JP2015517740A - 発光ダイオード装置 - Google Patents
発光ダイオード装置 Download PDFInfo
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- JP2015517740A JP2015517740A JP2015513062A JP2015513062A JP2015517740A JP 2015517740 A JP2015517740 A JP 2015517740A JP 2015513062 A JP2015513062 A JP 2015513062A JP 2015513062 A JP2015513062 A JP 2015513062A JP 2015517740 A JP2015517740 A JP 2015517740A
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- emitting diode
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- 239000000758 substrate Substances 0.000 claims abstract description 112
- 239000000463 material Substances 0.000 claims description 23
- 239000000919 ceramic Substances 0.000 claims description 14
- 239000002131 composite material Substances 0.000 claims description 13
- 239000011368 organic material Substances 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 239000010949 copper Substances 0.000 description 13
- 239000011241 protective layer Substances 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
Description
たとえばこの基体は、SrTiO3,ZnO−Pr,またはZnO−Biを含む。さらにこの基体は、ZnO−Prおよびガラスからなる複合材、またはZnO−Prおよび有機材料からなる複合材を含んでよく、あるいはZnO−Prおよびガラスからなる複合材、またはZnO−Prおよび有機材料からなる複合材から成っていてよい。この「複合材」なる用語は、以下では特に、少なくとも2つの異なる材質からなる集合体または混合物に形成された材料を意味することがある。
Cu/Ni/Au,Cr/Ni/Au,Cr/Cu/Ni/Au,Cu/Ni/Sn,Cr/Ni/Sn,Cr/Cu/Ni/Sn。
Cu/Ni/Au,Cr/Ni/Au,Cr/Cu/Ni/Au,Cu/Ni/Sn,Cr/Ni/Sn,Cr/Cu/Ni/Sn。
2 基板
20 ESD保護素子
21 基体
3 発光ダイオードチップ
41 電子デバイス
42 さらなる電子デバイス
51 キャビティ
52,53 別のキャビティ
71 底面
72 側面
8 ビア
9 絶縁層
10 接続面
11 保護層
12 メタライジング部
13 電極
Claims (15)
- 発光ダイオード装置(1)であって、
少なくとも1つのキャビティ(51)を備えた基板(2)と、
前記少なくとも1つのキャビティ(51)内に、少なくとも部分的に沈み込んで配設されている発光ダイオードチップ(3)と、
前記基板(2)の部分領域によって形成されるESD保護素子(20)と、
を備えることを特徴とする発光ダイオード装置。 - 前記発光ダイオードチップ(3)は、前記少なくとも1つのキャビティ(51)内に、完全に沈み込んで配設されていることを特徴とする、請求項1に記載の発光ダイオード装置。
- 前記基板(2)上に配設されている電子デバイス(41)を備えることを特徴とする、請求項1または2に記載の発光ダイオード装置。
- 前記電子デバイス(41)は、もう1つのキャビティ(51)内に、完全に沈み込んで配設されていることを特徴とする、請求項3に記載の発光ダイオード装置。
- 発光ダイオード装置(1)であって、
少なくとも1つのキャビティ(51)を備えた基板(2)と、
前記基板(2)上に配設されている発光ダイオードチップ(3)と、
前記少なくとも1つのキャビティ(51)内に、完全に沈み込んで配設されている電子デバイス(41)と、
前記基板(2)の部分領域によって形成されるESD保護素子(20)と、
を備えることを特徴とする発光ダイオード装置。 - 前記電子デバイス(41)は、サーミスタデバイスであることを特徴とする、請求項3乃至5のいずれか1項に記載の発光ダイオード装置。
- 前記電子デバイス(41)およびもう1つの電子デバイス(42)が、1つ以上のキャビティ(52,53)内に、完全に沈み込んで配設されており、前記電子デバイス(41)は、NTCサーミスタデバイスとして実装されており、前記もう1つの電子デバイス(42)は、PTCサーミスタデバイスとして実装されていることを特徴とする、請求項3乃至6のいずれか1項に記載の発光ダイオード装置。
- 前記ESD保護素子(20)は、バリスタ材料および金属からなる複合体を備えることを特徴とする、請求項1乃至7のいずれか1項に記載の発光ダイオード装置。
- 前記ESD保護素子(20)は、前記基板に一体化された半導体ダイオードによって形成されていることを特徴とする、請求項1乃至8のいずれか1項に記載の発光ダイオード装置。
- 前記基板(2)は、セラミック基体(21)または有機材料を含む基体(21)を備え、あるいは半導体材料を含む基体を備えることを特徴とする、請求項1乃至9のいずれか1項に記載の発光ダイオード装置。
- 前記基体(21)は、SrTiO3,ZnO−PrまたはZnO−Biを含むことを特徴とする、請求項10に記載の発光ダイオード装置。
- 前記基体(21)は、ZnO−Prおよびガラスからなる複合体またはZnO−Prおよび有機材料からなる複合体を備えることを特徴とする、請求項10または11に記載の発光ダイオード装置。
- 前記基体(21)は、酸化アルミニウムまたは窒化アルミニウムを含むことを特徴とする、請求項10に記載の発光ダイオード装置。
- 前記基体(21)は、絶縁層(9)を備え、当該絶縁層は、酸化チタン,酸化アルミニウム,窒化アルミニウム,酸化シリコンまたは窒化シリコンを含むことを特徴とする、請求項10乃至13のいずれか1項に記載の発光ダイオード装置。
- 前記基体(21)は、ビア(複数)(8)を備え、少なくとも1つのビア(8)は、熱的ビアとして実装されていることを特徴とする、請求項10乃至14のいずれか1項に記載の発光ダイオード装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012104494.5 | 2012-05-24 | ||
DE102012104494A DE102012104494A1 (de) | 2012-05-24 | 2012-05-24 | Leuchtdiodenvorrichtung |
PCT/EP2013/058009 WO2013174583A1 (de) | 2012-05-24 | 2013-04-17 | Leuchtdiodenvorrichtung |
Publications (2)
Publication Number | Publication Date |
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JP2015517740A true JP2015517740A (ja) | 2015-06-22 |
JP6262725B2 JP6262725B2 (ja) | 2018-01-17 |
Family
ID=48095892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015513062A Expired - Fee Related JP6262725B2 (ja) | 2012-05-24 | 2013-04-17 | 発光ダイオード装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9449958B2 (ja) |
EP (1) | EP2856504B1 (ja) |
JP (1) | JP6262725B2 (ja) |
KR (1) | KR102057362B1 (ja) |
DE (1) | DE102012104494A1 (ja) |
WO (1) | WO2013174583A1 (ja) |
Cited By (7)
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JP2018530161A (ja) * | 2015-10-01 | 2018-10-11 | エルジー イノテック カンパニー リミテッド | 発光素子、発光素子の製造方法及び発光モジュール |
JP2019510377A (ja) * | 2016-03-24 | 2019-04-11 | ティーディーケイ・エレクトロニクス・アクチェンゲゼルシャフトTdk Electronics Ag | マルチledシステム |
JP2019515507A (ja) * | 2016-05-06 | 2019-06-06 | テーデーカー エレクトロニクス アーゲー | マルチledシステム |
JP2019523545A (ja) * | 2016-05-10 | 2019-08-22 | テーデーカー エレクトロニクス アーゲー | 多層素子及び多層素子を製造するための方法 |
JP2020530665A (ja) * | 2017-08-14 | 2020-10-22 | ティーディーケイ・エレクトロニクス・アクチェンゲゼルシャフトTdk Electronics Ag | Ledモジュール |
TWI730077B (zh) * | 2016-04-22 | 2021-06-11 | 德商Epcos Ag集團股份公司 | 多層-載體系統、製造多層-載體系統的方法及多層-載體系統的應用 |
WO2023276659A1 (ja) * | 2021-07-02 | 2023-01-05 | 株式会社日立ハイテク | 光源および自動分析装置 |
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---|---|---|---|---|
DE102008024479A1 (de) * | 2008-05-21 | 2009-12-03 | Epcos Ag | Elektrische Bauelementanordnung |
EP2892078A1 (en) * | 2013-12-30 | 2015-07-08 | OSRAM GmbH | A lighting device and corresponding method |
DE102014108368A1 (de) * | 2014-06-13 | 2015-12-17 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE102014115375A1 (de) * | 2014-08-08 | 2016-02-11 | Epcos Ag | Träger für eine LED |
DE102016205691A1 (de) * | 2016-04-06 | 2017-10-12 | Tridonic Jennersdorf Gmbh | LED-Modul in Chip-on-Board-Technologie |
DE102016122014A1 (de) * | 2016-11-16 | 2018-05-17 | Epcos Ag | Leistungsmodul mit verringerter Defektanfälligkeit und Verwendung desselben |
JP7152688B2 (ja) * | 2019-07-17 | 2022-10-13 | 日亜化学工業株式会社 | 発光装置 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11251644A (ja) * | 1998-02-27 | 1999-09-17 | Matsushita Electron Corp | 半導体発光装置 |
JP2000261039A (ja) * | 1999-03-12 | 2000-09-22 | Mitsubishi Electric Corp | 光源装置 |
JP2005150386A (ja) * | 2003-11-14 | 2005-06-09 | Stanley Electric Co Ltd | 半導体装置及びその製造方法 |
WO2006106717A1 (ja) * | 2005-04-01 | 2006-10-12 | Matsushita Electric Industrial Co., Ltd. | バリスタおよびそれを用いた電子部品モジュール |
JP2006339559A (ja) * | 2005-06-06 | 2006-12-14 | Matsushita Electric Ind Co Ltd | Led部品およびその製造方法 |
WO2007058438A1 (en) * | 2005-11-18 | 2007-05-24 | Amosense Co., Ltd. | Electronic parts packages |
JP2007150229A (ja) * | 2005-10-27 | 2007-06-14 | Kyocera Corp | 発光素子収納用パッケージならびにこれを用いた光源および発光装置 |
JP2008021987A (ja) * | 2006-06-16 | 2008-01-31 | Shinko Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法及び基板 |
JP2008022006A (ja) * | 2006-07-14 | 2008-01-31 | Lg Innotek Co Ltd | 発光ダイオードパッケージ |
JP2008270327A (ja) * | 2007-04-17 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 静電気対策部品およびこれを用いた発光ダイオードモジュール |
JP2009130237A (ja) * | 2007-11-27 | 2009-06-11 | Panasonic Corp | 発光装置 |
JP2009206422A (ja) * | 2008-02-29 | 2009-09-10 | Nichicon Corp | 表面実装型ledパッケージ |
US20100219733A1 (en) * | 2009-03-02 | 2010-09-02 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Light emitting device package for temeperature detection |
JP2010244973A (ja) * | 2009-04-09 | 2010-10-28 | Nittoh Kogaku Kk | Led照明装置およびled発光装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI284639B (en) | 2000-01-24 | 2007-08-01 | Shionogi & Co | A compound having thrombopoietin receptor agonistic effect |
US7095053B2 (en) * | 2003-05-05 | 2006-08-22 | Lamina Ceramics, Inc. | Light emitting diodes packaged for high temperature operation |
US7279724B2 (en) * | 2004-02-25 | 2007-10-09 | Philips Lumileds Lighting Company, Llc | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
FR2873527B1 (fr) | 2004-07-23 | 2006-12-01 | Gemplus Sa | Reduction d'influence des perturbations d'un terminal de lecture de carte a puce sans contact |
US20070200133A1 (en) | 2005-04-01 | 2007-08-30 | Akira Hashimoto | Led assembly and manufacturing method |
KR100638876B1 (ko) * | 2005-07-22 | 2006-10-27 | 삼성전기주식회사 | 보호 소자의 배치 구성을 개선한 측면형 발광 다이오드 |
KR101314713B1 (ko) | 2006-06-16 | 2013-10-07 | 신꼬오덴기 고교 가부시키가이샤 | 반도체 장치, 그 제조 방법, 및 기판 |
KR100757827B1 (ko) | 2006-09-29 | 2007-09-11 | 서울반도체 주식회사 | 발광 소자 |
US7714348B2 (en) * | 2006-10-06 | 2010-05-11 | Ac-Led Lighting, L.L.C. | AC/DC light emitting diodes with integrated protection mechanism |
KR100788931B1 (ko) * | 2006-10-27 | 2007-12-27 | (주) 아모센스 | 전자부품 패키지 |
US20080225449A1 (en) | 2007-03-13 | 2008-09-18 | Tatsuya Inoue | Electrostatic discharge protection component, and electronic component module using the same |
US7932806B2 (en) * | 2007-03-30 | 2011-04-26 | Tdk Corporation | Varistor and light emitting device |
US8436371B2 (en) * | 2007-05-24 | 2013-05-07 | Cree, Inc. | Microscale optoelectronic device packages |
DE102008024480A1 (de) * | 2008-05-21 | 2009-12-03 | Epcos Ag | Elektrische Bauelementanordnung |
DE102008024481B4 (de) | 2008-05-21 | 2021-04-15 | Tdk Electronics Ag | Elektrische Bauelementanordnung |
KR100999760B1 (ko) | 2008-09-26 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
DE102010001791A1 (de) * | 2009-02-16 | 2010-09-30 | Ledon Lighting Jennersdorf Gmbh | LED-Baueinheit |
TWI380433B (en) | 2009-02-25 | 2012-12-21 | Everlight Electronics Co Ltd | Light emitting diode package |
DE102009053064A1 (de) * | 2009-11-13 | 2011-05-19 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements |
TW201251140A (en) | 2011-01-31 | 2012-12-16 | Cree Inc | High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion |
-
2012
- 2012-05-24 DE DE102012104494A patent/DE102012104494A1/de not_active Ceased
-
2013
- 2013-04-17 US US14/403,143 patent/US9449958B2/en active Active
- 2013-04-17 KR KR1020147035631A patent/KR102057362B1/ko active IP Right Grant
- 2013-04-17 WO PCT/EP2013/058009 patent/WO2013174583A1/de active Application Filing
- 2013-04-17 JP JP2015513062A patent/JP6262725B2/ja not_active Expired - Fee Related
- 2013-04-17 EP EP13716325.9A patent/EP2856504B1/de not_active Not-in-force
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11251644A (ja) * | 1998-02-27 | 1999-09-17 | Matsushita Electron Corp | 半導体発光装置 |
JP2000261039A (ja) * | 1999-03-12 | 2000-09-22 | Mitsubishi Electric Corp | 光源装置 |
JP2005150386A (ja) * | 2003-11-14 | 2005-06-09 | Stanley Electric Co Ltd | 半導体装置及びその製造方法 |
WO2006106717A1 (ja) * | 2005-04-01 | 2006-10-12 | Matsushita Electric Industrial Co., Ltd. | バリスタおよびそれを用いた電子部品モジュール |
JP2006339559A (ja) * | 2005-06-06 | 2006-12-14 | Matsushita Electric Ind Co Ltd | Led部品およびその製造方法 |
JP2007150229A (ja) * | 2005-10-27 | 2007-06-14 | Kyocera Corp | 発光素子収納用パッケージならびにこれを用いた光源および発光装置 |
WO2007058438A1 (en) * | 2005-11-18 | 2007-05-24 | Amosense Co., Ltd. | Electronic parts packages |
JP2008021987A (ja) * | 2006-06-16 | 2008-01-31 | Shinko Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法及び基板 |
JP2008022006A (ja) * | 2006-07-14 | 2008-01-31 | Lg Innotek Co Ltd | 発光ダイオードパッケージ |
JP2008270327A (ja) * | 2007-04-17 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 静電気対策部品およびこれを用いた発光ダイオードモジュール |
JP2009130237A (ja) * | 2007-11-27 | 2009-06-11 | Panasonic Corp | 発光装置 |
JP2009206422A (ja) * | 2008-02-29 | 2009-09-10 | Nichicon Corp | 表面実装型ledパッケージ |
US20100219733A1 (en) * | 2009-03-02 | 2010-09-02 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Light emitting device package for temeperature detection |
JP2010244973A (ja) * | 2009-04-09 | 2010-10-28 | Nittoh Kogaku Kk | Led照明装置およびled発光装置 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018530161A (ja) * | 2015-10-01 | 2018-10-11 | エルジー イノテック カンパニー リミテッド | 発光素子、発光素子の製造方法及び発光モジュール |
JP2019510377A (ja) * | 2016-03-24 | 2019-04-11 | ティーディーケイ・エレクトロニクス・アクチェンゲゼルシャフトTdk Electronics Ag | マルチledシステム |
US10818641B2 (en) | 2016-03-24 | 2020-10-27 | Epcos Ag | Multi-LED system |
TWI730077B (zh) * | 2016-04-22 | 2021-06-11 | 德商Epcos Ag集團股份公司 | 多層-載體系統、製造多層-載體系統的方法及多層-載體系統的應用 |
JP2019515507A (ja) * | 2016-05-06 | 2019-06-06 | テーデーカー エレクトロニクス アーゲー | マルチledシステム |
JP2019523545A (ja) * | 2016-05-10 | 2019-08-22 | テーデーカー エレクトロニクス アーゲー | 多層素子及び多層素子を製造するための方法 |
JP2020530665A (ja) * | 2017-08-14 | 2020-10-22 | ティーディーケイ・エレクトロニクス・アクチェンゲゼルシャフトTdk Electronics Ag | Ledモジュール |
US11417583B2 (en) | 2017-08-14 | 2022-08-16 | Tdk Electronics Ag | LED module |
WO2023276659A1 (ja) * | 2021-07-02 | 2023-01-05 | 株式会社日立ハイテク | 光源および自動分析装置 |
Also Published As
Publication number | Publication date |
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KR20150022853A (ko) | 2015-03-04 |
EP2856504A1 (de) | 2015-04-08 |
KR102057362B1 (ko) | 2019-12-18 |
WO2013174583A1 (de) | 2013-11-28 |
JP6262725B2 (ja) | 2018-01-17 |
US20150144983A1 (en) | 2015-05-28 |
EP2856504B1 (de) | 2018-06-06 |
US9449958B2 (en) | 2016-09-20 |
DE102012104494A1 (de) | 2013-11-28 |
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