JP2015211139A5 - - Google Patents
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- JP2015211139A5 JP2015211139A5 JP2014092095A JP2014092095A JP2015211139A5 JP 2015211139 A5 JP2015211139 A5 JP 2015211139A5 JP 2014092095 A JP2014092095 A JP 2014092095A JP 2014092095 A JP2014092095 A JP 2014092095A JP 2015211139 A5 JP2015211139 A5 JP 2015211139A5
- Authority
- JP
- Japan
- Prior art keywords
- frequency power
- wafer
- amount
- dry etching
- heat input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 235000012431 wafers Nutrition 0.000 claims 15
- 238000001312 dry etching Methods 0.000 claims 12
- 238000005530 etching Methods 0.000 claims 12
- 210000002381 Plasma Anatomy 0.000 claims 6
- 238000005259 measurement Methods 0.000 claims 2
- 238000000295 emission spectrum Methods 0.000 claims 1
- 238000000691 measurement method Methods 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014092095A JP6200849B2 (ja) | 2014-04-25 | 2014-04-25 | プラズマ処理装置およびドライエッチング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014092095A JP6200849B2 (ja) | 2014-04-25 | 2014-04-25 | プラズマ処理装置およびドライエッチング方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015211139A JP2015211139A (ja) | 2015-11-24 |
JP2015211139A5 true JP2015211139A5 (ru) | 2017-01-19 |
JP6200849B2 JP6200849B2 (ja) | 2017-09-20 |
Family
ID=54613121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014092095A Active JP6200849B2 (ja) | 2014-04-25 | 2014-04-25 | プラズマ処理装置およびドライエッチング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6200849B2 (ru) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116631865A (zh) * | 2016-01-20 | 2023-08-22 | 应用材料公司 | 用于侧向硬模凹槽减小的混合碳硬模 |
JPWO2018037799A1 (ja) * | 2016-08-25 | 2019-06-20 | 日本ゼオン株式会社 | プラズマエッチング方法 |
JP6928548B2 (ja) * | 2017-12-27 | 2021-09-01 | 東京エレクトロン株式会社 | エッチング方法 |
US20200203234A1 (en) * | 2018-12-14 | 2020-06-25 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Method of forming high aspect ratio features in semiconductor substrate |
KR102419373B1 (ko) * | 2019-04-19 | 2022-07-12 | 주식회사 히타치하이테크 | 플라스마 처리 방법 |
JP7296277B2 (ja) * | 2019-08-22 | 2023-06-22 | 東京エレクトロン株式会社 | エッチングする方法、デバイス製造方法、及びプラズマ処理装置 |
WO2023199371A1 (ja) * | 2022-04-11 | 2023-10-19 | 株式会社日立ハイテク | プラズマ処理方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4723871B2 (ja) * | 2004-06-23 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | ドライエッチング装置 |
JP2008071951A (ja) * | 2006-09-14 | 2008-03-27 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JP5491648B2 (ja) * | 2006-10-06 | 2014-05-14 | 東京エレクトロン株式会社 | プラズマエッチング装置およびプラズマエッチング方法 |
JP2009193989A (ja) * | 2008-02-12 | 2009-08-27 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体 |
JP2010205967A (ja) * | 2009-03-04 | 2010-09-16 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体 |
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2014
- 2014-04-25 JP JP2014092095A patent/JP6200849B2/ja active Active
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