JP2016136631A - 専用のセレクタトランジスタが不要な自己選択式pcmデバイス - Google Patents
専用のセレクタトランジスタが不要な自己選択式pcmデバイス Download PDFInfo
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- JP2016136631A JP2016136631A JP2016035291A JP2016035291A JP2016136631A JP 2016136631 A JP2016136631 A JP 2016136631A JP 2016035291 A JP2016035291 A JP 2016035291A JP 2016035291 A JP2016035291 A JP 2016035291A JP 2016136631 A JP2016136631 A JP 2016136631A
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- pcm
- zno
- metal line
- gst
- memory cell
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000011787 zinc oxide Substances 0.000 claims abstract description 26
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims 11
- 239000002184 metal Substances 0.000 claims 11
- 230000004888 barrier function Effects 0.000 claims 2
- 238000003860 storage Methods 0.000 abstract description 17
- 238000000151 deposition Methods 0.000 abstract description 8
- 238000000231 atomic layer deposition Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- -1 p-type GST Chemical compound 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/73—Array where access device function, e.g. diode function, being merged with memorizing function of memory element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
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- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
【解決手段】原子層堆積法(ALD)を使用して、亜鉛酸化物(ZnO)を層変化材料の上に堆積させることで、自己選択型記憶デバイスが形成される。ZnO/GST界面に形成されるダイオードは、PCMアーキテクチャ内で、整流能力と記憶能力の両方を示す。
【選択図】図7
Description
302 n型ZnO層
304 p型GST層
306 ヘテロ接合ダイオード
308 TiN層
402 ドット
502 セルシーリングSiN
504 誘電体充填
602 ビット線
700 PCM記憶デバイス
702 GST層
704 n型ZnO層
706 ダイオード
708 キャップ層
710 ヒータ
712 GSTドット領域
902 非選択領域
904 2ボルト限界より下の領域
WT 上接点
WB 下接点
Claims (6)
- 第1の金属線と、
第2の金属線と、
前記第1の金属線と第2の金属線との間の誘電体と、
前記第1の金属線と前記誘電体との間にあり、前記第1の金属線と前記誘電体を接触させる第1のバリアと、
前記第2の金属線と前記誘電体との間にあり、前記第2の金属線と前記誘電体を接触させる第2のバリアと、
n型亜鉛酸化物(ZnO)材料を含む酸化物を主材とする材料を固有のp型結晶質PCM材料と直接接触させて、前記PCM材料に埋め込まれたダイオード接続を形成する、第1のメモリセルであって、前記ZnO材料が前記第1の金属線に接触している、第1のメモリセルと、
前記ZnO層及び前記PCM材料に積層されて配置された第1の材料と、
n型亜鉛酸化物(ZnO)材料を含む酸化物を主材とする材料を固有のp型結晶質PCM材料と直接接触させて、前記PCM材料に埋め込まれたダイオード接続を形成する、第2のメモリセルであって、前記ZnO材料が前記第2の金属線に接続されている、第2のメモリセルと、
前記ZnO層及び前記PCM材料に積層されて配置された第2の材料と、を備えているPCM。 - 前記第1及び第2の金属線の各々が銅を含む、請求項1に記載のPCM。
- 前記第1のメモリセルの前記PCM材料の抵抗を読み取ることによる前記第1のメモリセルの状態の検出を可能にするために、2ボルト以下の正バイアスが前記ダイオード接合部を順バイアスする、請求項1に記載のPCM。
- 前記第1の材料がTiNを含む、請求項1に記載のPCM。
- 前記第2の材料がTiNを含む、請求項1に記載のPCM。
- 前記第1のメモリセルの前記PCM材料は、前記第1のメモリセルの前記ZnO層の上へ直接堆積されている、請求項1に記載のPCM。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/651,097 US8847186B2 (en) | 2009-12-31 | 2009-12-31 | Self-selecting PCM device not requiring a dedicated selector transistor |
US12/651,097 | 2009-12-31 |
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JP2010272982A Division JP2011139057A (ja) | 2009-12-31 | 2010-11-18 | 専用のセレクタトランジスタが不要な自己選択式pcmデバイス |
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JP2016136631A true JP2016136631A (ja) | 2016-07-28 |
JP6225203B2 JP6225203B2 (ja) | 2017-11-01 |
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JP2016035291A Active JP6225203B2 (ja) | 2009-12-31 | 2016-02-26 | 専用のセレクタトランジスタが不要な自己選択式pcmデバイス |
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US (2) | US8847186B2 (ja) |
JP (2) | JP2011139057A (ja) |
CN (1) | CN102117884B (ja) |
DE (1) | DE102010052538A1 (ja) |
SG (1) | SG172525A1 (ja) |
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CN102117884B (zh) | 2016-01-20 |
JP6225203B2 (ja) | 2017-11-01 |
US8847186B2 (en) | 2014-09-30 |
SG172525A1 (en) | 2011-07-28 |
US20110155984A1 (en) | 2011-06-30 |
US20150008387A1 (en) | 2015-01-08 |
CN102117884A (zh) | 2011-07-06 |
US9620710B2 (en) | 2017-04-11 |
JP2011139057A (ja) | 2011-07-14 |
DE102010052538A1 (de) | 2011-07-07 |
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