JP2016162931A - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 238000012545 processing Methods 0.000 title claims abstract description 56
- 238000003672 processing method Methods 0.000 title claims description 14
- 239000007789 gas Substances 0.000 claims abstract description 399
- 238000010926 purge Methods 0.000 claims abstract description 123
- 238000005530 etching Methods 0.000 claims abstract description 88
- 239000012495 reaction gas Substances 0.000 claims abstract description 71
- 238000009826 distribution Methods 0.000 claims abstract description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 33
- 229910052731 fluorine Inorganic materials 0.000 claims description 33
- 239000011737 fluorine Substances 0.000 claims description 33
- 230000002093 peripheral effect Effects 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 14
- 230000004913 activation Effects 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 43
- 238000000034 method Methods 0.000 description 40
- 238000000926 separation method Methods 0.000 description 40
- 230000008569 process Effects 0.000 description 26
- 238000004088 simulation Methods 0.000 description 24
- 229910004298 SiO 2 Inorganic materials 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000012546 transfer Methods 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
【解決手段】真空容器内に回転可能に設けられ、基板を載置可能な回転テーブルと、回転テーブルの表面に第1の反応ガスを供給可能な第1の反応ガス供給部と、第1の反応ガス供給部から回転テーブルの周方向に離間して設けられ、回転テーブルの表面に第1の反応ガスと反応する第2の反応ガスを供給可能な第2の反応ガス供給部と、第1の反応ガス供給部及び第2の反応ガス供給部から回転テーブルの周方向に離間して設けられ、回転テーブルの表面に活性化されたエッチングガスを供給可能な活性化ガス供給部と、活性化ガス供給部と接近して回転テーブルの周方向に設けられ、回転テーブルの表面にパージガスを供給可能な複数のパージガス供給部とを備え、複数のパージガス供給部の各々から供給されるパージガスの流量が独立して制御可能である、基板処理装置が提供される。
【選択図】図6
Description
本発明の一実施形態に係る基板処理装置について説明する。図1は、本発明の一実施形態に係る基板処理装置の概略断面図である。図2は、本発明の一実施形態に係る基板処理装置の概略平面図である。図3は、本発明の一実施形態に係る基板処理装置における分離領域を説明するための一部断面図である。図4は、本発明の一実施形態に係る基板処理装置の他の断面を示す一部断面図である。
本発明の一実施形態に係る基板処理装置を用いた基板処理方法の一例について説明する。以下では、ウエハW上に形成された凹形状パターンの1つであるビア内にSiO2膜を形成する方法を例として説明する。なお、第1の反応ガスとしてSi含有ガス、第2の反応ガスとして酸化ガス、エッチングガスとしてCF4とArガスとO2ガスとH2ガスとの混合ガス(以下「CF4/Ar/O2/H2ガス」という。)を用いる場合を例として説明する。
次に、本発明の一実施形態に係る基板処理装置を用いて、シミュレーションを行った。
2 回転テーブル
31、32 反応ガスノズル
90 活性化ガス供給部
93 シャワーヘッド部
93a ガス吐出孔
96 パージガス供給部
100 制御部
W ウエハ
Claims (14)
- 真空容器内に回転可能に設けられ、基板を載置可能な回転テーブルと、
前記回転テーブルの表面に第1の反応ガスを供給可能な第1の反応ガス供給部と、
前記第1の反応ガス供給部から前記回転テーブルの周方向に離間して設けられ、前記回転テーブルの表面に前記第1の反応ガスと反応する第2の反応ガスを供給可能な第2の反応ガス供給部と、
前記第1の反応ガス供給部及び前記第2の反応ガス供給部から前記回転テーブルの周方向に離間して設けられ、前記回転テーブルの表面に活性化されたエッチングガスを供給可能な吐出孔が形成された吐出部を含む活性化ガス供給部と、
前記吐出孔と接近して前記回転テーブルの周方向に設けられ、前記回転テーブルの表面にパージガスを供給可能な複数のパージガス供給部と
を備え、
前記複数のパージガス供給部の各々から供給される前記パージガスの流量が独立して制御可能である、
基板処理装置。 - 前記複数のパージガス供給部の各々は、前記回転テーブルの半径方向に沿って互いに接近して設けられている、
請求項1に記載の基板処理装置。 - 前記複数のパージガス供給部は、少なくとも前記回転テーブルの回転方向の後方に設けられている、
請求項1又は2に記載の基板処理装置。 - 前記複数のパージガス供給部は、前記吐出部に一体に設けられている、
請求項3に記載の基板処理装置。 - 前記吐出孔は、前記回転テーブルの外周側よりも前記回転テーブルの回転中心側に多く配置されている、
請求項1乃至4のいずれか一項に記載の基板処理装置。 - 前記第1の反応ガスはシリコン含有ガスであり、
前記第2の反応ガスは酸化ガスであり、
前記エッチングガスは、フッ素含有ガスであり、
前記パージガスは、水素含有ガスである、
請求項1乃至5のいずれか一項に記載の基板処理装置。 - 前記活性化ガス供給部により前記回転テーブルの表面に供給される前記エッチングガスの分布に基づいて、前記複数のパージガス供給部の各々から供給される前記パージガスの流量を制御する制御部を更に有する、
請求項1乃至6のいずれか一項に記載の基板処理装置。 - 前記制御部は、
前記基板の表面に成膜のみを行うときには、前記第1の反応ガス供給部及び前記第2の反応ガス供給部から前記第1の反応ガス及び前記第2の反応ガスを各々供給すると共に、前記活性化ガス供給部からの前記エッチングガスの供給を停止し、
前記基板の表面に形成された膜のエッチングのみを行うときには、前記第1の反応ガス供給部及び前記第2の反応ガス供給部からの前記第1の反応ガス及び前記第2の反応ガスの供給を停止すると共に、前記活性化ガス供給部及び前記パージガス供給部から前記エッチングガス及び前記パージガスを各々供給する、
請求項7に記載の基板処理装置。 - 真空容器内に設けられた回転テーブルの表面に基板を載置し、回転テーブルを回転させながらエッチングガスを真空容器内に供給し、前記基板の表面に形成された膜をエッチングするエッチング工程を含む基板処理方法であって、
前記エッチング工程は、前記回転テーブルの表面にエッチングガスを供給すると共に、前記エッチングガスが供給される領域の近傍に設けられた複数のパージガス供給部からパージガスを供給する工程を含み、
前記複数のパージガス供給部の各々から供給される前記パージガスの流量を独立に変化させることにより、前記膜をエッチングするエッチング量を制御する、
基板処理方法。 - 前記回転テーブルの表面に供給される前記エッチングガスの分布に基づいて、前記複数のパージガス供給部の各々から供給される前記パージガスの流量を変化させる、
請求項9に記載の基板処理方法。 - 前記エッチング量を大きくするときには前記パージガスの流量を小さくし、前記エッチング量を小さくするときには前記パージガスの流量を大きくする、
請求項10に記載の基板処理方法。 - 前記回転テーブルを回転させながら、第1の反応ガスと、前記第1の反応ガスと反応する第2の反応ガスとを前記真空容器内に供給し、前記基板の表面に膜を形成する成膜工程を更に有する、
請求項9乃至11のいずれか一項に記載の基板処理方法。 - 前記成膜工程は、前記回転テーブルを複数回連続的に回転させながら、前記エッチングガスを前記真空容器内に供給することなく、前記第1の反応ガス及び前記第2の反応ガスを前記真空容器内に供給する工程を含み、
前記エッチング工程は、前記回転テーブルを複数回連続的に回転させながら、前記第1の反応ガス及び前記第2の反応ガスを前記真空容器内に供給することなく、前記エッチングガス及び前記パージガスを前記真空容器内に供給する工程を含む、
請求項12に記載の基板処理方法。 - 前記回転テーブルを複数回連続的に回転させながら、前記第1の反応ガス、前記第2の反応ガス、前記エッチングガス及び前記パージガスを前記真空容器内に同時に供給し、前記回転テーブルが1回転する間に、前記成膜工程と前記エッチング工程とを1回ずつ行うサイクルを複数回繰り返す、
請求項12に記載の基板処理方法。
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