JP2016166860A5 - - Google Patents
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- JP2016166860A5 JP2016166860A5 JP2015253349A JP2015253349A JP2016166860A5 JP 2016166860 A5 JP2016166860 A5 JP 2016166860A5 JP 2015253349 A JP2015253349 A JP 2015253349A JP 2015253349 A JP2015253349 A JP 2015253349A JP 2016166860 A5 JP2016166860 A5 JP 2016166860A5
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- Prior art keywords
- temperature
- circuit
- electronic device
- integrated circuit
- semiconductor integrated
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- 239000004065 semiconductor Substances 0.000 claims 33
- 238000001514 detection method Methods 0.000 claims 15
- 230000015654 memory Effects 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
Claims (20)
電力用半導体装置と、
前記電力用半導体装置を駆動する第1の半導体集積回路装置と、
前記第1の半導体集積回路装置を制御する第2の半導体集積回路装置と、
を備え、
前記電力用半導体装置は、
スイッチングトランジスタと、
温度検出用ダイオードと、
を備え、
前記第1の半導体集積回路装置は、
前記スイッチングトランジスタを駆動する駆動回路と、
前記温度検出用ダイオードからVFを検出する検出回路と、
を備え、
前記第2の半導体集積回路装置は、
前記駆動回路を制御する制御部と、
外気温度情報を取得する外気温度取得部と、
前記温度検出用ダイオードの温度特性データと第1の温度における前記検出回路からの信号に基づいた第1の値を格納する記憶装置と、
前記検出回路からの信号に基づいた第3の値と前記温度特性データと前記外気温度取得部で取得した前記第1の温度と前記第1の値とから前記電力用半導体装置の温度を算出する温度演算処理部と、
を備える。 Electronic devices
A power semiconductor device; and
A first semiconductor integrated circuit device for driving the power semiconductor device;
A second semiconductor integrated circuit device for controlling the first semiconductor integrated circuit device;
With
The power semiconductor device includes:
A switching transistor;
A temperature detection diode;
With
The first semiconductor integrated circuit device includes:
A drive circuit for driving the switching transistor;
A detection circuit for detecting VF from the temperature detection diode;
With
The second semiconductor integrated circuit device includes:
A control unit for controlling the drive circuit;
An outside air temperature acquisition unit for acquiring outside air temperature information;
A storage device for storing a first value based on temperature characteristic data of the temperature detection diode and a signal from the detection circuit at a first temperature;
The temperature of the power semiconductor device is calculated from the third value based on the signal from the detection circuit, the temperature characteristic data, the first temperature acquired by the outside air temperature acquisition unit, and the first value. A temperature calculation processing unit;
Is provided.
前記第2の半導体集積回路装置は、前記第1の値と、前記外気温度取得部で取得した第2の温度において前記検出回路からの信号に基づいた第2の値と、から前記温度特性データを算出する温度係数計算部を備える。 The electronic device of claim 1.
The second semiconductor integrated circuit device includes the temperature characteristic data based on the first value and a second value based on a signal from the detection circuit at the second temperature acquired by the outside air temperature acquisition unit. A temperature coefficient calculation unit for calculating
前記外気温度取得部は外気温度検出器の出力をA/D変換した値またはPC温度設定値に基づいて取得する。 The electronic device of claim 2.
The outside air temperature acquisition unit acquires the output of the outside air temperature detector based on an A / D converted value or a PC temperature setting value.
前記電力用半導体装置は当該電力用半導体装置のID情報を有するID回路を備え、
前記第1の半導体集積回路装置は前記ID情報を前記ID回路から読み出すID読出回路を備え、
前記第2の半導体集積回路装置は前記ID読出回路からの前記ID情報を認識するID認識部を備え、
前記ID情報に基づいて前記電力用半導体装置の製造時のウェハテストによって得られた前記温度特性データを前記記憶装置に格納する。 The electronic device of claim 1.
The power semiconductor device includes an ID circuit having ID information of the power semiconductor device,
The first semiconductor integrated circuit device includes an ID read circuit that reads the ID information from the ID circuit,
The second semiconductor integrated circuit device includes an ID recognition unit for recognizing the ID information from the ID reading circuit,
The temperature characteristic data obtained by a wafer test at the time of manufacturing the power semiconductor device based on the ID information is stored in the storage device.
前記第2の半導体集積回路装置は外部記憶装置に格納される前記温度特性データを前記記憶装置に格納するためのPCインタフェースを備える。 The electronic device of claim 4.
The second semiconductor integrated circuit device includes a PC interface for storing the temperature characteristic data stored in an external storage device in the storage device.
前記温度特性データは前記ウェハテストの第1の温度および第2の温度でのテストにより得るものである。 The electronic device of claim 5.
The temperature characteristic data is obtained by the test at the first temperature and the second temperature of the wafer test.
前記ID情報には前記温度特性データが含まれている。 The electronic device of claim 4.
The ID information includes the temperature characteristic data.
前記温度特性データは前記ウェハテストの第1の温度および第2の温度でのテストにより得るものである。 The electronic device of claim 7.
The temperature characteristic data is obtained by the test at the first temperature and the second temperature of the wafer test.
前記第2の半導体集積回路装置はCPUとプログラムを格納するメモリとを備える。 The electronic device of claim 1.
The second semiconductor integrated circuit device includes a CPU and a memory for storing a program.
前記記憶装置およびメモリはフラッシュメモリである。 The electronic device of claim 2.
The storage device and the memory are flash memories.
前記制御部は、前記検出回路からの温度情報と前記記憶装置に格納される前記温度特性データとに基づいて検出する温度が所定温度を超える場合に、前記駆動回路を停止または抑制する。 The electronic device of claim 1.
The control unit stops or suppresses the drive circuit when a temperature detected based on temperature information from the detection circuit and the temperature characteristic data stored in the storage device exceeds a predetermined temperature.
電力用半導体装置と、
前記電力用半導体装置を駆動する第1の半導体集積回路装置と、
前記第1の半導体集積回路装置を制御する第2の半導体集積回路装置と、
を備え、
前記電力用半導体装置は、
スイッチングトランジスタと、
温度検出用ダイオードと、
当該電力用半導体装置のID情報を記録するID記憶部と、
を備え、
前記第1の半導体集積回路装置は、
前記スイッチングトランジスタを駆動する駆動回路と、
前記温度検出用ダイオードからVFを検出する検出回路と、
を備え、
前記第2の半導体集積回路装置は、
前記駆動回路を制御する制御部と、
外気温度情報を取得する外気温度取得部と、
前記温度検出用ダイオードの温度特性データと第1の温度における前記検出回路からの信号に基づいた第1の値を格納する記憶装置と、
前記検出回路からの信号に基づいた第3の値と前記温度特性データと前記外気温度取得部で取得した前記第1の温度と前記第1の値とから前記電力用半導体装置の温度を算出する温度演算処理部と、
前記ID記憶部からの前記ID情報を認識するID認識部と、
を備え、
前記ID情報に基づいて前記電力用半導体装置の製造時のウェハテストによって得られた前記温度特性を前記記憶装置に格納する。 Electronic devices
A power semiconductor device; and
A first semiconductor integrated circuit device for driving the power semiconductor device;
A second semiconductor integrated circuit device for controlling the first semiconductor integrated circuit device;
With
The power semiconductor device includes:
A switching transistor;
A temperature detection diode;
An ID storage unit for recording ID information of the power semiconductor device;
With
The first semiconductor integrated circuit device includes:
A drive circuit for driving the switching transistor;
A detection circuit for detecting VF from the temperature detection diode;
With
The second semiconductor integrated circuit device includes:
A control unit for controlling the drive circuit;
An outside air temperature acquisition unit for acquiring outside air temperature information;
A storage device for storing a first value based on temperature characteristic data of the temperature detection diode and a signal from the detection circuit at a first temperature;
The temperature of the power semiconductor device is calculated from the third value based on the signal from the detection circuit, the temperature characteristic data, the first temperature acquired by the outside air temperature acquisition unit, and the first value. A temperature calculation processing unit;
An ID recognition unit for recognizing the ID information from the ID storage unit;
With
The temperature characteristic obtained by the wafer test at the time of manufacturing the power semiconductor device based on the ID information is stored in the storage device.
前記ID記憶部は前記電力用半導体装置内に設けられたID回路であり、
前記ID回路は第1端子と第2端子とを備える。 The electronic device of claim 12,
The ID storage unit is an ID circuit provided in the power semiconductor device,
The ID circuit includes a first terminal and a second terminal.
前記第1の半導体集積回路装置はID読出回路を備え、前記第1端子および前記第2端子と接続され、
前記ID情報は前記ID読出回路を介して読み出される。 The electronic device of claim 13.
The first semiconductor integrated circuit device includes an ID readout circuit, and is connected to the first terminal and the second terminal;
The ID information is read through the ID reading circuit.
前記ID情報は、当該電子装置の外部のID読み取り装置によって読み出され、外部の記憶装置に格納される。 The electronic device of claim 13.
The ID information is read by an ID reading device external to the electronic device and stored in an external storage device.
前記ID回路は、さらに、
ラダー抵抗と、
電気フューズと、
を備え、
前記第1端子は前記ラダー抵抗を前記電気フューズで切断した抵抗値を測定するための端子であり、
前記第2端子は基準抵抗値を測定するための端子である。 The electronic device of claim 14.
The ID circuit further includes:
Ladder resistance,
Electric fuses,
With
The first terminal is a terminal for measuring a resistance value obtained by cutting the ladder resistor with the electric fuse,
The second terminal is a terminal for measuring a reference resistance value.
前記電力用半導体装置は、さらに、切替回路を備え、
前記切替回路は前記スイッチングトランジスタのゲート端子と前記第1端子との接続および遮断、前記温度検出用ダイオードのアノード端子と前記第2端子との接続および遮断を行う。 The electronic device of claim 14.
The power semiconductor device further includes a switching circuit,
The switching circuit connects and disconnects the gate terminal of the switching transistor and the first terminal, and connects and disconnects the anode terminal of the temperature detection diode and the second terminal.
前記第1の半導体集積回路装置は、シリアルクロック信号に同期してシリアルデータを前記ID回路に供給し、前記ID回路は前記ID情報を前記シリアルクロック信号に同期して外部に出力する。 The electronic device of claim 14.
The first semiconductor integrated circuit device supplies serial data to the ID circuit in synchronization with a serial clock signal, and the ID circuit outputs the ID information to the outside in synchronization with the serial clock signal.
前記ID情報には前記温度特性データが含まれている。 The electronic device of claim 12,
The ID information includes the temperature characteristic data.
前記ID記憶部は前記電力用半導体装置に設けられたバーコードである。 The electronic device of claim 12,
The ID storage unit is a barcode provided in the power semiconductor device.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105105297A TW201634910A (en) | 2015-03-05 | 2016-02-23 | Electronics device |
US15/055,631 US10247616B2 (en) | 2015-03-05 | 2016-02-28 | Electronics device |
EP16158177.2A EP3065176B1 (en) | 2015-03-05 | 2016-03-02 | Electronics device |
KR1020160025930A KR20160108214A (en) | 2015-03-05 | 2016-03-03 | Electronic device |
CN201610121559.9A CN105938022A (en) | 2015-03-05 | 2016-03-04 | Electronic device |
US16/275,478 US11175189B2 (en) | 2015-03-05 | 2019-02-14 | Electronics device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015043381 | 2015-03-05 | ||
JP2015043381 | 2015-03-05 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016166860A JP2016166860A (en) | 2016-09-15 |
JP2016166860A5 true JP2016166860A5 (en) | 2018-07-05 |
JP6557136B2 JP6557136B2 (en) | 2019-08-07 |
Family
ID=56897613
Family Applications (1)
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---|---|---|---|
JP2015253349A Active JP6557136B2 (en) | 2015-03-05 | 2015-12-25 | Electronic equipment |
Country Status (4)
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---|---|
JP (1) | JP6557136B2 (en) |
KR (1) | KR20160108214A (en) |
CN (1) | CN105938022A (en) |
TW (1) | TW201634910A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI620407B (en) | 2016-12-23 | 2018-04-01 | Actron Technology Corporation | Rectifier package module for vehicle and connection status detection method for temperature sensor thereof |
CN110044510A (en) * | 2019-05-17 | 2019-07-23 | 上海希形科技有限公司 | IGBT module temperature measurement circuit, temp measuring method and computer readable storage medium |
KR102219434B1 (en) * | 2019-08-14 | 2021-02-24 | 현대모비스 주식회사 | Power device driving control apparatus |
JP2021089981A (en) * | 2019-12-04 | 2021-06-10 | 株式会社デンソー | Semiconductor device |
CN111288009B (en) * | 2020-03-06 | 2022-01-18 | 上海申矽凌微电子科技有限公司 | Method and system for integrating temperature voltage monitoring and fan control |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0540533A (en) | 1991-08-06 | 1993-02-19 | Fujitsu Ltd | Temperature detection system for electronic device |
JP5226248B2 (en) * | 2006-08-02 | 2013-07-03 | ルネサスエレクトロニクス株式会社 | Temperature detection circuit and semiconductor device |
CN101452044B (en) * | 2007-12-07 | 2011-01-26 | 财团法人工业技术研究院 | LED life test apparatus and method |
JP2010014445A (en) * | 2008-07-01 | 2010-01-21 | Seiko Instruments Inc | Semiconductor temperature sensor |
DE112011102926B4 (en) * | 2010-09-03 | 2018-10-11 | Mitsubishi Electric Corp. | Semiconductor device |
JP5786571B2 (en) * | 2011-09-07 | 2015-09-30 | 富士電機株式会社 | Power semiconductor device temperature measurement device |
JP5861590B2 (en) * | 2012-07-30 | 2016-02-16 | 株式会社デンソー | Temperature detection device |
-
2015
- 2015-12-25 JP JP2015253349A patent/JP6557136B2/en active Active
-
2016
- 2016-02-23 TW TW105105297A patent/TW201634910A/en unknown
- 2016-03-03 KR KR1020160025930A patent/KR20160108214A/en unknown
- 2016-03-04 CN CN201610121559.9A patent/CN105938022A/en active Pending
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