JP2016076619A - Manufacturing method of substrate for electronic module, and substrate for electronic module - Google Patents

Manufacturing method of substrate for electronic module, and substrate for electronic module Download PDF

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JP2016076619A
JP2016076619A JP2014206593A JP2014206593A JP2016076619A JP 2016076619 A JP2016076619 A JP 2016076619A JP 2014206593 A JP2014206593 A JP 2014206593A JP 2014206593 A JP2014206593 A JP 2014206593A JP 2016076619 A JP2016076619 A JP 2016076619A
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JP6422294B2 (en
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南　和彦
Kazuhiko Minami
和彦 南
平野　智哉
Tomoya Hirano
智哉 平野
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Resonac Holdings Corp
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Showa Denko KK
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Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a substrate for an electronic module, the substrate having a top surface good in solder wettability.SOLUTION: A substrate 10 includes a plurality of members integrated in a laminated manner, and includes, as the plurality of members, at least, a Ni plate 1 formed of Ni or a Ni alloy and having a top surface 1a to which an electronic element is joined by soldering, a metal circuit board 4, and an insulating plate 6. Among the plurality of members, at least two members adjacent to each other are joined by brazing, and then an oxide film formed on the top surface 1a of the Ni plate 1 during brazing is removed by a hydrogen reduction method.SELECTED DRAWING: Figure 2

Description

本発明は、電子素子が搭載される電子モジュール用基板の製造方法、電子モジュール用基板、電子モジュールの製造方法、及び電子モジュールに関する。   The present invention relates to an electronic module substrate manufacturing method on which electronic elements are mounted, an electronic module substrate, an electronic module manufacturing method, and an electronic module.

なお、本発明に係る電子モジュール用基板の上下方向は限定されるものではないが、本明細書及び特許請求の範囲では、基板の構成を理解し易くするため、基板における電子素子がはんだ付けにより接合される面側を上面側、その反対側を下面側と定義する。   Although the vertical direction of the electronic module substrate according to the present invention is not limited, in the present specification and claims, in order to facilitate understanding of the configuration of the substrate, the electronic elements on the substrate are soldered. The surface side to be joined is defined as the upper surface side, and the opposite side is defined as the lower surface side.

さらに本明細書及び特許請求の範囲では、「板」の語は、特に明示する場合を除き「箔」も含む意味で用いられる。   Further, in the present specification and claims, the term “plate” is used to include “foil” unless otherwise specified.

発熱性の半導体素子等の電子素子が搭載される電子モジュール用基板は、積層状に一体化された複数の部材を具備している。複数の部材は、電子回路が形成される金属回路板、電気絶縁性を有する絶縁板、電子素子を冷却する冷却部材（放熱部材を含む）などを含んでいる。そして、金属回路板と絶縁板は互いに重ね合わされて所定の接合手段（例：ろう付け、拡散接合）により接合一体化されている。さらに、絶縁板と冷却部材とは所定の接合手段（例：はんだ付け、ろう付け、拡散接合）により接合一体化されている（例えば、特許文献１参照）。   An electronic module substrate on which an electronic element such as a heat-generating semiconductor element is mounted includes a plurality of members integrated in a laminated form. The plurality of members include a metal circuit board on which an electronic circuit is formed, an insulating board having electrical insulation, a cooling member (including a heat dissipation member) for cooling the electronic element, and the like. The metal circuit board and the insulating board are overlapped with each other and joined and integrated by a predetermined joining means (for example, brazing or diffusion joining). Furthermore, the insulating plate and the cooling member are joined and integrated by a predetermined joining means (eg, soldering, brazing, diffusion bonding) (for example, see Patent Document 1).

金属回路板の上面には電子素子がはんだ付けにより接合される。そこで、金属回路板の上面が良好なはんだ付け性を有するようにするため、基板の製造後に金属回路板上にＮｉＰめっき等のＮｉめっき層を形成することが行われている。   An electronic element is joined to the upper surface of the metal circuit board by soldering. Therefore, in order to make the upper surface of the metal circuit board have good solderability, an Ni plating layer such as NiP plating is formed on the metal circuit board after manufacturing the substrate.

しかしながら、上述の方法では、金属回路板の上面だけではなく基板全体にＮｉめっき層が形成され、更に、Ｎｉめっき処理はその工程が複雑であるため、製造コストが高く付いていた。しかも、Ｎｉめっき層中に有機物等の不純物が存在する可能性があるので、不純物の影響によりはんだ付け強度が低下する虞があった。その上、Ｎｉめっき層がＮｉＰめっき層である場合には、Ｎｉめっき層中にＰが存在しているため、長期的な保管時にはんだ濡れ性が悪化する虞があった。   However, in the above-described method, the Ni plating layer is formed not only on the upper surface of the metal circuit board but also on the entire substrate, and furthermore, the Ni plating process is complicated in its process, resulting in high manufacturing costs. In addition, since there is a possibility that impurities such as organic substances are present in the Ni plating layer, there is a possibility that the soldering strength may be reduced due to the influence of the impurities. In addition, when the Ni plating layer is a NiP plating layer, P is present in the Ni plating layer, so that solder wettability may deteriorate during long-term storage.

そこで近年、金属回路板の上面にＮｉ又はＮｉ合金で形成されたＮｉ板を接合する方法が提案されている（例えば、特許文献２〜１４参照）。   Therefore, in recent years, a method for joining a Ni plate formed of Ni or Ni alloy to the upper surface of a metal circuit plate has been proposed (see, for example, Patent Documents 2 to 14).

特開２００４−１５３０７５号公報JP 2004-153075 A 特開２０１１−１８３７９７号公報JP 2011-183797 A 特開２０１２−４５３４号公報JP 2012-4534 A 特開２０１２−１０４５３９号公報JP 2012-104539 A 特開２０１１−２２７３５６号公報JP 2011-227356 A 特開２０１２−２４００６６号公報JP 2012-240066 A 特開２０１２−２４８６９７号公報JP 2012-248697 A 特開２０１３−２１９１３４号公報JP 2013-219134 A 特開２０１３−２２２７５８号公報JP 2013-222758 A 特開２０１３−２２２９０９号公報JP 2013-222909 A 特開２０１３−２３５９３６号公報JP 2013-235936 A 特開２０１４−５０８４７号公報JP 2014-50847 A 特開２０１４−１６０７６３号公報JP 2014-160763 A 特開２０１４−１６０７６４号公報Japanese Patent Application Laid-Open No. 2014-160764

しかしながら、上述の方法では、基板を構成する複数の部材のうち少なくとも互いに重なり合う二つの部材をろう付けにより接合一体化する時にＮｉ板の上面に酸化膜が形成され易い。酸化膜が形成されるとＮｉ板の上面のはんだ濡れ性が低下するため、ろう付け後に酸化膜を除去する必要がある。その除去方法として湿式バフ研磨が考えられる。しかし、この方法の場合、研磨時に水分がＮｉ板の上面に吸着し、はんだ濡れ性が低下する虞がある。   However, in the above-described method, an oxide film is easily formed on the upper surface of the Ni plate when at least two members that overlap each other among the plurality of members constituting the substrate are joined and integrated by brazing. When the oxide film is formed, the solder wettability of the upper surface of the Ni plate is lowered, so that it is necessary to remove the oxide film after brazing. Wet buffing can be considered as the removal method. However, in this method, moisture is adsorbed on the upper surface of the Ni plate during polishing, and solder wettability may be reduced.

本発明は、上述した技術背景に鑑みてなされたもので、その目的は、はんだ濡れ性が良好な上面を有する電子モジュール用基板の製造方法、電子モジュール用基板、電子モジュールの製造方法、及び、電子モジュールを提供することにある。   The present invention has been made in view of the above-described technical background, and the object thereof is a method for manufacturing an electronic module substrate having an upper surface with good solder wettability, an electronic module substrate, an electronic module manufacturing method, and To provide an electronic module.

本発明は以下の手段を提供する。   The present invention provides the following means.

［１］ 積層状に一体化された複数の部材を具備し、
前記複数の部材として、電子素子がはんだ付けにより接合される上面を有するＮｉ又はＮｉ合金で形成されたＮｉ板と、金属回路板と、絶縁板とを少なくとも含む、電子モジュール用基板の製造方法であって、
複数の部材のうち少なくとも互いに重なり合う二つの部材をろう付けにより接合することと、
前記ろう付け時に前記Ｎｉ板の上面に形成された酸化膜を、水素還元法により除去することを含む、電子モジュール用基板の製造方法。 [1] comprising a plurality of members integrated in a laminated form;
In the method for manufacturing a substrate for an electronic module, the plurality of members include at least a Ni plate formed of Ni or Ni alloy having an upper surface to which an electronic element is joined by soldering, a metal circuit plate, and an insulating plate. There,
Joining at least two members that overlap each other among a plurality of members by brazing;
The manufacturing method of the board | substrate for electronic modules including removing the oxide film formed on the upper surface of the said Ni board by the hydrogen reduction method at the time of the said brazing.

［２］ 前記Ｎｉ板は圧延材からなる前項１記載の電子モジュール用基板の製造方法。   [2] The method for manufacturing an electronic module substrate as recited in the aforementioned Item 1, wherein the Ni plate is made of a rolled material.

［３］ 前記複数の部材として、更に、金属緩衝板と冷却部材とを含んでいる前項１又は２記載の電子モジュール用基板の製造方法。   [3] The method for manufacturing an electronic module substrate as recited in the aforementioned Item 1 or 2, further comprising a metal buffer plate and a cooling member as the plurality of members.

［４］ 前記金属回路板は、前記Ｎｉ板とは異種の金属板を少なくとも一枚含んでおり、
前記Ｎｉ板と前記金属回路板は、前記二つの部材をろう付けにより接合する前に、拡散接合により互いに積層状に接合一体化されたものである前項１〜３のいずれかに記載の電子モジュール用基板の製造方法。 [4] The metal circuit plate includes at least one metal plate different from the Ni plate,
The electronic module according to any one of the preceding items 1 to 3, wherein the Ni plate and the metal circuit board are joined and integrated with each other in a laminated form by diffusion bonding before the two members are joined by brazing. Manufacturing method for industrial use.

［５］ 前項１〜４のいずれに記載の電子モジュール用基板の製造方法により製造された電子モジュール用基板。   [5] An electronic module substrate manufactured by the electronic module substrate manufacturing method according to any one of 1 to 4 above.

［６］ 積層状に一体化された複数の部材を具備し、
前記複数の部材として、電子素子がはんだ付けにより接合される上面を有するＮｉ又はＮｉ合金で形成されたＮｉ板と、金属回路板と、絶縁板とを少なくとも含む、電子モジュール用基板であって、
複数の部材のうち少なくとも互いに重なり合う二つの部材がろう付けにより接合されており、
ろう付け時にＮｉ板の上面に形成された酸化膜が、水素還元法により除去されている、電子モジュール用基板。 [6] comprising a plurality of members integrated in a laminated form;
An electronic module substrate comprising, as the plurality of members, at least a Ni plate formed of Ni or Ni alloy having an upper surface to which an electronic element is joined by soldering, a metal circuit plate, and an insulating plate,
Two members at least overlapping each other among the plurality of members are joined by brazing,
An electronic module substrate in which an oxide film formed on an upper surface of a Ni plate during brazing is removed by a hydrogen reduction method.

［７］ 前記Ｎｉ板は圧延材からなる前項６記載の電子モジュール用基板。   [7] The electronic module substrate as recited in the aforementioned Item 6, wherein the Ni plate is made of a rolled material.

［８］ 前記複数の部材として、更に、金属緩衝板と冷却部材とを含んでいる前項６又は７記載の電子モジュール用基板。   [8] The electronic module substrate as set forth in [6] or [7], further including a metal buffer plate and a cooling member as the plurality of members.

［９］ 前記金属回路板は、前記Ｎｉ板とは異種の金属板を少なくとも一枚含んでおり、
前記Ｎｉ板と前記金属回路板は、拡散接合により互いに接合一体化されている前項６〜８のいずれかに記載の電子モジュール用基板。 [9] The metal circuit board includes at least one metal plate different from the Ni plate,
9. The electronic module substrate according to any one of items 6 to 8, wherein the Ni plate and the metal circuit plate are joined and integrated with each other by diffusion bonding.

［１０］ 前項５〜９のいずれかに記載の電子モジュール用基板におけるＮｉ板の上面に、電子素子をはんだ付けにより接合する電子モジュールの製造方法。   [10] An electronic module manufacturing method in which an electronic element is joined to the upper surface of the Ni plate of the electronic module substrate according to any one of 5 to 9 by soldering.

［１１］ 前項５〜９のいずれかに記載の電子モジュール用基板におけるＮｉ板の上面に、電子素子がはんだ付けにより接合されている電子モジュール。   [11] An electronic module in which an electronic element is joined to the upper surface of the Ni plate of the electronic module substrate according to any one of 5 to 9 by soldering.

本発明は以下の効果を奏する。   The present invention has the following effects.

前項［１］では、Ｎｉ板の上面に形成された酸化膜を水素還元法により除去することにより、Ｎｉ板の上面において酸化膜により低下したはんだ濡れ性を回復することができる。さらに、水素還元法によれば水を用いないで酸化膜を除去できるので、水分がＮｉ板の上面に吸着することによるはんだ濡れ性の低下問題も回避することができる。したがって、はんだ濡れ性が良好な上面を有する基板を得ることができる。   In the preceding item [1], by removing the oxide film formed on the upper surface of the Ni plate by the hydrogen reduction method, the solder wettability reduced by the oxide film on the upper surface of the Ni plate can be recovered. Furthermore, since the oxide film can be removed without using water according to the hydrogen reduction method, it is possible to avoid the problem of lowering the solder wettability due to moisture adsorbed on the upper surface of the Ni plate. Therefore, a substrate having an upper surface with good solder wettability can be obtained.

前項［２］では、Ｎｉ板が圧延材からなるものなので、Ｎｉ板の上面はＮｉめっき層の上面よりも平坦であり、はんだ濡れ性が良好である。しかも、Ｎｉ板の平坦な上面には酸化膜も平坦に形成されるから、酸化膜を水素還元法により除去し易い。したがって、酸化膜を容易に除去することができるし酸化膜の除去率を向上させることができる。   In the preceding item [2], since the Ni plate is made of a rolled material, the upper surface of the Ni plate is flatter than the upper surface of the Ni plating layer, and the solder wettability is good. Moreover, since the oxide film is also formed flat on the flat upper surface of the Ni plate, the oxide film can be easily removed by the hydrogen reduction method. Therefore, the oxide film can be easily removed and the removal rate of the oxide film can be improved.

前項［３］では、更に、金属緩衝板と冷却部材とを備えた基板を製造する場合であっても、前項［１］又は［２］の効果を奏し得る。   In the previous item [3], even when a substrate including a metal buffer plate and a cooling member is manufactured, the effect of the previous item [1] or [2] can be obtained.

前項［４］では、金属回路板を構成する金属板の枚数、材質、厚さ等を様々に変更することにより、金属回路板の性能の向上を図ることができる。   In the above item [4], the performance of the metal circuit board can be improved by variously changing the number, material, thickness, and the like of the metal board constituting the metal circuit board.

前項［５］では、はんだ濡れ性が良好な上面を有する基板を提供できる。   In the preceding item [5], a substrate having an upper surface with good solder wettability can be provided.

前項［６］〜［９］では、それぞれ前項［１］〜［４］の効果と同様の効果を奏し得る。   In the preceding items [6] to [9], the same effects as those of the preceding items [1] to [4] can be obtained.

前項［１０］及び［１１］では、基板におけるＮｉ板の上面に電子素子がはんだ付けにより良好に接合された電子モジュールを提供できる。   In the previous items [10] and [11], it is possible to provide an electronic module in which an electronic element is satisfactorily bonded to the upper surface of the Ni plate in the substrate by soldering.

図１は、本発明の一実施形態に係る電子モジュール用基板の概略断面図である。FIG. 1 is a schematic cross-sectional view of an electronic module substrate according to an embodiment of the present invention. 図２は、同基板を製造途中の状態で示す断面図である。FIG. 2 is a cross-sectional view showing the substrate in the course of manufacturing. 図３は、同基板をそのＮｉ板の上面に酸化膜が形成された状態で示す断面図である。FIG. 3 is a cross-sectional view showing the same substrate with an oxide film formed on the upper surface of the Ni plate.

次に、本発明の一実施形態について図面を参照して以下に説明する。   Next, an embodiment of the present invention will be described below with reference to the drawings.

図１に示すように、本発明の一実施形態に係る電子モジュール用基板１０は、発熱性の半導体素子等の電子素子（二点鎖線で示す）１１が搭載されるものであり、例えば、パワーモジュール用基板等の半導体モジュール用基板である。   As shown in FIG. 1, an electronic module substrate 10 according to an embodiment of the present invention is mounted with an electronic element (indicated by a two-dot chain line) 11 such as a heat-generating semiconductor element. A semiconductor module substrate such as a module substrate.

基板１０は、積層状に一体化された複数の部材から構成されており、図２に示すように、複数の部材として、Ｎｉ板１、金属回路板４、絶縁板６、金属緩衝板７、冷却部材８などを含んでいる。金属回路板４はＮｉ板１の下側に配置されており、絶縁板６は金属回路板４の下側に配置されており、金属緩衝板７は絶縁板６の下側に配置されており、冷却部材８は金属緩衝板７の下側に配置されている。   The substrate 10 is composed of a plurality of members integrated in a laminated form, and as shown in FIG. 2, the Ni plate 1, the metal circuit plate 4, the insulating plate 6, the metal buffer plate 7, The cooling member 8 and the like are included. The metal circuit board 4 is arranged on the lower side of the Ni plate 1, the insulating board 6 is arranged on the lower side of the metal circuit board 4, and the metal buffer board 7 is arranged on the lower side of the insulating board 6. The cooling member 8 is disposed below the metal buffer plate 7.

Ｎｉ板１は、Ｎｉ又はＮｉ合金で形成された圧延材からなるものである。Ｎｉ板１の上面１ａは電子素子１１が搭載される素子搭載面に対応している。すなわち、電子素子１１はＮｉ板１の上面１ａにはんだ付けにより接合される。本実施形態では、Ｎｉ板１は例えば純Ｎｉ板である。   The Ni plate 1 is made of a rolled material formed of Ni or Ni alloy. The upper surface 1a of the Ni plate 1 corresponds to the element mounting surface on which the electronic element 11 is mounted. That is, the electronic element 11 is joined to the upper surface 1a of the Ni plate 1 by soldering. In the present embodiment, the Ni plate 1 is, for example, a pure Ni plate.

金属回路板４は、Ｎｉ板１とは異なる種類の金属板を少なくとも一枚含むものであり、本実施形態では、Ｔｉ板２とＡｌ板３を含んでいる。そして、Ｎｉ板１と金属回路板４、即ちＮｉ板１とＴｉ板２とＡｌ板３とは、拡散接合（例：クラッド圧延、放電プラズマ焼結法）により積層状に接合一体化されており、これにより、Ｎｉ板１と金属回路板４（Ｔｉ板２とＡｌ板３）とを一体に備えた積層板５が形成されている。さらに、金属回路板４の下面、即ちＡｌ板３の下面には絶縁板６と接合するためのろう材層９ａが形成されている。ろう材層９ａは例えばＡｌ系ろう材（例：Ａｌ−Ｓｉ系、Ａｌ−Ｓｉ−Ｍｇ系ろう材）の層である。   The metal circuit plate 4 includes at least one metal plate of a type different from the Ni plate 1. In the present embodiment, the metal circuit plate 4 includes a Ti plate 2 and an Al plate 3. The Ni plate 1 and the metal circuit plate 4, that is, the Ni plate 1, the Ti plate 2, and the Al plate 3 are joined and integrated in a laminated form by diffusion bonding (eg, clad rolling, discharge plasma sintering method). As a result, the laminated plate 5 is integrally provided with the Ni plate 1 and the metal circuit plate 4 (Ti plate 2 and Al plate 3). Further, a brazing material layer 9 a for bonding to the insulating plate 6 is formed on the lower surface of the metal circuit plate 4, that is, the lower surface of the Al plate 3. The brazing material layer 9a is, for example, a layer of an Al-based brazing material (eg, Al—Si based, Al—Si—Mg based brazing material).

Ｔｉ板２は、Ｔｉ又はＴｉ合金で形成された圧延材からなるものであり、Ｎｉ板１の下側に配置されている。   The Ti plate 2 is made of a rolled material formed of Ti or a Ti alloy, and is disposed below the Ni plate 1.

Ａｌ板３は、Ａｌ又はＡｌ合金で形成された圧延材からなるものであり、Ｔｉ板２の下側に配置されている。   The Al plate 3 is made of a rolled material formed of Al or an Al alloy, and is disposed below the Ti plate 2.

Ｎｉ板１とＴｉ板２は、本実施形態では、拡散接合としてのクラッド圧延により互いに接合一体化されている。これにより、Ｎｉ板１とＴｉ板２との接合界面にはＮｉ板１中のＮｉとＴｉ板２中のＴｉとが合金化してなる薄いＮｉ−Ｔｉ合金層（図示せず）が拡散接合層として介在形成されている。   In this embodiment, the Ni plate 1 and the Ti plate 2 are bonded and integrated with each other by clad rolling as diffusion bonding. Thereby, a thin Ni—Ti alloy layer (not shown) formed by alloying Ni in the Ni plate 1 and Ti in the Ti plate 2 is formed at the bonding interface between the Ni plate 1 and the Ti plate 2 as a diffusion bonding layer. As an intervening formation.

Ｔｉ板２とＡｌ板３は、本実施形態では、拡散接合としてのクラッド圧延により互いに接合一体化されている。これにより、Ｔｉ板２とＡｌ板３との接合界面にはＴｉ板２中のＴｉとＡｌ板３中のＡｌとが合金化してなる薄いＡｌ−Ｔｉ合金層（図示せず）が拡散接合層として介在形成されている。   In this embodiment, the Ti plate 2 and the Al plate 3 are bonded and integrated with each other by clad rolling as diffusion bonding. Thereby, a thin Al—Ti alloy layer (not shown) formed by alloying Ti in the Ti plate 2 and Al in the Al plate 3 is formed at the bonding interface between the Ti plate 2 and the Al plate 3 as a diffusion bonding layer. As an intervening formation.

さらに、金属回路板４の下面に形成されたろう材層９ａは、金属回路板４の下面にクラッド圧延により接合されたろう材板からなるものである。   Further, the brazing material layer 9 a formed on the lower surface of the metal circuit board 4 is made of a brazing material plate joined to the lower surface of the metal circuit board 4 by clad rolling.

絶縁板６は、電気絶縁性を有するものであり、セラミック板からなる。セラミックとしては、窒化アルミニウム（ＡｌＮ）、窒化ケイ素（Ｓｉ３Ｎ４）、アルミナ（Ａｌ２Ｏ３）、炭化ケイ素（ＳｉＣ）、酸化イットリウム（Ｙ２Ｏ３）、酸化カルシウム（ＣａＯ）、窒化ホウ素（ＢＮ）、酸化ベリリウム（ＢｅＯ）等が用いられる。 The insulating plate 6 has electrical insulation and is made of a ceramic plate. Ceramics include aluminum nitride (AlN), silicon nitride (Si 3 N 4 ), alumina (Al 2 O 3 ), silicon carbide (SiC), yttrium oxide (Y 2 O 3 ), calcium oxide (CaO), boron nitride (BN), beryllium oxide (BeO), or the like is used.

金属緩衝板７は、基板１０に発生する熱応力等の応力を緩和するためのものである。金属緩衝板７の材質はアルミニウム（アルミニウム合金を含む）等の金属である。具体的には金属緩衝板７は複数の孔７ａを有するパンチングメタル板で形成されている。さらに、金属緩衝板７の上面及び下面にそれぞれろう材層９ｂが形成されている。各ろう材層９ｂは、例えばＡｌ系ろう材（例：Ａｌ−Ｓｉ系、Ａｌ−Ｓｉ−Ｍｇ系ろう材）の層であり、金属緩衝板７の上面及び下面にそれぞれクラッド圧延によりクラッドされたろう材板からなる。   The metal buffer plate 7 is for relieving stress such as thermal stress generated in the substrate 10. The material of the metal buffer plate 7 is a metal such as aluminum (including an aluminum alloy). Specifically, the metal buffer plate 7 is formed of a punching metal plate having a plurality of holes 7a. Further, brazing material layers 9 b are formed on the upper and lower surfaces of the metal buffer plate 7, respectively. Each brazing material layer 9b is, for example, an Al-based brazing material (e.g., Al-Si-based, Al-Si-Mg-based brazing material), and the upper and lower surfaces of the metal buffer plate 7 are clad by clad rolling. Made of timber board.

冷却部材８は、電子素子１１の動作時に発熱する電子素子１１を冷却するものであり、例えば、アルミニウム（アルミニウム合金を含む）等の金属製である。本実施形態では、冷却部材８として、電子素子１１から発生した熱を放散する、複数の放熱フィン８ａを有するヒートシンク（放熱部材）が用いられている。   The cooling member 8 cools the electronic element 11 that generates heat when the electronic element 11 operates, and is made of metal such as aluminum (including an aluminum alloy), for example. In the present embodiment, a heat sink (heat radiating member) having a plurality of heat radiating fins 8 a that dissipates heat generated from the electronic element 11 is used as the cooling member 8.

なお本発明では、冷却部材８はヒートシンクであることに限定されるものではなく、その他に例えば冷却器であっても良い。この場合、冷却器は通常、水等の冷媒が流通する冷媒通路を有している。   In the present invention, the cooling member 8 is not limited to being a heat sink, but may be, for example, a cooler. In this case, the cooler usually has a refrigerant passage through which a refrigerant such as water flows.

次に、本実施形態の基板１０の製造方法について以下に説明する。   Next, the manufacturing method of the board | substrate 10 of this embodiment is demonstrated below.

図２に示すように、上から順に積層板５、絶縁板６、金属緩衝板７及び冷却部材８を積層状に配置する。積層板５は、上述したように、Ｎｉ板１と金属回路板４としてのＴｉ板２とＡｌ板３とが予め積層状に接合一体化されたものであり、更に、積層板５の下面にろう材層９ａが形成されている。金属緩衝板７は、上述したようにその上面及び下面にそれぞれろう材層９ｂが予め形成されている。   As shown in FIG. 2, the laminated board 5, the insulating board 6, the metal buffer board 7, and the cooling member 8 are arrange | positioned in order from the top. As described above, the laminated plate 5 is obtained by previously joining and integrating the Ni plate 1, the Ti plate 2 as the metal circuit plate 4, and the Al plate 3 in a laminated shape. A brazing filler metal layer 9a is formed. As described above, the metal buffer plate 7 is preliminarily formed with the brazing material layer 9b on the upper surface and the lower surface thereof.

そして、図３に示すように、これらの部材のうち少なくとも互いに重なり合う二つの部材をろう付けにより接合一体化する。この工程を「ろう付け工程」という。本実施形態では、これらの部材をろう付けにより一括して接合一体化する。そのろう付け手段及び条件は、これらの部材を強固に接合可能な手段及び条件であれば限定されるものではないが、ろう付け手段は特に真空ろう付けであることが望ましく、この場合、そのろう付け条件は、真空度１×１０-3〜１×１０-5Ｐａ、ろう付け温度５９０〜６１０℃、その保持時間３〜６０ｍｉｎであることが特に望ましい。 Then, as shown in FIG. 3, at least two members that overlap each other are joined and integrated by brazing. This process is called “brazing process”. In this embodiment, these members are joined and integrated together by brazing. The brazing means and conditions are not limited as long as these members can be firmly joined, and the brazing means is preferably vacuum brazing, in which case the brazing The brazing conditions are particularly preferably a degree of vacuum of 1 × 10 −3 to 1 × 10 −5 Pa, a brazing temperature of 590 to 610 ° C., and a holding time of 3 to 60 min.

なお本発明では、これらの部材は一括ろう付けにより接合されることに限定されるものではなく、その他に例えば、これらの部材を個別にろう付けにより接合しても良い。すなわち具体的に例示すると、積層板５と絶縁板６をろう付けにより接合一体化し、次いで絶縁板６と金属緩衝板７をろう付けにより接合一体化し、その後、金属緩衝板７と冷却部材８をろう付けにより接合一体化しても良いし、この逆の順番でこれらの部材をろう付けにより接合しても良い。さらに、これらの部材のうち互いに重なり合う二つの部材だけをろう付けにより接合一体化し、残りの部材をろう付け以外の接合手段により接合しても良いし、これらの部材のうちの三つ以上の部材をろう付けにより接合一体化し、残りの部材をろう付け以外の接合手段により接合しても良い。   In the present invention, these members are not limited to be joined by batch brazing, and for example, these members may be joined individually by brazing. Specifically, for example, the laminated plate 5 and the insulating plate 6 are joined and integrated by brazing, and then the insulating plate 6 and the metal buffer plate 7 are joined and integrated by brazing, and then the metal buffer plate 7 and the cooling member 8 are joined. These members may be joined and integrated by brazing, or these members may be joined by brazing in the reverse order. Further, only two members that overlap each other among these members may be joined and integrated by brazing, and the remaining members may be joined by a joining means other than brazing, or three or more of these members may be joined. May be joined and integrated by brazing, and the remaining members may be joined by a joining means other than brazing.

ろう付け以外の接合手段としては、締結部材（例：ボルト、ネジ）を用いた締結や、拡散接合（例：クラッド圧延、放電プラズマ焼結法）などが適用される。   As joining means other than brazing, fastening using fastening members (eg, bolts, screws), diffusion joining (eg, clad rolling, spark plasma sintering method), or the like is applied.

上述のろう付け工程を行うことにより、図３に示すように、Ｎｉ板１の上面１ａにその略全体に亘って厚さ０．００１〜０．５μｍ程度の酸化膜（詳述するとＮｉ酸化膜）１５がろう付け時に形成される。この酸化膜１５は、Ｎｉ板１の上面１ａのはんだ濡れ性を低下させる。   By performing the above-mentioned brazing process, as shown in FIG. 3, an oxide film having a thickness of about 0.001 to 0.5 [mu] m over the entire upper surface 1a of the Ni plate 1 (more specifically, a Ni oxide film). ) 15 is formed during brazing. This oxide film 15 reduces the solder wettability of the upper surface 1 a of the Ni plate 1.

そこで、ろう付け工程の後で酸化膜１５を水素還元法により除去する。この工程を「酸化膜除去工程」という。   Therefore, the oxide film 15 is removed by a hydrogen reduction method after the brazing process. This process is called “oxide film removal process”.

水素還元法による酸化膜１５の除去条件は限定されるものではないが、特に次の条件であることが酸化膜１５を確実に除去できる点等で好ましい。   The removal conditions of the oxide film 15 by the hydrogen reduction method are not limited, but the following conditions are particularly preferable because the oxide film 15 can be reliably removed.

望ましい水素還元雰囲気は、水素：窒素の体積割合が３〜５０体積％：５０〜９７体積％の雰囲気である。望ましい雰囲気圧力は１０〜１０１３ｈＰａである。望ましい加熱温度は２５０〜４００℃である。加熱温度の望ましい保持時間は３〜６０ｍｉｎである。   A desirable hydrogen reducing atmosphere is an atmosphere in which the volume ratio of hydrogen: nitrogen is 3 to 50% by volume: 50 to 97% by volume. A desirable atmospheric pressure is 10 to 1013 hPa. A desirable heating temperature is 250 to 400 ° C. A desirable holding time of the heating temperature is 3 to 60 min.

以上の工程を経ることにより、図１に示した本実施形態の基板１０が得られる。   Through the above steps, the substrate 10 of the present embodiment shown in FIG. 1 is obtained.

基板１０において、Ｎｉ板１と金属回路板４（詳述するとＴｉ板２）との間には上述したように両者１、４（２）を接合した拡散接合層として薄いＮｉ−Ｔｉ合金層（図示せず）が介在形成されている。金属回路板４におけるＴｉ板２とＡｌ板３との間には上述したように両者２、３を接合した拡散接合層として薄いＡｌ−Ｔｉ合金層（図示せず）が介在形成されている。金属回路板４（詳述するとＡｌ板３）と絶縁板６との間には両者４（３）、６を接合したろう材層９ａが介在形成されている。絶縁板６と金属緩衝板７との間には両者６、７を接合したろう材層９ｂが介在形成されている。金属緩衝７と冷却部材８との間には両者７、８を接合したろう材層９ｂが介在形成されている。   In the substrate 10, between the Ni plate 1 and the metal circuit plate 4 (specifically, the Ti plate 2), as described above, a thin Ni—Ti alloy layer (as a diffusion bonding layer obtained by bonding the two 1, 4 (2)) ( (Not shown) are interposed. As described above, a thin Al—Ti alloy layer (not shown) is interposed between the Ti plate 2 and the Al plate 3 in the metal circuit board 4 as a diffusion bonding layer in which the two and 3 are joined. Between the metal circuit board 4 (more specifically, the Al board 3) and the insulating board 6, a brazing material layer 9a in which both 4 (3) and 6 are joined is formed. Between the insulating plate 6 and the metal buffer plate 7, a brazing material layer 9 b in which both 6 and 7 are joined is formed. Between the metal buffer 7 and the cooling member 8, a brazing material layer 9 b in which both are joined is formed.

次いで、基板１０のＮｉ板１の上面１ａに電子素子１１をリフロー等のはんだ付けにより接合する。この工程を「はんだ付け工程」という。これにより、本実施形態の電子モジュール１２が得られる。   Next, the electronic element 11 is joined to the upper surface 1a of the Ni plate 1 of the substrate 10 by soldering such as reflow. This process is called a “soldering process”. Thereby, the electronic module 12 of this embodiment is obtained.

上記実施形態の基板１０の製造方法では、Ｎｉ板１の上面１ａに形成された酸化膜１５を水素還元法により除去するので、Ｎｉ板１の上面１ａにおいて酸化膜１５により低下したはんだ濡れ性を回復できる。さらに、水素還元法によれば水を用いないで酸化膜１５を除去できるので、水分がＮｉ板１の上面１ａに吸着することによるはんだ濡れ性の低下問題も回避できる。したがって、はんだ濡れ性が良好な上面１ａを有する基板１０を得ることができる。よって、基板１０の上面１ａに電子素子１１をはんだ付けにより良好に接合することができる。   In the manufacturing method of the substrate 10 of the above embodiment, the oxide film 15 formed on the upper surface 1a of the Ni plate 1 is removed by the hydrogen reduction method, and therefore, the solder wettability reduced by the oxide film 15 on the upper surface 1a of the Ni plate 1 is reduced. I can recover. Furthermore, since the oxide film 15 can be removed without using water according to the hydrogen reduction method, it is also possible to avoid the problem of lowering the solder wettability due to moisture adsorbed on the upper surface 1a of the Ni plate 1. Therefore, the board | substrate 10 which has the upper surface 1a with favorable solder wettability can be obtained. Therefore, the electronic element 11 can be favorably bonded to the upper surface 1a of the substrate 10 by soldering.

さらに、Ｎｉ板１は圧延材からなるので、一般的にＮｉ板１の上面１ａはＮｉめっき層の上面よりも平坦であり、よってはんだ濡れ性が良好である。しかも、Ｎｉ板１の平坦な上面１ａには酸化膜１５も平坦に形成されるから、酸化膜１５を水素還元法により除去し易い。したがって、酸化膜１５を容易に且つ略完全に除去することができる。   Furthermore, since the Ni plate 1 is made of a rolled material, the upper surface 1a of the Ni plate 1 is generally flatter than the upper surface of the Ni plating layer, and thus solder wettability is good. Moreover, since the oxide film 15 is also formed flat on the flat upper surface 1a of the Ni plate 1, the oxide film 15 can be easily removed by the hydrogen reduction method. Therefore, the oxide film 15 can be easily and substantially completely removed.

また金属回路板４は、Ｎｉ板１とは異種の金属板を少なくとも一枚含んでいるので、金属回路板４を構成する金属板（２、３）の枚数、材質、厚さ等を様々に変更することにより、金属回路板４の性能の向上を図ることができる。さらに、Ｎｉ板１と金属回路板４は、ろう付け工程の前に、拡散接合としてのクラッド圧延により互いに積層状に接合一体化されたものであるから、ろう付け工程で接合される部材の数を減らすことができ、これによりろう付け工程を容易に行うことがきる。   Further, since the metal circuit board 4 includes at least one metal plate different from the Ni board 1, the number, material, thickness, etc. of the metal plates (2, 3) constituting the metal circuit board 4 are variously changed. By changing, the performance of the metal circuit board 4 can be improved. Furthermore, since the Ni plate 1 and the metal circuit board 4 are joined and integrated with each other in a laminated form by clad rolling as diffusion bonding before the brazing step, the number of members to be joined in the brazing step Thus, the brazing process can be easily performed.

以上で本発明の一実施形態について説明したが、本発明は上記実施形態に示したものに限定されるものではなく、本発明の要旨を逸脱しない範囲内において様々に変更可能である。   Although one embodiment of the present invention has been described above, the present invention is not limited to that shown in the above embodiment, and various modifications can be made without departing from the scope of the present invention.

上記実施形態では、金属回路板４を構成する金属板（２、３）の枚数は二枚であるが、本発明ではその他に一枚だけであっても良いし、二枚や三枚以上であっても良い。   In the above embodiment, the number of the metal plates (2, 3) constituting the metal circuit plate 4 is two. However, in the present invention, there may be only one other, or two or three or more. There may be.

また上記実施形態では、積層板５は、Ｎｉ板１と金属回路板４としてのＴｉ板２とＡｌ板３とが互いに積層状に接合一体化されたものであるが、本発明では、積層板５はこれに限定されるものではなく、その他に例えば、金属回路板４がＴｉ板２だけを備えたものであってＮｉ板１と金属回路板４としてのＴｉ板２とが互いに積層状に接合一体化されたものであっても良いし、あるいは、金属回路板４がＡｌ板３だけを備えたものであってＮｉ板１と金属回路板４としてのＡｌ板３とが互いに接合一体化されたものであっても良い。   Moreover, in the said embodiment, although the laminated board 5 is the Ti board 2 and the Al board 3 as the Ni board 1, and the metal circuit board 4, it joined and integrated in the laminated form mutually, In this invention, a laminated board 5 is not limited to this. For example, the metal circuit board 4 includes only the Ti board 2, and the Ni board 1 and the Ti board 2 as the metal circuit board 4 are laminated to each other. The metal circuit board 4 may include only the Al plate 3 and the Ni plate 1 and the Al plate 3 as the metal circuit plate 4 may be joined and integrated with each other. It may be what was done.

さらに本発明では、Ｎｉ板１と金属回路板４はろう付け工程の前で接合一体化されたものであることに限定されず、その他に例えば、ろう付け工程の前ではＮｉ板１と金属回路板４とは接合されずに分離されていて、ろう付け工程にてＮｉ板１と金属回路板４とをろう付けにより接合一体化しても良い。   Further, in the present invention, the Ni plate 1 and the metal circuit board 4 are not limited to being joined and integrated before the brazing process, and for example, the Ni plate 1 and the metal circuit are used before the brazing process. The plate 4 may be separated without being joined, and the Ni plate 1 and the metal circuit plate 4 may be joined and integrated by brazing in a brazing process.

次に、本発明の具体的実施例及び比較例を示す。ただし本発明は以下の実施例に限定されるものではない。   Next, specific examples and comparative examples of the present invention will be shown. However, the present invention is not limited to the following examples.

＜実施例＞
Ｎｉ板と金属回路板としてのＡｌ板とがクラッド圧延により積層状に接合一体化されてなる積層板と、絶縁板と、金属緩衝板と、冷却部材とをそれぞれ準備した。 <Example>
A laminated plate obtained by joining and integrating a Ni plate and an Al plate as a metal circuit plate in a laminated form by clad rolling, an insulating plate, a metal buffer plate, and a cooling member were prepared.

積層板において、Ｎｉ板としてＪＩＳ（日本工業規格）１種の純ニッケル板を用いた。Ｎｉ板の平面視形状は正方形状であり、その一辺の長さは２５ｍｍであり、その厚さは０．０３ｍｍである。さらに、Ｎｉ板は圧延材からなるものである。   In the laminated plate, a JIS (Japanese Industrial Standard) type 1 pure nickel plate was used as the Ni plate. The Ni plate has a square shape in plan view, a length of one side of 25 mm, and a thickness of 0.03 mm. Furthermore, the Ni plate is made of a rolled material.

積層板において、Ａｌ板として純度９９．９９％の高純度アルミニウム板を用いた。Ａｌ板の平面視形状はＮｉ板と同じでありであり、その一辺の長さもＮｉ板と同じであり、その厚さは０．６ｍｍである。さらに、Ａｌ板は圧延材からなるものである。   In the laminated plate, a high-purity aluminum plate having a purity of 99.99% was used as the Al plate. The plan view shape of the Al plate is the same as that of the Ni plate, the length of one side thereof is also the same as that of the Ni plate, and the thickness thereof is 0.6 mm. Further, the Al plate is made of a rolled material.

絶縁板として窒化アルミニウム（ＡｌＮ）板を用いた。絶縁板の平面視形状は正方形状であり、その一辺の長さは２７ｍｍであり、その厚さは０．６３５ｍｍである。   An aluminum nitride (AlN) plate was used as the insulating plate. The plan view shape of the insulating plate is a square shape, the length of one side thereof is 27 mm, and the thickness thereof is 0.635 mm.

金属緩衝板として、アルミニウム製のパンチングメタル板を用いた。金属緩衝板の平面視形状は正方形状であり、その一辺の長さは２５ｍｍであり、その厚さは１．６ｍｍである。   An aluminum punching metal plate was used as the metal buffer plate. The metal buffer plate has a square shape in plan view, a side length of 25 mm, and a thickness of 1.6 mm.

冷却部材として、アルミニウム製の冷却器を用いた。冷却器はその内部に冷媒水が流通する冷媒通路を有するものである。冷却器の冷却面の平面視形状は正方形状であり、その一辺の長さは５０ｍｍである。冷却器の厚さは５ｍｍである。   An aluminum cooler was used as the cooling member. The cooler has a coolant passage through which coolant water flows. The plan view shape of the cooling surface of the cooler is square, and the length of one side is 50 mm. The thickness of the cooler is 5 mm.

そして、上から順に積層板、絶縁板、金属緩衝板及び冷却部材を積層状に配置し、これらの部材を真空ろう付炉を用いた真空ろう付けにより一括して接合一体化した。その際のろう付け条件は、真空度１×１０-4Ｐａ、ろう付け温度６００℃、その保持時間３０ｍｉｎであった。そして、炉内温度をろう付け温度から室温まで低下させる途中において炉内温度が５６０℃になった時に炉内に空気を導入して炉内を酸素雰囲気にした。これにより、積層板のＮｉ板の上面にその全面に亘ってＮｉ酸化膜が形成された。 Then, a laminated plate, an insulating plate, a metal buffer plate, and a cooling member were arranged in order from the top, and these members were joined and integrated together by vacuum brazing using a vacuum brazing furnace. The brazing conditions at that time were a degree of vacuum of 1 × 10 −4 Pa, a brazing temperature of 600 ° C., and a holding time of 30 min. Then, when the furnace temperature reached 560 ° C. while the furnace temperature was lowered from the brazing temperature to room temperature, air was introduced into the furnace to create an oxygen atmosphere in the furnace. Thereby, a Ni oxide film was formed over the entire upper surface of the Ni plate of the laminated plate.

その後、水素還元炉を用いてＮｉ酸化膜を水素還元法により除去した。その際の除去条件は次のとおりである。水素還元雰囲気は、水素：窒素の体積割合が４５体積％：５５体積％の雰囲気であり、その雰囲気圧力は１０１３ｈＰａ（即ち１ａｔｍ）であった。加熱温度及びその保持時間は３５０℃×５ｍｉｎである。   Thereafter, the Ni oxide film was removed by a hydrogen reduction method using a hydrogen reduction furnace. The removal conditions at that time are as follows. The hydrogen reducing atmosphere was an atmosphere in which the volume ratio of hydrogen: nitrogen was 45% by volume: 55% by volume, and the atmospheric pressure was 1013 hPa (ie, 1 atm). The heating temperature and the holding time are 350 ° C. × 5 min.

＜比較例１＞
金属回路板としてのＡｌ板と、絶縁板と、金属緩衝板と、冷却部材とをそれぞれ準備し、Ｎｉ板は準備しなかった。Ａｌ板、絶縁板、金属緩衝板及び冷却部材の構成は上記実施例と同じである。そして、これらの部材を上記実施例と同じ条件で真空ろう付けにより一括して接合一体化した。その後、Ａｌ板の上面にＮｉＰめっき層を常法に従って形成した。 <Comparative Example 1>
An Al plate as a metal circuit plate, an insulating plate, a metal buffer plate, and a cooling member were prepared, and an Ni plate was not prepared. The configurations of the Al plate, the insulating plate, the metal buffer plate, and the cooling member are the same as those in the above embodiment. These members were joined and integrated together by vacuum brazing under the same conditions as in the above example. Thereafter, a NiP plating layer was formed on the upper surface of the Al plate according to a conventional method.

＜比較例２＞
Ｎｉ板と金属回路板としてのＡｌ板とがクラッド圧延により積層状に接合一体化されてなる積層板と、絶縁板と、金属緩衝板と、冷却部材とをそれぞれ準備した。積層板、絶縁板、金属緩衝板及び冷却部材の構成は上記実施例と同じである。そして、これらの部材を上記実施例と同じ条件で真空ろう付けにより一括して接合一体化するとともに、当該ろう付け時に上記実施例と同じ条件で積層板のＮｉ板の上面にＮｉ酸化膜を形成した。その後、Ｎｉ酸化膜を湿式バフ研磨により除去した。 <Comparative Example 2>
A laminated plate obtained by joining and integrating a Ni plate and an Al plate as a metal circuit plate in a laminated form by clad rolling, an insulating plate, a metal buffer plate, and a cooling member were prepared. The configurations of the laminated plate, the insulating plate, the metal buffer plate, and the cooling member are the same as in the above embodiment. These members are collectively joined and integrated by vacuum brazing under the same conditions as in the above embodiment, and a Ni oxide film is formed on the upper surface of the Ni plate of the laminated board under the same conditions as in the above embodiment during the brazing. did. Thereafter, the Ni oxide film was removed by wet buffing.

＜評価試験＞
上記実施例の基板のＮｉ板の上面、上記比較例１の基板のＮｉＰめっき層の上面、及び、上記比較例２の基板のＮｉ板の上面を、それぞれ基板の電子素子搭載面とみなし、この搭載面上にはんだシートを配置してリフローによる電子素子の接合条件と略同じ条件でリフロー処理を施した。そのリフロー条件は次のとおりである。 <Evaluation test>
The upper surface of the Ni plate of the substrate of the example, the upper surface of the NiP plating layer of the substrate of the comparative example 1, and the upper surface of the Ni plate of the substrate of the comparative example 2 are regarded as electronic device mounting surfaces of the substrate, respectively. A solder sheet was placed on the mounting surface, and reflow treatment was performed under substantially the same conditions as those for joining the electronic elements by reflow. The reflow conditions are as follows.

リフロー雰囲気は、水素：窒素の体積割合が４５体積％：５５体積％の雰囲気であり、その雰囲気圧力は１０１３ｈＰａ（即ち１ａｔｍ）であり、加熱温度及びその保持時間は３００℃×５ｍｉｎであった。   The reflow atmosphere was an atmosphere where the volume ratio of hydrogen: nitrogen was 45% by volume: 55% by volume, the atmospheric pressure was 1013 hPa (ie, 1 atm), and the heating temperature and the holding time were 300 ° C. × 5 min.

そして、各基板の電子素子搭載面におけるはんだ濡れ性の評価として、はんだ付け前のはんだシートに対するはんだ付け後のはんだシートの収縮率を調べた。その結果を表１に示す。   Then, as an evaluation of the solder wettability on the electronic element mounting surface of each substrate, the shrinkage rate of the solder sheet after soldering with respect to the solder sheet before soldering was examined. The results are shown in Table 1.

Figure 2016076619
Figure 2016076619

表１中の「評価」欄に記載の符号の意味は次のとおりである。   The meanings of the symbols described in the “Evaluation” column in Table 1 are as follows.

◎：はんだシートの収縮率が５％以下
○：はんだシートの収縮率が５％を超え１０％以下
△：はんだシートの収縮率が１０％を超えた。 A: Solder sheet shrinkage rate is 5% or less. O: Solder sheet shrinkage rate is over 5% and 10% or less. Δ: Solder sheet shrinkage rate is over 10%.

表１に示すように、実施例の基板の電子素子搭載面であるＮｉ板の上面は良好なはんだ濡れ性を有していることを確認し得た。   As shown in Table 1, it was confirmed that the upper surface of the Ni plate, which is the electronic element mounting surface of the substrate of the example, had good solder wettability.

本発明は、電子素子が搭載される電子モジュール用基板の製造方法、電子モジュール用基板、電子モジュールの製造方法、及び、電子モジュールに利用可能である。   INDUSTRIAL APPLICABILITY The present invention is applicable to a method for manufacturing an electronic module substrate on which an electronic element is mounted, an electronic module substrate, an electronic module manufacturing method, and an electronic module.

１：Ｎｉ板
１ａ：Ｎｉ板の上面
２：Ｔｉ板
３：Ａｌ板
４：金属回路板
５：積層板
６：絶縁板
７：金属緩衝板
８：冷却部材
９ａ、９ｂ：ろう材層
１０：電子モジュール用基板
１１：電子素子
１２：電子モジュール 1: Ni plate 1a: Ni plate upper surface 2: Ti plate 3: Al plate 4: Metal circuit plate 5: Laminated plate 6: Insulating plate 7: Metal buffer plate 8: Cooling members 9a, 9b: Brazing material layer 10: Electronics Module substrate 11: Electronic element 12: Electronic module

Claims (11)

積層状に一体化された複数の部材を具備し、
前記複数の部材として、電子素子がはんだ付けにより接合される上面を有するＮｉ又はＮｉ合金で形成されたＮｉ板と、金属回路板と、絶縁板とを少なくとも含む、電子モジュール用基板の製造方法であって、
複数の部材のうち少なくとも互いに重なり合う二つの部材をろう付けにより接合することと、
前記ろう付け時に前記Ｎｉ板の上面に形成された酸化膜を、水素還元法により除去することを含む、電子モジュール用基板の製造方法。 It has a plurality of members integrated in a stack,
In the method for manufacturing a substrate for an electronic module, the plurality of members include at least a Ni plate formed of Ni or Ni alloy having an upper surface to which an electronic element is joined by soldering, a metal circuit plate, and an insulating plate. There,
Joining at least two members that overlap each other among a plurality of members by brazing;
The manufacturing method of the board | substrate for electronic modules including removing the oxide film formed on the upper surface of the said Ni board by the hydrogen reduction method at the time of the said brazing. 前記Ｎｉ板は圧延材からなる請求項１記載の電子モジュール用基板の製造方法。   The method for manufacturing a substrate for an electronic module according to claim 1, wherein the Ni plate is made of a rolled material. 前記複数の部材として、更に、金属緩衝板と冷却部材とを含んでいる請求項１又は２記載の電子モジュール用基板の製造方法。   The method for manufacturing an electronic module substrate according to claim 1, further comprising a metal buffer plate and a cooling member as the plurality of members. 前記金属回路板は、前記Ｎｉ板とは異種の金属板を少なくとも一枚含んでおり、
前記Ｎｉ板と前記金属回路板は、前記二つの部材をろう付けにより接合する前に、拡散接合により互いに積層状に接合一体化されたものである請求項１〜３のいずれかに記載の電子モジュール用基板の製造方法。 The metal circuit board includes at least one metal plate different from the Ni plate,
The electron according to any one of claims 1 to 3, wherein the Ni plate and the metal circuit board are joined and integrated in a laminated form by diffusion bonding before the two members are joined by brazing. A method for manufacturing a module substrate. 請求項１〜４のいずれに記載の電子モジュール用基板の製造方法により製造された電子モジュール用基板。   An electronic module substrate manufactured by the method for manufacturing an electronic module substrate according to claim 1. 積層状に一体化された複数の部材を具備し、
前記複数の部材として、電子素子がはんだ付けにより接合される上面を有するＮｉ又はＮｉ合金で形成されたＮｉ板と、金属回路板と、絶縁板とを少なくとも含む、電子モジュール用基板であって、
複数の部材のうち少なくとも互いに重なり合う二つの部材がろう付けにより接合されており、
ろう付け時にＮｉ板の上面に形成された酸化膜が、水素還元法により除去されている、電子モジュール用基板。 It has a plurality of members integrated in a stack,
An electronic module substrate comprising, as the plurality of members, at least a Ni plate formed of Ni or Ni alloy having an upper surface to which an electronic element is joined by soldering, a metal circuit plate, and an insulating plate,
Two members at least overlapping each other among the plurality of members are joined by brazing,
An electronic module substrate in which an oxide film formed on an upper surface of a Ni plate during brazing is removed by a hydrogen reduction method. 前記Ｎｉ板は圧延材からなる請求項６記載の電子モジュール用基板。   The electronic module substrate according to claim 6, wherein the Ni plate is made of a rolled material. 前記複数の部材として、更に、金属緩衝板と冷却部材とを含んでいる請求項６又は７記載の電子モジュール用基板。   The electronic module substrate according to claim 6 or 7, further comprising a metal buffer plate and a cooling member as the plurality of members. 前記金属回路板は、前記Ｎｉ板とは異種の金属板を少なくとも一枚含んでおり、
前記Ｎｉ板と前記金属回路板は、拡散接合により互いに接合一体化されている請求項６〜８のいずれかに記載の電子モジュール用基板。 The metal circuit board includes at least one metal plate different from the Ni plate,
The board for electronic modules according to claim 6, wherein the Ni plate and the metal circuit board are joined and integrated with each other by diffusion bonding. 請求項５〜９のいずれかに記載の電子モジュール用基板におけるＮｉ板の上面に、電子素子をはんだ付けにより接合する電子モジュールの製造方法。   The manufacturing method of the electronic module which joins an electronic element to the upper surface of the Ni board in the board | substrate for electronic modules in any one of Claims 5-9 by soldering. 請求項５〜９のいずれかに記載の電子モジュール用基板におけるＮｉ板の上面に、電子素子がはんだ付けにより接合されている電子モジュール。   The electronic module by which the electronic element is joined to the upper surface of the Ni board in the board | substrate for electronic modules in any one of Claims 5-9 by soldering.
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