JP2016129208A - 半導体レーザ装置 - Google Patents
半導体レーザ装置 Download PDFInfo
- Publication number
- JP2016129208A JP2016129208A JP2015003557A JP2015003557A JP2016129208A JP 2016129208 A JP2016129208 A JP 2016129208A JP 2015003557 A JP2015003557 A JP 2015003557A JP 2015003557 A JP2015003557 A JP 2015003557A JP 2016129208 A JP2016129208 A JP 2016129208A
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- semiconductor laser
- layer
- laser
- light
- liquid crystal
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Abstract
【解決手段】
この半導体レーザ装置は、独立駆動可能な複数の半導体レーザ部LDCと、複数の半導体レーザ部LDCのグループに光学的に結合した空間光変調器SLMとを備えた半導体レーザ装置である。複数の半導体レーザ部LDCの活性層4のグループと反射膜23との間に配置された1/4波長板26と、複数の半導体レーザ部LDCの活性層4のグループと光出射面との間に配置された偏光板27とを備える。
【選択図】 図1
Description
Claims (4)
- 独立駆動可能な複数の半導体レーザ部と、
複数の前記半導体レーザ部のグループに光学的に結合した空間光変調器と、
を備えた半導体レーザ装置であって、
個々の前記半導体レーザ部は、
活性層と、
前記活性層を挟む一対のクラッド層と、
前記活性層に光学的に結合した回折格子層と、
を備え、
複数の前記半導体レーザ部は、それぞれの厚み方向に沿ってレーザ光を出力し、
前記空間光変調器は、
液晶層と、
前記液晶層の前記半導体レーザ部とは反対側に設けられた反射膜と、
二次元状に配置された複数の画素電極と、
前記画素電極と共に前記液晶層を挟む共通電極と、
を備え、
それぞれの前記半導体レーザ部から出射されたレーザ光は、前記空間光変調器内に入射し、それぞれの前記画素電極による前記液晶層の状態に応じて変調され、
前記空間光変調器の前記反射膜で反射され、変調されたレーザ光は、それぞれの前記半導体レーザ部を再度介して、それぞれの前記半導体レーザ部の光出射面から外部に出力され、
前記半導体レーザ装置は、
複数の前記半導体レーザ部の前記活性層のグループと前記反射膜との間に配置された1/4波長板と、
複数の前記半導体レーザ部の前記活性層のグループと前記光出射面との間に配置された偏光板と、
を備えることを特徴とする半導体レーザ装置。 - 個々の前記画素電極の幅は、個々の半導体レーザ部の幅の1/2以下である、
ことを特徴とする請求項1に記載の半導体レーザ装置。 - 複数の前記半導体レーザ部は、
第1波長のレーザ光を出力する第1半導体レーザ部と、
第2波長のレーザ光を出力する第2半導体レーザ部と、
第3波長のレーザ光を出力する第3半導体レーザ部と、
を備え、
前記第1、第2、及び第3波長は、互いに異なっていることを特徴とする請求項1又は2に記載の半導体レーザ装置。 - 複数の前記半導体レーザ部は、
第4波長のレーザ光を出力する第4半導体レーザ部と、
第5波長のレーザ光を出力する第5半導体レーザ部と、
第6波長のレーザ光を出力する第6半導体レーザ部と、
を備え、
前記第1、第2、第3、第4、第5及び第6波長は、互いに異なっていることを特徴とする請求項3に記載の半導体レーザ装置。
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