JP2016040827A - 光センサおよびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title description 30
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- 239000004065 semiconductor Substances 0.000 claims description 48
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- 239000000463 material Substances 0.000 description 16
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
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- 238000013461 design Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910004200 TaSiN Inorganic materials 0.000 description 3
- 229910010038 TiAl Inorganic materials 0.000 description 3
- 229910010037 TiAlN Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/6452—Individual samples arranged in a regular 2D-array, e.g. multiwell plates
- G01N21/6454—Individual samples arranged in a regular 2D-array, e.g. multiwell plates using an integrated detector array
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/648—Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N21/7703—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
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- Chemical Kinetics & Catalysis (AREA)
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- Computer Hardware Design (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Optical Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (20)
- 半導電性基板と、
前記半導電性基板上の光検出領域と、
波入射部から導波路部を通ってサンプル保持部に光を導くように構成された導波路領域であって、
第1屈折率を含む第1誘電体層と、
第2屈折率を含む第2誘電体層と、を含み、
前記第2屈折率は前記第1屈折率より小さい前記導波路領域と、
前記導波路部に配置され、前記光検出領域から外部回路に電気信号を伝えるように構成された第1相互接続部とを含み、前記サンプル保持部は前記光検出領域の上方に位置する光センサ。 - 前記導波路領域の上方に第2相互接続部を更に含む請求項1に記載の光センサ。
- 前記第2相互接続部は、前記光検出領域に電気的に接続される請求項2に記載の光センサ。
- 前記第1相互接続部は、前記第2誘電体層に配置される導電層を含む請求項1に記載の光センサ。
- 前記導電層は、前記導波路領域の底部に配置される請求項4に記載の光センサ。
- 前記導電層は、開口部を含む請求項5に記載の光センサ。
- 前記サンプル保持部は、ほぼ前記第1誘電体層と前記第2誘電体層との間の界面における底部を含む請求項1に記載の光センサ。
- 前記波入射部の境界に整列する反射構造を更に含む請求項1に記載の光センサ。
- 前記第1相互接続部は、前記第1誘電体層にビア構造を含む請求項1に記載の光センサ。
- 前記波入射部の上に誘電体柱を更に含む請求項1に記載に光センサ。
- 半導電性基板と、
前記半導電性基板上にわたる誘電体層と、
前記誘電体層における反射構造と、
波入射部から導波路部を通ってサンプル保持部に光を導くように構成された導波路領域であって、前記誘電体層と前記反射構造とを含む前記導波路領域と、
前記半導電性基板上にわたる光検出領域と、を含み、前記導波路領域は前記光検出領域の上方に配置された半導体デバイス。 - 前記光検出領域は、多重接合フォトダイオードを含む請求項11に記載の半導体デバイス。
- 前記導波路領域の下方に相互接続領域を更に含み、前記相互接続領域は前記光検出領域の上方に配置された請求項11に記載の半導体デバイス。
- 前記誘電体層における前記反射構造は、前記光検出領域に電気的に接続されない請求項13に記載の半導体デバイス。
- 前記相互接続領域と前記導波路領域との間にフィルタ層を更に含む請求項13に記載の半導体デバイス。
- 前記波入射部は、回折格子を含む請求項11に記載の半導体デバイス。
- 前記誘電体層は、コア層とクラッド層とを含む請求項11に記載の半導体デバイス。
- 前記コア層と前記クラッド層との間の界面において、前記コア層の全面積と前記クラッド層における前記反射構造の全面積との間の比率は、約10より大きい請求項17に記載の半導体デバイス。
- 前記誘電体層は、少なくとも2つの異なる屈折率を有する複数の層を含む請求項11に記載の半導体デバイス。
- 前記サンプル保持部は、前記誘電体層の一部に囲まれた請求項11に記載の半導体デバイス。
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US201462036317P | 2014-08-12 | 2014-08-12 | |
US62/036,317 | 2014-08-12 |
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JP2016040827A true JP2016040827A (ja) | 2016-03-24 |
JP6267676B2 JP6267676B2 (ja) | 2018-01-24 |
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US (2) | US9812597B2 (ja) |
EP (1) | EP2993462B1 (ja) |
JP (1) | JP6267676B2 (ja) |
CN (1) | CN105374838B (ja) |
AU (1) | AU2015213291B9 (ja) |
TW (1) | TWI591834B (ja) |
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US10488639B2 (en) * | 2015-10-08 | 2019-11-26 | Visera Technologies Company Limited | Detection device for specimens |
US10522580B2 (en) * | 2017-08-23 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of light-sensing device |
US10475828B2 (en) | 2017-11-21 | 2019-11-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device structure with doping layer in light-sensing region |
US10763144B2 (en) | 2018-03-01 | 2020-09-01 | Verity Instruments, Inc. | Adaptable-modular optical sensor based process control system, and method of operation thereof |
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CN105374838A (zh) | 2016-03-02 |
EP2993462B1 (en) | 2019-05-22 |
AU2015213291B2 (en) | 2016-12-01 |
EP2993462A3 (en) | 2016-05-25 |
US20180013017A1 (en) | 2018-01-11 |
AU2015213291A1 (en) | 2016-03-03 |
AU2015213291B9 (en) | 2017-04-06 |
EP2993462A2 (en) | 2016-03-09 |
US20160049529A1 (en) | 2016-02-18 |
JP6267676B2 (ja) | 2018-01-24 |
TWI591834B (zh) | 2017-07-11 |
US9812597B2 (en) | 2017-11-07 |
CN105374838B (zh) | 2018-09-28 |
TW201607051A (zh) | 2016-02-16 |
US10566476B2 (en) | 2020-02-18 |
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