JP2015133445A - Amplification device, vibration isolation device, lithography device, and manufacturing method of articles - Google Patents

Amplification device, vibration isolation device, lithography device, and manufacturing method of articles Download PDF

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JP2015133445A
JP2015133445A JP2014005069A JP2014005069A JP2015133445A JP 2015133445 A JP2015133445 A JP 2015133445A JP 2014005069 A JP2014005069 A JP 2014005069A JP 2014005069 A JP2014005069 A JP 2014005069A JP 2015133445 A JP2015133445 A JP 2015133445A
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amplifier
current
vibration
input signal
detector
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健郎 加藤
Takeo Kato
健郎 加藤
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Canon Inc
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709Vibration, e.g. vibration detection, compensation, suppression or isolation
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/153Feedback used to stabilise the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/393A measuring circuit being coupled to the output of an amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/462Indexing scheme relating to amplifiers the current being sensed

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  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
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  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an amplification device advantageous in suppressing an influence of a temperature variation inside a main body.SOLUTION: An amplification device 17 outputs an output signal according to an input signal through an amplifier 19 and includes a detector 21 that is installed separate from a main body 17a including the amplifier 19, detects the output signal output from the main body 17a, and feeds back to the input signal.

Description

本発明は、増幅装置、除振装置、リソグラフィ装置、および物品の製造方法に関する。   The present invention relates to an amplification device, a vibration isolation device, a lithography apparatus, and an article manufacturing method.

リソグラフィ装置は、半導体デバイスや液晶表示デバイスなどの物品の製造工程に含まれるリソグラフィ工程において、描画や露光などの方法で基板上にパターンを形成する。特にリソグラフィ装置としての電子線描画装置や半導体露光装置では、描画部や露光部などパターン形成処理に直接的に関わる処理部に外部から振動が加わることは、形成精度に影響を及ぼす可能性があるため望ましくない。例えば、半導体露光装置では、基板を保持するステージ装置の位置を計測する干渉計や露光光を生成する鏡筒が設置される鏡筒定盤に床振動が伝わると、重ね合わせ精度を劣化させる可能性がある。そこで、一般的には、リソグラフィ装置は、エアアクチュエータなどを用いた除振装置を備え、鏡筒定盤を数Hzの低固有振動数で支持することで床振動の伝達を抑制し、それと同時に位置決め制御を行う。特許文献1は、この位置決め制御のために除振装置に供給される電流値を、電流アンプ(増幅装置)を介して出力する位置決め装置を開示している。電流アンプは、除振装置に供給される電流値を検出して電流指令値にフィードバックする電流制御を行う。   A lithographic apparatus forms a pattern on a substrate by a method such as drawing or exposure in a lithography process included in a manufacturing process of an article such as a semiconductor device or a liquid crystal display device. In particular, in an electron beam lithography apparatus or a semiconductor exposure apparatus as a lithography apparatus, external vibration applied to a processing unit directly related to pattern formation processing, such as a drawing unit or an exposure unit, may affect formation accuracy. Therefore, it is not desirable. For example, in a semiconductor exposure apparatus, if floor vibrations are transmitted to an interferometer that measures the position of a stage apparatus that holds a substrate and a lens barrel that is used to generate exposure light, the overlay accuracy can be degraded. There is sex. Therefore, in general, a lithographic apparatus includes a vibration isolation device using an air actuator or the like, and suppresses floor vibration transmission by supporting the lens barrel surface plate with a low natural frequency of several Hz, and at the same time. Perform positioning control. Patent Document 1 discloses a positioning device that outputs a current value supplied to a vibration isolation device for positioning control via a current amplifier (amplifying device). The current amplifier performs current control for detecting a current value supplied to the vibration isolator and feeding back to the current command value.

特開平8−111998号公報Japanese Patent Laid-Open No. 8-1111998

ここで、特許文献1に示すような電流アンプでは、本体内部の回路からの発熱に起因してその内部で温度が変動し、電流アンプを構成する部品の特性が変化することで、電流値にも変動が生じる場合がある。以下、この温度変動に起因した電流値の変動を「ドリフト」という。特に、電流アンプ内の電流検出部で生じるドリフトは、電流アンプ本体内のフィードバックで抑制することができずに電流アンプの出力に誤差として含まれてしまう。これは、従来であれば無視できるレベルの小さな量であった。しかしながら、近年、リソグラフィ装置においては、重ね合わせ精度の要求がより厳しくなるなどの精度面から、1Hz以下のさらに低い固有振動数での除振が求められている。これに対して、固有振動数を低くすると、位置決めの制御ゲインを小さく設定する必要があるため、ドリフトにより生じる力を抑制しきれなくなり、結果的に鏡筒定盤の振動振幅が大きくなる。例えば、鏡筒を鏡筒定盤で保持する構成のリソグラフィ装置では、鏡筒と基板との衝突を避けるために鏡筒定盤の可動域を制限するストッパーが設置されているが、鏡筒定盤の振動振幅が大きくなることで、鏡筒定盤とストッパーとが衝突する可能性がある。   Here, in the current amplifier as shown in Patent Document 1, the temperature fluctuates inside due to heat generation from the circuit inside the main body, and the characteristics of the parts constituting the current amplifier change, so that the current value is changed. May also vary. Hereinafter, the fluctuation of the current value caused by the temperature fluctuation is referred to as “drift”. In particular, the drift that occurs in the current detection unit in the current amplifier cannot be suppressed by the feedback in the current amplifier body, and is included as an error in the output of the current amplifier. This was a small amount that could be ignored in the past. However, in recent years, in a lithography apparatus, vibration isolation at a lower natural frequency of 1 Hz or less has been demanded from the viewpoint of accuracy such that requirements for overlay accuracy become more severe. On the other hand, when the natural frequency is lowered, it is necessary to set the positioning control gain to be small, so that the force generated by the drift cannot be suppressed, and as a result, the vibration amplitude of the lens barrel surface plate increases. For example, in a lithography apparatus configured to hold a lens barrel with a lens barrel surface plate, a stopper that limits the movable range of the lens barrel surface plate is installed in order to avoid collision between the lens barrel and the substrate. There is a possibility that the lens barrel surface plate and the stopper collide with each other because the vibration amplitude of the panel becomes large.

本発明は、このような状況に鑑みてなされたものであり、例えば、本体内部での温度変動の影響を抑えるのに有利な増幅装置を提供することを目的とする。   The present invention has been made in view of such a situation, and an object of the present invention is to provide an amplifying apparatus that is advantageous in suppressing the influence of temperature fluctuations inside the main body, for example.

上記課題を解決するために、本発明は、入力信号に応じた出力信号を増幅器を介して出力する増幅装置であって、増幅器を含む本体とは別に設置され、該本体から出力された出力信号を検出して、入力信号にフィードバックする検出器を有することを特徴とする。   In order to solve the above problems, the present invention is an amplifying apparatus that outputs an output signal corresponding to an input signal via an amplifier, and is installed separately from a main body including the amplifier, and the output signal output from the main body And a detector for feeding back to the input signal.

本発明によれば、例えば、本体内部での温度変動の影響を抑えるのに有利な増幅装置を提供することができる。   According to the present invention, for example, it is possible to provide an amplifying apparatus that is advantageous in suppressing the influence of temperature fluctuations inside the main body.

本発明の一実施形態に係る電子線描画装置の構成を示す図である。It is a figure which shows the structure of the electron beam drawing apparatus which concerns on one Embodiment of this invention. 一実施形態における除振装置の構成を示すブロック図である。It is a block diagram which shows the structure of the vibration isolator in one Embodiment. 他の実施形態における除振装置の構成を示すブロック図である。It is a block diagram which shows the structure of the vibration isolator in other embodiment.

以下、本発明を実施するための形態について図面などを参照して説明する。   Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

まず、本発明の一実施形態に係る増幅装置について説明する。本実施形態に係る増幅装置は、例えば、エアアクチュエータなどの駆動部を用いて対象物への振動源からの振動の伝達を抑える除振装置に適用され得る。また、この除振装置は、例えば、電子線描画装置や半導体露光装置などのリソグラフィ装置に採用され得る。そこで、本実施形態では、一例として、増幅装置が電子線描画装置に採用されるものとして説明する。   First, an amplifying apparatus according to an embodiment of the present invention will be described. The amplification device according to the present embodiment can be applied to a vibration isolation device that suppresses transmission of vibration from a vibration source to an object using a drive unit such as an air actuator, for example. Further, this vibration isolation device can be employed in a lithography apparatus such as an electron beam drawing apparatus or a semiconductor exposure apparatus. Therefore, in the present embodiment, as an example, an explanation will be given assuming that the amplification device is employed in an electron beam drawing apparatus.

図1は、本実施形態に係る電子線描画装置(以下、単に「描画装置」という。)1の構成を示す概略図である。描画装置1は、荷電粒子線を偏向させ、かつ、荷電粒子線のブランキング(照射のOFF)を制御することで、所定のパターンを基板4上の所定の位置に描画する。ここで、荷電粒子線は、例えば、電子線やイオン線などをいうが、本実施形態では電子線であるものとして説明する。また、基板4は、例えば、単結晶シリコンからなるウエハであり、表面上には感光性のレジストが塗布されている。なお、図1では、基板4に対する電子線のノミナルの照射方向にZ軸を取り、Z軸に垂直な平面内に互いに直交するX軸およびY軸を取っている。   FIG. 1 is a schematic diagram showing a configuration of an electron beam drawing apparatus (hereinafter simply referred to as “drawing apparatus”) 1 according to the present embodiment. The drawing apparatus 1 draws a predetermined pattern at a predetermined position on the substrate 4 by deflecting the charged particle beam and controlling blanking of the charged particle beam (irradiation OFF). Here, the charged particle beam refers to, for example, an electron beam, an ion beam, or the like. In the present embodiment, the charged particle beam will be described as an electron beam. The substrate 4 is, for example, a wafer made of single crystal silicon, and a photosensitive resist is applied on the surface. In FIG. 1, the Z axis is taken in the direction of nominal electron beam irradiation on the substrate 4, and the X axis and Y axis are taken in a plane perpendicular to the Z axis.

描画装置1は、描画を行う処理部としての電子光学鏡筒3と、基板4が載置されるステージ5と、電子光学鏡筒3を保持する鏡筒定盤6と、鏡筒定盤6を除振装置30を介して支持する支持部12と、制御部40とを備える。電子光学鏡筒3は、その内部に、電子銃7と、不図示の偏向系および光学系とを含む。偏向系および光学系は、電子銃7から下流側にあるステージ5上の基板4に向けて照射される電子線8を制御(ブランキング制御)する。なお、電子光学鏡筒3の内部は、不図示の真空排気系により高真空に維持されている。ステージ5は、例えば静電吸着により基板4を保持しつつ、X、Y軸方向に移動可能である。また、ステージ5は、その側面端に反射ミラー9を設置している。そして、鏡筒定盤6は、干渉計用の支柱10を設置し、支柱10は、その先端に干渉計11を設置している。干渉計11は、反射ミラー9にレーザー光を照射し、反射光を受光することで、ステージ5のX、Y軸方向の位置を検出する。なお、電子光学鏡筒3、ステージ5、および鏡筒定盤6は、不図示の真空排気系により真空に維持された真空チャンバ2の内部に設置されている。制御部40は、電子光学鏡筒3内の各構成要素、ステージ5、および除振装置30などの動作を制御する。描画時の基本動作として、制御部40は、ステージ5をステップ・アンド・リピート動作またはスキャン動作により移動させながら、照射中の電子線を適宜偏向させることで、基板4上のショット(描画領域)にパターンを描画する。   The drawing apparatus 1 includes an electron optical column 3 as a processing unit that performs drawing, a stage 5 on which a substrate 4 is placed, a column base plate 6 that holds the electron optical column 3, and a column base plate 6 Is provided with a support unit 12 that supports the vibration isolation device 30 via a vibration isolation device 30 and a control unit 40. The electron optical column 3 includes therein an electron gun 7 and a deflection system and an optical system (not shown). The deflection system and the optical system control (blanking control) the electron beam 8 irradiated toward the substrate 4 on the stage 5 on the downstream side from the electron gun 7. The inside of the electron optical column 3 is maintained at a high vacuum by a vacuum exhaust system (not shown). The stage 5 is movable in the X and Y axis directions while holding the substrate 4 by, for example, electrostatic adsorption. The stage 5 is provided with a reflection mirror 9 at the side surface end. The lens barrel surface plate 6 is provided with an interferometer column 10, and the column 10 is provided with an interferometer 11 at the tip thereof. The interferometer 11 detects the position of the stage 5 in the X and Y axis directions by irradiating the reflection mirror 9 with laser light and receiving the reflected light. The electron optical column 3, the stage 5, and the lens barrel surface plate 6 are installed inside a vacuum chamber 2 that is maintained in a vacuum by a vacuum exhaust system (not shown). The control unit 40 controls the operation of each component in the electron optical column 3, the stage 5, the vibration isolation device 30, and the like. As a basic operation at the time of drawing, the control unit 40 appropriately deflects the electron beam being irradiated while moving the stage 5 by a step-and-repeat operation or a scanning operation, thereby making a shot (drawing region) on the substrate 4. Draw a pattern on

次に、除振装置30と、除振装置30に含まれる増幅装置について詳説する。図2は、除振装置30の構成を示すブロック図であり、図1に示す構成要素と同一のものには同一の符号を付す。除振装置30は、例えば、床振動が、対象物としての鏡筒定盤6へ伝達するのを抑えるために設置されるものであり、駆動部13と、検出部14と、電流指令生成部15と、増幅装置17とを含む。駆動部13は、例えばエアアクチュエータであり、鏡筒定盤6と複数の支持部12との間の少なくとも3箇所に設置され、鏡筒定盤6を、床面または不図示の定盤上に低固有振動数で支持するとともに位置決めする。ここでは、説明の簡単化のために、複数の駆動部13のうちの1つに対して位置決め制御を行うものとする。検出部14は、例えば変位センサであり、複数の支持部12においてそれぞれの駆動部13の近傍に設置され、それぞれ、鏡筒定盤6と支持部12との相対変位を検出する。電流指令生成部15は、例えば制御部40内に構成されるものであり、検出部14で検出された相対変位と、駆動部13への位置指令との偏差を位置制御器16に入力し、駆動部13に対する電流指令値を生成する。   Next, the vibration isolation device 30 and the amplification device included in the vibration isolation device 30 will be described in detail. FIG. 2 is a block diagram showing the configuration of the vibration isolator 30. The same components as those shown in FIG. The vibration isolator 30 is installed, for example, to suppress floor vibrations from being transmitted to the lens barrel surface plate 6 as an object, and includes a drive unit 13, a detection unit 14, and a current command generation unit. 15 and an amplifying device 17. The drive unit 13 is, for example, an air actuator, and is installed at at least three locations between the lens barrel surface plate 6 and the plurality of support units 12, and the lens barrel surface plate 6 is placed on the floor surface or a surface plate (not shown). Support and position at low natural frequency. Here, for simplification of description, it is assumed that positioning control is performed on one of the plurality of driving units 13. The detection unit 14 is, for example, a displacement sensor, and is installed in the vicinity of each drive unit 13 in the plurality of support units 12, and detects relative displacement between the lens barrel surface plate 6 and the support unit 12, respectively. The current command generation unit 15 is configured in the control unit 40, for example, and inputs a deviation between the relative displacement detected by the detection unit 14 and the position command to the drive unit 13 to the position controller 16, A current command value for the drive unit 13 is generated.

増幅装置17は、いわゆる電流アンプであり、電流指令値(入力信号)を増幅し、駆動部13へ電流値(出力信号)を出力する。駆動部13は、駆動信号としての電流値に基づいて制御力を作用させて、鏡筒定盤6に変位を与える。増幅装置17は、電流制御器18と、増幅器19と、第1電流検出器20とを含む本体17a、および第2電流検出器21を含む。まず、第1電流検出器(内部検出器)20は、駆動部13への電流値を検出し、検出した電流値を電流指令値にフィードバックする。次に、電流制御器18は、増幅器19への入力信号を演算する。そして、増幅器19は、増幅した電流値を出力する。第2電流検出器(検出器)21は、第1電流検出器とは異なり、増幅装置17の外側に、すなわち増幅装置17とは別体で設けられ、増幅装置17から出力された電流値を検出する。この場合、制御部40は、電流指令生成部15からの電流指令値と、第2電流検出器21からの電流値に増幅装置17の逆特性1/Gを乗じた信号との偏差を演算する。ここで、増幅装置17の逆特性1/Gを乗じるのは、電流値を電流指令値の次元に換算するためである。そして、得られた偏差信号は、電流指令値にフィードバックされ、増幅装置17に入力される。   The amplifying device 17 is a so-called current amplifier, amplifies a current command value (input signal), and outputs a current value (output signal) to the drive unit 13. The drive unit 13 applies a control force based on a current value as a drive signal to give displacement to the lens barrel surface plate 6. The amplifying device 17 includes a main body 17 a including a current controller 18, an amplifier 19, and a first current detector 20, and a second current detector 21. First, the first current detector (internal detector) 20 detects a current value to the drive unit 13 and feeds back the detected current value to a current command value. Next, the current controller 18 calculates an input signal to the amplifier 19. The amplifier 19 outputs the amplified current value. Unlike the first current detector, the second current detector (detector) 21 is provided outside the amplifying device 17, that is, separately from the amplifying device 17, and the current value output from the amplifying device 17 is obtained. To detect. In this case, the control unit 40 calculates a deviation between the current command value from the current command generation unit 15 and the signal obtained by multiplying the current value from the second current detector 21 by the inverse characteristic 1 / G of the amplification device 17. . Here, the reason why the inverse characteristic 1 / G of the amplification device 17 is multiplied is to convert the current value into the dimension of the current command value. The obtained deviation signal is fed back to the current command value and input to the amplifying device 17.

増幅装置17の本体17aに基本構成が対応する従来の増幅装置では、その内部で図2に示すようにドリフト(内部の温度変動に起因した電流値の変動)が生じると、増幅器19からの出力信号を検出する第1電流検出器20の出力値に影響を及ぼし得る。これは、出力信号の振幅の増大など意図しない結果を招き得る。これに対して、本実施形態では、第1電流検出器20とは別に、同様に増幅器19から(この場合本体17aから)の出力信号を検出する第2電流検出器21を、本体17aの外側に設けている。これにより、本体17aの内部でドリフトが生じたとしても、第2電流検出器21は、その影響を受けることがないので、上記のような意図しない結果を抑制できる。   In the conventional amplifying device whose basic configuration corresponds to the main body 17a of the amplifying device 17, when a drift (a fluctuation in current value due to an internal temperature fluctuation) occurs in the inside as shown in FIG. This may affect the output value of the first current detector 20 that detects the signal. This can lead to unintended consequences such as an increase in the amplitude of the output signal. On the other hand, in the present embodiment, apart from the first current detector 20, the second current detector 21 that similarly detects the output signal from the amplifier 19 (in this case, from the main body 17a) is provided outside the main body 17a. Provided. As a result, even if a drift occurs inside the main body 17a, the second current detector 21 is not affected by this, and thus the above unintended result can be suppressed.

以上のように、本実施形態によれば、本体内部での温度変動の影響を抑えるのに有利な増幅装置を提供することができる。また、本実施形態に係る増幅装置を用いることで、位置制御の精度面で有利な除振装置を提供することができる。さらに、本実施形態に係る除振装置を用いることで、パターン形成の精度面で有利なリソグラフィ装置を提供することができる。   As described above, according to the present embodiment, it is possible to provide an amplifying apparatus that is advantageous in suppressing the influence of temperature fluctuations inside the main body. Further, by using the amplification device according to the present embodiment, it is possible to provide a vibration isolation device that is advantageous in terms of accuracy of position control. Furthermore, by using the vibration isolation device according to the present embodiment, it is possible to provide a lithography apparatus that is advantageous in terms of pattern formation accuracy.

なお、上記説明では、増幅装置17が電流アンプである場合について例示したが、本発明は、これに限らず、例えば電圧アンプであっても同様に実施可能である。この場合、上記説明でいう電流指令値が電圧指令値となり、電流値が電圧値となる。   In the above description, the case where the amplifying device 17 is a current amplifier has been exemplified. However, the present invention is not limited to this, and the present invention can be similarly implemented even with a voltage amplifier. In this case, the current command value in the above description becomes the voltage command value, and the current value becomes the voltage value.

また、上記説明では、電流指令生成部15からの電流指令値と、第2電流検出器21からの電流値に増幅装置17の逆特性1/Gを乗じた信号との偏差を演算する処理を制御部40で実行するものとした。しかしながら、本発明は、これに限定されず、例えば、図3に示すように、この演算処理を増幅装置17の本体17aの内部で実行するものとしてもよい。この場合、本体17aに端子22を設け、第2電流検出器21で検出した電流値を端子22を介して内部に入力する。さらに、第2電流検出器21からの電流値を電流指令値の次元に換算するために増幅装置17の逆特性1/Gを乗じるものとしているが、この換算機能を第2電流検出器21自体に持たせるものとしても構わない。   In the above description, the process of calculating the deviation between the current command value from the current command generator 15 and the signal obtained by multiplying the current value from the second current detector 21 by the inverse characteristic 1 / G of the amplifying device 17 is performed. It is assumed that it is executed by the control unit 40. However, the present invention is not limited to this. For example, as shown in FIG. 3, this arithmetic processing may be executed inside the main body 17 a of the amplification device 17. In this case, the terminal 22 is provided in the main body 17 a and the current value detected by the second current detector 21 is input to the inside through the terminal 22. Furthermore, in order to convert the current value from the second current detector 21 into the dimension of the current command value, the inverse characteristic 1 / G of the amplifying device 17 is multiplied. This conversion function is used for the second current detector 21 itself. It does not matter if it is given to

(物品の製造方法)
一実施形態に係る物品の製造方法は、例えば、半導体デバイスなどのマイクロデバイスや微細構造を有する素子などの物品を製造するのに好適である。当該製造方法は、物体(例えば、感光剤を表面に有する基板)上に上記のリソグラフィ装置を用いてパターン(例えば潜像パターン)を形成する工程と、該工程でパターンを形成された物体を処理する工程(例えば、現像工程)とを含み得る。さらに、該製造方法は、他の周知の工程(酸化、成膜、蒸着、ドーピング、平坦化、エッチング、レジスト剥離、ダイシング、ボンディング、パッケージングなど)を含み得る。本実施形態の物品の製造方法は、従来の方法に比べて、物品の性能・品質・生産性・生産コストの少なくとも1つにおいて有利である。
(Product manufacturing method)
The method for manufacturing an article according to an embodiment is suitable for manufacturing an article such as a micro device such as a semiconductor device or an element having a fine structure. The manufacturing method includes a step of forming a pattern (for example, a latent image pattern) on an object (for example, a substrate having a photosensitive agent on the surface) by using the above-described lithography apparatus, and a processing of the object on which the pattern is formed in the step. (For example, a development step). Further, the manufacturing method may include other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, and the like). The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

以上、本発明の好ましい実施形態について説明したが、本発明は、これらの実施形態に限定されず、その要旨の範囲内で種々の変形または変更が可能である。   As mentioned above, although preferable embodiment of this invention was described, this invention is not limited to these embodiment, A various deformation | transformation or change is possible within the range of the summary.

17 増幅装置
17a 本体
19 増幅器
21 第2電流検出器
17 amplifying device 17a body 19 amplifier 21 second current detector

Claims (8)

入力信号に応じた出力信号を増幅器を介して出力する増幅装置であって、
前記増幅器を含む本体とは別に設置され、該本体から出力された前記出力信号を検出して、前記入力信号にフィードバックする検出器を有することを特徴とする増幅装置。
An amplification device that outputs an output signal corresponding to an input signal through an amplifier,
An amplifying apparatus, which is provided separately from a main body including the amplifier, and has a detector that detects the output signal output from the main body and feeds back to the input signal.
前記本体の内部に、前記増幅器から出力された前記出力信号を検出する内部検出器を有し、
前記検出器は、前記内部検出器とは異なる、
ことを特徴とする請求項1に記載の増幅装置。
An internal detector for detecting the output signal output from the amplifier in the body;
The detector is different from the internal detector;
The amplifying apparatus according to claim 1.
前記検出器で検出された出力信号は、前記入力信号との偏差が取られ、
前記偏差は、前記入力信号にフィードバックされる、
ことを特徴とする請求項1または2に記載の増幅装置。
The output signal detected by the detector is deviated from the input signal,
The deviation is fed back to the input signal.
The amplifying apparatus according to claim 1 or 2, wherein
前記入力信号を電流指令値とし、前記出力信号を電流値とする電流アンプであることを特徴とする請求項1ないし3のいずれか1項に記載の増幅装置。   The amplifying apparatus according to claim 1, wherein the amplifier is a current amplifier having the input signal as a current command value and the output signal as a current value. 前記入力信号を電圧指令値とし、前記出力信号を電圧値とする電圧アンプであることを特徴とする請求項1ないし3のいずれか1項に記載の増幅装置。   The amplifying apparatus according to claim 1, wherein the amplifier is a voltage amplifier having the input signal as a voltage command value and the output signal as a voltage value. 振動源からの振動が対象物へ伝達するのを抑える除振装置であって、
前記振動源と前記対象物との間に設置され、変位を与える駆動部と、
前記駆動部に対して駆動信号を出力する増幅装置と、を備え、
前記増幅装置は、請求項1ないし5のいずれか1項に記載の増幅装置である、
ことを特徴とする除振装置。
A vibration isolator that suppresses transmission of vibration from a vibration source to an object,
A drive unit that is installed between the vibration source and the object and applies displacement;
An amplification device that outputs a drive signal to the drive unit,
The amplification device is the amplification device according to any one of claims 1 to 5.
A vibration isolator characterized by that.
基板にパターンを形成するリソグラフィ装置であって、
前記対象物を前記パターンを形成する処理を行う処理部として、該処理部へ振動が伝達するのを抑える請求項6に記載の除振装置を備えることを特徴とするリソグラフィ装置。
A lithographic apparatus for forming a pattern on a substrate,
The lithographic apparatus according to claim 6, further comprising: a vibration isolation device according to claim 6, wherein a vibration is transmitted to the processing unit as a processing unit that performs processing for forming the pattern on the object.
請求項7に記載のリソグラフィ装置を用いてパターンを基板に形成する工程と、
前記工程で前記パターンを形成された基板を処理する工程と、
を含むことを特徴とする物品の製造方法。
Forming a pattern on a substrate using the lithography apparatus according to claim 7;
Processing the substrate on which the pattern is formed in the step;
A method for producing an article comprising:
JP2014005069A 2014-01-15 2014-01-15 Amplification device, vibration isolation device, lithography device, and manufacturing method of articles Pending JP2015133445A (en)

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