JP2016134428A - エッチング方法 - Google Patents
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- JP2016134428A JP2016134428A JP2015006771A JP2015006771A JP2016134428A JP 2016134428 A JP2016134428 A JP 2016134428A JP 2015006771 A JP2015006771 A JP 2015006771A JP 2015006771 A JP2015006771 A JP 2015006771A JP 2016134428 A JP2016134428 A JP 2016134428A
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- 238000000034 method Methods 0.000 title claims abstract description 140
- 238000005530 etching Methods 0.000 title claims abstract description 40
- 238000012545 processing Methods 0.000 claims abstract description 146
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 194
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 239000011261 inert gas Substances 0.000 claims description 12
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 82
- 239000010408 film Substances 0.000 description 28
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 16
- 101000911772 Homo sapiens Hsc70-interacting protein Proteins 0.000 description 14
- 101000661807 Homo sapiens Suppressor of tumorigenicity 14 protein Proteins 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 7
- 229910001882 dioxygen Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007790 scraping Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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Abstract
Description
・処理容器内圧力:10mTorr(1.33Pa)〜50mTorr(6.65Pa)
・処理ガス
C4F8ガス:10sccm〜30sccm
CF4ガス:150sccm〜300sccm
Arガス:200sccm〜500sccm
・プラズマ生成用の高周波電力:300W〜1000W
・高周波バイアス電力:200W〜500W
・処理容器内圧力:50mTorr(6.65Pa)〜200mTorr(26.6Pa)
・処理ガス
N2ガス:200sccm〜400sccm
H2ガス:200sccm〜400sccm
・プラズマ生成用の高周波電力:500W〜2000W
・高周波バイアス電力:200W〜500W
・処理容器内圧力:10mTorr(1.33Pa)〜50mTorr(6.65Pa)
・処理ガス
C4F8ガス:10sccm〜30sccm
CF4ガス:50sccm〜150sccm
Arガス:500sccm〜1000sccm
O2ガス:10sccm〜30sccm
・プラズマ生成用の高周波電力:500W〜2000W
・高周波バイアス電力:500W〜2000W
・処理容器内圧力:30mTorr(3.99Pa)〜200mTorr(26.6Pa)
・処理ガス
O2ガス:50sccm〜500sccm
Arガス:200sccm〜1500sccm
・プラズマ生成用の高周波電力:100W〜500W
・高周波バイアス電力:0W〜200W
・処理容器内圧力:10mTorr(1.33Pa)〜50mTorr(6.65Pa)
・処理ガス
C4F6ガス:2sccm〜10sccm
Arガス:500sccm〜1500sccm
・プラズマ生成用の高周波電力:100W〜300W
・高周波バイアス電力:0W
・処理容器内圧力:10mTorr(1.33Pa)〜50mTorr(6.65Pa)
・処理ガス
C4F6ガス:2sccm〜10sccm
Arガス:500sccm〜1500sccm
・プラズマ生成用の高周波電力:300W〜1000W
・高周波バイアス電力:0W
・処理容器内圧力:10mTorr(1.33Pa)〜50mTorr(6.65Pa)
・処理ガス
O2ガス:2sccm〜20sccm
Arガス:500sccm〜1500sccm
・プラズマ生成用の高周波電力:100W〜500W
・高周波バイアス電力:0W
・処理容器内圧力:10mTorr(1.33Pa)〜50mTorr(6.65Pa)
・処理ガス
Arガス:500sccm〜1500sccm
・プラズマ生成用の高周波電力:100W〜500W
・高周波バイアス電力:20W〜300W
Claims (4)
- 酸化シリコンから構成された第1領域及び窒化シリコンから構成された第2領域を有する被処理体に対するプラズマ処理によって、前記第1領域を前記第2領域に対して選択的にエッチングする方法であって、
前記被処理体を収容した処理容器内においてフルオロカーボンガスを含む処理ガスのプラズマを生成する第1工程と、
前記被処理体を収容した処理容器内においてフルオロカーボンガスを含む処理ガスのプラズマを更に生成する第2工程と、
前記第1工程及び前記第2工程により前記被処理体上に形成される堆積物に含まれるフルオロカーボンのラジカルによって前記第1領域をエッチングする第3工程と、
を含み、
前記第1工程において前記プラズマを生成するために利用される高周波電力が、前記第2工程において前記プラズマを生成するために利用される高周波電力よりも小さい、方法。 - 前記第1工程、前記第2工程、及び前記第3工程を順に含むシーケンスが、繰り返し実行される、請求項1に記載の方法。
- 前記第2領域は、凹部を画成し、
前記第1領域は、前記凹部を埋め、且つ前記第2領域を覆うように設けられており、
前記被処理体は、前記第1領域上に設けられたマスクを有し、該マスクは、前記凹部の上に該凹部の幅よりも広い幅を有する開口を提供し、
前記第2領域が露出する直前まで前記第1領域をエッチングする工程を更に含み、
前記シーケンスは、前記第2領域が露出する直前まで前記第1領域をエッチングする前記工程の後に実行される、
請求項2に記載の方法。 - 前記シーケンスは、前記被処理体を収容した前記処理容器内において、酸素含有ガス及び不活性ガスを含む処理ガスのプラズマを生成する第4工程を更に含む、
請求項3に記載の方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015006771A JP6504827B2 (ja) | 2015-01-16 | 2015-01-16 | エッチング方法 |
EP16151257.9A EP3046138A1 (en) | 2015-01-16 | 2016-01-14 | Etching method |
TW105101025A TWI713486B (zh) | 2015-01-16 | 2016-01-14 | 蝕刻方法(二) |
KR1020160004853A KR102458996B1 (ko) | 2015-01-16 | 2016-01-14 | 에칭 방법 |
US14/995,552 US10109495B2 (en) | 2015-01-16 | 2016-01-14 | Plasma etching method for selectively etching silicon oxide with respect to silicon nitride |
CN201610025668.0A CN105810582B (zh) | 2015-01-16 | 2016-01-15 | 蚀刻方法 |
US16/112,435 US10580655B2 (en) | 2015-01-16 | 2018-08-24 | Plasma etching method for selectively etching silicon oxide with respect to silicon nitride |
US16/750,530 US11264246B2 (en) | 2015-01-16 | 2020-01-23 | Plasma etching method for selectively etching silicon oxide with respect to silicon nitride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015006771A JP6504827B2 (ja) | 2015-01-16 | 2015-01-16 | エッチング方法 |
Publications (2)
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JP6504827B2 (ja) | 2015-01-16 | 2019-04-24 | 東京エレクトロン株式会社 | エッチング方法 |
JP2016157793A (ja) | 2015-02-24 | 2016-09-01 | 東京エレクトロン株式会社 | エッチング方法 |
JP2018022830A (ja) * | 2016-08-05 | 2018-02-08 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
JP6767302B2 (ja) * | 2017-04-14 | 2020-10-14 | 東京エレクトロン株式会社 | 成膜方法 |
JP6877316B2 (ja) * | 2017-11-08 | 2021-05-26 | 東京エレクトロン株式会社 | エッチング方法 |
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US10109495B2 (en) | 2018-10-23 |
JP6504827B2 (ja) | 2019-04-24 |
US20200161138A1 (en) | 2020-05-21 |
US20160211150A1 (en) | 2016-07-21 |
KR20160088819A (ko) | 2016-07-26 |
US20180366338A1 (en) | 2018-12-20 |
TWI713486B (zh) | 2020-12-21 |
CN105810582B (zh) | 2019-12-10 |
US11264246B2 (en) | 2022-03-01 |
CN105810582A (zh) | 2016-07-27 |
TW201637092A (zh) | 2016-10-16 |
KR102458996B1 (ko) | 2022-10-25 |
EP3046138A1 (en) | 2016-07-20 |
US10580655B2 (en) | 2020-03-03 |
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