JP2016004112A - 表示装置の製造方法 - Google Patents
表示装置の製造方法 Download PDFInfo
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- JP2016004112A JP2016004112A JP2014123284A JP2014123284A JP2016004112A JP 2016004112 A JP2016004112 A JP 2016004112A JP 2014123284 A JP2014123284 A JP 2014123284A JP 2014123284 A JP2014123284 A JP 2014123284A JP 2016004112 A JP2016004112 A JP 2016004112A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 137
- 239000011521 glass Substances 0.000 claims abstract description 59
- 239000011347 resin Substances 0.000 claims abstract description 30
- 229920005989 resin Polymers 0.000 claims abstract description 30
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000007864 aqueous solution Substances 0.000 claims abstract description 5
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229920001721 polyimide Polymers 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 5
- 239000000243 solution Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 32
- 238000004140 cleaning Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 241000750042 Vini Species 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
[概略構成]
本発明の一実施形態における表示装置は、OLEDを用いた有機EL(Electro−Luminescence)表示装置である。この表示装置は、フレキシブル性を有する。なお、本実施形態における表示装置は、有機EL表示装置のような自発光型表示装置に限られず、液晶を用いた液晶表示装置、電気泳動素子を用いた電子ペーパ型表示装置等、他の表示装置であってもよい。
続いて、表示装置100の製造方法を説明する。
Claims (5)
- 表示素子を用いて画像を表示する表示装置を製造する方法であって、
ガラス基板の第1面を、弗化水素を含む水溶液に曝し、
前記ガラス基板の前記第1面上に極性基を有する有機樹脂膜を形成し、
前記有機樹脂膜上に前記表示素子を含む層を形成し、
前記表示素子を覆うように対向基板を貼り合わせる
ことを特徴とする表示装置の製造方法。 - 前記対向基板が貼り合わされた後に、前記ガラス基板側から前記有機樹脂膜に対して光を照射し、
前記光を照射した後に、前記ガラス基板を前記有機樹脂膜から剥離することを特徴とする請求項1に記載の表示装置の製造方法。 - 前記表示素子を含む層を形成するときには、熱処理が施され、
前記熱処理の後に、前記ガラス基板側から前記有機樹脂膜に対して光を照射し、
前記対向基板が貼り合わされた後に、前記ガラス基板を前記有機樹脂膜から剥離することを特徴とする請求項1に記載の表示装置の製造方法。 - 前記有機樹脂膜はポリイミドを含むことを特徴とする請求項1乃至請求項3のいずれかに記載の表示装置の製造方法。
- 前記表示素子を形成するときに、少なくとも300℃以上の熱処理が施されることを特徴とする請求項4に記載の表示装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014123284A JP2016004112A (ja) | 2014-06-16 | 2014-06-16 | 表示装置の製造方法 |
KR1020150078969A KR101701614B1 (ko) | 2014-06-16 | 2015-06-04 | 표시 장치의 제조 방법 |
US14/737,023 US9391098B2 (en) | 2014-06-16 | 2015-06-11 | Method of manufacturing a display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014123284A JP2016004112A (ja) | 2014-06-16 | 2014-06-16 | 表示装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016004112A true JP2016004112A (ja) | 2016-01-12 |
JP2016004112A5 JP2016004112A5 (ja) | 2016-09-23 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2014123284A Pending JP2016004112A (ja) | 2014-06-16 | 2014-06-16 | 表示装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9391098B2 (ja) |
JP (1) | JP2016004112A (ja) |
KR (1) | KR101701614B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017199928A1 (ja) * | 2016-05-16 | 2017-11-23 | 株式会社Nsc | 表示装置製造方法 |
JP2018006263A (ja) * | 2016-07-07 | 2018-01-11 | 株式会社ジャパンディスプレイ | 表示装置 |
JP2019124806A (ja) * | 2018-01-16 | 2019-07-25 | 株式会社Joled | 転送回路、シフトレジスタ、ゲートドライバ、表示パネル、およびフレキシブル基板 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190140081A1 (en) * | 2017-11-06 | 2019-05-09 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Tft substrate and manufacturing method thereof |
CN109860437B (zh) * | 2019-01-31 | 2021-12-03 | 京东方科技集团股份有限公司 | 柔性有机发光显示面板及其制作方法 |
CN110828520B (zh) * | 2019-11-15 | 2022-09-09 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板和显示装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01181430A (ja) * | 1988-01-08 | 1989-07-19 | Nissan Chem Ind Ltd | 電気・電子デバイス用絶縁膜 |
US20080292786A1 (en) * | 2007-05-23 | 2008-11-27 | Hitachi Displays, Ltd. | Method of manufacturing display device |
JP2009296000A (ja) * | 2004-01-16 | 2009-12-17 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US20100026938A1 (en) * | 2008-07-29 | 2010-02-04 | Hitachi Displays, Ltd. | Image display device and manufacturing method thereof |
WO2011030716A1 (ja) * | 2009-09-08 | 2011-03-17 | 旭硝子株式会社 | ガラス/樹脂積層体、及びそれを用いた電子デバイス |
US20110223697A1 (en) * | 2010-03-09 | 2011-09-15 | Samsung Mobile Display Co., Ltd. | Method of manufacturing flexible display device |
WO2014061612A1 (ja) * | 2012-10-17 | 2014-04-24 | 旭硝子株式会社 | 導電性薄膜付きガラス基板、薄膜太陽電池、低放射ガラス基板、導電性薄膜付きガラス基板の製造方法 |
Family Cites Families (6)
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KR100835053B1 (ko) | 2006-01-05 | 2008-06-03 | 삼성전기주식회사 | 반도체 발광 소자를 이용한 플렉서블 디스플레이 및 그제조 방법 |
US20100215873A1 (en) * | 2008-10-10 | 2010-08-26 | Tpo Displays Corp. | System for display images and fabrication method of display panels |
JPWO2011024690A1 (ja) * | 2009-08-27 | 2013-01-31 | 旭硝子株式会社 | フレキシブル基材−支持体の積層構造体、支持体付き電子デバイス用パネル、および電子デバイス用パネルの製造方法 |
KR102079188B1 (ko) * | 2012-05-09 | 2020-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
KR20140029987A (ko) * | 2012-08-31 | 2014-03-11 | 삼성디스플레이 주식회사 | 캐리어 기판, 이의 제조방법 및 이를 이용한 플렉서블 디스플레이 장치의 제조방법 |
JP2014186169A (ja) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | 表示装置の製造方法及び表示装置 |
-
2014
- 2014-06-16 JP JP2014123284A patent/JP2016004112A/ja active Pending
-
2015
- 2015-06-04 KR KR1020150078969A patent/KR101701614B1/ko active IP Right Grant
- 2015-06-11 US US14/737,023 patent/US9391098B2/en active Active
Patent Citations (10)
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JPH01181430A (ja) * | 1988-01-08 | 1989-07-19 | Nissan Chem Ind Ltd | 電気・電子デバイス用絶縁膜 |
JP2009296000A (ja) * | 2004-01-16 | 2009-12-17 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US20080292786A1 (en) * | 2007-05-23 | 2008-11-27 | Hitachi Displays, Ltd. | Method of manufacturing display device |
JP2008292608A (ja) * | 2007-05-23 | 2008-12-04 | Hitachi Displays Ltd | 表示装置の製造方法 |
US20100026938A1 (en) * | 2008-07-29 | 2010-02-04 | Hitachi Displays, Ltd. | Image display device and manufacturing method thereof |
JP2010032768A (ja) * | 2008-07-29 | 2010-02-12 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
WO2011030716A1 (ja) * | 2009-09-08 | 2011-03-17 | 旭硝子株式会社 | ガラス/樹脂積層体、及びそれを用いた電子デバイス |
US20110223697A1 (en) * | 2010-03-09 | 2011-09-15 | Samsung Mobile Display Co., Ltd. | Method of manufacturing flexible display device |
JP2011187446A (ja) * | 2010-03-09 | 2011-09-22 | Samsung Mobile Display Co Ltd | フレキシブルディスプレイ装置の製造方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017199928A1 (ja) * | 2016-05-16 | 2017-11-23 | 株式会社Nsc | 表示装置製造方法 |
JP2017207528A (ja) * | 2016-05-16 | 2017-11-24 | 株式会社Nsc | 表示装置製造方法 |
KR20190010871A (ko) | 2016-05-16 | 2019-01-31 | 가부시키가이샤 엔에스씨 | 표시장치 제조방법 |
JP2018006263A (ja) * | 2016-07-07 | 2018-01-11 | 株式会社ジャパンディスプレイ | 表示装置 |
JP2019124806A (ja) * | 2018-01-16 | 2019-07-25 | 株式会社Joled | 転送回路、シフトレジスタ、ゲートドライバ、表示パネル、およびフレキシブル基板 |
Also Published As
Publication number | Publication date |
---|---|
US9391098B2 (en) | 2016-07-12 |
US20150364506A1 (en) | 2015-12-17 |
KR20150144276A (ko) | 2015-12-24 |
KR101701614B1 (ko) | 2017-02-01 |
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