前記ALDプロセスのバースト・パージ段に相当し、
前記第3の所定期間は前記ALDプロセスのドーズ・パージ段、RF段、およびRFパージ段に相当する、ガス送出システム。 - 請求項4に記載のガス送出システムであって、前記第4のバルブと前記コネクタ間の距離は10インチ〜40インチである、ガス送出システム。
- 請求項4に記載のガス送出システムであって、前記第4のバルブと前記コネクタ間の距離は5インチ未満である、ガス送出システム。
- 基板処理システムにガスを供給するための方法であって、
第1のバルブを使用して、第1のガス源からガスを選択的に供給し、
第2のバルブを使用して、前記第1のガス源または第2のガス源からガスを選択的に供給し、
第3のバルブを使用して、第3のガス源からガスを選択的に供給し、
第1のガスチャネルと、
第1の端部および第2の端部を有する第2のガスチャネルを規定するシリンダと、
前記シリンダおよび前記第1のガスチャネルは共同で前記シリンダの外側表面と前記第1のガスチャネルの内側表面との間に流路を規定するように、前記第1のガスチャネル内部に少なくとも部分的に配置され、
前記流路は前記第3のバルブの出口および前記第2のガスチャネルの前記第1の端部と流体連通し、
前記第2のガスチャネルの前記第2の端部、前記第2のバルブの出口、および処理チャンバのガス分配装置と流体連通する第3のガスチャネル、
を含むコネクタを提供すること、
を備える、方法。 - 請求項14に記載の方法であって、前記第1のガス源はパージ・ガス源を含む、方法。
- 請求項14に記載の方法であって、前記第2のガス源は前駆体ガス源を含む、方法。
- 請求項14に記載の方法であって、さらに、前記流路と流体連通する出口を有する第4のバルブを使用して、第4のガス源からガスを選択的に供給することを備える、方法。
- 請求項17に記載の方法であって、前記第4のガス源は洗浄ガス源を含む、方法。
- 請求項18に記載の方法であって、前記洗浄ガス源は遠隔プラズマ洗浄(RPC)ガスを含む、方法。
- 請求項14に記載の方法であって、前記第3のガス源は酸化ガス源を含む、方法。
- 請求項14に記載の方法であって、前記基板処理システムは原子層堆積を行う、方法。
- 請求項14に記載の方法であって、さらに。コントローラを使用して、前記第1のバルブ、前記第2のバルブ、および前記第3のバルブを制御することを備える、方法。
- 請求項22に記載の方法であって、前記コントローラは、
前記第1のバルブおよび前記第2のバルブを使用して、第1の所定期間中、前記第2のガス源から前駆体ガスを供給し、
前記第1のバルブおよび前記第2のバルブを使用して、第2の所定期間中、前記第1のガス源からパージ・ガスを供給し、
前記第3のバルブを使用して、第3の所定期間中、前記第3のガス源から酸化ガスを供給するように構成されている、方法。 - 請求項23に記載の方法であって、
前記第1の所定期間は原子層堆積(ALD)プロセスのドーズ段に相当し、
前記第2の所定期間は前記ALDプロセスのバースト・パージ段に相当し、
前記第3の所定期間はが前記ALDプロセスのドーズ・パージ段、RF段、およびRFパージ段に相当する、方法。 - 請求項17に記載の方法であって、前記第4のバルブと前記コネクタ間の距離は10インチ〜40インチである、方法。
- 請求項17に記載の方法であって、前記第4のバルブと前記コネクタ間の距離は5インチ未満である、方法。
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US10529543B2 (en) * | 2017-11-15 | 2020-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etch process with rotatable shower head |
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US11021792B2 (en) * | 2018-08-17 | 2021-06-01 | Lam Research Corporation | Symmetric precursor delivery |
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US4660598A (en) * | 1986-01-13 | 1987-04-28 | Spraying Systems Co. | Diaphragm-type antidrip valve |
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