JP2015109296A5 - - Google Patents

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JP2015109296A5
JP2015109296A5 JP2013250059A JP2013250059A JP2015109296A5 JP 2015109296 A5 JP2015109296 A5 JP 2015109296A5 JP 2013250059 A JP2013250059 A JP 2013250059A JP 2013250059 A JP2013250059 A JP 2013250059A JP 2015109296 A5 JP2015109296 A5 JP 2015109296A5
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Prior art keywords
insulating resin
flexible device
fluororesin
resin substrate
substrate
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JP2013250059A
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Japanese (ja)
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JP6355322B2 (en
JP2015109296A (en
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Priority to JP2013250059A priority Critical patent/JP6355322B2/en
Priority claimed from JP2013250059A external-priority patent/JP6355322B2/en
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Publication of JP2015109296A5 publication Critical patent/JP2015109296A5/ja
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Publication of JP6355322B2 publication Critical patent/JP6355322B2/en
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Claims (7)

支持基板上に熱可塑性フッ素樹脂を塗布成膜した後、該フッ素樹脂膜の表面エネルギーを大きくする物理的表面処理を行う第１工程と、
該フッ素樹脂膜の上に絶縁性樹脂を成膜し、前記フッ素樹脂のガラス転移温度以上で加熱し、フッ素樹脂層及び絶縁性樹脂基板を形成する第２工程と、
前記絶縁性樹脂基板上に薄膜トランジスタの集積回路を形成した後、前記支持基板から該絶縁性樹脂基板を剥離する又は他の基板に移し取る第３工程
とを備えていることを特徴とするフレキシブルデバイスの製造方法。 A first step of applying a physical surface treatment to increase the surface energy of the fluororesin film after coating and forming a thermoplastic fluororesin on the support substrate;
A second step of forming an insulating resin on the fluororesin film and heating at a glass transition temperature or higher of the fluororesin to form a fluororesin layer and an insulating resin substrate;
A flexible device comprising: a third step of forming an integrated circuit of a thin film transistor on the insulating resin substrate, and then peeling the insulating resin substrate from the supporting substrate or transferring it to another substrate. Manufacturing method. 前記物理的表面処理が、酸素プラズマ処理、窒素プラズマ処理、アルゴンプラズマ処理及び反応性イオンエッチングのうちのいずれかであることを特徴とする請求項１記載のフレキシブルデバイスの製造方法。   2. The method of manufacturing a flexible device according to claim 1, wherein the physical surface treatment is one of oxygen plasma treatment, nitrogen plasma treatment, argon plasma treatment, and reactive ion etching. 前記支持基板から剥離された絶縁性樹脂基板は、前記フッ素樹脂層を含み、前記絶縁性樹脂基板及び前記フッ素樹脂層の総厚さが２００μｍ以下のフレキシブル基板であることを特徴とする請求項１又は２に記載のフレキシブルデバイスの製造方法。   The insulating resin substrate peeled from the support substrate is a flexible substrate including the fluororesin layer, and the total thickness of the insulating resin substrate and the fluororesin layer is 200 μm or less. Or the manufacturing method of the flexible device of 2. 前記熱可塑性フッ素樹脂がサイトップ（登録商標）又はテフロン（登録商標）であることを特徴とする請求項１〜３のいずれか１項に記載のフレキシブルデバイスの製造方法。   The method for manufacturing a flexible device according to any one of claims 1 to 3, wherein the thermoplastic fluororesin is Cytop (registered trademark) or Teflon (registered trademark). 前記絶縁性樹脂がポリイミドであることを特徴とする請求項１〜４のいずれか１項に記載のフレキシブルデバイスの製造方法。   The said insulating resin is a polyimide, The manufacturing method of the flexible device of any one of Claims 1-4 characterized by the above-mentioned. 絶縁性樹脂基板上に、薄膜トランジスタの集積回路が形成されたフレキシブルデバイスであって、A flexible device in which an integrated circuit of a thin film transistor is formed on an insulating resin substrate,
前記絶縁性樹脂基板は、その外面にフッ素樹脂層を含むことを特徴とするフレキシブルデバイス。The insulating resin substrate includes a fluororesin layer on an outer surface thereof, and is a flexible device. 前記フッ素樹脂層を含む絶縁性樹脂基板の総厚さが２００μｍ以下である、請求項６に記載のフレキシブルデバイス。The flexible device according to claim 6, wherein the total thickness of the insulating resin substrate including the fluororesin layer is 200 μm or less.
JP2013250059A 2013-12-03 2013-12-03 Method for manufacturing flexible device Expired - Fee Related JP6355322B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013250059A JP6355322B2 (en) 2013-12-03 2013-12-03 Method for manufacturing flexible device

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Application Number Priority Date Filing Date Title
JP2013250059A JP6355322B2 (en) 2013-12-03 2013-12-03 Method for manufacturing flexible device

Publications (3)

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JP2015109296A JP2015109296A (en) 2015-06-11
JP2015109296A5 true JP2015109296A5 (en) 2017-01-12
JP6355322B2 JP6355322B2 (en) 2018-07-11

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JP2013250059A Expired - Fee Related JP6355322B2 (en) 2013-12-03 2013-12-03 Method for manufacturing flexible device

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Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3435853B2 (en) * 1994-11-11 2003-08-11 旭硝子株式会社 Surface modification method for fluororesin
KR100944886B1 (en) * 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A method of manufacturing a semiconductor device
JP4843963B2 (en) * 2005-03-04 2011-12-21 凸版印刷株式会社 Thin film transistor manufacturing method
JP4579054B2 (en) * 2005-05-31 2010-11-10 大日本印刷株式会社 Thin film transistor mounted panel and method for manufacturing the same
JP2008072087A (en) * 2006-08-16 2008-03-27 Kyoto Univ Semiconductor device and manufacturing method of the semiconductor device, and display device
JP5649772B2 (en) * 2008-04-25 2015-01-07 日本バルカー工業株式会社 Surface modification method for fluororesin-based molding
TWI461119B (en) * 2009-01-20 2014-11-11 Toyoboseki Kabushikikaisha Multilayer fluorine resin film and printed wiring board
TWI419091B (en) * 2009-02-10 2013-12-11 Ind Tech Res Inst Appratus for a transferrable flexible electronic device and method for fabricating a flexible electronic device
JP5152104B2 (en) * 2009-06-08 2013-02-27 東洋紡株式会社 Laminated body and method for producing the same
WO2012046428A1 (en) * 2010-10-08 2012-04-12 シャープ株式会社 Method for producing semiconductor device
JP5862238B2 (en) * 2011-05-27 2016-02-16 東洋紡株式会社 LAMINATE, MANUFACTURING METHOD THEREOF, AND DEVICE STRUCTURE MANUFACTURING METHOD USING THE SAME

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