JP2016092063A - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- JP2016092063A JP2016092063A JP2014221341A JP2014221341A JP2016092063A JP 2016092063 A JP2016092063 A JP 2016092063A JP 2014221341 A JP2014221341 A JP 2014221341A JP 2014221341 A JP2014221341 A JP 2014221341A JP 2016092063 A JP2016092063 A JP 2016092063A
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- Prior art keywords
- solder
- semiconductor element
- base material
- semiconductor device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 106
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910000679 solder Inorganic materials 0.000 claims abstract description 138
- 239000000463 material Substances 0.000 claims abstract description 132
- 239000010949 copper Substances 0.000 claims abstract description 130
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052802 copper Inorganic materials 0.000 claims abstract description 24
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000470 constituent Substances 0.000 claims abstract description 7
- 238000005304 joining Methods 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 description 48
- 229910052751 metal Inorganic materials 0.000 description 48
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 description 37
- 125000006850 spacer group Chemical group 0.000 description 17
- 229910020888 Sn-Cu Inorganic materials 0.000 description 13
- 229910019204 Sn—Cu Inorganic materials 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 10
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- 229910052718 tin Inorganic materials 0.000 description 10
- 239000012071 phase Substances 0.000 description 8
- 239000007791 liquid phase Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H—ELECTRICITY
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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Abstract
【解決手段】半導体装置は、半導体素子と、半導体素子に接合されている被接合部材2と、被接合部材を接合している接合層4を備えている。被接合部材にはニッケル層2aが設けられている。接合層4は、半導体素子の電極とニッケル層2aを接合している。接合層4は、はんだ部4aと、Cu6Sn5部4bを備えている。はんだ部4aは、母材の構成元素に少なくもすずを含んでおり、母材の内部に単体の銅20を有している。Cu6Sn5部4bは、ニッケル層2aに接している。接合層4に含まれる銅元素の割合は、2.0wt%以上である。
【選択図】図2
Description
2a:ニッケル層
4:接合層
4a:はんだ部
4b:Cu6Sn5部
6:半導体素子
100:半導体装置
Claims (5)
- 半導体素子と、半導体素子に接合されているとともにニッケル層が設けられている被接合部材と、前記被接合部材を接合している接合層と、を備えており、
前記接合層が、
母材の構成元素に少なくもすずが含まれているとともに前記母材の内部に単体の銅を有するはんだ部と、
前記ニッケル層に接しているCu6Sn5部と、
を備えており、
前記接合層に含まれている銅元素の割合が、2.0wt%以上である半導体装置。 - 前記接合層に含まれている前記銅元素の割合が、7.6wt%以下である請求項1に記載の半導体装置。
- 前記母材は、すずと銅を主成分とした合金である請求項1又は2に記載の半導体装置。
- 前記母材は、Sn0.7Cuが主成分とした合金である請求項3に記載の半導体装置。
- 半導体素子とニッケル層が設けられている被接合部材とを、はんだ材料によって接合する工程を有し、
前記はんだ材料の母材の構成元素に少なくもすずが含まれており、
前記はんだ材料が、前記母材の内部に単体の銅を有しており、
前記はんだ材料に含まれる銅元素の割合が、2.0wt%以上である半導体装置の製造方法。
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CN201510708562.6A CN105575928B (zh) | 2014-10-30 | 2015-10-27 | 半导体装置和制造半导体装置的方法 |
KR1020150149160A KR102004577B1 (ko) | 2014-10-30 | 2015-10-27 | 반도체 장치와 반도체 장치의 제조 방법 |
US14/924,194 US9824994B2 (en) | 2014-10-30 | 2015-10-27 | Semiconductor device in which an electrode of a semiconductor element is joined to a joined member and methods of manufacturing the semiconductor device |
EP15191893.5A EP3021355A1 (en) | 2014-10-30 | 2015-10-28 | Method of joining a semiconductor element to a joined member using a tin-containing solder material with copper particles dispersed therein and corresponding semiconductor device |
TW104135422A TWI611536B (zh) | 2014-10-30 | 2015-10-28 | 半導體裝置及半導體裝置的製造方法 |
BR102015027628-1A BR102015027628B1 (pt) | 2014-10-30 | 2015-10-30 | Dispositivo semicondutor e método de fabricação de dispositivo semicondutor |
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US9824994B2 (en) | 2014-10-30 | 2017-11-21 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device in which an electrode of a semiconductor element is joined to a joined member and methods of manufacturing the semiconductor device |
JP2018085360A (ja) * | 2016-11-21 | 2018-05-31 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
US10312211B2 (en) | 2015-11-16 | 2019-06-04 | Toyota Jidosha Kabushiki Kaisha | Method of manufacturing semiconductor device |
WO2021250947A1 (ja) * | 2020-06-08 | 2021-12-16 | 日立Astemo株式会社 | 半導体装置、および半導体装置の製造方法 |
WO2022244395A1 (ja) * | 2021-05-18 | 2022-11-24 | 富士電機株式会社 | 半導体装置 |
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