JP2016207409A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016207409A5 JP2016207409A5 JP2015086682A JP2015086682A JP2016207409A5 JP 2016207409 A5 JP2016207409 A5 JP 2016207409A5 JP 2015086682 A JP2015086682 A JP 2015086682A JP 2015086682 A JP2015086682 A JP 2015086682A JP 2016207409 A5 JP2016207409 A5 JP 2016207409A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- pipe
- processing chamber
- mass flow
- flow controller
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 210000002381 Plasma Anatomy 0.000 claims 5
- 230000002123 temporal effect Effects 0.000 claims 1
Claims (4)
前記プラズマを生成するための高周波電力を供給する高周波電源と、
前記被処理物が載置される試料台と、
第１ガスと第２ガスを含む処理ガスを前記処理室に供給するガス供給装置と、
前記ガス供給装置を制御する制御装置と、を備え、
前記ガス供給装置は、第１マスフローコントローラと前記第１マスフローコントローラより前記処理室側に配置された第１バルブとが配置され前記第１ガスが流れる第１配管と、第２マスフローコントローラと前記第２マスフローコントローラより前記処理室側に配置された第２バルブとが配置され前記第２ガスが流れる第２配管と、を具備し、
前記制御装置は、前記処理室に供給するガスを時刻Ｔ１に前記第１ガスから前記第２ガスに切り替える場合、前記Ｔ１よりもＴｃ秒前に前記第２バルブを閉とした状態で前記第２マスフローコントローラを所定の流量値に設定し、前記第２バルブを前記Ｔ１に開とし、
前記第１配管と前記第２配管は、第３配管を介して前記処理室に接続され、
前記Ｔｃは、前記処理室の圧力が所定の値となるように前記第２ガスを前記処理室に供給した時における、前記第３配管および前記処理室を満たすのに必要な前記第２ガスの量を用いて求められることを特徴とするプラズマ処理装置。 A processing chamber in which an object to be processed is processed using plasma ;
A high frequency power supply for supplying high frequency power for generating the plasma;
A sample stage on which the workpiece is placed ;
A gas supply device for supplying a first gas and a second gas including processing gas into the processing chamber,
Before Symbol and a that control device to control the gas supply device,
The gas supply device may include a first and a first pipe through the first gas is arranged a valve disposed in the processing chamber side of the first mass flow controller first mass flow controller, the second mass flow controller first A second valve disposed on the processing chamber side from the two mass flow controllers, and a second pipe through which the second gas flows , and
In state pre-SL control apparatus, when switching from the first gas to the gas supplied to the time T1 to the processing chamber to the second gas, the second valves before Tc seconds than the T1 was closed The second mass flow controller is set to a predetermined flow rate value, the second valve is opened at the T1 ,
The first pipe and the second pipe are connected to the processing chamber via a third pipe,
The Tc is the amount of the second gas necessary to fill the third pipe and the processing chamber when the second gas is supplied to the processing chamber so that the pressure in the processing chamber becomes a predetermined value. A plasma processing apparatus characterized by being obtained using a quantity .
前記Ｔｃは、プラズマの発光を用いて求められることを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 1,
The plasma processing apparatus , wherein Tc is obtained using plasma emission .
前記第２配管の容積は、前記Ｔ１における前記第２配管内の圧力が前記第２マスフローコントローラの動作範囲の圧力を超えない容積であるとともに前記第２ガスの流量と前記Ｔｃに基づいて３０〜３０００ｍｍ ３ の範囲内から選択された容積であることを特徴とするプラズマ処理装置。 In the plasma processing apparatus according to claim 1 or 2,
The volume of the second pipe is a volume in which the pressure in the second pipe at T1 does not exceed the pressure in the operating range of the second mass flow controller, and is 30 to 30 based on the flow rate of the second gas and the Tc. A plasma processing apparatus having a volume selected from a range of 3000 mm 3 .
前記プラズマを生成するための高周波電力を供給する高周波電源と、
前記被処理物が載置される試料台と、
第１ガスと第２ガスを含む処理ガスを前記処理室に供給するガス供給装置と、
前記ガス供給装置を制御する制御装置と、を備え、
前記ガス供給装置は、第１マスフローコントローラと前記第１マスフローコントローラより前記処理室側に配置された第１バルブとが配置され前記第１ガスが流れる第１配管と、第２マスフローコントローラと前記第２マスフローコントローラより前記処理室側に配置された第２バルブとが配置され前記第２ガスが流れる第２配管と、を具備し、
前記制御装置は、前記処理室に供給するガスを時刻Ｔ１に前記第１ガスから前記第２ガスに切り替える場合、前記Ｔ１より(Ｔｃ−Ｔ２)秒前、前記第２バルブを閉とした状態で前記第２マスフローコントローラを所定の流量値に設定し、前記第２バルブを前記Ｔ１に開とし、
前記第１配管と前記第２配管は、第３配管を介して前記処理室に接続され、
前記Ｔｃは、前記処理室の圧力が所定の値となるように前記第２ガスを前記処理室に供給した時における、前記第３配管および前記処理室を満たすのに必要な前記第２ガスの量を用いて求められ、
前記Ｔ２は、前記第２マスフローコントローラを用いて前記第２配管を充填した場合の充填圧力の時間変化と、ガス供給開始前の待機時間中に前記第２マスフローコントローラから漏れ出したガスによる前記第２配管内の圧力が前記Ｔ１より前記Ｔ Ｃ 秒前に検知された前記第２配管内の圧力であった場合の充填圧力の時間変化と、前記第２配管の充填圧力の目標値と前記Ｔ１より前記Ｔ Ｃ 秒前に検知された前記第２配管内の圧力との差と、を用いて求められることを特徴とするプラズマ処理装置。 A processing chamber in which an object to be processed is processed using plasma ;
A high frequency power supply for supplying high frequency power for generating the plasma;
A sample stage on which the workpiece is placed ;
A gas supply device for supplying a first gas and a second gas including processing gas into the processing chamber,
Before Symbol and a that control device to control the gas supply device,
The gas supply device may include a first and a first pipe through the first gas is arranged a valve disposed in the processing chamber side of the first mass flow controller first mass flow controller, the second mass flow controller first A second valve disposed on the processing chamber side from the two mass flow controllers, and a second pipe through which the second gas flows , and
Before SL control apparatus, when switching from the first gas to the gas supplied to the time T1 to the processing chamber to the second gas, wherein from T1 (Tc -T2) seconds before, the second valves and the closed In this state, the second mass flow controller is set to a predetermined flow rate value, the second valve is opened at T1 ,
The first pipe and the second pipe are connected to the processing chamber via a third pipe,
The Tc is the amount of the second gas necessary to fill the third pipe and the processing chamber when the second gas is supplied to the processing chamber so that the pressure in the processing chamber becomes a predetermined value. Determined using the quantity,
The T2 is the time change of the filling pressure when the second pipe is filled using the second mass flow controller, and the second gas flow due to the gas leaked from the second mass flow controller during the waiting time before starting the gas supply. the temporal change of the filling pressure when the pressure in the second inner pipe was pressure in the second pipe is detected in the T C seconds before the T1, the target value of the filling pressure in the second pipe T1 the plasma processing apparatus characterized by determined using the a difference between the more the T C seconds pressure within the second pipe that is detected before.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015086682A JP6541406B2 (en) | 2015-04-21 | 2015-04-21 | Plasma processing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015086682A JP6541406B2 (en) | 2015-04-21 | 2015-04-21 | Plasma processing system |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016207409A JP2016207409A (en) | 2016-12-08 |
| JP2016207409A5 true JP2016207409A5 (en) | 2018-02-01 |
| JP6541406B2 JP6541406B2 (en) | 2019-07-10 |
Family
ID=57490144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015086682A Active JP6541406B2 (en) | 2015-04-21 | 2015-04-21 | Plasma processing system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6541406B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7296854B2 (en) * | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | Gas supply method and substrate processing apparatus |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070066038A1 (en) * | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
| JP4782585B2 (en) * | 2006-02-28 | 2011-09-28 | 株式会社日立ハイテクノロジーズ | Plasma etching apparatus and method |
| JP5235293B2 (en) * | 2006-10-02 | 2013-07-10 | 東京エレクトロン株式会社 | Process gas supply mechanism, process gas supply method, and gas processing apparatus |
| JP5442413B2 (en) * | 2009-12-03 | 2014-03-12 | ルネサスエレクトロニクス株式会社 | Semiconductor manufacturing apparatus and flow rate control apparatus |
| JP6027490B2 (en) * | 2013-05-13 | 2016-11-16 | 東京エレクトロン株式会社 | Gas supply method and plasma processing apparatus |
-
2015
- 2015-04-21 JP JP2015086682A patent/JP6541406B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| MX2017014605A (en) | Cleaning appliance. | |
| TW201613016A (en) | Substrate treatment apparatus, and substrate treatment method | |
| MX347904B (en) | Method and system for pneumatic control for vibrator source element. | |
| MX2017006549A (en) | Information generation method and apparatus. | |
| JP2016008693A5 (en) | ||
| TW201614250A (en) | Wafer inspection apparatus | |
| BR112015004383A2 (en) | welder who has feedback control | |
| JP2017085088A5 (en) | ||
| JP2014168046A5 (en) | ||
| SG10201807414RA (en) | Method of inspecting flow rate measuring system | |
| EP4234103A3 (en) | Fluid discharge device, fluid discharge method and fluid application device | |
| WO2014181166A3 (en) | Control apparatus for fuel injection valve and method thereof | |
| JP2014005151A5 (en) | ||
| MX367181B (en) | Operating method for a pump, in particular for a multiphase pump, and pump. | |
| MY193726A (en) | Sterilization process transition method, product filling apparatus, and method and apparatus of cleaning and sterilizing the product filling apparatus | |
| CL2016000580A1 (en) | A method for determining the projected use of gas from a gas cylinder assembly, comprising a gas cylinder and a regulator and valve assembly, by means of a sensor assembly comprising a gas sensor. | |
| WO2016073454A3 (en) | Compressed gad filling method and system | |
| JP2014036024A5 (en) | ||
| JP2016072260A5 (en) | ||
| JP2017036493A5 (en) | ||
| AU2017390258A1 (en) | Common line selector valve for a system | |
| JP2019515140A5 (en) | ||
| TW201614087A (en) | Plasma processing apparatus and plasma processing method | |
| JP2016207409A5 (en) | ||
| JP6281630B2 (en) | Pressurized tank, apparatus for feeding powder into transport pipe, and method for feeding the same |