JP2016092153A5 - - Google Patents

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JP2016092153A5
JP2016092153A5 JP2014223678A JP2014223678A JP2016092153A5 JP 2016092153 A5 JP2016092153 A5 JP 2016092153A5 JP 2014223678 A JP2014223678 A JP 2014223678A JP 2014223678 A JP2014223678 A JP 2014223678A JP 2016092153 A5 JP2016092153 A5 JP 2016092153A5
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plating layer
lead frame
silver
forming
thickness
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また、例えば、下地層50をニッケルめっき層、パラジウムめっき層、金めっき層を下層から積層させた積層膜とする場合には、まずリードフレーム材10をニッケルめっき浴に浸漬させて電気めっき処理を行い、次いで、パラジウムめっき浴にニッケルめっき層が形成されたリードフレーム材10を浸漬させて電気めっき処理を行い、パラジウムめっき層上にパラジウムめっき層を形成する。更に、金めっき浴にニッケルめっき層及びパラジウムめっき層が表面に積層形成されたリードフレーム材10を金めっき浴に浸漬させ。電気めっき処理を行うことにより、積層膜の下地層50を形成することができる。なお、各層の厚さについては、例えば、ニッケルめっき層を0.5〜4.0μm、パラジウムめっき層を0.005〜0.1μm、金めっき層を0.001〜0.02μmの範囲で形成してもよい。
Further, for example, when the underlayer 50 is a laminated film in which a nickel plating layer, a palladium plating layer, and a gold plating layer are laminated from the lower layer, the lead frame material 10 is first immersed in a nickel plating bath and subjected to electroplating treatment. Next, the lead frame material 10 on which the nickel plating layer is formed is immersed in a palladium plating bath and electroplating is performed to form a palladium plating layer on the palladium plating layer. Further, the lead frame material 10 having a nickel plating layer and a palladium plating layer laminated on the surface of the gold plating bath is immersed in the gold plating bath. By performing the electroplating process, the underlayer 50 of the laminated film can be formed. The thickness of each layer is, for example, in the range of 0.5 to 4.0 μm for the nickel plating layer, 0.005 to 0.1 μm for the palladium plating layer, and 0.001 to 0.02 μm for the gold plating layer. It may be formed.

Claims (24)

金属材料から構成され、光学素子を搭載する素子搭載領域と、前記光学素子とワイヤボンディングを行うボンディング領域とを有するリードフレームであって、
少なくとも前記素子搭載領域上に、光沢性を有し、表面にアルカリ処理が施された銀めっき層又は銀を含有する銀合金めっき層が形成されたリードフレーム。
A lead frame made of a metal material and having an element mounting area for mounting an optical element and a bonding area for wire bonding with the optical element,
A lead frame in which a silver plating layer or a silver alloy plating layer containing silver is formed on at least the element mounting region and having a glossiness and a surface subjected to alkali treatment.
前記銀めっき層又は前記銀合金めっき層は、1.5μm以上の厚さを有する請求項1に記載のリードフレーム。   The lead frame according to claim 1, wherein the silver plating layer or the silver alloy plating layer has a thickness of 1.5 μm or more. 前記銀めっき層又は前記銀合金めっき層は、1.50以上の光沢度を有する請求項1又は2に記載のリードフレーム。   The lead frame according to claim 1, wherein the silver plating layer or the silver alloy plating layer has a glossiness of 1.50 or more. 前記銀めっき層又は前記合金めっき層の下地層として、銅めっき層が形成された請求項1乃至3のいずれか一項に記載のリードフレーム。 The lead frame according to any one of claims 1 to 3, wherein a copper plating layer is formed as a base layer of the silver plating layer or the silver alloy plating layer. 前記銅めっき層は0.1〜2.0μmの厚さを有する請求項4に記載のリードフレーム。   The lead frame according to claim 4, wherein the copper plating layer has a thickness of 0.1 to 2.0 μm. 前記銀めっき層又は前記合金めっき層の下地層として、ニッケルめっき層、パラジウムめっき層、金めっき層が下層から順に積層された積層層が形成された請求項1乃至3のいずれか一項に記載のリードフレーム。 The laminated layer in which the nickel plating layer, the palladium plating layer, and the gold plating layer are laminated in order from the lower layer is formed as an underlayer of the silver plating layer or the silver alloy plating layer. The described lead frame. 前記ニッケルめっき層は0.5〜4.0μm、前記パラジウムめっき層は0.005〜0.1μm、前記金めっき層は0.001〜0.02μmの厚さを有する請求項6に記載のリードフレーム。 The nickel plating layer has a thickness of 0.5 to 4.0 μm, the palladium plating layer has a thickness of 0.005 to 0.1 μm, and the gold plating layer has a thickness of 0.001 to 0.02 μm. Lead frame. 前記金属材料は、銅材又は銅を含む銅合金材からなる請求項1乃至7のいずれか一項に記載のリードフレーム。   The lead frame according to claim 1, wherein the metal material is made of a copper material or a copper alloy material containing copper. 前記ボンディング領域上に、光沢性を有し、表面に前記アルカリ処理が施された前記銀めっき層又は前記銀合金めっき層が形成された請求項1乃至8のいずれか一項に記載されたリードフレーム。   The lead according to any one of claims 1 to 8, wherein the silver plating layer or the silver alloy plating layer having glossiness and having the alkali treatment applied thereon is formed on the bonding region. flame. 前記アルカリ処理は、pH11以上のアルカリ溶液を用いて施された請求項1乃至9のいずれか一項に記載のリードフレーム。   The lead frame according to any one of claims 1 to 9, wherein the alkali treatment is performed using an alkali solution having a pH of 11 or more. 前記アルカリ処理は、苛性カリウム溶液又は苛性ナトリウム溶液を用いて施された請求項10に記載のリードフレーム。   The lead frame according to claim 10, wherein the alkali treatment is performed using a caustic potassium solution or a caustic sodium solution. 金属材料をリードフレーム状に成形したリードフレーム材の表面に銀めっきを施して光沢性の銀めっき層を形成する工程と、
該銀めっき層が形成された前記リードフレーム材をアルカリ溶液に浸漬してアルカリ処理を施す工程と、
該アルカリ処理が施された前記リードフレーム材を加熱処理する工程と、を有するリードフレームの製造方法。
Forming a glossy silver plating layer by applying silver plating to the surface of the lead frame material formed of a metal material into a lead frame; and
Immersing the lead frame material on which the silver plating layer is formed in an alkaline solution to perform an alkali treatment;
And a step of heat-treating the lead frame material subjected to the alkali treatment.
前記アルカリ溶液は、pHが11以上である請求項12に記載のリードフレームの製造方法。   The lead frame manufacturing method according to claim 12, wherein the alkaline solution has a pH of 11 or more. 前記アルカリ溶液は、苛性カリウム溶液又は苛性ナトリウム溶液である請求項13に記載のリードフレームの製造方法。   The lead frame manufacturing method according to claim 13, wherein the alkaline solution is a caustic potassium solution or a caustic sodium solution. 前記銀めっき層を形成する工程で、前記銀めっき層は1.5μm以上の厚さに形成される請求項12乃至14のいずれか一項に記載のリードフレームの製造方法。   The lead frame manufacturing method according to claim 12, wherein in the step of forming the silver plating layer, the silver plating layer is formed to a thickness of 1.5 μm or more. 前記銀めっき層を形成する工程は、青化銀又は青化カリウムからなるストライク銀めっき浴を用いて行われる請求項12乃至15のいずれか一項に記載のリードフレームの製造方法。   The lead frame manufacturing method according to any one of claims 12 to 15, wherein the step of forming the silver plating layer is performed using a strike silver plating bath made of silver bromide or potassium bromide. 前記リードフレーム材を加熱処理する工程は、150℃以上の温度で1時間半以上行われる請求項12乃至16のいずれか一項に記載のリードフレームの製造方法。   The method for manufacturing a lead frame according to any one of claims 12 to 16, wherein the step of heat-treating the lead frame material is performed at a temperature of 150 ° C or higher for one and a half hours. 前記銀めっき層を形成する工程終了後の前記銀めっき層の第1の光沢度は1.70以上であり、
前記リードフレーム材を加熱処理する工程終了後の前記銀めっき層の第2の光沢度は、前記第1の光沢度の90%以上を維持する請求項12乃至17のいずれか一項に記載のリードフレームの製造方法。
The first glossiness of the silver plating layer after completion of the step of forming the silver plating layer is 1.70 or more,
18. The second glossiness of the silver plating layer after the completion of the step of heat-treating the lead frame material is maintained at 90% or more of the first glossiness. Lead frame manufacturing method.
前記銀めっき層を形成する工程の前に、前記リードフレーム材の表面に下地めっき層を形成する工程を更に有する請求項12乃至18のいずれか一項に記載されたリードフレームの製造方法。   The lead frame manufacturing method according to any one of claims 12 to 18, further comprising a step of forming a base plating layer on a surface of the lead frame material before the step of forming the silver plating layer. 前記下地めっき層は、銅めっき層である請求項19に記載のリードフレームの製造方法。   The lead frame manufacturing method according to claim 19, wherein the base plating layer is a copper plating layer. 前記下地めっき層を形成する工程は、前記銅めっき層を0.1〜2.0μmの厚さに形成する工程である請求項20に記載のリードフレームの製造方法。   21. The lead frame manufacturing method according to claim 20, wherein the step of forming the base plating layer is a step of forming the copper plating layer to a thickness of 0.1 to 2.0 [mu] m. 前記下地めっき層を形成する工程は、前記リードフレーム材の表面にニッケルめっき層を形成する工程と、該ニッケルめっき層上にパラジウムめっき層を形成する工程と、該パラジウムめっき層上に金めっき層を形成する工程とを含む請求項19に記載のリードフレームの製造方法。   The step of forming the base plating layer includes a step of forming a nickel plating layer on the surface of the lead frame material, a step of forming a palladium plating layer on the nickel plating layer, and a gold plating layer on the palladium plating layer. The method of manufacturing a lead frame according to claim 19, further comprising: 前記ニッケルめっき層を形成する工程は、前記ニッケルめっき層を0.5〜4.0μmの厚さで形成する工程、前記パラジウムめっき層を形成する工程は、前記パラジウムめっき層を0.005〜0.1μmの厚さで形成する工程、前記金めっき層を形成する工程は、前記金めっき層を0.001〜0.02μmの厚さで形成する工程である請求項22に記載のリードフレームの製造方法。   The step of forming the nickel plating layer is a step of forming the nickel plating layer with a thickness of 0.5 to 4.0 μm, and the step of forming the palladium plating layer is 0.005 to 0 of the palladium plating layer. 23. The lead frame according to claim 22, wherein the step of forming a thickness of 1 μm and the step of forming the gold plating layer are steps of forming the gold plating layer with a thickness of 0.001 to 0.02 μm. Production method. 前記下地めっき層を形成する工程の前に、アルカリ及び酸によって前記リードフレーム材の表面に前処理を施す工程を更に有する請求項19乃至23のいずれか一項に記載のリードフレームの製造方法。   The method for manufacturing a lead frame according to any one of claims 19 to 23, further comprising a step of pre-treating the surface of the lead frame material with an alkali and an acid before the step of forming the base plating layer.
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JP2017005224A (en) * 2015-06-16 2017-01-05 Shマテリアル株式会社 Lead frame for optical element and manufacturing method therefor
JP7148792B2 (en) * 2018-09-27 2022-10-06 日亜化学工業株式会社 METAL MATERIAL FOR OPTO-SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND OPTO-SEMICONDUCTOR DEVICE USING THE SAME
JP6736643B2 (en) * 2018-11-28 2020-08-05 日亜化学工業株式会社 Multi-row lead frame, multi-row LED lead frame, manufacturing method thereof, and LED package manufacturing method

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09181241A (en) * 1995-12-21 1997-07-11 Hitachi Cable Ltd Method for treating surface of lead frame
JP4367457B2 (en) * 2006-07-06 2009-11-18 パナソニック電工株式会社 Silver film, silver film manufacturing method, LED mounting substrate, and LED mounting substrate manufacturing method
JP2008091818A (en) * 2006-10-05 2008-04-17 Matsushita Electric Ind Co Ltd Lead frame for optical semiconductor device, optical semiconductor device using it, and these manufacturing methods
JP4758976B2 (en) * 2007-12-03 2011-08-31 日立ケーブルプレシジョン株式会社 Lead frame for mounting semiconductor light emitting device, method for manufacturing the same, and light emitting device
JP5636184B2 (en) * 2009-11-19 2014-12-03 日立マクセル株式会社 Semiconductor device, substrate for semiconductor device, and manufacturing method thereof
CN102471895B (en) * 2010-05-20 2013-12-18 Jx金属商事株式会社 Electrolytically silver plated and/or electrolytically silver alloy plated article having oxide layer on surface
JP5618189B2 (en) * 2010-07-30 2014-11-05 大日本印刷株式会社 Lead frame with resin and manufacturing method thereof, and semiconductor device and manufacturing method thereof
JP2012089830A (en) * 2010-09-21 2012-05-10 Nichia Chem Ind Ltd Light emitting device
JP6015231B2 (en) * 2011-08-26 2016-10-26 大日本印刷株式会社 LED element mounting substrate, method for manufacturing the same, and semiconductor device using the LED element mounting substrate
US9793456B2 (en) * 2011-09-30 2017-10-17 Kaneka Corporation Molded resin body for surface-mounted light-emitting device, manufacturing method thereof, and surface-mounted light-emitting device
JP2013174865A (en) * 2012-01-25 2013-09-05 Jx Nippon Mining & Metals Corp Lamination structure having indium-silver alloy layer on copper or copper alloy layer, and manufacturing method thereof
JP5998621B2 (en) * 2012-05-10 2016-09-28 大日本印刷株式会社 LED lead frame and semiconductor device using the LED lead frame
JP6230778B2 (en) * 2012-05-31 2017-11-15 日亜化学工業株式会社 Electrolytic silver plating solution for optical semiconductor devices
US9590155B2 (en) * 2012-06-06 2017-03-07 Cree, Inc. Light emitting devices and substrates with improved plating
CN103806058A (en) * 2012-11-08 2014-05-21 无锡新三洲特钢有限公司 Method for electroplating LED pin with high-gloss silver coating
JP6175822B2 (en) * 2013-03-15 2017-08-09 日亜化学工業株式会社 Lead frame or substrate for optical semiconductor devices
JP2014197605A (en) * 2013-03-29 2014-10-16 日立化成株式会社 Method for manufacturing led mounting substrate

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