JP2015172242A - 原子層堆積窒化ケイ素膜のインシトゥ炭素及び酸化物ドーピング - Google Patents
原子層堆積窒化ケイ素膜のインシトゥ炭素及び酸化物ドーピング Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 title claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims 4
- 238000000231 atomic layer deposition Methods 0.000 title description 4
- 238000011065 in-situ storage Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 90
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 38
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- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000001301 oxygen Substances 0.000 claims abstract description 20
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 16
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 7
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 6
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 6
- ABDDAHLAEXNYRC-UHFFFAOYSA-N trichloro(trichlorosilylmethyl)silane Chemical compound Cl[Si](Cl)(Cl)C[Si](Cl)(Cl)Cl ABDDAHLAEXNYRC-UHFFFAOYSA-N 0.000 claims description 6
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims description 5
- 238000004886 process control Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 abstract 1
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- 238000009826 distribution Methods 0.000 description 19
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 14
- 238000010926 purge Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
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- 229910001868 water Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
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- 229910052786 argon Inorganic materials 0.000 description 5
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
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- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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Abstract
Description
60 基板
61 表面
65 シャトル
70 トラック
90 ヒータ
100 処理チャンバ
102 電極
104 電極
106 プラズマ領域
120 前駆体注入器
125 ガスポート
130 前駆体注入器
135 ガスポート
140 前駆体注入器
142 前駆体注入器
144 プラズマ源注入器
145 パージガスポート
150 ポンピングシステム
155 真空ポート
160 パーティション
165 ガスポート
175 ガスポート
181 電極
185 プラズマ領域
189 電極
200 処理チャンバ
230 サセプタアセンブリ
231 上面
240 支持軸
243 凹部
250 ガス/プラズマ分配アセンブリ
252 セグメント
301 表面
302 ガスポート
304 パージガスポート
306 真空ポート
Claims (15)
- 誘電体膜を形成するための方法であって、
複数の基板を処理チャンバ内部に置くこと、
基板を、ケイ素を含む第1の反応性ガスに曝露し、次いで、基板を、窒素及び少なくとも酸素又は炭素を含む第2の反応性ガスのプラズマに曝露するという曝露シーケンスを実施すること、及び
曝露シーケンスを繰り返して各基板上に窒化炭化ケイ素又は酸窒化炭化ケイ素を含む誘電体膜を形成すること
を含む、方法。 - 第1の反応性ガスは、ビス(トリクロロシリル)メタン、ヘキサクロロジシラン、又はジクロロシランを含む、請求項1に記載の方法。
- 第2の反応性ガスは、アンモニア及び二酸化炭素を含む、請求項2に記載の方法。
- 複数の基板のうちのいくつかの基板は、サセプタアセンブリ上に配置される、請求項1に記載の方法。
- 第1の反応性ガスは、炭素をさらに含む、請求項1に記載の方法。
- 複数の基板のうちのいくつかの基板は、前記第1の反応性ガス又は前記プラズマに曝露されると回転する、請求項1に記載の方法。
- 誘電体膜を形成するための方法であって、
複数の基板を処理チャンバ内部に置くこと、
基板を、ケイ素を含む第1の反応性ガスに曝露し、次いで、基板を、窒素及び少なくとも酸素又は炭素を含む第2の反応性ガスのプラズマに曝露するという曝露シーケンスを実施すること、及び
曝露シーケンスを繰り返して各基板上に窒化炭化ケイ素又は酸窒化炭化ケイ素を含む誘電体膜を形成すること
を含む、方法。 - 第1の反応性ガスは、ビス(トリクロロシリル)メタン、ヘキサクロロジシラン、又はジクロロシランを含む、請求項7に記載の方法。
- 第2の反応性ガスは、アンモニア及び二酸化炭素を含む、請求項8に記載の方法。
- 複数の基板は、サセプタアセンブリ上に配置される、請求項7に記載の方法。
- 第1の反応性ガスは、炭素をさらに含む、請求項7に記載の方法。
- 複数の基板のうちのいくつかの基板は、前記第1の反応性ガス又は前記第2の反応性ガスに曝露されると回転する、請求項7に記載の方法。
- 誘電体膜を形成するための方法であって、
複数の基板を処理チャンバ内部に置くこと、
基板を、ケイ素を含む第1の反応性ガスに曝露し、次いで、基板を、窒素を含む第2の反応性ガスに曝露し、次いで、基板を酸素又は不活性ガスを含むガスのプラズマに曝露するという曝露シーケンスを実施すること、
曝露シーケンスを繰り返して各基板上に窒化炭化ケイ素又は酸窒化炭化ケイ素を含む誘電体膜を形成すること
を含む、方法。 - 複数の基板は、サセプタアセンブリ上に配置される、請求項13に記載の方法。
- サセプタアセンブリは、複数の基板を支持するための複数の凹部を含む、請求項14に記載の方法。
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JP2022008961A (ja) * | 2018-08-29 | 2022-01-14 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | ケイ素及び窒素を含有する膜を製造する方法 |
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KR102420015B1 (ko) * | 2015-08-28 | 2022-07-12 | 삼성전자주식회사 | Cs-ald 장치의 샤워헤드 |
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US11158500B2 (en) | 2017-05-05 | 2021-10-26 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of oxygen containing thin films |
KR102684628B1 (ko) | 2017-05-16 | 2024-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 유전체 상에 옥사이드의 선택적 peald |
US10510852B2 (en) * | 2017-11-28 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low-k feature formation processes and structures formed thereby |
US10991573B2 (en) | 2017-12-04 | 2021-04-27 | Asm Ip Holding B.V. | Uniform deposition of SiOC on dielectric and metal surfaces |
KR20200021834A (ko) * | 2018-08-21 | 2020-03-02 | 주성엔지니어링(주) | 박막 형성 장치 및 이를 이용한 박막 형성 방법 |
US20210225634A1 (en) * | 2020-01-17 | 2021-07-22 | Asm Ip Holding B.V. | FORMATION OF SiCN THIN FILMS |
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