JP2016178271A - 垂直キャビティ表面発光レーザ - Google Patents
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- 230000004888 barrier function Effects 0.000 claims abstract description 73
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 41
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 15
- 238000002161 passivation Methods 0.000 claims description 6
- NCMAYWHYXSWFGB-UHFFFAOYSA-N [Si].[N+][O-] Chemical compound [Si].[N+][O-] NCMAYWHYXSWFGB-UHFFFAOYSA-N 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 2
- 230000007774 longterm Effects 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 41
- 230000003287 optical effect Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 238000004891 communication Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000005253 cladding Methods 0.000 description 5
- 239000000835 fiber Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/18347—Mesa comprising active layer
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34386—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers explicitly Al-free
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (10)
- 波長がおよそ850nmのレーザ光を出射する垂直キャビティ表面発光レーザであって、該垂直キャビティ表面発光レーザが活性領域を有し、該活性領域が、
InxGa1−xAsからなる2以上の量子井戸と、
GaAs1−yPyからなり、該量子井戸に接続されている3以上のバリア層とを有し、
該量子井戸およびバリア層における前記x、yについて、該xが0.05から0.1の範囲内にあり、該yが0.2から0.29の範囲内にある垂直キャビティ表面発光レーザ。 - 前記活性領域が、前記バリア層に隣接して形成された分離閉じ込めヘテロ構造層を有し、該分離閉じ込めヘテロ構造層がAlGaAsから形成されている請求項1記載の垂直キャビティ表面発光レーザ。
- 前記分離閉じ込めヘテロ構造層が連続した傾斜路として形成されている請求項2記載の垂直キャビティ表面発光レーザ。
- 前記量子井戸およびバリア層が3nmから5nmの範囲の厚さを有する請求項1〜3のいずれか一項記載の垂直キャビティ表面発光レーザ。
- 前記量子井戸およびバリア層とは、アンドープGaAsまたはp形若しくはn形のドープしたシリコン基板上に成長されている請求項1〜4のいずれか一項記載の垂直キャビティ表面発光レーザ。
- メサ構造と、パッシベーション層とを更に有し、該パッシベーション層がシリコン窒素酸化物若しくはポリマーからなるか、または該シリコン窒素酸化物およびポリマーからなり、前記メサ構造の外側表面を覆うように形成されている請求項1〜5のいずれか一項記載の垂直キャビティ表面発光レーザ。
- 前記活性領域を挟み込む2つの反射鏡層を更に有する請求項1〜6のいずれか一項記載の垂直キャビティ表面発光レーザ。
- 電流閉じ込め構造をもたらす環状酸化層が前記反射鏡層の少なくとも一方に形成されている請求項7記載の垂直キャビティ表面発光レーザ。
- 頂部分布ブラッグ反射鏡と、底部分布ブラッグ反射鏡との間に活性領域が形成され、波長がおよぞ850nmのレーザ光を出射する垂直キャビティ表面発光レーザであって、
前記活性領域は、InxGa1−xAsからなりアルミニウムを含まない2以上の量子井戸と、
該量子井戸に接続され、GaAs1−yPyからなりアルミニウムを含まない3以上のバリア層とを有し、
前記活性領域と前記頂部分布ブラッグ反射鏡との間に電流制限・閉じ込め層が形成され、
該電流制限・閉じ込め層は、中央に配置されているアパーチャ領域の外側に絶縁部が形成され、
該量子井戸およびバリア層における前記x、yについて、該xが0.05から0.1の範囲内にあり、該yが0.2から0.29の範囲内にある垂直キャビティ表面発光レーザ。 - 前記頂部分布ブラッグ反射鏡および前記底部分布ブラッグ反射鏡の側から前記電流制限・閉じ込め層を挟むように形成された位相整合層を更に有する請求項9記載の垂直キャビティ表面発光レーザ。
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CN201510124564.0A CN106033866B (zh) | 2015-03-20 | 2015-03-20 | 垂直腔面发射激光器 |
CN201510124564.0 | 2015-03-20 |
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JP2016178271A true JP2016178271A (ja) | 2016-10-06 |
JP6348084B2 JP6348084B2 (ja) | 2018-06-27 |
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- 2015-03-20 CN CN201510124564.0A patent/CN106033866B/zh active Active
- 2015-04-03 US US14/678,414 patent/US9438010B1/en active Active
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JPH02130988A (ja) * | 1988-11-11 | 1990-05-18 | Furukawa Electric Co Ltd:The | 量子井戸半導体レーザ素子 |
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JP6348084B2 (ja) | 2018-06-27 |
CN106033866B (zh) | 2019-12-03 |
US9438010B1 (en) | 2016-09-06 |
US20160276805A1 (en) | 2016-09-22 |
CN106033866A (zh) | 2016-10-19 |
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