JP2015517020A - 層を形成する方法 - Google Patents
層を形成する方法 Download PDFInfo
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- JP2015517020A JP2015517020A JP2014555733A JP2014555733A JP2015517020A JP 2015517020 A JP2015517020 A JP 2015517020A JP 2014555733 A JP2014555733 A JP 2014555733A JP 2014555733 A JP2014555733 A JP 2014555733A JP 2015517020 A JP2015517020 A JP 2015517020A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
数ナノメートル深さまでの準単分子層の規模での表面、界面、または準表面層の材料工学が多くの多様な分野において技術的により一層重要になりつつある。そのような分野は、たとえば、数例を挙げると、データ記憶、マイクロエレクトロニクス、触媒作用、およびバイオ医学用途を含むことができる。したがって、そのような材料工学を実行するための新規なプロセスが常に必要である。
表面ナノ工学技術におけるプロセス相互作用は、表面層原子に、または表面から数結合長内の深さに制限され得る。たとえば表面注入(SI)、表面サブプランテーション(SSP)、エッチング、ドーピング、および界面工学を含む表面ナノ工学技術を展開し向上させるための方法がここに開示される。ここに開示される方法は、緩速、低速から適度に多重荷電した単原子または分子またはクラスタ、イオンを利用する。用途は、たとえば表面から数ナノメートル延在する深さ規模の表面改質、材料合成および構成上の変更、エッチング、および界面工学を含むことができる。ここでは炭素または水素化炭素膜について述べるが、開示される方法は、たとえばグラフェンおよび他の要素または要素の組合せを含む他の材料に広く適用可能である。いくつかの実施形態では、およそ250原子質量単位までの要素の層およびその組合せを形成することができる。さらに、たとえば準安定の表面組成または表面層を含む様々な種類の材料を形成することができる。ここに含まれる炭素膜への言及は例示にすぎず、したがって本開示の範囲を例示するが、限定しないことが意図される。
以下の説明では、この文書の一部を形成し、例示のためにいくつかの具体的な実施形態を示す添付の図面の組を参照する。本開示の範囲または精神から逸脱することなく他の実施形態が企図され、なされ得ることが理解されるべきである。したがって、以下の詳細な説明は限定的な意味に取られるべきではない。
Claims (20)
- 層を形成する方法であって、前記方法は、
その上への堆積に適合化された少なくとも1つの表面を有する基板を供給することと、
基板の表面に向かって粒子ビームを送ることとを含み、前記粒子ビームは、適度に荷電したイオン(MCI)を含み、実質的にすべての前記MCIは、±2〜±6の電荷と約200eV以下の運動エネルギとを個別に有し、
前記MCIは、約30Åを超えて基板の表面内に侵入せず、基板上に層を形成する、方法。 - 前記MCIは、単原子種、分子多原子種、クラスタ種、またはその組合せである、請求項1に記載の方法。
- 実質的にすべての前記MCIは、約5eVと200eVとの間の運動エネルギを有する、請求項1に記載の方法。
- 実質的にすべての前記MCIは、約5eVと100eVとの間の運動エネルギを有する、請求項1に記載の方法。
- 実質的にすべての前記MCIは、±3〜±6の電荷を有する、請求項1に記載の方法。
- 実質的にすべての前記MCIは、±3の電荷を有する、請求項1に記載の方法。
- 前記粒子ビームの供給源は、多重荷電イオンを生成するように構成される、請求項1に記載の方法。
- 前記供給源は、電子サイクロトロン共鳴(ECR)イオン源、マルチカスプイオン源、または電子ビームイオントラップ(EBIT)イオン源から選択される、請求項7に記載の方法。
- 層を形成する方法であって、前記方法は、
その上への堆積に適合化された少なくとも1つの表面を有する基板を供給することと、
基板の表面に向かって粒子ビームを送ることとを含み、前記粒子ビームは、適度に荷電したイオン(MCI)を含み、実質的にすべての前記MCIは、±2〜±10の電荷と約2000eV以下の運動エネルギとを個別に有し、
前記MCIは、約50Åを超えて基板の表面内に侵入せず、基板上に層を形成する、方法。 - 実質的にすべての前記MCIは、約5eVと2000eVとの間の運動エネルギを有する、請求項9に記載の方法。
- 実質的にすべての前記MCIは、±3〜±6の電荷を有する、請求項9に記載の方法。
- 前記粒子ビームの供給源は、多重荷電イオンを生成するように構成される、請求項9に記載の方法。
- 前記供給源は、電子サイクロトロン共鳴(ECR)イオン源、マルチカスプイオン源、または電子ビームイオントラップ(EBIT)イオン源から選択される、請求項12に記載の方法。
- 層を形成する方法であって、前記方法は、
その上への堆積に適合化された少なくとも1つの表面を有する基板を供給することと、
基板の表面に向かって粒子ビームを送ることとを含み、前記粒子ビームは、適度に荷電したイオン(MCI)を含み、実質的にすべての前記MCIは、±2〜±10の電荷を個別に有し、運動エネルギは、約5eVと約2000eVとの間の運動エネルギを有し、前記粒子ビームは、少なくとも加速減速ビーム輸送技術を用いて表面に向けて送られ、
前記MCIは、約50Åを超えて基板の表面内に侵入せず、基板上に層を形成する、方法。 - 実質的にすべての前記MCIは、±3〜±6の電荷を有する、請求項14に記載の方法。
- 実質的にすべての前記MCIは、約5eVと2000eVとの間の運動エネルギを有する、請求項14に記載の方法。
- 前記粒子ビームの供給源は、多重荷電イオンを生成するように構成される、請求項14に記載の方法。
- 前記供給源は、電子サイクロトロン共鳴(ECR)イオン源、マルチカスプイオン源、または電子ビームイオントラップ(EBIT)イオン源から選択される、請求項17に記載の方法。
- 前記MCIは炭素を含む、請求項14に記載の方法。
- 前記MCIは、±3〜±6の電荷を有する、請求項19に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261594547P | 2012-02-03 | 2012-02-03 | |
US61/594,547 | 2012-02-03 | ||
PCT/US2013/024269 WO2013116595A1 (en) | 2012-02-03 | 2013-02-01 | Methods of forming layers |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015517020A true JP2015517020A (ja) | 2015-06-18 |
JP2015517020A5 JP2015517020A5 (ja) | 2015-11-05 |
Family
ID=47790495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014555733A Pending JP2015517020A (ja) | 2012-02-03 | 2013-02-01 | 層を形成する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9275833B2 (ja) |
EP (1) | EP2810298A1 (ja) |
JP (1) | JP2015517020A (ja) |
KR (1) | KR101701731B1 (ja) |
CN (1) | CN104303265B (ja) |
MY (1) | MY174290A (ja) |
TW (1) | TWI516621B (ja) |
WO (1) | WO2013116595A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20130164454A1 (en) * | 2011-04-07 | 2013-06-27 | Seagate Technology Llc | Methods of forming layers |
JP2015517020A (ja) | 2012-02-03 | 2015-06-18 | シーゲイト テクノロジー エルエルシー | 層を形成する方法 |
US9280989B2 (en) | 2013-06-21 | 2016-03-08 | Seagate Technology Llc | Magnetic devices including near field transducer |
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2013
- 2013-02-01 JP JP2014555733A patent/JP2015517020A/ja active Pending
- 2013-02-01 CN CN201380012402.7A patent/CN104303265B/zh not_active Expired - Fee Related
- 2013-02-01 US US13/756,669 patent/US9275833B2/en not_active Expired - Fee Related
- 2013-02-01 WO PCT/US2013/024269 patent/WO2013116595A1/en active Application Filing
- 2013-02-01 KR KR1020147024665A patent/KR101701731B1/ko active IP Right Grant
- 2013-02-01 MY MYPI2014702116A patent/MY174290A/en unknown
- 2013-02-01 EP EP13707475.3A patent/EP2810298A1/en not_active Withdrawn
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63206387A (ja) * | 1987-02-19 | 1988-08-25 | Nissin Electric Co Ltd | ダイヤモンド薄膜の作製方法 |
US5849093A (en) * | 1992-01-08 | 1998-12-15 | Andrae; Juergen | Process for surface treatment with ions |
JPH11130589A (ja) * | 1997-10-28 | 1999-05-18 | Nippon Hoso Kyokai <Nhk> | ダイヤモンド膜またはダイヤモンド状炭素膜の成膜方法および装置、およびその方法および装置を用いて作製された冷陰極 |
JP2002544665A (ja) * | 1999-05-07 | 2002-12-24 | エキシオン | シリコン基板表面上への酸化珪素薄膜の成長方法及び2つの反応器を有する装置 |
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KR20140145123A (ko) | 2014-12-22 |
MY174290A (en) | 2020-04-02 |
US9275833B2 (en) | 2016-03-01 |
US20130200280A1 (en) | 2013-08-08 |
EP2810298A1 (en) | 2014-12-10 |
CN104303265B (zh) | 2018-08-14 |
CN104303265A (zh) | 2015-01-21 |
TW201348475A (zh) | 2013-12-01 |
KR101701731B1 (ko) | 2017-02-02 |
WO2013116595A1 (en) | 2013-08-08 |
TWI516621B (zh) | 2016-01-11 |
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