JP2016178284A - プラズマ処理用のデュアルゾーンヒータ - Google Patents
プラズマ処理用のデュアルゾーンヒータ Download PDFInfo
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- JP2016178284A JP2016178284A JP2016021481A JP2016021481A JP2016178284A JP 2016178284 A JP2016178284 A JP 2016178284A JP 2016021481 A JP2016021481 A JP 2016021481A JP 2016021481 A JP2016021481 A JP 2016021481A JP 2016178284 A JP2016178284 A JP 2016178284A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Formation Of Insulating Films (AREA)
- Ceramic Engineering (AREA)
- Light Guides In General And Applications Therefor (AREA)
- Discharge Heating (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
101 側壁
102 チャンバ本体
103 電力ボックス
104 チャンバリッド
106 シャドウリング
108 ガス分配システム
112 側壁
116 底部壁
120A 処理領域
120B 処理領域
122 通路
124 通路
125 周囲ポンピング空洞
126 ステム
127 ライナアセンブリ
128 加熱されたペデスタル
129 ベースアセンブリ
130 ロッド
131 リフトプレート
132 排気口
133 フランジ
135 周囲リング
140 ガス吸入通路
142 シャワーヘッドアセンブリ
144 ブロッカプレート
146 面板
147 冷却チャネル
148 ベースプレート
151 冷却剤チャネル
158 誘電体アイソレータ
160 ポート
161 リフトピン
164 ポンピングシステム
165 RF源
200 ペデスタル
205 ヒータ本体
210 加熱エレメント
215 第一のシャフト
220 第二のシャフト
230 冷却剤
235 導管
300 ペデスタル
305 壁
310 インターフェース
315 インターフェース
400 ペデスタル
402 下方部
405 第一のプレート
410 第二のプレート
415 ショルダー
420 フローチャネル
425 冷却剤チャネル
430 寸法
435 寸法
440 インターフェース
445 入口
450 出口
455 側壁
500 ペデスタル
501 基板
505 チャネル
510 RFメッシュ
515 上面
520 内側ガスチャネル
525 外側ガスチャネル
600 ペデスタル
602 シャフト
605 リフトピンガイド
610 開口
700 ペデスタル
705 管状の係合部材
710 開口
715 インサート
720 Oリング
725 コネクタ
730 流体チャネル
800 ペデスタル
805 冷却ベース
815 流体チャネル
820 流体チャネル
Claims (15)
- 半導体処理チャンバ用のペデスタルであって、
フランジを有するセラミック材料を含む本体と、
前記本体に埋め込まれた一つ以上の加熱エレメントと、
前記フランジに連結された第一のシャフトと、
前記第一のシャフトに連結された第二のシャフトであって、第二のシャフトの中で終わる、その中に形成された複数の流体チャネルを含む、第二のシャフトと、
を含むペデスタル。 - 前記第一のシャフトが、第一の材料で作られ、前記第二のシャフトが、前記第一の材料と異なる第二の材料で作られる、請求項1に記載のペデスタル。
- 前記流体チャネルの一部が、前記本体の中に伸びて、閉ループの冷却経路を形成する、請求項1に記載のペデスタル。
- 前記第二のシャフトが、前記ペデスタルの前記本体の前記材料と異なる材料で作られるインサートを含む、請求項1に記載のペデスタル。
- 前記インサートが、その中に形成された流体チャネルを含む、請求項4に記載のペデスタル。
- 前記インサートの中に形成された前記流体チャネルが、前記インサートの外側の第二の流体チャネルと流体連通する第一の流体チャネルを含む、請求項5に記載のペデスタル。
- 前記複数の流体チャネルが、第一の組の流体チャネルを含み、前記ペデスタルが、前記第一のシャフトと前記第二のシャフトの中に形成された第二の組の流体チャネルを含む、請求項6に記載のペデスタル。
- 前記第二の組の流体チャネルのうちの一つ以上が、前記本体の中で終わる、請求項1に記載のペデスタル。
- 前記第二の組の流体チャネルのうちの一つ以上が、前記本体の表面で終わる、請求項8に記載のペデスタル。
- 半導体処理チャンバ用のペデスタルであって、
セラミック材料を含む本体と、
前記本体の内部に封入された複数の加熱エレメントと、
前記本体に連結された第一のシャフトと、
前記第一のシャフトに連結された第二のシャフトであって、その中に形成された複数の流体チャネルを含み、前記流体チャネルの少なくとも一部が、第二のシャフトの中で終わる、第二のシャフトと、
を含むペデスタル。 - 前記第二のシャフトが、スリーブによって少なくとも部分的に囲まれる、請求項10に記載のペデスタル。
- 前記複数の流体チャネルが、第一の組の流体チャネルを含み、前記ペデスタルが、前記第一のシャフトと前記第二のシャフトの中に形成された第二の組の流体チャネルを含む、請求項10に記載のペデスタル。
- 前記第二の組の流体チャネルのうちの一つ以上が、前記本体の中で終わる、請求項12に記載のペデスタル。
- インサートが、前記第二のシャフトの内部に配置される、請求項10に記載のペデスタル。
- 前記第一のシャフトが、第一の材料で作られ、前記第二のシャフトが、前記第一の材料と異なる第二の材料で作られる、請求項10に記載のペデスタル。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562113941P | 2015-02-09 | 2015-02-09 | |
US62/113,941 | 2015-02-09 |
Publications (2)
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JP2016178284A true JP2016178284A (ja) | 2016-10-06 |
JP6739182B2 JP6739182B2 (ja) | 2020-08-12 |
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JP2016021481A Active JP6739182B2 (ja) | 2015-02-09 | 2016-02-08 | プラズマ処理用のデュアルゾーンヒータ |
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Country | Link |
---|---|
US (2) | US10497606B2 (ja) |
JP (1) | JP6739182B2 (ja) |
KR (1) | KR102449747B1 (ja) |
CN (2) | CN105870039B (ja) |
TW (1) | TWI674646B (ja) |
Cited By (6)
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CN110488886A (zh) * | 2019-08-29 | 2019-11-22 | 中国科学院国家天文台 | 一种电子器件工作温度控制方法及装置 |
CN110603634A (zh) * | 2017-05-03 | 2019-12-20 | 应用材料公司 | 在高温陶瓷加热器上的集成衬底温度测量 |
WO2021162804A1 (en) * | 2020-02-12 | 2021-08-19 | Applied Materials, Inc. | Fast response dual-zone pedestal assembly for selective preclean |
JP2021536664A (ja) * | 2018-08-31 | 2021-12-27 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | 熱管理システム |
JP7359000B2 (ja) | 2020-01-20 | 2023-10-11 | 東京エレクトロン株式会社 | 基板を処理する装置、及び基板を処理する方法 |
KR102673943B1 (ko) | 2019-05-27 | 2024-06-11 | 주식회사 원익아이피에스 | 기판지지장치 및 이를 구비하는 기판처리장치 |
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2016
- 2016-01-28 US US15/009,345 patent/US10497606B2/en active Active
- 2016-02-02 TW TW105103322A patent/TWI674646B/zh active
- 2016-02-05 CN CN201610083040.6A patent/CN105870039B/zh active Active
- 2016-02-05 KR KR1020160014707A patent/KR102449747B1/ko active IP Right Grant
- 2016-02-05 CN CN201710515830.1A patent/CN107230655B/zh active Active
- 2016-02-08 JP JP2016021481A patent/JP6739182B2/ja active Active
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2019
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CN105870039B (zh) | 2020-12-25 |
CN107230655B (zh) | 2021-01-12 |
US20160230281A1 (en) | 2016-08-11 |
US10811301B2 (en) | 2020-10-20 |
CN107230655A (zh) | 2017-10-03 |
JP6739182B2 (ja) | 2020-08-12 |
CN105870039A (zh) | 2016-08-17 |
KR102449747B1 (ko) | 2022-09-29 |
KR20160098069A (ko) | 2016-08-18 |
TW201630108A (zh) | 2016-08-16 |
TWI674646B (zh) | 2019-10-11 |
US20200051848A1 (en) | 2020-02-13 |
US10497606B2 (en) | 2019-12-03 |
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