JP2015213408A5 - - Google Patents

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Publication number
JP2015213408A5
JP2015213408A5 JP2014095862A JP2014095862A JP2015213408A5 JP 2015213408 A5 JP2015213408 A5 JP 2015213408A5 JP 2014095862 A JP2014095862 A JP 2014095862A JP 2014095862 A JP2014095862 A JP 2014095862A JP 2015213408 A5 JP2015213408 A5 JP 2015213408A5
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JP
Japan
Prior art keywords
parallel
bus bar
terminal side
negative electrode
positive electrode
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JP2014095862A
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Japanese (ja)
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JP2015213408A (en
JP6288769B2 (en
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Priority to JP2014095862A priority Critical patent/JP6288769B2/en
Priority claimed from JP2014095862A external-priority patent/JP6288769B2/en
Publication of JP2015213408A publication Critical patent/JP2015213408A/en
Publication of JP2015213408A5 publication Critical patent/JP2015213408A5/ja
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Publication of JP6288769B2 publication Critical patent/JP6288769B2/en
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Claims (1)

請求項２ないし請求項８、および請求項１０ないし請求項１２のうちいずれか１項に記載の半導体パワーモジュールを、短手方向に複数並列に配置すると共に、
半導体パワーモジュールの前記正極端子および前記負極端子の側に、平滑コンデンサを設置し、互いに平行に、かつ互いの間に所定の距離が保持されるように固定された負極バスバと正極バスバとによって電気的に接続した、
ことを特徴とする電力変換装置。 A plurality of semiconductor power modules according to any one of claims 2 to 8 and claims 10 to 12 are arranged in parallel in a short direction,
A smoothing capacitor is installed on the positive electrode terminal side and the negative electrode terminal side of the semiconductor power module, and is electrically connected by a negative electrode bus bar and a positive electrode bus bar which are fixed in parallel to each other and maintained at a predetermined distance between each other. Connected,
The power converter characterized by the above-mentioned.
JP2014095862A 2014-05-07 2014-05-07 Semiconductor power module, power conversion device, and moving body using the same Active JP6288769B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014095862A JP6288769B2 (en) 2014-05-07 2014-05-07 Semiconductor power module, power conversion device, and moving body using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014095862A JP6288769B2 (en) 2014-05-07 2014-05-07 Semiconductor power module, power conversion device, and moving body using the same

Publications (3)

Publication Number Publication Date
JP2015213408A JP2015213408A (en) 2015-11-26
JP2015213408A5 true JP2015213408A5 (en) 2017-04-13
JP6288769B2 JP6288769B2 (en) 2018-03-07

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ID=54697373

Family Applications (1)

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JP2014095862A Active JP6288769B2 (en) 2014-05-07 2014-05-07 Semiconductor power module, power conversion device, and moving body using the same

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JP (1) JP6288769B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110168899B (en) 2016-12-14 2021-03-30 三菱电机株式会社 Power conversion device
US11271043B2 (en) * 2017-04-19 2022-03-08 Mitsubishi Electric Corporation Semiconductor module and power conversion apparatus
JP2019087668A (en) * 2017-11-08 2019-06-06 トヨタ自動車株式会社 Bus bar
JP6754387B2 (en) * 2018-03-15 2020-09-09 本田技研工業株式会社 Power converter
JP7172326B2 (en) 2018-09-14 2022-11-16 富士電機株式会社 Semiconductor units, semiconductor modules and semiconductor devices
JP7215265B2 (en) 2019-03-19 2023-01-31 富士電機株式会社 Semiconductor units, semiconductor modules and semiconductor devices
JP7351209B2 (en) 2019-12-17 2023-09-27 富士電機株式会社 semiconductor equipment
JP2024038575A (en) 2022-09-08 2024-03-21 三菱電機株式会社 Semiconductor device, semiconductor device manufacturing method, and power conversion device
CN115665970B (en) * 2022-10-08 2023-11-21 江苏东海半导体股份有限公司 IGBT drive protection circuit board

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177951A (en) * 1983-03-29 1984-10-08 Toshiba Corp Semiconductor device
JP2894402B2 (en) * 1992-07-20 1999-05-24 富士電機株式会社 Semiconductor device
JP3550970B2 (en) * 1997-09-19 2004-08-04 株式会社日立製作所 Power converter, multilayer laminated conductor and electrical component connector
JPH11177017A (en) * 1997-12-16 1999-07-02 Nippon Inter Electronics Corp Composite semiconductor device
JP4540884B2 (en) * 2001-06-19 2010-09-08 三菱電機株式会社 Semiconductor device
JP2004014547A (en) * 2002-06-03 2004-01-15 Toshiba Corp Semiconductor device and capacitance regulating circuit
JP4276037B2 (en) * 2003-09-18 2009-06-10 三菱電機株式会社 Semiconductor module
JP2013140889A (en) * 2012-01-05 2013-07-18 Hitachi Ltd Power module
JP5835167B2 (en) * 2012-09-07 2015-12-24 トヨタ自動車株式会社 Power module structure

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