JP2016127011A5

JP2016127011A5 -

Info

Publication number: JP2016127011A5
Application number: JP2015242161A
Authority: JP
Filing date: 2015-12-11
Publication date: 2018-07-05
Anticipated expiration: 2035-12-11

Claims

熱硬化性成分として熱硬化性化合物及び熱硬化剤と、複数のはんだ粒子とを含み、
前記熱硬化性化合物が、重量平均分子量が５０００以上、５００００以下である熱硬化性化合物と、結晶性熱硬化性化合物とを含み、
前記はんだ粒子は、中心部分及び導電性の外表面のいずれもがはんだである粒子である、導電フィルム。 Including a thermosetting compound and a thermosetting agent as a thermosetting component, and a plurality of solder particles;
The thermosetting compound includes a thermosetting compound having a weight average molecular weight of 5000 or more and 50000 or less, and a crystalline thermosetting compound,
The solder particles are conductive films in which both the central portion and the conductive outer surface are solder particles.

前記結晶性熱硬化性化合物が２５℃で固体である、請求項１に記載の導電フィルム。 The conductive film according to claim 1, wherein the crystalline thermosetting compound is solid at 25 ° C.

前記結晶性熱硬化性化合物の融点が８０℃以上、１５０℃以下である、請求項１又は２に記載の導電フィルム。 The conductive film according to claim 1, wherein the crystalline thermosetting compound has a melting point of 80 ° C. or higher and 150 ° C. or lower.

前記結晶性熱硬化性化合物の分子量が３００以上、５００以下である、請求項１〜３のいずれか１項に記載の導電フィルム。 The conductive film according to any one of claims 1 to 3, wherein the crystalline thermosetting compound has a molecular weight of 300 or more and 500 or less.

前記結晶性熱硬化性化合物は、ベンゾフェノン型エポキシ化合物である、請求項１〜４のいずれか１項に記載の導電フィルム。 The conductive film according to claim 1, wherein the crystalline thermosetting compound is a benzophenone type epoxy compound.

前記はんだ粒子の平均粒子径が０．５μｍ以上、４０μｍ以下である、請求項１〜５のいずれか１項に記載の導電フィルム。 The conductive film according to claim 1, wherein the solder particles have an average particle diameter of 0.5 μm or more and 40 μm or less.

前記はんだ粒子の含有量が１０重量％以上、９０重量％以下である、請求項１〜６のいずれか１項に記載の導電フィルム。 The conductive film according to claim 1, wherein a content of the solder particles is 10% by weight or more and 90% by weight or less.

少なくとも１つの第１の電極を表面に有する第１の接続対象部材と、
少なくとも１つの第２の電極を表面に有する第２の接続対象部材と、
前記第１の接続対象部材と、前記第２の接続対象部材とを接続している接続部とを備え、
前記接続部の材料が、請求項１〜７のいずれか１項に記載の導電フィルムであり、
前記第１の電極と前記第２の電極とが、前記接続部中のはんだ部により電気的に接続されている、接続構造体。 A first connection target member having at least one first electrode on its surface;
A second connection target member having at least one second electrode on its surface;
A connecting portion connecting the first connection target member and the second connection target member;
The material of the connection part is the conductive film according to any one of claims 1 to 7,
A connection structure in which the first electrode and the second electrode are electrically connected by a solder portion in the connection portion.

前記第２の接続対象部材が、半導体チップ、樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル又はリジッドフレキシブル基板である、請求項８に記載の接続構造体。 The connection structure according to claim 8, wherein the second connection target member is a semiconductor chip, a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board.

前記第１の電極と前記接続部と前記第２の電極との積層方向に前記第１の電極と前記第２の電極との対向し合う部分をみたときに、前記第１の電極と前記第２の電極との対向し合う部分の面積１００％中の５０％以上に、前記接続部中のはんだ部が配置されている、請求項８又は９に記載の接続構造体。 When the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode, the first electrode and the second electrode The connection structure according to claim 8 or 9, wherein a solder portion in the connection portion is arranged in 50% or more of an area of 100% of a portion facing the two electrodes.

前記第１の電極と前記接続部と前記第２の電極との積層方向と直交する方向に前記第１の電極と前記第２の電極との対向し合う部分をみたときに、前記第１の電極と前記第２の電極との対向し合う部分に、前記接続部中のはんだ部の７０％以上が配置されている、請求項８〜１０のいずれか１項に記載の接続構造体。 When the portion where the first electrode and the second electrode face each other in the direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode is seen, The connection structure according to any one of claims 8 to 10, wherein 70% or more of a solder portion in the connection portion is disposed at a portion where the electrode and the second electrode face each other.

請求項１〜７のいずれか１項に記載の導電フィルムを用いて、少なくとも１つの第１の電極を表面に有する第１の接続対象部材の表面上に、前記導電フィルムを配置する工程と、
前記導電フィルムの前記第１の接続対象部材側とは反対の表面上に、少なくとも１つの第２の電極を表面に有する第２の接続対象部材を、前記第１の電極と前記第２の電極とが対向するように配置する工程と、
前記はんだ粒子の融点以上かつ前記熱硬化性成分の硬化温度以上に前記導電フィルムを加熱することで、前記第１の接続対象部材と前記第２の接続対象部材とを接続している接続部を、前記導電フィルムにより形成し、かつ、前記第１の電極と前記第２の電極とを、前記接続部中のはんだ部により電気的に接続する工程とを備える、接続構造体の製造方法。 The process of arrange | positioning the said conductive film on the surface of the 1st connection object member which has at least 1 1st electrode on the surface using the conductive film of any one of Claims 1-7,
On the surface opposite to the first connection target member side of the conductive film, a second connection target member having at least one second electrode on the surface, the first electrode and the second electrode And a step of arranging so as to face each other
By connecting the first connection target member and the second connection target member by heating the conductive film above the melting point of the solder particles and above the curing temperature of the thermosetting component, And a step of electrically connecting the first electrode and the second electrode with a solder portion in the connection portion, the method comprising: forming the conductive film;

前記第２の接続対象部材を配置する工程及び前記接続部を形成する工程において、加圧を行わず、前記導電フィルムには、前記第２の接続対象部材の重量が加わるか、又は、
前記第２の接続対象部材を配置する工程及び前記接続部を形成する工程の内の少なくとも一方において、加圧を行い、かつ、前記第２の接続対象部材を配置する工程及び前記接続部を形成する工程の双方において、加圧の圧力が１ＭＰａ未満である、請求項１２に記載の接続構造体の製造方法。 In the step of arranging the second connection target member and the step of forming the connection portion, pressure is not applied, and the conductive film is subjected to the weight of the second connection target member, or
In at least one of the step of arranging the second connection target member and the step of forming the connection portion, pressurizing and forming the second connection target member and the connection portion are formed. The manufacturing method of the connection structure according to claim 12, wherein the pressure of pressurization is less than 1 MPa in both of the steps to be performed.

前記第２の接続対象部材が、半導体チップ、樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル又はリジッドフレキシブル基板である、請求項１２又は１３に記載の接続構造体の製造方法。 The manufacturing method of the connection structure of Claim 12 or 13 whose said 2nd connection object member is a semiconductor chip, a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate.

前記第１の電極と前記接続部と前記第２の電極との積層方向に前記第１の電極と前記第２の電極との対向し合う部分をみたときに、前記第１の電極と前記第２の電極との対向し合う部分の面積１００％中の５０％以上に、前記接続部中のはんだ部が配置されている接続構造体を得る、請求項１２〜１４のいずれか１項に記載の接続構造体の製造方法。 When the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode, the first electrode and the second electrode The connection structure body according to any one of claims 12 to 14, wherein a solder portion in the connection portion is arranged in 50% or more of an area of 100% of a portion facing the two electrodes. Method for manufacturing the connection structure of the present invention.

前記第１の電極と前記接続部と前記第２の電極との積層方向と直交する方向に前記第１の電極と前記第２の電極との対向し合う部分をみたときに、前記第１の電極と前記第２の電極との対向し合う部分に、前記接続部中のはんだ部の７０％以上が配置されている接続構造体を得る、請求項１２〜１５のいずれか１項に記載の接続構造体の製造方法。 When the portion where the first electrode and the second electrode face each other in the direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode is seen, 16. The connection structure according to claim 12, wherein a connection structure in which 70% or more of the solder portion in the connection portion is disposed in a portion where the electrode and the second electrode face each other is obtained. A manufacturing method of a connection structure.