JP2015195271A - semiconductor device - Google Patents

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JP2015195271A
JP2015195271A JP2014072254A JP2014072254A JP2015195271A JP 2015195271 A JP2015195271 A JP 2015195271A JP 2014072254 A JP2014072254 A JP 2014072254A JP 2014072254 A JP2014072254 A JP 2014072254A JP 2015195271 A JP2015195271 A JP 2015195271A
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light
substrate
semiconductor laser
laser elements
semiconductor device
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佐久間　仁
Hitoshi Sakuma
仁 佐久間
和重 川▲崎▼
Kazushige Kawasaki
和重 川▲崎▼
哲也 上辻
Tetsuya Uetsuji
哲也 上辻
大介 森田
Daisuke Morita
大介 森田
啓資 松本
Keisuke Matsumoto
啓資 松本
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device that has a configuration suitable for reduction in the number of components and is capable of suppressing power consumption of an optical amplifier.SOLUTION: The semiconductor device includes: a substrate, a plurality of semiconductor laser elements mounted on the substrate; a forward optical multiplexer which is mounted on the substrate and multiplexes forward output light of the plurality of semiconductor laser elements; an optical amplifier which is mounted on the substrate and amplifies light multiplexed with the forward optical multiplexer; and a light receiving element for monitor which is mounted on the substrate and receives backward output light of the plurality of semiconductor laser elements.

Description

本発明は、例えば光通信システムに使用される半導体装置に関する。   The present invention relates to a semiconductor device used in, for example, an optical communication system.

特許文献１の図９等には、半導体レーザ素子からのレーザ光を光増幅器で増幅した後に分岐する半導体装置が開示されている。分岐されたレーザ光の一方は光ファイバに導かれ、他方はモニタ用受光素子に導かれる。モニタ用受光素子は、半導体レーザ素子の波長チューニングに用いられる。   FIG. 9 and the like of Patent Document 1 disclose a semiconductor device that branches after the laser light from the semiconductor laser element is amplified by an optical amplifier. One of the branched laser beams is guided to the optical fiber, and the other is guided to the light receiving element for monitoring. The monitor light receiving element is used for wavelength tuning of the semiconductor laser element.

特開２００７−１５８０５７号公報JP 2007-158057 A

特許文献１に開示の半導体装置は、半導体レーザ素子と、光増幅器と、モニタ用受光素子とが１枚の基板に設けられているので、部品点数の削減に適した構成となっている。しかしながら、この半導体装置では光増幅器で増幅されたレーザ光（増幅光）の一部をモニタ用受光素子で消費する。そのため、光ファイバへ導く増幅光の光強度を十分な値とするために、光増幅器の駆動電力を上げなければならない。よって、光増幅器の消費電力が高くなる問題があった。   The semiconductor device disclosed in Patent Document 1 has a configuration suitable for reducing the number of parts because the semiconductor laser element, the optical amplifier, and the light receiving element for monitoring are provided on one substrate. However, in this semiconductor device, a part of the laser light (amplified light) amplified by the optical amplifier is consumed by the monitoring light receiving element. Therefore, the drive power of the optical amplifier must be increased in order to make the light intensity of the amplified light guided to the optical fiber a sufficient value. Therefore, there is a problem that the power consumption of the optical amplifier becomes high.

本発明は、上述のような課題を解決するためになされたもので、部品点数の削減に適した構成を有し、かつ光増幅器の消費電力を抑制できる半導体装置を提供することを目的とする。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor device having a configuration suitable for reducing the number of components and capable of suppressing power consumption of an optical amplifier. .

本願の発明に係る半導体装置は、１枚の基板と、該基板に設けられた複数の半導体レーザ素子と、該基板に設けられた、該複数の半導体レーザ素子の前方出力光を合波する前方光合波器と、該基板に設けられた、該前方光合波器で合波された光を増幅する光増幅器と、該基板に設けられた、該複数の半導体レーザ素子の後方出力光を受光するモニタ用受光素子と、を備えたことを特徴とする。   A semiconductor device according to the invention of the present application includes a single substrate, a plurality of semiconductor laser elements provided on the substrate, and a front that combines front output lights of the plurality of semiconductor laser elements provided on the substrate. An optical multiplexer, an optical amplifier provided on the substrate for amplifying the light combined by the front optical multiplexer, and rear output light of the plurality of semiconductor laser elements provided on the substrate are received. And a light-receiving element for monitoring.

本願の発明に係る他の半導体装置は、１枚の基板と、該基板に設けられた複数の半導体レーザ素子と、該基板に設けられた、該複数の半導体レーザ素子の前方出力光を合波する前方光合波器と、該基板に設けられた、モニタ用受光素子と、該基板に設けられた、光増幅器と、を備え、該前方光合波器で合波された光のうち、一部は該モニタ用受光素子で受光され、残りの光は該光増幅器で増幅されることを特徴とする。   Another semiconductor device according to the invention of the present application combines one substrate, a plurality of semiconductor laser elements provided on the substrate, and front output light of the plurality of semiconductor laser elements provided on the substrate. A part of the light combined by the front optical multiplexer, a light receiving element for monitoring provided on the substrate, and an optical amplifier provided on the substrate. Is received by the light-receiving element for monitoring, and the remaining light is amplified by the optical amplifier.

本発明によれば、光増幅器で増幅する前のレーザ光をモニタ用受光素子で受光するので、部品点数の削減に適した構成を有し、かつ光増幅器の消費電力を抑制できる。   According to the present invention, since the laser light before being amplified by the optical amplifier is received by the monitoring light receiving element, the configuration is suitable for reducing the number of components, and the power consumption of the optical amplifier can be suppressed.

本発明の実施の形態１に係る半導体装置の平面図である。1 is a plan view of a semiconductor device according to a first embodiment of the present invention. 本発明の実施の形態２に係る半導体装置の平面図である。It is a top view of the semiconductor device which concerns on Embodiment 2 of this invention. 本発明の実施の形態３に係る半導体装置の平面図である。It is a top view of the semiconductor device which concerns on Embodiment 3 of this invention. 本発明の実施の形態４に係る半導体装置の平面図である。It is a top view of the semiconductor device which concerns on Embodiment 4 of this invention.

本発明の実施の形態に係る半導体装置について図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。   A semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.

実施の形態１．
図１は、本発明の実施の形態１に係る半導体装置１０の平面図である。半導体装置１０は１枚の基板１２を備えている。基板１２には、例えば位相シフト型のＤＦＢレーザ素子で構成された複数の半導体レーザ素子１４が設けられている。複数の半導体レーザ素子１４は半導体レーザ素子アレイを構成している。 Embodiment 1 FIG.
FIG. 1 is a plan view of a semiconductor device 10 according to the first embodiment of the present invention. The semiconductor device 10 includes a single substrate 12. The substrate 12 is provided with a plurality of semiconductor laser elements 14 made of, for example, phase shift type DFB laser elements. The plurality of semiconductor laser elements 14 constitutes a semiconductor laser element array.

複数の半導体レーザ素子１４の前方出力光は、導波路１６によって、基板１２に設けられた前方光合波器１８に導かれる。前方光合波器１８は、複数の半導体レーザ素子１４の前方出力光を合波する。   The forward output light of the plurality of semiconductor laser elements 14 is guided by the waveguide 16 to the forward optical multiplexer 18 provided on the substrate 12. The forward optical multiplexer 18 multiplexes the forward output light of the plurality of semiconductor laser elements 14.

前方光合波器１８で合波された光は、導波路２０によって、基板１２に設けられた光増幅器２２に導かれる。光増幅器２２は、前方光合波器１８で合波された光を増幅する。増幅された光は外部の光ファイバに入射する。このように、半導体装置１０は、１本の光ファイバに多数の異なる波長の光信号を多重化する高密度波長多重(DWDM：Dens Wavelength Division Multiplexing)方式を採用している。   The light combined by the front optical multiplexer 18 is guided to the optical amplifier 22 provided on the substrate 12 by the waveguide 20. The optical amplifier 22 amplifies the light combined by the front optical multiplexer 18. The amplified light is incident on an external optical fiber. As described above, the semiconductor device 10 employs a DWDM (Dens Wavelength Division Multiplexing) method in which a large number of optical signals having different wavelengths are multiplexed on one optical fiber.

複数の半導体レーザ素子１４の後方出力光は、導波路３０によって、基板１２に設けられたモニタ用受光素子３２に導かれる。モニタ用受光素子３２は複数の半導体レーザ素子１４と同数設けられている。そして、複数のモニタ用受光素子３２は、複数の半導体レーザ素子１４の後方出力光を個別に受光する。複数のモニタ用受光素子３２は、半導体レーザ素子１４の波長チューニングのための波長モニタ、半導体レーザ素子１４のパワーをモニタするためのパワモニタ、又は波長モニタ及びパワモニタとして用いる。モニタの結果に基づき、半導体レーザ素子１４の駆動電流等を制御する。   The rear output light of the plurality of semiconductor laser elements 14 is guided to the monitor light receiving element 32 provided on the substrate 12 by the waveguide 30. The same number of monitoring light receiving elements 32 as the plurality of semiconductor laser elements 14 are provided. The plurality of monitor light receiving elements 32 individually receive the rear output light of the plurality of semiconductor laser elements 14. The plurality of monitor light receiving elements 32 are used as a wavelength monitor for wavelength tuning of the semiconductor laser element 14, a power monitor for monitoring the power of the semiconductor laser element 14, or a wavelength monitor and a power monitor. Based on the monitoring result, the drive current of the semiconductor laser element 14 is controlled.

本発明の実施の形態１に係る半導体装置１０によれば、複数の半導体レーザ素子１４、前方光合波器１８、及び光増幅器２２に加え、モニタ用受光素子３２を１枚の基板１２に集積した。従って部品点数の削減に適した構成となっているので半導体装置のコストダウンが可能である。   According to the semiconductor device 10 according to the first embodiment of the present invention, the monitoring light receiving element 32 is integrated on the single substrate 12 in addition to the plurality of semiconductor laser elements 14, the forward optical multiplexer 18, and the optical amplifier 22. . Accordingly, since the configuration is suitable for reducing the number of parts, the cost of the semiconductor device can be reduced.

半導体レーザ素子１４は、図１の右側（前方）に前方出力光を出射し、図１の左側（後方）に後方出力光を出射する。前方出力光と後方出力光の強度はほぼ同等である。本発明の実施の形態１では、前方出力光を通信に使用し、後方出力光をモニタに使用する。従って、前方出力光のすべてを通信に用いることができるので、その一部をモニタ用に用いる場合と比べて、光増幅器の消費電力を抑制できる。   The semiconductor laser element 14 emits front output light to the right (front) of FIG. 1 and emits rear output light to the left (rear) of FIG. The intensity of the front output light and the rear output light are substantially equal. In Embodiment 1 of the present invention, the front output light is used for communication and the rear output light is used for monitoring. Accordingly, since all of the front output light can be used for communication, the power consumption of the optical amplifier can be suppressed as compared with the case where a part of the light is used for monitoring.

半導体レーザ素子１４の数は複数であれば特に限定されない。以下の実施の形態でも同様である。以下の実施の形態に係る半導体装置は、実施の形態１との一致点が多いので、実施の形態１との相違点を中心に説明する。   The number of semiconductor laser elements 14 is not particularly limited as long as it is plural. The same applies to the following embodiments. Since the semiconductor device according to the following embodiment has many points of coincidence with those of the first embodiment, differences from the first embodiment will be mainly described.

実施の形態２．
図２は、本発明の実施の形態２に係る半導体装置５０の平面図である。複数の半導体レーザ素子１４の後方出力光は、導波路５２によって、一箇所（狭い範囲）に導かれる。そして、モニタ用受光素子５４は、複数の半導体レーザ素子１４の後方出力光をまとめて受光する１つの素子である。半導体装置５０ではモニタ用受光素子５４が１つだけ設けられているので、実施の形態１の半導体装置１０と比べてモニタ用受光素子の数を減らすことができる。 Embodiment 2. FIG.
FIG. 2 is a plan view of the semiconductor device 50 according to the second embodiment of the present invention. The rear output light of the plurality of semiconductor laser elements 14 is guided to one place (narrow range) by the waveguide 52. The monitoring light receiving element 54 is one element that collectively receives the rear output light of the plurality of semiconductor laser elements 14. Since only one monitor light receiving element 54 is provided in the semiconductor device 50, the number of monitor light receiving elements can be reduced as compared with the semiconductor device 10 of the first embodiment.

実施の形態３．
図３は、本発明の実施の形態３に係る半導体装置１００の平面図である。基板１２に後方光合波器１０２が設けられている。後方光合波器１０２は、複数の半導体レーザ素子１４の後方出力光を合波する。そして、モニタ用受光素子１０６は後方光合波器１０２で合波された光を受光する。半導体装置１００によれば、後方光合波器１０２で合波された光をモニタ用受光素子１０６で受光するので、図２のモニタ用受光素子５４よりもモニタ用受光素子のサイズを小さくできる。 Embodiment 3 FIG.
FIG. 3 is a plan view of the semiconductor device 100 according to the third embodiment of the present invention. A rear optical multiplexer 102 is provided on the substrate 12. The rear optical multiplexer 102 combines the rear output lights of the plurality of semiconductor laser elements 14. The monitor light receiving element 106 receives the light combined by the rear optical multiplexer 102. According to the semiconductor device 100, since the light combined by the rear optical multiplexer 102 is received by the monitor light receiving element 106, the size of the monitor light receiving element can be made smaller than that of the monitor light receiving element 54 of FIG.

実施の形態４．
図４は、本発明の実施の形態４に係る半導体装置１５０の平面図である。前方光合波器１８には導波路１５２を介してモニタ用受光素子１５４が接続されている。前方光合波器１８で合波された光のうち、一部はモニタ用受光素子１５４で受光され、残りの光は光増幅器２２で増幅される。 Embodiment 4 FIG.
FIG. 4 is a plan view of a semiconductor device 150 according to the fourth embodiment of the present invention. A monitoring light receiving element 154 is connected to the front optical multiplexer 18 via a waveguide 152. A part of the light combined by the front optical multiplexer 18 is received by the monitoring light receiving element 154, and the remaining light is amplified by the optical amplifier 22.

光増幅器で増幅されたレーザ光（増幅光）の一部をモニタ用受光素子で受光（消費）すると、光ファイバへ導くレーザ光の光強度を十分な値とするために、光増幅器の消費電力を上げなければならない。   When a part of the laser light (amplified light) amplified by the optical amplifier is received (consumed) by the monitoring light receiving element, the power consumption of the optical amplifier is set so that the light intensity of the laser light guided to the optical fiber is sufficient Must be raised.

本発明の実施の形態４に係る半導体装置１５０では、光増幅器２２で増幅する前の前方出力光の一部をモニタ用受光素子１５４で受光する。従って、モニタ用受光素子１５４でレーザ光を受光した分、光増幅器２２に入るレーザ光は若干減少する。しかし、光増幅器２２はレーザ光を非線形増幅するので、この減少分による光増幅器２２の出力変化は無視できるほど小さい。よって、この減少分を補うために光増幅器の消費電力を増加させる必要はない。   In the semiconductor device 150 according to the fourth embodiment of the present invention, a part of the forward output light before being amplified by the optical amplifier 22 is received by the monitor light receiving element 154. Accordingly, the amount of laser light entering the optical amplifier 22 is slightly reduced by the amount of light received by the monitor light receiving element 154. However, since the optical amplifier 22 nonlinearly amplifies the laser light, the output change of the optical amplifier 22 due to this decrease is so small that it can be ignored. Therefore, it is not necessary to increase the power consumption of the optical amplifier to compensate for this decrease.

１０ 半導体装置、 １２ 基板、 １４ 半導体レーザ素子、 １６,２０,３０ 導波路、 １８ 前方光合波器、 ２２ 光増幅器、 ３２,５４,１０６,１５４ モニタ用受光素子、 １０２ 後方光合波器   DESCRIPTION OF SYMBOLS 10 Semiconductor device, 12 Substrate, 14 Semiconductor laser element, 16, 20, 30 Waveguide, 18 Front optical multiplexer, 22 Optical amplifier, 32, 54, 106, 154 Monitor light receiving element, 102 Rear optical multiplexer

Claims (5)

１枚の基板と、
前記基板に設けられた複数の半導体レーザ素子と、
前記基板に設けられた、前記複数の半導体レーザ素子の前方出力光を合波する前方光合波器と、
前記基板に設けられた、前記前方光合波器で合波された光を増幅する光増幅器と、
前記基板に設けられた、前記複数の半導体レーザ素子の後方出力光を受光するモニタ用受光素子と、を備えたことを特徴とする半導体装置。 One board,
A plurality of semiconductor laser elements provided on the substrate;
A forward optical multiplexer provided on the substrate for multiplexing forward output light of the plurality of semiconductor laser elements;
An optical amplifier for amplifying the light combined by the front optical multiplexer provided on the substrate;
A semiconductor device comprising: a monitor light-receiving element that is provided on the substrate and receives backward output light of the plurality of semiconductor laser elements. 前記モニタ用受光素子は前記複数の半導体レーザ素子と同数設けられ、
複数の前記モニタ用受光素子は、前記複数の半導体レーザ素子の後方出力光を個別に受光することを特徴とする請求項１に記載の半導体装置。 The monitoring light receiving elements are provided in the same number as the plurality of semiconductor laser elements,
2. The semiconductor device according to claim 1, wherein the plurality of monitoring light receiving elements individually receive rear output light of the plurality of semiconductor laser elements. 前記モニタ用受光素子は、前記複数の半導体レーザ素子の後方出力光をまとめて受光する１つの素子であることを特徴とする請求項１に記載の半導体装置。   The semiconductor device according to claim 1, wherein the light receiving element for monitoring is a single element that collectively receives the rear output light of the plurality of semiconductor laser elements. 前記基板に設けられた、前記複数の半導体レーザ素子の後方出力光を合波する後方光合波器を備え、
前記モニタ用受光素子は前記後方光合波器で合波された光を受光することを特徴とする請求項１に記載の半導体装置。 A rear optical multiplexer provided on the substrate for multiplexing the rear output light of the plurality of semiconductor laser elements;
The semiconductor device according to claim 1, wherein the light receiving element for monitoring receives light combined by the rear optical multiplexer. １枚の基板と、
前記基板に設けられた複数の半導体レーザ素子と、
前記基板に設けられた、前記複数の半導体レーザ素子の前方出力光を合波する前方光合波器と、
前記基板に設けられた、モニタ用受光素子と、
前記基板に設けられた、光増幅器と、を備え、
前記前方光合波器で合波された光のうち、一部は前記モニタ用受光素子で受光され、残りの光は前記光増幅器で増幅されることを特徴とする半導体装置。 One board,
A plurality of semiconductor laser elements provided on the substrate;
A forward optical multiplexer provided on the substrate for multiplexing forward output light of the plurality of semiconductor laser elements;
A light receiving element for monitoring provided on the substrate;
An optical amplifier provided on the substrate;
A part of the light combined by the front optical multiplexer is received by the light receiving element for monitoring, and the remaining light is amplified by the optical amplifier.
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Cited By (2)

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JP6437172B1 (en) * 2018-04-02 2018-12-12 三菱電機株式会社 Laser equipment
WO2020240645A1 (en) * 2019-05-27 2020-12-03 三菱電機株式会社 Optical semiconductor device

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